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1. 发明申请

WO2006101767A2 SYSTEM FOR DELIVERY OF REAGENTS FROM SOLID SOURCES THEREOF 审中-公开
标题翻译：用于从其固体来源递送试剂的系统
公开(公告)号：WO2006101767A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/008530
申请日：2006-03-09
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , MARGANSKI, Paul, J. , DIETZ, James, I. , SWEENEY, Joseph, D.
发明人： MARGANSKI, Paul, J. , DIETZ, James, I. , SWEENEY, Joseph, D.
IPC分类号： B01J16/00
CPC分类号： B01J7/00 , B01J2219/00094 , B01J2219/00141 , B01J2219/00146 , C23C14/48 , C23C14/564 , C23C16/4405 , C23C16/4481
摘要： A system (10) for delivery of reagent from a solid source thereof, comprising a structure (16, 22, 24) arranged to retain a solid source material (30) in confinement by at least a portion of the structure, for heating and generation of vapor from the solid source material by volatilization thereof, a heat source (82) arranged to heat the solid source material for such volatilization, and a vapor dispensing assembly (52, 54) arranged to discharge the vapor from the system. A high conductance valve (1510) is also described, suitable for use as a dispensing control valve for a reagent storage and dispensing vessel, e.g., a vessel containing a semiconductor manufacturing reagent that is dispensed at low pressure. The high conductance valve includes a valve body (1512) in which inlet and outlet passages are substantially perpendicular to one another, with their interior extremities communicating with a valve chamber (1536) containing a selectively positionable valve element movable between a fully open and fully closed position. Valve flow coefficient (C V ) values on the order of 2.7 to 2.9 are achievable by such high conductance valve, enabling the valve to achieve superior dispensing operation even in extremely low pressure regimes, e.g., below 20 torr.
摘要翻译：一种用于从其固体源输送试剂的系统（10），包括结构（16,22,24），所述结构被布置成通过所述结构的至少一部分约束地固定固体源材料（30），用于加热和产生通过其固体来源于固体源材料的蒸汽，布置成加热用于这种挥发的固体源材料的热源（82）和布置成从系统排出蒸气的蒸气分配组件（52,54）。还描述了适用于试剂储存和分配容器的分配控制阀的高电导阀（1510），例如包含在低压下分配的半导体制造试剂的容器。高电导阀包括阀体（1512），入口和出口通道基本上彼此垂直，其内端与阀室（1536）连通，该阀室包含可选择性定位的阀元件，阀元件可在完全打开和完全关闭之间移动位置。通过这种高电导阀可以实现2.7至2.9级的阀流量系数（C VAL）值，即使在极低压力条件下也能实现优异的分配操作，例如低于20托。

2. 发明申请

WO2005043588A2 GAS-USING FACILITY INCLUDING PORTABLE DRY SCRUBBER SYSTEM AND/OR OVER-PRESSURE CONTROL ARRANGEMENT 审中-公开
标题翻译：气体使用设施，包括便携式干洗机系统和/或过压控制装置
公开(公告)号：WO2005043588A2
公开(公告)日：2005-05-12
申请号：PCT/US2004/033916
申请日：2004-10-14
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.? , MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , SHREVE, Theodore, A. , OLANDER, Karl, W.
发明人： MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , SHREVE, Theodore, A. , OLANDER, Karl, W.
IPC分类号： H01L
CPC分类号： H01L21/67046 , B01D53/0415 , B01D2251/30 , B01D2251/40 , B01D2251/60 , B01D2253/1124 , B01D2257/93 , B01D2258/0216 , B01D2259/40009 , B01D2259/40084 , B01D2259/402 , B01D2259/4525 , B01D2259/4541
摘要： A gas-using facility including a portable dry scrubber system and/or over-pressure control arrangement. The portable dry scrubber system is of a unitary modular form, accommodating transport and ready set-up, take-down, and redeployment in the process facility. The over-pressure control arrangement provides capability for release of over-pressure gas from a compressed gas storage vessel during an over-pressure event, e.g., overheating of a compressed gas cylinder during a semiconductor foundry fire, while avoiding the bulk release of the entire vessel contents that occurs when conventional pressure relief devices are employed.
摘要翻译：包括便携式干洗涤器系统和/或过压控制装置的使用气体的设备。便携式干洗器系统为单一模块化形式，适用于运输和准备设置，拆卸和在工艺设施中重新部署。过压控制装置提供了在过压事件期间从压缩气体储存容器中释放过压气体的能力，例如在半导体铸造炉火过程中压缩气体筒过热，同时避免整体释放整个当使用传统的压力释放装置时发生的容器内容物。

