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1. 发明申请

WO2019101577A1 NEAR-INFRARED PHOTODETECTOR SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：WO2019101577A1
公开(公告)日：2019-05-31
申请号：PCT/EP2018/081086
申请日：2018-11-13
申请人： AMS AG
发明人： JONAK-AUER, Ingrid , MEINHARDT, Gerald , LÖFFLER, Bernhard
IPC分类号： H01L27/146 , H01L31/028
CPC分类号： H01L27/14649 , H01L27/14629 , H01L31/028
摘要： The near-infrared photodetector semiconductor device comprises a semiconductor layer (1) of a first type of conductivity with a main surface (10), a trench or a plurality of trenches (2) in the semiconductor layer at the main surface, a SiGe alloy layer (3) in the trench or the plurality of trenches, and an electrically conductive filling material of a second type of conductivity in the trench or the plurality of trenches, the second type of conductivity being opposite to the first type of conductivity.

2. 发明申请

WO2020254119A1 SEMICONDUCTOR DEVICE FOR INFRARED DETECTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE FOR INFRARED DETECTION AND INFRARED DETECTOR 审中-公开
公开(公告)号：WO2020254119A1
公开(公告)日：2020-12-24
申请号：PCT/EP2020/065454
申请日：2020-06-04
申请人： AMS AG
发明人： MEINHARDT, Gerald , JONAK-AUER, Ingrid , FASCHING, Gernot , LÖFFLER, Bernhard
IPC分类号： H01L31/109 , H01L31/0232 , H01L31/028 , G02B6/12 , G02B6/34 , G02B6/122 , G02B6/10
摘要： A semiconductor device for infrared detection comprises a stack of a first semiconductor layer (1), a second semiconductor layer (2) and an optical coupling layer (3). The first semiconductor layer (1) has a first type of conductivity and the second semiconductor layer (2) has a second type of conductivity. The optical coupling layer (3) comprises an optical coupler (31) and at least a first lateral absorber region (32). The optical coupler (31) is configured to deflect incident light towards the first lateral absorber region (32). The first lateral absorber region (32) comprises an absorber material with a bandgap Eg in the infrared, IR.

3. 发明申请

WO2012156215A2 FOTODIODE UND HERSTELLUNGSVERFAHREN 审中-公开
标题翻译：光电二极管和方法
公开(公告)号：WO2012156215A2
公开(公告)日：2012-11-22
申请号：PCT/EP2012/058296
申请日：2012-05-04
申请人： AMS AG , KRAFT, Jochen , JONAK-AUER, Ingrid , MINIXHOFER, Rainer , TEVA, Jordi , TRUPPE, Herbert
发明人： KRAFT, Jochen , JONAK-AUER, Ingrid , MINIXHOFER, Rainer , TEVA, Jordi , TRUPPE, Herbert
IPC分类号： H01L27/146
CPC分类号： H01L31/035281 , H01L31/02005 , H01L31/103 , H01L31/18 , Y02E10/50
摘要： Die Fotodiode besitzt einen p-leitend dotierten Bereich (2) und einen n-leitend dotierten Bereich (3) in einem Halbleiterkörper (1) sowie einen pn-Übergang (4) zwischen dem p-leitend dotierten Bereich und dem n-leitend dotierten Bereich. Der Halbleiterkörper besitzt eine Aussparung (5), so dass der pn-Übergang (4) einen Abstand (d) von höchstens 30 μm von dem Boden (7) der Aussparung aufweist.
摘要翻译：光电二极管具有p型掺杂区（2）和n型掺杂区（3）在半导体本体（1）和一个pn结（4）的p型掺杂区域和N型掺杂区域之间，半导体本体具有一个凹部（5），以便从底部至多30微米的pn结（4）在距离（d）（7）的所述凹部具有。

4. 发明申请

WO2013068227A1 LATERAL AVALANCHE PHOTODIODE DEVICE AND METHOD OF PRODUCTION 审中-公开
标题翻译：横向AVALANCHE光电设备及其生产方法
公开(公告)号：WO2013068227A1
公开(公告)日：2013-05-16
申请号：PCT/EP2012/070884
申请日：2012-10-22
申请人： AMS AG
发明人： JONAK-AUER, Ingrid , TEVA, Jordi
IPC分类号： H01L31/107 , H01L31/0352 , H01L31/18 , H01L27/146
CPC分类号： H01L31/107 , H01L27/14609 , H01L27/14634 , H01L27/14689 , H01L31/03529 , H01L31/18 , H01L31/1804 , Y02E10/547
摘要： A lateral avalanche photodiode device comprises a semiconductor substrate (1) having a trench (4) with side walls (5) extending from a main surface (2) to a rear surface (3). A first doped region (11) is present at the side walls of the trench, and a second doped region (12) is arranged at a distance from the first doped region. A third doped region (13) is located adjacent to the first doped region, extends through the substrate from the main surface to the rear surface, and is arranged between the first doped region and the second doped region. The third doped region (13) is the avalanche multiplication region of the photodiode structure. The second doped region and the third doped region have a first type of conductivity, and the first doped region has a second type of conductivity which is opposite to the first type of conductivity. The region of the substrate that is between the first doped region and the second doped region is of the first type of conductivity.
摘要翻译：横向雪崩光电二极管装置包括具有沟槽（4）的半导体衬底（1），侧壁（5）从主表面（2）延伸到后表面（3）。第一掺杂区域（11）存在于沟槽的侧壁处，并且第二掺杂区域（12）被布置在离第一掺杂区域一定距离处。第三掺杂区域（13）位于第一掺杂区域附近，从主表面延伸穿过衬底到后表面，并且布置在第一掺杂区域和第二掺杂区域之间。第三掺杂区域（13）是光电二极管结构的雪崩倍增区域。第二掺杂区域和第三掺杂区域具有第一类型的导电性，并且第一掺杂区域具有与第一类型导电性相反的第二类型的导电性。位于第一掺杂区域和第二掺杂区域之间的衬底的区域是第一类型的导电性。

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