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1. 发明申请

WO2014055361A1 OPTICAL CONNECTOR 审中-公开
标题翻译：光学连接器
公开(公告)号：WO2014055361A1
公开(公告)日：2014-04-10
申请号：PCT/US2013/062265
申请日：2013-09-27
申请人： 3M INNOVATIVE PROPERTIES COMPANY , HAASE, Michael A. , SMITH, Terry L. , KOCH, Barry J. , WANG, Ding , MATHEWS, Alexander R.
发明人： HAASE, Michael A. , SMITH, Terry L. , KOCH, Barry J. , WANG, Ding , MATHEWS, Alexander R.
IPC分类号： G02B6/36 , G02B6/38 , G02B6/42
CPC分类号： G02B6/3883 , G02B6/3652 , G02B6/3676 , G02B6/3829 , G02B6/383 , G02B6/3839 , G02B6/3845 , G02B6/3853 , G02B6/3885 , G02B6/4214 , G02B6/43
摘要： Optical connectors are provided for connecting sets of optical waveguides, such as optical fiber ribbons to each other, to printed circuit boards, or to backplanes. The provided connectors utilize expanded beam optics with non-contact optical mating resulting in relaxed mechanical precision requirements. The provided connectors can have low optical loss, are easily scalable to high channel count (optical fibers per connector) and can be compatible with low insertion force blind mating.
摘要翻译：光连接器被提供用于将诸如光纤带彼此连接的光波导组连接到印刷电路板或背板。所提供的连接器利用具有非接触光学匹配的扩展光束光学器件，导致放松的机械精度要求。所提供的连接器可以具有低光损耗，易于扩展到高通道数（每个连接器的光纤），并且可以与低插入力盲配合兼容。

2. 发明申请

WO2014055226A1 OPTICAL CONNECTOR 审中-公开
标题翻译：光学连接器
公开(公告)号：WO2014055226A1
公开(公告)日：2014-04-10
申请号：PCT/US2013/059861
申请日：2013-09-16
申请人： 3M INNOVATIVE PROPERTIES COMPANY , HAASE, Michael A. , SMITH, Terry L. , KOCH, Barry J. , WANG, Ding , MATHEWS, Alexander R.
发明人： HAASE, Michael A. , SMITH, Terry L. , KOCH, Barry J. , WANG, Ding , MATHEWS, Alexander R.
IPC分类号： G02B6/38
CPC分类号： G02B6/383 , G02B6/3829 , G02B6/3861 , G02B6/3869 , G02B6/3881 , G02B6/3885 , G02B6/389 , G02B6/3897 , G02B6/40
摘要： Optical connectors are provided for connecting sets of optical wavcguides (104), such as optical fiber ribbons to each other, to printed circuit boards, or to backplanes. The provided connectors (100) include a housing (110) that has an attachment area (102) for receiving and permanently attaching a plurality of optical waveguides. Additionally, the provided connectors include a light coupling unit (120) disposed in and configured to move with the housing. The provided connectors also include a second attachment area (108) for receiving and permanently attaching to the plurality of optical waveguides that causes each optical waveguide to be bent between the two attachment areas. The provided connectors utilize expanded beam optics with non-contact optical mating resulting in relaxed mechanical precision requirements. The provided connectors can have low optical loss, are easily scalable to high channel count (optical fibers per connector) and can be compatible with low insertion force blind mating.
摘要翻译：提供光连接器用于将诸如光纤带彼此的光波导（104）组合到印刷电路板或背板。所提供的连接器（100）包括具有用于接收和永久地附接多个光波导的附接区域（102）的壳体（110）。另外，所提供的连接器包括布置在壳体中并配置成与壳体一起移动的光耦合单元（120）。所提供的连接器还包括第二连接区域（108），用于接收和永久地附接到多个光波导，其使得每个光波导在两个附接区域之间弯曲。所提供的连接器利用具有非接触光学匹配的扩展光束光学器件，导致放松的机械精度要求。所提供的连接器可以具有低光损耗，易于扩展到高通道数（每个连接器的光纤），并且可以与低插入力盲配合兼容。

3. 发明申请

WO2009075972A2 DOWN-CONVERTED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION 审中-公开
标题翻译：向下转换的发光二极管，提供简单的光提取
公开(公告)号：WO2009075972A2
公开(公告)日：2009-06-18
申请号：PCT/US2008/082766
申请日：2008-11-07
申请人： 3M INNOVATIVE PROPERTIES COMPANY , SMITH, Terry L. , KELLEY, Tommie W. , HAASE, Michael A. , LEATHERDALE, Catherine A.
发明人： SMITH, Terry L. , KELLEY, Tommie W. , HAASE, Michael A. , LEATHERDALE, Catherine A.
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L24/32 , H01L33/0079 , H01L33/08 , H01L33/44 , H01L33/502 , H01L2924/0002 , H01L2924/10158 , H01L2924/12041 , H01L2924/00
摘要： A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features.
摘要翻译：波长转换的发光二极管（LED）装置具有具有输出表面的LED。多层半导体波长转换器光学键合到LED。至少有一个LED和波长转换器具有光提取功能。

