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1. 发明授权

EP1225194B1 Method of forming a dielectric interlayer film with organosilicon precursors 有权
标题翻译：一种生产有机硅使用的前体的层间绝缘层的过程
公开(公告)号：EP1225194B1
公开(公告)日：2008-10-01
申请号：EP02001014.6
申请日：2002-01-17
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Vincent, Jean Louise , O'Neill, Mark Leonard , Withers, Howard Paul, Jr. , Beck, Scott Edward , Vrtis, Raymond Nicholas
IPC分类号： C08G77/04 , C23C16/40 , H01L21/316
CPC分类号： C09D183/06 , B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633

2. 发明公开

EP1225194A3 Method of forming a dielectric interlayer film with organosilicon precursors 有权
标题翻译：一种生产有机硅使用的前体的层间绝缘层的过程
公开(公告)号：EP1225194A3
公开(公告)日：2002-09-18
申请号：EP02001014.6
申请日：2002-01-17
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Vincent, Jean Louise , O'Neill, Mark Leonard , Withers, Howard Paul, Jr. , Beck, Scott Edward , Vrtis, Raymond Nicholas
IPC分类号： C08G77/04 , C23C16/40 , H01L21/316
CPC分类号： C09D183/06 , B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633
摘要： A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.

3. 发明公开

EP1201603A2 Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch 有权
标题翻译：一种用于牺牲氧化的气相蚀刻过程中除去金属和二氧化硅处理
公开(公告)号：EP1201603A2
公开(公告)日：2002-05-02
申请号：EP01124377.1
申请日：2001-10-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Robertson, Eric Anthony, III , Beck, Scott Edward
IPC分类号： B81C1/00 , H01L21/311
CPC分类号： H01L21/02049 , B81C1/00936 , H01L21/31116
摘要： A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction byproducts. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.
摘要翻译：提供了一种用于制造一个集成的微机械装置和在单个芯片上的微电子器件的过程中除去硅表面的牺牲材料以及金属污染方法，其包括：使用的反应室的温度适合调节所述芯片的温度的步骤 β-二酮的选择和微机械和微电子器件的设计中，循环吹扫使用惰性气体以除去大气气体和痕量的水，引入HF作为反应混合物在腔室和β-二酮到反应室中哪含有至少一个基片被蚀刻，流过衬底上的反应性混合物直到牺牲材料和金属污染已被基本上除去的，停止反应混合物的流动; 和循环吹扫该室，以除去残余的反应性混合物和任何剩余的反应副产物。任选氧化剂气体可被添加到所述反应混合物中以促进金属物种的氧化。

4. 发明授权

EP1225194B2 Method of forming a dielectric interlayer film with organosilicon precursors 有权
标题翻译：一种生产有机硅使用的前体的层间绝缘层的过程
公开(公告)号：EP1225194B2
公开(公告)日：2013-09-18
申请号：EP02001014.6
申请日：2002-01-17
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Vincent, Jean Louise , O'Neill, Mark Leonard , Withers, Howard Paul, Jr. , Beck, Scott Edward , Vrtis, Raymond Nicholas
IPC分类号： C08G77/04 , C23C16/40 , H01L21/316
CPC分类号： C09D183/06 , B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633

5. 发明授权

EP1201603B1 Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch 有权
标题翻译：一种用于牺牲氧化的气相蚀刻过程中除去金属和二氧化硅处理
公开(公告)号：EP1201603B1
公开(公告)日：2004-04-14
申请号：EP01124377.1
申请日：2001-10-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Robertson, Eric Anthony, III , Beck, Scott Edward
IPC分类号： B81C1/00 , H01L21/306
CPC分类号： H01L21/02049 , B81C1/00936 , H01L21/31116

6. 发明公开

EP1180553A1 CVD process for depositing copper on a barrier layer 审中-公开
标题翻译： CVD-Verfahren zum Auftragen des Kupfers auf eine Sperrschicht
公开(公告)号：EP1180553A1
公开(公告)日：2002-02-20
申请号：EP01119547.6
申请日：2001-08-14
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Beck, Scott Edward , Karwacki, Eugene Joseph, Jr. , Ciotti, Ralph J. , Norman, John Anthony Thomas
IPC分类号： C23C16/18 , C23C16/02 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76862 , C23C16/0236 , C23C16/18 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of at least one copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with a proton-donating molecule and/or a hydrogen-donating molecule. The donating molecule reduces positively charged copper to copper metal and reacts with fluorine on the barrier layer surface to produce volatile silicon fluoride, to thereby form a clean interfacial layer that promotes adhesion between the diffusion barrier layer and the copper film. The donating molecule is preferably methylsilane. The invention also encompasses a process for depositing a copper film on a surface of a diffusion barrier layer by chemical vapor deposition. The process includes: (a) depositing on the surface copper from a non-fluorinated copper precursor to form a continuous film containing copper; and (b) depositing on the continuous film copper from a fluorinated copper precursor. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film. Processes of the invention can include post-deposition annealing of the copper film.
摘要翻译：描述了通过至少一种铜前体的化学气相沉积在基底表面上沉积铜膜的方法。该方法包括用质子供体分子和/或给氢分子处理扩散阻挡层表面和/或沉积膜。捐赠分子将带正电荷的铜还原成铜金属，并在阻挡层表面上与氟反应以产生挥发性氟化硅，从而形成促进扩散阻挡层和铜膜之间粘附的干净的界面层。供体分子优选为甲基硅烷。本发明还包括通过化学气相沉积在扩散阻挡层的表面上沉积铜膜的方法。该方法包括：（a）在表面上从非氟化铜前体沉积铜，形成含铜的连续膜; 和（b）在氟化铜前体的连续膜上沉积铜。本发明的方法提供铜基膜，其中铜基膜的织构主要为（111）。这样的膜提供了在（111）膜下面的扩散阻挡层和覆盖（111）膜的铜之间具有增强的粘附性的衬底。本发明的方法可以包括铜膜的后沉积退火。