3. 发明申请

WO2007085008A2 APPARATUS AND METHOD FOR USE OF INDIUM CHLORIDE TO DELIVER INDIUM VAPOR TO ION SOURCE 审中-公开
标题翻译：使用氯化镉将离子源蒸发的装置和方法
公开(公告)号：WO2007085008A2
公开(公告)日：2007-07-26
申请号：PCT/US2007/060810
申请日：2007-01-20
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , KAIM, Robert , MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , ARNO, Jose, I.
发明人： KAIM, Robert , MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , ARNO, Jose, I.
IPC分类号： H01L21/00
CPC分类号： C23C14/22 , C23C16/4485 , H01J37/08 , H01J37/3171 , H01J2237/006
摘要： An ion implantation system (100) including an ion source adapted to ionize a precursor vapor to form ions for implantation in a substrate (30), a material storage and dispensing apparatus including a vessel (102) adapted to hold precursor, and a dispensing assembly (104, 108) coupled to the vessel for dispensing precursor from the vessel. The dispensing assembly is coupled with the ion source (10), and a heater (106) is adapted for heating of the precursor in the vessel so that precursor dispensed from said apparatus to the ion source is maintained in a vapor phase for implantation of ions derived therefrom. Such system is adaptable for delivery of indium monochloride, e.g., from a portable material storage and dispensing apparatus, without the necessity of a vaporizer integrated into the housing of the ion source, and without the handling and processing issues attendant the use of indium trichloride.
摘要翻译：一种离子注入系统（100），其包括适于电离前体蒸汽以形成用于注入衬底（30）的离子的离子源，包括适于保持前体的容器（102）的材料储存和分配设备，以及分配组件（104,108），其耦合到所述容器以从所述容器分配前体。分配组件与离子源（10）耦合，并且加热器（106）适于加热容器中的前体，使得从所述装置分配到离子源的前体保持在用于注入离子的气相从其衍生。这种系统适用于例如从便携式材料储存和分配装置输送一氯化铟，而不需要将蒸发器整合到离子源的壳体中，并且不需要与三氯化铟的使用有关的处理和处理问题。

4. 发明申请

WO2005019797A2 COLORIMETRIC GAS DETECTOR AND WINDOWED PROCESS CHAMBER 审中-公开
标题翻译：比色气体检测器和窗式加工室
公开(公告)号：WO2005019797A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/025339
申请日：2004-08-05
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , TOM, Glenn, M. , ARNO, Jose, I. , BAUM, Thomas, H. , ROEDER, Jeffrey, F. , HILLS, James, R.
发明人： MARGANSKI, Paul, J. , SWEENEY, Joseph, D. , TOM, Glenn, M. , ARNO, Jose, I. , BAUM, Thomas, H. , ROEDER, Jeffrey, F. , HILLS, James, R.
IPC分类号： G01N
CPC分类号： G01N21/783
摘要： A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.
摘要翻译：窗式腔室，例如半导体制造处理腔室，例如洗涤器，沉积腔室，热反应器等，其包括其中具有辐射透射窗口的端口。内部布置在腔室内的是（i）在窗户内表面上的一次性薄膜和/或（ii）以与窗户可视关系布置的比色介质，使得可以通过窗户感知比色变化，例如视觉上或者通过光学传感装置，当比色介质暴露于目标气体物质时。还公开了一种气体检测制品，其包括对暴露于其中的至少一种目标气体物质的存在进行比色响应的聚合物材料。

