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1. 发明公开

EP2154141A2 Precursors for depositing silicon-containing films and methods for making and using same 有权
标题翻译：前体用于沉积含硅薄膜，以及它们的使用方法
公开(公告)号：EP2154141A2
公开(公告)日：2010-02-17
申请号：EP09167403.6
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C07F7/08 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R 1 R 2 N) n SiR 3 4-n (I)

wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.
摘要翻译：氨基硅烷前体用于沉积含硅薄膜，和用于沉积由合成氨基硅烷含硅薄膜的前体的方法被描述。在一个，实施例提供了在氨基硅烷前体用于沉积含硅薄膜，其包括以下式（I）：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ（R 1 R 2 N）N SIR 3 4-正€ƒ€ƒ€ƒ€ƒ€ƒ（I）worin取代基R 1和R 2各自独立地选自于烷基，1至20个碳原子和芳基含有6至30个碳原子，其包括选择，取代基中的至少一个R 1和R 2包括至少一个吸电子选自F，Cl，溴，I，CN，NO 2，PO（OR）2，OR，SO，SO 2选择取代基，SO 2 R和worin 中的R的至少一个吸电子取代基选自烷基或选择在芳基，R 3选自H，以烷基基团，或在芳基，和n是数字从1至4中

2. 发明公开

EP2154141A3 Precursors for depositing silicon-containing films and methods for making and using same 有权
标题翻译：前体用于沉积含硅薄膜，以及它们的制备方法和用途
公开(公告)号：EP2154141A3
公开(公告)日：2011-05-25
申请号：EP09167403.6
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C07F7/08 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R 1 R 2 N) n SiR 3 4-n (I)

wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

3. 发明授权

EP2154141B1 Precursors for depositing silicon-containing films and methods using same 有权
标题翻译：前体用于沉积含硅薄膜，以及它们的使用方法
公开(公告)号：EP2154141B1
公开(公告)日：2016-06-15
申请号：EP09167403.6
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C07F7/08 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025

4. 发明授权

EP2644609B1 Precursors for depositing silicon-containing films and methods of using same 有权
标题翻译：前体用于沉积含硅层和它们的使用方法
公开(公告)号：EP2644609B1
公开(公告)日：2015-07-08
申请号：EP13173925.2
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025

5. 发明公开

EP2644609A3 Precursors for depositing silicon-containing films and methods for making and using same 有权
标题翻译：前体用于沉积含硅层和它们的制备方法和使用
公开(公告)号：EP2644609A3
公开(公告)日：2013-11-06
申请号：EP13173925.2
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R 1 R 2 N) n SiR 3 4-n (I)

wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

6. 发明公开

EP2644609A2 Precursors for depositing silicon-containing films and methods for making and using same 有权
标题翻译：前体用于沉积含硅层和它们的使用方法
公开(公告)号：EP2644609A2
公开(公告)日：2013-10-02
申请号：EP13173925.2
申请日：2009-08-06
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Hansong, Cheng , Xiao, Manchao , Lal, Gauri Sankar , Gaffney, Thomas Richard , Zhou, Chenggang , Wu, Jingping
IPC分类号： C07F7/02 , C23C16/34
CPC分类号： C23C16/345 , C07F7/025
摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I):

(R 1 R 2 N) n SiR 3 4-n (I)

wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.
摘要翻译：氨基硅烷前体用于沉积含硅薄膜，和用于沉积由合成氨基硅烷含硅薄膜的前体的方法被描述。在一个，实施例提供了在氨基硅烷前体用于沉积含硅薄膜，其包括以下式（I）：€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ（R 1 R 2 N）N SIR 3 4-正€ƒ€ƒ€ƒ€ƒ€ƒ（I）worin取代基R 1和R 2各自独立地选自于烷基，1至20个碳原子和芳基含有6至30个碳原子，其包括选择，取代基中的至少一个R 1和R 2包括至少一个吸电子选自F，Cl，溴，I，CN，NO 2，PO（OR）2，OR，SO，SO 2选择取代基，SO 2 R和worin 中的R的至少一个吸电子取代基选自烷基或选择在芳基，R 3选自H，以烷基基团，或在芳基，和n是数字从1至4中

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