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    • 1. 发明申请
    • VOLTAGE CHANGER CIRCUIT FOR SWITCHING A MULTITUDE OF TURN-ON VOLTAGE LEVELS
    • 转换器电路,用于切换开关电压等级的品种
    • WO2007051321A3
    • 2007-09-13
    • PCT/CH2006000388
    • 2006-07-25
    • ABB RESEARCH LTDBARBOSA PETERSTEIMER PETERDEWAR STEPHEN
    • BARBOSA PETERSTEIMER PETERDEWAR STEPHEN
    • H02M7/48
    • H02M7/487H02M2007/4835
    • The invention relates to a voltage changer circuit for switching a multitude of turn-on voltage levels at which for each phase (R, S, T), a first switching group (1) or, alternatively, n additional first switching groups (1.1,..., 1.n) are provided, n being = 1. In order to reduce the stored energy of the voltage changer circuit and to increase the indifference to and reduce losses, a second switching group (5) and a third switching group (6) are provided, each being constituted by a first gate turn-off switch (7, 8) with passive uncontrolled electronic component with unidirectional current flow direction, connected in an anti-parallel manner, and a second gate turn-off switch (9, 10) with a passive uncontrolled electronic component with unidirectional current flow direction, connected in an anti-parallel manner, by a capacitor (4, 14) and by a relief network (11, 12). The second switching group (5) is connected to the first controlled bidirectional power semiconductor switch (2) of the first switching group (1) and the third switching group (6) is connected to the second controlled bidirectional power semiconductor switch (3) of the first switching group (1). The circuit also has a first protective device (15) and a second protective device (16).
    • 提供了一种转换器电路,用于切换开关的电压电平的多个,其中,对于每个相(R,S,T)的第一开关组(1),或者可选地,在加入正另外的第一开关组(1.1,...,IN)被提供,其中 N> = 1。 为了减小转换器电路的和用于提高耐用性和降低损耗的第二开关组(5)和第三开关组(6)中存储的能量被提供,其在每种情况下由第一关断晶闸管(7,8)与反并联连接的被动非控制的电子 与单向通电方向和第二关断晶闸管(9,10)与单向通电方向的反并联连接的被动不可控电子部件,由电容器(4,14)成分和通过缓冲电路(11,12)形成,所述第二开关组( 5)(与(1)被连接在第一电路组的第一可控双向功率半导体开关2)和所述第三开关组(6)和(1)被连接在第一电路组的第二可控双向功率半导体开关(3)。 远提供第一安全装置(15)和第二保护装置(16)。
    • 2. 发明专利
    • Switchgear cell and converter circuit for switching multiplicity of voltage levels with switchgear cell such as this
    • 开关电池和转换器电路,用于切换电压等级与开关电池等的电容
    • JP2008259202A
    • 2008-10-23
    • JP2008086123
    • 2008-03-28
    • Abb Res Ltdアーベーベー・リサーチ・リミテッドAbb Research Ltd.
    • BARBOSA PETERSTEIMER PETERCHAUDHURI TOUFANN
    • H03K17/08H02M7/48H03K17/56
    • H02M7/483Y10T307/747
    • PROBLEM TO BE SOLVED: To provide a switchgear cell which stores as little electrical energy as possible during its operation and can be designed in a space-saving manner. SOLUTION: A switchgear cell has a group 1 of connection, the group of connection having a first and a second controllable bidirectional power semiconductor switch 2, 3 and a capacitor 25. The group of connection can have a third, fourth, fifth, and sixth controllable bidirectional power semiconductor switch 4, 5, 6, 7 and the first controllable bidirectional power semiconductor switch 2 can be connected back-to-back in series with the second controllable bidirectional power semiconductor switch 3, the third controllable bidirectional power semiconductor switch 4 can be connected back-to-back in series with the fourth controllable bidirectional power semiconductor switch 5. The capacitor 25 can be connected to the connection point of the first controllable bidirectional power semiconductor switch 2 to the second controllable bidirectional power semiconductor switch 3. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种开关柜,其在其操作期间存储尽可能少的电能,并且可以以节省空间的方式设计。 解决方案:开关单元具有连接组1,该组连接具有第一和第二可控双向功率半导体开关2,3和电容器25.该组连接可具有第三,第四,第五 和第六可控双向功率半导体开关4,5,6,7和第一可控双向功率半导体开关2可以与第二可控双向功率半导体开关3串联连接,第三可控双向功率半导体 开关4可以与第四可控双向功率半导体开关5串联连接。电容器25可以连接到第一可控双向功率半导体开关2的连接点到第二可控双向功率半导体开关3 版权所有(C)2009,JPO&INPIT
    • 3. 发明专利
    • CONVERTER CIRCUIT FOR SWITCHING OF A MULTIPLICITY OF SWITCHING VOLTAGE LEVELS
    • CA2587421C
    • 2012-04-17
    • CA2587421
    • 2004-11-22
    • ABB RESEARCH LTD
    • STEIMER PETERBARBOSA PETERMEYSENC LUC
    • H02M7/48H02M7/49