5. 发明申请

WO2009002893A8 COMPONENT FOR SOLAR ADSORPTION REFRIGERATION SYSTEM AND METHOD OF MAKING SUCH COMPONENT 审中-公开
标题翻译：用于太阳能吸附制冷系统的组件及制造该组件的方法
公开(公告)号：WO2009002893A8
公开(公告)日：2008-12-31
申请号：PCT/US2008/067824
申请日：2008-06-22
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
发明人： CARRUTHERS, J., Donald , BOGGS, Karl , WANG, Luping , WILSON, Shaun , ARNO, Jose, I. , MARGANSKI, Paul, J. , BILODEAU, Steven, M. , ZOU, Peng , BOBITA, Brian , SWEENEY, Joseph, D. , EDWARDS, Douglas
IPC分类号： F25B17/08 , F25B30/04 , F25B35/04
摘要： An adsorption structure is described that includes at least one adsorbent member formed of an adsorbent material and at least one porous member provided in contact with a portion of the adsorbent member to allow gas to enter and exit the portion of the adsorbent member. Such adsorption structure is usefully employed in adsorbent-based refrigeration systems. A method also is described for producing an adsorbent material, in which a first polymeric material is provided having a first density and a second polymeric material is provided having a second density, in which the second polymeric material is in contact with the first polymeric material to form a structure. The structure is pyrolyzed to form a porous adsorbent material including a first region corresponding to the first polymeric material and a second region corresponding to the second polymeric material, in which at least one of the pore sizes and the pore distribution differs between the first region and the second region.
摘要翻译：描述了一种吸附结构，其包括由吸附材料形成的至少一个吸附构件和设置成与吸附构件的一部分接触以允许气体进入和离开该部分的至少一个多孔构件的吸附构件。这种吸附结构可用于基于吸附剂的制冷系统。还描述了一种制造吸附剂材料的方法，其中提供具有第一密度的第一聚合物材料和提供具有第二密度的第二聚合物材料，其中第二聚合物材料与第一聚合物材料接触以形成形成一个结构。该结构被热解以形成多孔吸附材料，其包括对应于第一聚合物材料的第一区域和对应于第二聚合物材料的第二区域，其中孔径和孔隙分布中的至少一个在第一区域和第二个区域。

6. 发明申请

WO2005025733A2 CHEMISORBENT SYSTEM FOR ABATEMENT OF EFFLUENT SPECIES 审中-公开
标题翻译：化学吸附剂系统用于消除流出物种
公开(公告)号：WO2005025733A2
公开(公告)日：2005-03-24
申请号：PCT/US2004/029382
申请日：2004-09-10
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , MARGANSKI, Paul, J. , SWEENEY, Joseph, D.
发明人： MARGANSKI, Paul, J. , SWEENEY, Joseph, D.
IPC分类号： B01J
CPC分类号： B01D53/685 , B01D2258/0216
摘要： A dry scrubbing system for treatment of effluent from an upstream effluent-generating process. The dry scrubbing system accommodates operation in a process window involving substantial variation in process conditions, e.g., flow rate and/or concentration, of scrubbable gas species in the effluent. Multiple scrubbing media are utilized in the dry scrubbing system, each optimal in a regime of the operating window, and together ensuring at least a predetermined level of removal of scrubbable gas species over the entire operating window. In a specific aspect, gaseous phosphorus in the effluent is abated by use of potassium hydroxide as an active abatement agent.
摘要翻译：用于处理来自上游流出物生成过程的流出物的干洗涤系统。干洗涤系统适应在处理窗口中的操作，该处理窗口涉及处理条件（例如流出物中可洗气体种类的流速和/或浓度）的显着变化。在干洗涤系统中使用多种洗涤介质，每种洗涤介质在操作窗口的状态下都是最佳的，并且一起确保在整个操作窗口上至少预定水平的可洗刷气体物质的去除。在一个具体的方面，通过使用氢氧化钾作为活性的消除剂来减少流出物中的气态磷。

