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1. 发明申请

WO2006110864A3 METHOD FOR IMPROVING SURFACE ROUGHNESS DURING ELECTRO-POLISHING 审中-公开
标题翻译：在电抛光过程中改善表面粗糙度的方法
公开(公告)号：WO2006110864A3
公开(公告)日：2008-09-25
申请号：PCT/US2006013804
申请日：2006-04-12
申请人： ACM RES INC , WANG HUI , HO FREDRICK , WANG JIAN
发明人： WANG HUI , HO FREDRICK , WANG JIAN
IPC分类号： C25D3/02
CPC分类号： C25F7/00 , B23H5/08 , B24B37/04 , B24B57/02
摘要： A surface is electropolished using a stream of electrolyte. A nozzle is used to apply the stream of electrolyte to the surface. The nozzle has an insulator wall and a partial electrode. The insulator wall and the partial electrode form a flow channel for the stream of electrolyte. The stream of electrolyte contacts the insulator wall and the partial electrode when the stream of electrolyte flows through the flow channel formed by the insulator wall and the partial electrode. The insulator wall is less electrically conductive than the partial electrode. A power supply is connected to the partial electrode. The power supply is configured to apply a charge to the stream of electrolyte through the partial electrode when the stream of electrolyte flows through the flow channel formed by the insulator wall and the partial electrode.
摘要翻译：使用电解质流对表面进行电抛光。使用喷嘴将电解液流施加到表面。喷嘴具有绝缘体壁和部分电极。绝缘体壁和部分电极形成用于电解质流的流动通道。当电解质流过由绝缘体壁和部分电极形成的流动通道时，电解质流与绝缘体壁和部分电极接触。绝缘体壁比部分电极导电性差。电源连接到部分电极。电源构造成当电解质流流过由绝缘体壁和部分电极形成的流动通道时，通过部分电极向电解质流施加电荷。

2. 发明申请

WO2005082057A3 CONTROLLING REMOVAL RATE UNIFORMITY OF AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION 审中-公开
标题翻译：一体化电路制造中电解过程的去除速率均匀性的控制
公开(公告)号：WO2005082057A3
公开(公告)日：2009-04-02
申请号：PCT/US2005006142
申请日：2005-02-23
申请人： ACM RES INC , WANG HUI , AFNAN MUHAMMED , WANG JIAN , GUTMAN FELIX , HO FREDERICK , CHOKSHI HIMANSHU J
发明人： WANG HUI , AFNAN MUHAMMED , WANG JIAN , GUTMAN FELIX , HO FREDERICK , CHOKSHI HIMANSHU J
IPC分类号： C25F3/16 , C25F7/00
CPC分类号： B23H5/08 , B24B37/04 , C25F3/02 , C25F5/00 , C25F7/00 , H01L21/32115
摘要： A metal layer formed on a wafer, the wafer having a center portion and an edge portion, is electropolished by aligning a nozzle and the wafer to position the nozzle adjacent to the center portion of the wafer. The wafer is rotated. As the wafer is rotated, a stream of electrolyte is applied from the nozzle onto a portion of the metal layer adjacent to the center portion of the wafer to begin to electropolish the portion of the metal layer with a triangular polishing profile to initially expose an underlying layer underneath the metal layer at a point.
摘要翻译：在晶片上形成的金属层（具有中心部分和边缘部分的晶片）通过对准喷嘴和晶片以将喷嘴定位成与晶片的中心部分相邻来进行电抛光。晶圆旋转。当晶片旋转时，电解质流从喷嘴施加到与晶片的中心部分相邻的金属层的一部分上，以开始以三角抛光轮廓对金属层的部分进行电解，以初始暴露底层在一点上金属层下方的层。