    • A converter circuit is specified for switching of a multiplicity of switching voltage levels, which have n first switching groups (1.1, ..., 1.n) for each phase (R, S, T), with the n-th first switching group (1.n) being formed by a first drivable bidirectional power semiconductor switch (2) and a second drivable bidirectional power semiconductor switch (3), and with the first first switching group (1.1) to the (n-1)-th switching group (1.(n-1)) each being formed by a first drivable bidirectional power. semiconductor switch (2) and a second drivable bidirectional power semiconductor switch (3), and by a capacitor (4) which is connected to the first and second drivable bidirectional power semiconductor switches (2, 3) with each of the n first switching groups (1.1, ..., 1.n) being connected in a linked form to the respectively adjacent first switching group (1.1, ..., 1.n), and with the first and the second drivable bidirectional power semiconductor switches (2, 3) in the first first switching group (1.1) being connected to one another. In order to reduce the stored electrical energy in the converter circuit, n >= 1, and p second switching groups (5.1, ..., 5.p) and p third switching groups (6.1, ..., 6.p) are provided, which each have a first drivable bidirectional power semiconductor switch (7, 8), a second drivable bidirectional power semiconductor switch (9, 10) and a capacitor (13, 14), where p >= 1. Each of the p second switching groups (5.1, ..., 5.p) is connected in a linked form to the respectively adjacent second switching group (5.1, ..., 5.p), and each of the p third switching groups (6.1, ..., 6.p) is connected in a linked form to the respectively adjacent third switching group (6.1, ..., 6.p). Furthermore, the first second and the first third switching group (5.1, 6.1) each have a third drivable bidirectional power semiconductor switch (11, 12) which is connected back--to-back in series with the respective second drivable bidirectional power semiconductor switch (9, 10), with the first second switching group (5.1) being connected to the first drivable bidirectional power semiconductor switch (2) in the n-th first switching group (1.n), and with the first third switching group (6.1) being connected to the second drivable bidirectional power semiconductor switch (3) in the n-th first switching group (1.n), and the capacitor (13) in the p-th second switching group (5.p) is connected in series with the capacitor (14) in the p-th third switching group (6.p).
    • 5. 发明专利
    • DE502007003184D1
    • 2010-04-29
    • DE502007003184
    • 2007-10-10
    • ABB RESEARCH LTD
    • BARBOSA PETERSTEIMER PETERCHAUDHURI TOUFANN
    • H02M7/49
    • A converter circuit for switching a large number of switching voltage levels is specified, in which a first switching group is provided for each. Second switching groups are provided, each having a first, second, third, fourth, fifth and sixth drivable bidirectional power semiconductor switch and capacitor. The first drivable bidirectional power semiconductor switch is reverse-connected in series with the second drivable bidirectional power semiconductor switch, the third drivable bidirectional power semiconductor switch is reverse-connected in series with the fourth drivable bidirectional power semiconductor switch, the first drivable bidirectional power semiconductor switch is connected to the capacitor, the third drivable bidirectional power semiconductor switch is connected to the capacitor, the fifth drivable bidirectional power semiconductor switch is directly connected to the fourth drivable bidirectional power semiconductor switch, and the sixth drivable bidirectional power semiconductor switch is directly connected to the second drivable bidirectional power semiconductor switch.
    • 7. 发明专利
    • AT461550T
    • 2010-04-15
    • AT07821126
    • 2007-10-10
    • ABB RESEARCH LTD
    • BARBOSA PETERSTEIMER PETERCHAUDHURI TOUFANN
    • H02M7/49
    • A converter circuit for switching a large number of switching voltage levels is specified, in which a first switching group is provided for each. Second switching groups are provided, each having a first, second, third, fourth, fifth and sixth drivable bidirectional power semiconductor switch and capacitor. The first drivable bidirectional power semiconductor switch is reverse-connected in series with the second drivable bidirectional power semiconductor switch, the third drivable bidirectional power semiconductor switch is reverse-connected in series with the fourth drivable bidirectional power semiconductor switch, the first drivable bidirectional power semiconductor switch is connected to the capacitor, the third drivable bidirectional power semiconductor switch is connected to the capacitor, the fifth drivable bidirectional power semiconductor switch is directly connected to the fourth drivable bidirectional power semiconductor switch, and the sixth drivable bidirectional power semiconductor switch is directly connected to the second drivable bidirectional power semiconductor switch.