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1. 发明申请

WO1997009737A1 WAFER SUPPORT SYSTEM 审中-公开
标题翻译： WAFER支持系统
公开(公告)号：WO1997009737A1
公开(公告)日：1997-03-13
申请号：PCT/US1996013998
申请日：1996-08-30
申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.
发明人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC. , HALPIN, Michael, W. , HAWKINS, Mark, R. , FOSTER, Derrick, W. , VYNE, Robert, M. , WENGERT, John, F. , VAN DER JEUGD, Cornelius, A. , JACOBS, Loren, R.
IPC分类号： H01L21/00
CPC分类号： C23C16/45521 , C23C16/455 , C23C16/4584 , C23C16/4586 , H01L21/67109 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要： A wafer support system comprising a segmented susceptor having top and bottom sections and gas flow passages therethrough. A plurality of spacers projecting from a recess formed in the top section of the susceptor support wafers in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the segmented susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The susceptor support arms are hollow and conduct the sweep gas from the drive shaft to the gas passages in the segmented susceptor. The gas passages within the segmented susceptor are arranged to provide even heat distribution from the sweep gas prior to delivery underneath the wafer. Short purge channels may be provided to deliver some of the sweep gas to regions surrounding the spacers to cause a continuous flow of protective purge gas around the spacers. A common bottom section may cooperate with a plurality of different top sections to form segmented susceptors suitable for supporting various sized wafers.
摘要翻译：一种晶片支撑系统，包括具有顶部和底部部分的分段式基座以及穿过其中的气体流动通道。从形成在基座的顶部的凹部突出的多个间隔件相对于凹部间隔开来。吹扫气体被引入到分段基座的底部部分，并且穿过气体流动通道，在凹槽中的至少一个出口周围排列并在间隔开的晶片的下方排出。吹扫气体在基座和晶片之间径向向外行进，以防止晶片的背面污染。气体通过中空驱动轴输送到基座下方的多臂感受器支架中。基座支撑臂是中空的，并将吹扫气体从驱动轴传导到分段基座中的气体通道。分段基座内的气体通道布置成在晶片下方分配之前提供均匀的来自吹扫气体的热分布。可以提供短的吹扫通道以将一些吹扫气体输送到围绕间隔物的区域，以引起隔离物周围的保护性吹扫气体的连续流动。共同的底部部分可以与多个不同的顶部部分配合以形成适合于支撑各种尺寸的晶片的分段式基座。

2. 发明申请

WO1997006288A1 PROCESS CHAMBER WITH INNER SUPPORT 审中-公开
标题翻译：具有内部支持的过程室
公开(公告)号：WO1997006288A1
公开(公告)日：1997-02-20
申请号：PCT/US1996012641
申请日：1996-08-01
申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.
发明人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC. , WENGERT, John, F. , JACOBS, Loren, R. , HALPIN, Michael, W. , FOSTER, Derrick, W. , VAN DER JEUGD, Cornelius, A. , VYNE, Robert, M. , HAWKINS, Mark, R.
IPC分类号： C23C16/44
CPC分类号： B01J3/006 , C23C16/44 , C23C16/455 , C23C16/45502 , C23C16/46 , C23C16/481 , H01L21/67115 , H01L21/68735 , H01L21/68785
摘要： An improved chemical vapor deposition reaction chamber having an internal support plate (40) to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls (12, 14). A central horizontal support plate (40) is provided between two lateral side rails (16, 18) of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region (66, 68), with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.
摘要翻译：改进的化学气相沉积反应室具有内部支撑板（40）以实现减压处理。腔室具有垂直横向的透镜状横截面，在双凸壁上壁和下壁（12,14）之间具有宽的水平尺寸和较短的垂直尺寸。中心水平支撑板（40）设置在室的两个侧向侧轨道（16,18）之间。在支撑板中形成大的圆形矩形孔，用于定位其上放置晶片的可旋转基座。基座的轴向下延伸穿过孔，并通过从腔室垂下的下管。支撑板将反应室分离成上部区域和下部区域（66,68），其中吹扫气体通过下部管道被引入下部区域以防止其中不希望的沉积。温度补偿环设置在基座周围并由连接到支撑板的手指支撑。温度补偿环可以是圆形的，或者可以被构造成符合支撑板孔的圆形矩形形状。环可以比上游更远离基座延伸下游。可以在环形温度补偿环和圆形矩形孔之间设置单独的牺牲石英板。石英板可以具有与孔紧密邻接的水平部分和垂直唇缘，以防止支撑板的失透。气体喷射器邻接室的入口凸缘并将工艺气体注入上部区域并将气体吹入下部区域。气体喷射器包括跨过室横向设置的多个独立控制的通道，通道在喷射器的出口处汇合，以允许在到达晶片之前将分离的流的相邻纵向边缘混合。