7. 发明公开

EP1201603A3 Method to remove metal and silicon oxide during gas-phase sacrificial oxide etch 有权
标题翻译：一种用于牺牲氧化的气相蚀刻过程中除去金属和二氧化硅处理
公开(公告)号：EP1201603A3
公开(公告)日：2002-12-18
申请号：EP01124377.1
申请日：2001-10-24
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Robertson, Eric Anthony, III , Beck, Scott Edward
IPC分类号： B81C1/00 , H01L21/306
CPC分类号： H01L21/02049 , B81C1/00936 , H01L21/31116
摘要： A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction byproducts. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.

8. 发明公开

EP1225194A2 Method of forming a dielectric interlayer film with organosilicon precursors 有权
标题翻译：一种生产有机硅使用的前体的层间绝缘层的过程
公开(公告)号：EP1225194A2
公开(公告)日：2002-07-24
申请号：EP02001014.6
申请日：2002-01-17
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Vincent, Jean Louise , O'Neill, Mark Leonard , Withers, Howard Paul, Jr. , Beck, Scott Edward , Vrtis, Raymond Nicholas
IPC分类号： C08G77/04 , C23C16/40 , H01L21/316
CPC分类号： C09D183/06 , B05D1/60 , C23C16/401 , H01L21/02126 , H01L21/02131 , H01L21/02216 , H01L21/02274 , H01L21/3121 , H01L21/31629 , H01L21/31633
摘要： A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.
摘要翻译：形成低介电常数层间的方法，电介质薄膜上的基材通过使足以在基片上沉积薄膜的化学气相沉积条件下，以有机硅前体，其包括甲硅烷基醚，甲硅烷醚低聚物，或在有机硅化合物含有一个或多个反应性基团，以形成层间绝缘膜，具有3.5或更小的介电常数。由上述方法形成的膜。

9. 发明公开

EP1052689A1 Method for anisotropic etching of copper thin films with a beta-diketone, a beta-ketoimine, or a breakdown product thereof 审中-公开
标题翻译：一种用于通过β-二酮，β-酮亚胺或它们的降解产物的方法各向异性地蚀刻铜薄膜的方法
公开(公告)号：EP1052689A1
公开(公告)日：2000-11-15
申请号：EP00109194.1
申请日：2000-05-09
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： George, Mark Allen , Bohling, David Arthur , Langan, John Giles , Beck, Scott Edward
IPC分类号： H01L21/3213 , C23F4/00
CPC分类号： C23F4/00 , H01L21/32136
摘要： This invention provides a method for anisotropically etching copper thin films for nanofabrication. Surface modifications in a direction perpendicular to the surface of the copper thin film facilitates anisotropic etching with a β-diketone, a β-ketoimine or a breakdown product thereof, such as 1,1,1,5,5,5-hexafluoro-2,5-pentanedione (H + hfac). The surface modification described can be anisotropic copper oxidation by exposure to a plasma or a directed ion beam. Ion implantation can be used to introduce the oxygen into the region where copper etching is desired or to damage the etch region enough to promote enhanced oxidation in that region. Masking schemes are also disclosed for use with ion implantation.
摘要翻译：本发明提供一种各向异性地蚀刻铜薄膜用于纳米制造的方法。在垂直于所述铜薄膜的表面的方向上的表面修饰便于各向异性蚀刻与β-二酮，β-酮亚胺或它们的分解产物，：如1,1,1,5,5,5-六氟-2- ，5戊二酮（H <+> HFAC）。描述的表面改性可以通过暴露于等离子体或定向离子束各向异性铜氧化。离子注入可用于引入氧气进入其中铜蚀刻期望或损坏蚀刻区域足以促进增强的氧化DASS区域的区域。因此掩蔽方案是游离缺失盘用于与离子注入使用。

10. 发明公开

EP0964439A1 Gas phase removal of SIO2/metallic contaminants from silicon 审中-公开
标题翻译： Gasphasen-Entfernen von Si02 / metallischen Verunreinigungen von einem Siliziumsubstrat
公开(公告)号：EP0964439A1
公开(公告)日：1999-12-15
申请号：EP99109395.6
申请日：1999-06-02
申请人： AIR PRODUCTS AND CHEMICALS, INC.
发明人： Robertson, Eric Anthony, III , Bohling, David Arthur , George, Mark Allen , Beck, Scott Edward
IPC分类号： H01L21/306
CPC分类号： H01L21/02049
摘要： The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a β-diketone and a β-diketoimine of the formula:
摘要翻译：本发明是用于从用于制造半导体器件的类型的衬底的表面热，气相去除氧化硅和含金属的污染物的方法，包括使衬底在适于产生并保持有效量的升高的温度下接触的清洗剂，以形成氧化硅和含金属污染物的挥发性副产物，并从表面除去挥发性副产物，其中清洗剂是氟化氢和含氧化合物的络合物，选自由以下结构的三氟乙酸，三氟乙酸酐，1,2-丙二酮，β-二酮和β-二酮亚胺中的一种或多种组成的组：

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