7. 发明公开

EP2248153A2 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 失效转让
标题翻译：清洁离子源半导体处理系统
公开(公告)号：EP2248153A2
公开(公告)日：2010-11-10
申请号：EP09709805.7
申请日：2009-02-11
申请人： Sweeney, Joseph D. , Yedave, Sharad N. , Byl, Oleg , Kaim, Robert , Eldridge, David , Sergi, Steven , Feng, Lin , Bishop, Steven E. , Olander, Karl W. , Tang, Ying , Advanced Technology Materials, Inc.
发明人： SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , SERGI, Steven , FENG, Lin , BISHOP, Steven, E. , OLANDER, Karl, W. , TANG, Ying
IPC分类号： H01L21/265
CPC分类号： H01J37/3171 , C23C14/48 , C23C14/54 , C23C14/564 , H01J37/08 , H01J37/16 , H01J37/18 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing a reactive cleaning reagent enabling growth/etching of the filament in an ion source of the arc chamber, by appropriate control of temperature in the arc chamber to effect the desired filament growth or alternative filament etching. Also described is the use of reactive gases such as XeFx, WFx, AsFx, PFx and TaFx, wherein x has a stoichioimetrically appropriate value or range of values, for cleaning regions of ion implanters, or components of implanters, in in situ or ex situ cleaning arrangements, under ambient temperature, elevated temperature or plasma conditions. Among specific reactive cleaning agents, BrF3 is described as useful for cleaning ion implant systems or component(s) thereof, in in situ or ex situ cleaning arrangements. Also described is a method of cleaning the forelines of an ion implant system for at least partial removal of ionization-related deposit from said forelines, comprising contacting said forelines with a cleaning gas wherein said cleaning gas is chemically reactive with said deposit. Also described is a method of improving the performance and extending the lifetime of an ion implant system, comprising contacting the cathode with a gas mixture.

8. 发明申请

WO2012024310A2 ISOTOPICALLY-ENRICHED BORON-CONTAINING COMPOUNDS, AND METHODS OF MAKING AND USING SAME 审中-公开
标题翻译：含有同位素的含硼化合物及其制造方法和使用方法
公开(公告)号：WO2012024310A2
公开(公告)日：2012-02-23
申请号：PCT/US2011/047942
申请日：2011-08-16
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , YEDAVE, Sharad, N. , JONES, Edward, E. , ZOU, Peng , TANG, Ying , CHAMBERS, Barry, Lewis , RAY, Richard, S.
发明人： KAIM, Robert , SWEENEY, Joseph, D. , BYL, Oleg , YEDAVE, Sharad, N. , JONES, Edward, E. , ZOU, Peng , TANG, Ying , CHAMBERS, Barry, Lewis , RAY, Richard, S.
IPC分类号： C01B35/06 , C01B9/08
CPC分类号： C01B35/061 , C01P2006/88 , H01J2237/006 , H01J2237/08 , H01J2237/31701 , Y02P20/134
摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B 2 F 4 . Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
摘要翻译：包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率。该化合物可以具有化学式B2F4。对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

9. 发明申请

WO2011106750A2 METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM 审中-公开
标题翻译：用于增强离子植入系统中离子源的生命寿命和性能的方法和装置
公开(公告)号：WO2011106750A2
公开(公告)日：2011-09-01
申请号：PCT/US2011/026388
申请日：2011-02-26
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , KAIM, Robert , SWEENEY, Joseph, D. , AVILA, Anthony, M. , RAY, Richard, S.
发明人： KAIM, Robert , SWEENEY, Joseph, D. , AVILA, Anthony, M. , RAY, Richard, S.
IPC分类号： H01L21/265
CPC分类号： H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
摘要： An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
摘要翻译：通过利用同位素富集的掺杂剂材料或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

10. 发明申请

WO2010093380A1 ION SOURCE CLEANING IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
标题翻译：半导体加工系统中的离子源清洁
公开(公告)号：WO2010093380A1
公开(公告)日：2010-08-19
申请号：PCT/US2009/053520
申请日：2009-08-12
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , FENG, Lin , BISHOP, Steven, E. , OLANDER, W., Karl , TANG, Ying
发明人： SWEENEY, Joseph, D. , YEDAVE, Sharad, N. , BYL, Oleg , KAIM, Robert , ELDRIDGE, David , FENG, Lin , BISHOP, Steven, E. , OLANDER, W., Karl , TANG, Ying
IPC分类号： H01L21/265
CPC分类号： H01J37/08 , C23C14/48 , C23C14/54 , C23C14/564 , H01J27/08 , H01J37/16 , H01J37/18 , H01J37/3171 , H01J37/32862 , H01J2237/0209 , H01J2237/022 , H01J2237/082 , H01J2237/22
摘要： Cleaning of an ion implantation system or components thereof, utilizing temperature and/or a reactive cleaning reagent enabling growth/etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.
摘要翻译：使用温度和/或反应性清洗剂清洁离子注入系统或其组件，使得能够通过监测阴极偏置功率并根据比较值采取校正动作来增加/蚀刻用于离子注入系统的间接加热的阴极中的阴极以蚀刻或再生阴极。

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