3. 发明申请

WO2005055283A3 MONITORING AN ELECTROPOLISHING PROCESS IN INTEGRATED CIRCUIT FABRICATION 审中-公开
标题翻译：监控整合电路制造中的电镀工艺
公开(公告)号：WO2005055283A3
公开(公告)日：2008-01-31
申请号：PCT/US2004039748
申请日：2004-11-26
申请人： ACM RES INC , WANG HUI , YIP HENRY , WANG JIAN , YU CHAW-CHI
发明人： WANG HUI , YIP HENRY , WANG JIAN , YU CHAW-CHI
IPC分类号： C25F3/00 , C25F3/22 , C25F7/00 , H01L20060101 , H01L21/02 , H01L21/321 , H01L21/70 , H01L21/768
CPC分类号： C25F3/16 , H01L22/14 , H01L22/26
摘要： An electropolishing process of a metal layer formed on a wafer used in integrated circuit fabrication includes rotating the wafer. As the wafer is rotated, a stream of electrolyte is applied through a nozzle to the metal layer at a first radial location on the wafer. The electropolishing process is monitored by measuring electrical resistance at the first radial location. The electrical resistance measured at the first radial location is compared to a first preset electrical resistance associated with the first radial location. An electropolishing charge applied at the first radial location is controlled based on the comparison of the electrical resistance measured at the first radial location to the first preset electrical resistance associated with the first radial location. After applying the stream of electrolyte at the first radial location, the stream of electrolyte is applied at a second radial location. Electrical resistance at the second radial location is measured. The electrical resistance measured at the second radial location is compared to a second preset electrical resistance, which is different than the first preset electrical resistance, associated with the second radial location. The electropolishing charge applied at the second radial location is controlled based on the comparison of the electrical resistance measured at the second radial location to the second preset electrical resistance associated with the second radial location.
摘要翻译：在用于集成电路制造的晶片上形成的金属层的电抛光工艺包括旋转晶片。当晶片旋转时，电晶体流通过喷嘴在晶片上的第一径向位置处施加到金属层。通过测量第一径向位置处的电阻来监测电抛光过程。将在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻进行比较。基于在第一径向位置处测量的电阻与与第一径向位置相关联的第一预设电阻的比较来控制施加在第一径向位置处的电抛光电荷。在第一径向位置施加电解质流之后，在第二径向位置施加电解质流。测量第二径向位置处的电阻。将在第二径向位置处测量的电阻与与第二径向位置相关联的第一预设电阻不同的第二预设电阻进行比较。基于在第二径向位置处测量的电阻与与第二径向位置相关联的第二预设电阻的比较来控制施加在第二径向位置处的电抛光电荷。

4. 发明公开

EP1495161A4 ELECTROPOLISHING AND ELECTROPLATING METHODS 审中-公开
标题翻译：电解抛光和电镀
公开(公告)号：EP1495161A4
公开(公告)日：2006-06-28
申请号：EP03746750
申请日：2003-04-11
申请人： ACM RES INC
发明人： WANG HUI , WANG JIAN , YIH PEIHAUR , WU HUIQUAN
IPC分类号： C25D5/18 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L21/768 , C25D5/00 , B23H3/00 , B23H5/00 , B23H7/00 , B23H9/00 , B23H11/00 , C25D5/08 , C25D5/48 , C25D5/50 , C25D5/52
CPC分类号： C25D3/02 , C25D3/38 , C25D5/18 , C25D7/123 , H01L21/2885 , H01L21/76834 , H01L21/7684 , H01L21/76877
摘要： In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

5. 发明公开

EP2003815A4 A DATA REMOTE MONITORING SYSTEM OF ESSENTIAL SECURITY AND A MONITORING METHOD THEREOF 有权
标题翻译： DATE远程监控系统的基本安全和安全程序THEREFOR
公开(公告)号：EP2003815A4
公开(公告)日：2012-07-04
申请号：EP07710958
申请日：2007-02-14
申请人： WANG JIAN
发明人： WANG JIAN
IPC分类号： H04L12/26
CPC分类号： H04L41/00 , H04L63/1408 , H04L63/1425

6. 发明专利

AU2003226367A8 Electropolishing and electroplating methods 未知
公开(公告)号：AU2003226367A8
公开(公告)日：2003-10-27
申请号：AU2003226367
申请日：2003-04-11
申请人： ACM RES INC
发明人： WANG JIAN , YIH PEIHAUR , WANG HUI , WU HUIQUAN
IPC分类号： C25D5/18 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L21/768 , C25D5/00 , B23H5/00 , C25D5/50 , B23H9/00 , B23H11/00 , C25D5/08 , B23H7/00 , C25D5/52 , B23H3/00 , C25D5/48
摘要： In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed regions within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer is planar above the recessed regions. The second current density range is greater than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second density being greater than the first density, and electroplating within a third current density range thereafter.

