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    • 2. 发明申请
    • NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    • 非反射式泵浦波长转换器
    • WO2010123814A1
    • 2010-10-28
    • PCT/US2010/031585
    • 2010-04-19
    • 3M INNOVATIVE PROPERTIES COMPANYLEATHERDALE, Catherine, A.SCHARDT, Craig, R.
    • LEATHERDALE, Catherine, A.SCHARDT, Craig, R.
    • H01L33/50
    • H01L27/156H01L33/502
    • A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.
    • 光源包括产生泵浦光的电致发光器件和包括用于吸收至少一些泵浦光的吸收元件的波长转换器。 第一层发光元件位于吸收元件附近,用于将能量从吸收元件非辐射传递到发光元件。 至少一些发光元件能够发射波长比泵浦光的波长长的光。 在一些实施例中,电致发光器件是发光二极管(LED),其具有位于LED有源层和发光元件之间的掺杂半导体层。 第一掺杂半导体层可以具有超过20nm的厚度。 可以定位第二层发光元件用于从第一层发光元件的非辐射能量传递。
    • 5. 发明申请
    • LIGHT SOURCE
    • 光源
    • WO2011046887A1
    • 2011-04-21
    • PCT/US2010/052224
    • 2010-10-12
    • 3M INNOVATIVE PROPERTIES COMPANYWAGNER, Nicole, J.SCHARDT, Craig, R.YANG, Zhaohui
    • WAGNER, Nicole, J.SCHARDT, Craig, R.YANG, Zhaohui
    • F21V5/00F21V5/04G02B3/00H01L25/075H01L51/52G02F1/13357
    • G02B3/0037H01L33/58
    • Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (C a ), an apparent focal point (f a ), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the C a and the f a are normalized, such that C a is located at distance 0 and f a is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or less of a corresponding lenslet base diameter.
    • 其中所述光源包括:单片发射半导体器件; 和小透镜阵列,所述小透镜光学和机械耦合到所述单片发射半导体器件; 其中所述单片发射半导体器件包括局部发光区域阵列,每个区域对应于给定的小透镜; 其中所述小透镜具有明显的曲率中心(Ca),视在焦点(fa),曲率半径(R)和小透镜基底直径(D),所述基底直径是所述小透镜在与所述透镜的交点处的宽度 单片发射半导体器件; 其中沿着Ca和fa之间的小透镜光轴的距离被归一化,使得Ca位于距离0处,并且fa位于点1处; 其中每个局部发光区域位于大于0且小于公式(I)的点处; 并且其中每个发光区域具有直径,所述发射区域直径测量相应的小透镜底座直径的三分之一或更小。