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1. 发明申请

WO2006110645A2 FLUORIDE LIQUID CLEANERS WITH POLAR AND NON-POLAR SOLVENT MIXTURES FOR CLEANING LOW-K-CONTAINING MICROELECTRONIC DEVICES 审中-公开
标题翻译：具有用于清洁低K含量微电子器件的极性和非极性溶剂混合物的氟化物液体清洗剂
公开(公告)号：WO2006110645A2
公开(公告)日：2006-10-19
申请号：PCT/US2006/013306
申请日：2006-04-10
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , MINSEK, David W. , BERNHARD, David D. , BAUM, Thomas H.
发明人： MINSEK, David W. , BERNHARD, David D. , BAUM, Thomas H.
IPC分类号： C11D3/24
CPC分类号： H01L21/02063 , C11D7/08 , C11D7/10 , C11D7/28 , C11D7/36 , C11D7/50 , C11D11/0047 , G03F7/423 , G03F7/426 , H01L21/31133
摘要： A liquid removal composition and process for removing post-ash residue, post-etch residue and/or bottom anti-reflective coating (BARC) residue from a microelectronic device having said residue thereon. The liquid removal composition includes a fluoride source and an amphiphilic solvent. The composition achieves high-efficiency removal of the residue material from the microelectronic device without damaging metal species or low-k dielectric materials employed in the microelectronic device architecture.
摘要翻译：一种液体去除组合物和用于从其上具有残留物的微电子器件除去灰分后残留物，蚀刻后残留物和/或底部抗反射涂层（BARC）残留物的方法。液体去除组合物包括氟化物源和两亲溶剂。该组合物可实现从微电子器件高效除去残余物质，而不会损坏微电子器件结构中使用的金属物质或低k电介质材料。

2. 发明申请

WO2007044447A2 COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL 审中-公开
标题翻译：选择蚀刻间隔氧化物材料的组合物和方法
公开(公告)号：WO2007044447A2
公开(公告)日：2007-04-19
申请号：PCT/US2006/038931
申请日：2006-10-04
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , RAJARATNAM, Martha , BERNHARD, David D. , MINSEK, David W.
发明人： RAJARATNAM, Martha , BERNHARD, David D. , MINSEK, David W.
IPC分类号： H01L21/336
CPC分类号： H01L21/31111 , H01L21/28052 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.
摘要翻译：一种栅间隔氧化物材料去除组合物和用于从其上具有其的微电子器件至少部分去除栅极间隔物氧化物材料的工艺。无水去除组合物包括至少一种有机溶剂，至少一种螯合剂，氟化氟化物：氟化氢成分和任选的至少一种钝化剂。该组合物通过在栅电极结构中使用的金属硅化物互连材料物质的最小蚀刻，实现了在微电子器件的表面上从栅电极附近相对于多晶硅和氮化硅选择性去除栅间隔物氧化物材料。

3. 发明申请

WO2007047365A3 METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开
公开(公告)号：WO2007047365A3
公开(公告)日：2007-04-26
申请号：PCT/US2006/039888
申请日：2006-10-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , RATH, Melissa K. , BERNHARD, David D. , BAUM, Thomas H. , JIANG, Ping , ZHOU, Renjie , KORZENSKI, Michael B.
发明人： RATH, Melissa K. , BERNHARD, David D. , BAUM, Thomas H. , JIANG, Ping , ZHOU, Renjie , KORZENSKI, Michael B.
IPC分类号： C11D7/50
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

4. 发明申请

WO2006138235A2 COMPOSITIONS AND METHODS FOR SELECTIVE REMOVAL OF METAL OR METAL ALLOY AFTER METAL SILICIDE FORMATION 审中-公开
标题翻译：金属硅化物形成后选择性去除金属或金属合金的组合物和方法
公开(公告)号：WO2006138235A2
公开(公告)日：2006-12-28
申请号：PCT/US2006/022859
申请日：2006-06-13
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , BERNHARD, David D. , WANG, Weihua , BAUM, Thomas H.
发明人： BERNHARD, David D. , WANG, Weihua , BAUM, Thomas H.
IPC分类号： H01L21/00
CPC分类号： H01L21/32134 , C23F1/26 , C23F1/28
摘要： An aqueous metal etching composition useful for removal of metals such as nickel, cobalt, titanium, tungsten, and alloys thereof, after formation of metal silicides via rapid thermal annealing during complementary metal-oxide-semiconductor (CMOS) transistor fabrication. The aqueous metal etching composition is also useful for selective removal of metal silicides and/or metal nitrides for wafer re-work. In one formulation, the aqueous metal etching composition contains oxalic acid, and a chloride-containing compound, and in other formulations, the composition contains an oxidizer, such as hydrogen peroxide, and a fluoride source, e.g., borofluoric acid. The composition in another specific formulation contains borofluoric acid and boric acid for effective etching of nickel, cobalt, titanium, tungsten, metal alloys, metal silicides and metal nitrides, without attacking the dielectric and the substrate.
摘要翻译：在互补金属氧化物半导体（CMOS）晶体管制造中通过快速热退火形成金属硅化物之后，可用于去除诸如镍，钴，钛，钨及其合金的金属的含水金属蚀刻组合物。含水金属蚀刻组合物还可用于选择性去除金属硅化物和/或金属氮化物用于晶片再加工。在一种配方中，含水金属蚀刻组合物含有草酸和含氯化合物，并且在其它配方中，该组合物含有氧化剂，例如过氧化氢和氟化物源，例如硼氟酸。另一具体制剂中的组合物含有硼氟酸和硼酸，用于有效地蚀刻镍，钴，钛，钨，金属合金，金属硅化物和金属氮化物，而不侵蚀电介质和基底。