7. 发明专利

CA2479873A1 ELECTROPOLISHING AND ELECTROPLATING METHODS 未知
公开(公告)号：CA2479873A1
公开(公告)日：2003-10-23
申请号：CA2479873
申请日：2003-04-11
申请人： ACM RES INC
发明人： WANG HUI , WU HUIQUAN , YIH PEIHAUR , WANG JIAN
IPC分类号： C25D5/18 , C25D7/12 , H01L21/288 , H01L21/3205 , H01L21/768 , C25D5/00 , B23H3/00 , B23H5/00 , B23H7/00 , B23H9/00 , B23H11/00 , C25D5/08 , C25D5/48 , C25D5/50 , C25D5/52
摘要： In one aspect of the present invention, an exemplary method is provided for electroplating a conductive film on a wafer. The method includes electroplating a metal film on a semiconductor structure having recessed regions and non-recessed region within a first current density range before the metal layer is planar above recessed regions of a first density, and electroplating within a second current density range after the metal layer i s planar above the recessed regions. The second current density range is great er than the first current density range. In one example, the method further includes electroplating in the second current density range until the metal layer is planar above recessed regions of a second density, the second densi ty being greater than the first density, and electroplating within a third current density range thereafter.

8. 发明专利

AU2020102479A4 A method of KNN stock forecasts based on the short-term trends 未知
公开(公告)号：AU2020102479A4
公开(公告)日：2020-11-12
申请号：AU2020102479
申请日：2020-09-29
申请人： CHEN ZHIYAN MISS , KONG GUANCHAO MR , LIU ZHEYUAN MR , TANG YUZHENG MR , WANG JIAN MR , XU GUANGYI MR
发明人： LIU ZHEYUAN , KONG GUANCHAO , TANG YUZHENG , XU GUANGYI , CHEN ZHIYAN , WANG JIAN
IPC分类号： G06Q40/04 , G06F17/18 , G06N20/00
摘要： Abstract This invention is in the field of digital data processing and serves as a tool for predicting the dynamic stock markets. In order to realize the real-time prediction of stock prices, considering that methods based on deep learning generally require massive amounts of data and a long time consuming, they can achieve better training results. Therefore, this paper uses the KNN algorithm model in machine learning to realize the stock price Prediction. This method considers the stock price trend in the previous period of time, rather than the isolated stock price data of the previous trading day, and has better prediction performance in theory. Finally, experiments have confirmed that the improved KNN algorithm model is compared with the traditional KNN algorithm model and logic. The regression algorithm model has better prediction performance. sample i sample i +1 sample i+2 sample i sample 1+1 sample i+1 own properties own properties own properties sample i sample 1+2 sample i+2 own properties own properties2 own properties Figure 1 sample 1 sample i +1 sample i+2 sample i sample i+1 sample i +1 own properties 1 own properties 1 own properties 1 sample I sample i +2 sample i +2 own properties 2 own properties2 own properties 2 sample i -1 sample I sample i +1 related properties 1 related properties 1 related properties 1 sample i -2 sample I -1 sample i related related p 2 related properties 2 Figure 2

9. 发明专利

CA2965830A1 SOLAR ENERGY GARAGE DOOR AND ITS UNIT 未知
公开(公告)号：CA2965830A1
公开(公告)日：2018-11-01
申请号：CA2965830
申请日：2017-05-01
申请人： LIN HUAZI , WANG JIAN , LIN YUANHAO , ZHU BEILONG , MA HUA
发明人： LIN HUAZI , WANG JIAN , LIN YUANHAO , ZHU BEILONG , MA HUA
IPC分类号： F24S20/60 , E04B1/74 , F24D11/00 , H02S20/26 , H02S40/44
摘要： This disclosure provides a solar energy garage door comprises a unit of a solar energy garage door. The unit comprises a solar energy absorbing sheet; a transparent sheet covering said solar energy absorbing sheet; and a separator separated said solar energy absorbing sheet and said transparent sheet to form a hollow space. The door also comprises a set of movable said units connected by hinges one by one, each said unit having at least two rollers being able to move in a guide rail/track; and a structure for opening or closing said garage door.

10. 发明专利

SG164373A1 REAL-TIME OPERATING OPTIMIZED METHOD OF MULTI-INPUT AND MULTI-OUTPUT CONTINUOUS MANUFACTURE PROCEDURE 未知
公开(公告)号：SG164373A1
公开(公告)日：2010-09-29
申请号：SG2010052280
申请日：2005-12-27
申请人： WANG JIAN
发明人： WANG JIAN
摘要： A includes steps as follows: first, using plurality of pivotal operation conditions in the manufacture procedure as optimized variables, and using the technical target associating with the pivotal operation conditions as the objective function, then, calculating on line the grades vector between pivotal operation conditions and the technical target at current time according to historical data of pivotal operation conditions and the technical target, using correlation integral method or other methods, at last, using this grades vector to define the adjustment direction of the operation conditions. When the grades vector is positive or negative, the pivotal operation conditions should be adjusted in order to change the grades vector to zero.

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