3. 发明公开

EP0996767A1 REFLECTIVE SURFACE FOR CVD REACTOR WALLS 失效
标题翻译：反射面的CVD反应器壁
公开(公告)号：EP0996767A1
公开(公告)日：2000-05-03
申请号：EP98934389.2
申请日：1998-07-09
申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.
发明人： OLSEN, Aage , HALPIN, Michael, W.
IPC分类号： C23C16/48 , H05B3/00 , F21V7/22 , G02B5/02 , H01L21/00
CPC分类号： G02B5/0215 , C23C14/12 , C23C14/28 , C23C16/481 , C30B25/105 , C30B31/12 , G02B5/0221 , G02B5/0268 , G02B5/0284
摘要： A reflector plate (100) is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface (104) is characterized by a plurality of adjoining depressions (106) with substantially no planar sections among the depressions. The width to depth ratio for the depressions averages over 3:1. Crests separating the depressions define an angle of greater than about 60°, thus providing a relatively smooth texture for the reflecting surface. The reflecting surface is thus easy to clean. A method of manufacturing the reflector plate comprises removing material from a planar metal surface by ball-end milling. The depth of each depression and degree of overlap with adjacent depressions can randomly vary within selected ranges. A highly specular finish is then provided on the stippled surface by gold electroplating.

4. 发明授权

EP0996767B1 REFLECTIVE SURFACE FOR CVD REACTOR WALLS 失效
标题翻译：反射面的CVD反应器壁
公开(公告)号：EP0996767B1
公开(公告)日：2003-09-17
申请号：EP98934389.2
申请日：1998-07-09
申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.
发明人： OLSEN, Aage , HALPIN, Michael, W.
IPC分类号： C23C16/48 , H05B3/00 , F21V7/22 , G02B5/02 , H01L21/00
CPC分类号： G02B5/0215 , C23C14/12 , C23C14/28 , C23C16/481 , C30B25/105 , C30B31/12 , G02B5/0221 , G02B5/0268 , G02B5/0284
摘要： A reflector plate (100) is provided for scattering radiant heat energy in a semiconductor processing reactor chamber to achieve uniform temperature across a substrate to be processed. The surface (104) is characterized by a plurality of adjoining depressions (106) with substantially no planar sections among the depressions. The width to depth ratio for the depressions averages over 3:1. Crests separating the depressions define an angle of greater than about 60°, thus providing a relatively smooth texture for the reflecting surface. The reflecting surface is thus easy to clean. A method of manufacturing the reflector plate comprises removing material from a planar metal surface by ball-end milling. The depth of each depression and degree of overlap with adjacent depressions can randomly vary within selected ranges. A highly specular finish is then provided on the stippled surface by gold electroplating.

5. 发明公开

EP0852628A1 PROCESS CHAMBER WITH INNER SUPPORT 失效
标题翻译：与内轴承结构工艺室
公开(公告)号：EP0852628A1
公开(公告)日：1998-07-15
申请号：EP96926233.0
申请日：1996-08-01
申请人： ADVANCED SEMICONDUCTOR MATERIALS AMERICA, INC.
发明人： WENGERT, John, F. , JACOBS, Loren, R. , HALPIN, Michael, W. , FOSTER, Derrick, W. , VAN DER JEUGD, Cornelius, A. , VYNE, Robert, M. , HAWKINS, Mark, R.
IPC分类号： B01J3 , C23C16 , H01L21
CPC分类号： B01J3/006 , C23C16/44 , C23C16/455 , C23C16/45502 , C23C16/46 , C23C16/481 , H01L21/67115 , H01L21/68735 , H01L21/68785
摘要： An improved chemical vapor deposition reaction chamber having an internal support plate (40) to enable reduced pressure processing. The chamber has a vertical-lateral lenticular cross section with a wide horizontal dimension and a shorter vertical dimension between bi-convex upper and lower walls (12, 14). A central horizontal support plate (40) is provided between two lateral side rails (16, 18) of the chamber. A large rounded rectangular aperture is formed in the support plate for positioning a rotatable susceptor on which a wafer is placed. The shaft of the susceptor extends downward through the aperture and through a lower tube depending from the chamber. The support plate segregates the reaction chamber into an upper region and a lower region (66, 68), with purge gas being introduced through the lower tube into the lower region to prevent unwanted deposition therein. A temperature compensation ring is provided surrounding the susceptor and supported by fingers connected to the support plate. The temperature compensation ring may be circular or may be built out to conform to the rounded rectangular shape of the support plate aperture. The ring may extend farther downstream from the susceptor than upstream. A separate sacrificial quartz plate may be provided between the circular temperature compensation ring and the rounded rectangular aperture. The quartz plate may have a horizontal portion and a vertical lip in close abutment with the aperture to prevent devitrification of the support plate. A gas injector abuts an inlet flange of the chamber and injects process gas into the upper region and purge gas into the lower region. The gas injector includes a plurality of independently controlled channels disposed laterally across the chamber, the channels merging at an outlet of the injector to allow mixing of the adjacent longitudinal edges of the separate flows well before reaching the wafer.

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