5. 发明申请

WO2008098034A1 COMPOSITION AND PROCESS FOR THE SELECTIVE REMOVAL OF TISIN 审中-公开
标题翻译：组合物和选择性去除组织的过程
公开(公告)号：WO2008098034A1
公开(公告)日：2008-08-14
申请号：PCT/US2008/053142
申请日：2008-02-06
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , WALKER, Elizabeth , COOPER, Emanuel I. , LIU, Jun , BERNHARD, David D.
发明人： WALKER, Elizabeth , COOPER, Emanuel I. , LIU, Jun , BERNHARD, David D.
IPC分类号： H01L21/08
CPC分类号： H01L21/32134 , H01L45/06 , H01L45/126 , H01L45/16
摘要： An aqueous removal composition and process for removing heater material, including TiSiN, from a microelectronic device having said material thereon. The aqueous removal composition includes at least one fluoride source, at least one passivating agent, and at least one oxidizing agent. The composition selectively removes TiSiN relative to oxides and nitrides that are adjacently present.
摘要翻译：一种除水组合物和从其上具有所述材料的微电子装置除去包括TiSiN的加热材料的方法。含水去除组合物包括至少一种氟化物源，至少一种钝化剂和至少一种氧化剂。组合物相对于相邻的氧化物和氮化物选择性除去TiSiN。

6. 发明申请

WO2007027522A3 COMPOSITION AND METHOD FOR REMOVING THICK FILM PHOTORESIST 审中-公开
公开(公告)号：WO2007027522A3
公开(公告)日：2007-03-08
申请号：PCT/US2006/033237
申请日：2006-08-25
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , BERNHARD, David D. , RATH, Melissa K.
发明人： BERNHARD, David D. , RATH, Melissa K.
IPC分类号： G03F7/26 , G03F7/42
摘要： A thick film photoresist and/or residue removal composition and process for removing thick film photoresist and/or post-ash and post-etch residue from a microelectronic assembly having same thereon. The removal composition includes at least one organic acid, at least one organic solvent, and water. The composition achieves at least partial removal of thick film photoresist and residue from the surface of the microelectronic assembly with minimal etching of metal species on the assembly and without damage to low-k dielectric materials employed in the assembly architecture.

7. 发明公开

EP1945748A2 METALS COMPATIBLE PHOTORESIST AND/OR SACRIFICIAL ANTIREFLECTIVE COATING REMOVAL COMPOSITION 审中-公开
标题翻译： METALS兼容光致抗蚀剂和/或牺牲防反射涂层除去组合
公开(公告)号：EP1945748A2
公开(公告)日：2008-07-23
申请号：EP06836276.3
申请日：2006-10-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： RATH, Melissa K. , BERNHARD, David D. , BAUM, Thomas H. , JIANG, Ping , ZHOU, Renjie , KORZENSKI, Michael B.
IPC分类号： C11D7/50
CPC分类号： C11D3/26 , C09D9/04 , C11D3/30 , C11D3/3773 , C11D3/43 , C11D7/32 , C11D7/3209 , C11D11/0047 , C23G1/20 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/3212
摘要： A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture.

8. 发明公开

EP1949424A2 COMPOSITION AND METHOD FOR SELECTIVELY ETCHING GATE SPACER OXIDE MATERIAL 审中-公开
标题翻译：组合物和方法对于GATE间隙层的氧化物材料选择性蚀刻
公开(公告)号：EP1949424A2
公开(公告)日：2008-07-30
申请号：EP06816297.3
申请日：2006-10-04
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： RAJARATNAM, Martha , BERNHARD, David D. , MINSEK, David W.
IPC分类号： H01L21/336
CPC分类号： H01L21/31111 , H01L21/28052 , H01L29/6653 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A gate spacer oxide material removal composition and process for at least partial removal of gate spacer oxide material from a microelectronic device having same thereon. The anhydrous removal composition includes at least one organic solvent, at least one chelating agent, a base fluoride:acid fluoride component, and optionally at least one passivator. The composition achieves the selective removal of gate spacer oxide material relative to polysilicon and silicon nitride from the vicinity of the gate electrode on the surface of the microelectronic device with minimal etching of metal silicide interconnect material species employed in the gate electrode architecture.

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