4. 发明申请

WO2010129412A1 RE-EMITTING SEMICONDUCTOR CONSTRUCTION WITH ENHANCED EXTRACTION EFFICIENCY 审中-公开
标题翻译：重新发射半导体结构，具有提高效率
公开(公告)号：WO2010129412A1
公开(公告)日：2010-11-11
申请号：PCT/US2010/033142
申请日：2010-04-30
申请人： 3M INNOVATIVE PROPERTIES COMPANY , YANG, Zhaohui , YI, Yasha , LEATHERDALE, Catherine A. , HAASE, Michael A. , SMITH, Terry L.
发明人： YANG, Zhaohui , YI, Yasha , LEATHERDALE, Catherine A. , HAASE, Michael A. , SMITH, Terry L.
IPC分类号： H01L33/20 , H01L33/08 , H01L33/00 , H01L25/16
CPC分类号： H01L33/08 , H01L25/167 , H01L33/0087 , H01L33/20 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.
摘要翻译：一叠半导体层（310）形成再发射半导体结构（RSC）。堆叠（310）包括将第一波长的光转换成第二波长的光的有源区（316），所述有源区（316）包括至少一个势阱。堆叠（310）还包括从堆叠的外表面延伸到活动区域的非活性区域（318）。凹陷（326）形成在从外表面延伸到非活动区域（318）的堆叠（310）中。平均凹陷深度为非活性区域的厚度的至少50％。或者，平均凹陷深度为最近的潜在井距的至少50％。还公开了凹陷（326）的其他替代表征。在平面图中，凹陷（326）可以具有至少40％的包装密度。凹陷（326）也可以具有与倾斜倾斜表面相关联的其投影表面积的大部分。

5. 发明申请

WO2009085594A2 DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 审中-公开
标题翻译：向下转换的光源具有均匀的波长发射
公开(公告)号：WO2009085594A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/086060
申请日：2008-12-09
申请人： 3M INNOVATIVE PROPERTIES COMPANY , SUN, Xiaoguang , HAASE, Michael A. , MILLER, Thomas J. , SMITH, Terry L. , KELLEY, Tommie W. , LEATHERDALE, Catherine A.
发明人： SUN, Xiaoguang , HAASE, Michael A. , MILLER, Thomas J. , SMITH, Terry L. , KELLEY, Tommie W. , LEATHERDALE, Catherine A.
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置被连接到半导体波长转换器。每个光源以各自的峰值波长发射光，并且光源的布置由峰值波长的第一范围表征。半导体波长转换器的特征在于当由光源布置泵浦时第二范围的峰值波长。第二范围的峰值波长比第一范围的峰值波长窄。半导体波长转换器的特征在于具有比光源的最长峰值波长更长的波长的吸收边缘。波长转换器也可以用于减少来自扩展光源的输出的波长变化。

6. 发明申请

WO2009048704A3 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
公开(公告)号：WO2009048704A3
公开(公告)日：2009-04-16
申请号：PCT/US2008/075710
申请日：2008-09-09
申请人： 3M INNOVATIVE PROPERTIES COMPANY , KELLEY, Tommie W. , HAASE, Michael A. , LEATHERDALE, Catherine A. , SMITH, Terry L.
发明人： KELLEY, Tommie W. , HAASE, Michael A. , LEATHERDALE, Catherine A. , SMITH, Terry L.
IPC分类号： H01L33/00
摘要： A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.

7. 发明申请

WO2011153034A1 LIGHT CONVERTING AND EMITTING DEVICE WITH MINIMAL EDGE RECOMBINATION 审中-公开
标题翻译：具有最小边缘重构的光转换和发射装置
公开(公告)号：WO2011153034A1
公开(公告)日：2011-12-08
申请号：PCT/US2011/037845
申请日：2011-05-25
申请人： 3M INNOVATIVE PROPERTIES COMPANY , HAASE, Michael A. , XIE, Jinqing , MILLER, Thomas J. , SMITH, Terry L.
发明人： HAASE, Michael A. , XIE, Jinqing , MILLER, Thomas J. , SMITH, Terry L.
IPC分类号： H01L33/50
CPC分类号： H01L33/36 , H01L33/005 , H01L33/50
摘要： Light emitting system (100), particularly, light emitting systems that utilize semiconductor wavelength converting regions (104), and methods of producing such systems are disclosed. The light emitting systems and methods of producing such systems seek to frustrate recombination of free carriers that are associated with wavelength converting regions.
摘要翻译：公开了发光系统（100），特别是利用半导体波长转换区域（104）的发光系统以及制造这种系统的方法。产生这种系统的发光系统和方法试图阻止与波长转换区域相关联的游离载体的重组。

8. 发明申请

WO2011026005A2 PROJECTION AND DISPLAY SYSTEM 审中-公开
标题翻译：投影和显示系统
公开(公告)号：WO2011026005A2
公开(公告)日：2011-03-03
申请号：PCT/US2010/047077
申请日：2010-08-30
申请人： 3M INNOVATIVE PROPERTIES COMPANY , WILLETT, Steven J. , WOLK, Martin B. , SMITH, Terry L. , AUERBACH, Roy A. , HAASE, Michael A. , SAXE, Steven G. , KELLEY, Tommie W.
发明人： WILLETT, Steven J. , WOLK, Martin B. , SMITH, Terry L. , AUERBACH, Roy A. , HAASE, Michael A. , SAXE, Steven G. , KELLEY, Tommie W.
IPC分类号： G03B21/20 , G03B21/28 , G03B27/00
CPC分类号： G03B21/204 , H04N9/3129 , H04N9/3138
摘要： A projection system and a display that incorporates the projection system are provided. The projection system includes at least one electroluminescent device that emits a first wavelength of light, at least one semiconductor multilayer stack that downconverts the first wavelength of light to a second wavelength of light, and a scanning optical element that transmits the light along a scanned direction. The electroluminescent device can be part of an array of electroluminescent devices, and can be monolithic. The semiconductor multilayer stack can be part of an array of semiconductor multilayer stacks, and can also be monolithic. The scanning optical element can be positioned to scan the electroluminescent device across the semiconductor multilayer stack, or it can be positioned to scan the downconverted light after it has left the semiconductor multilayer stack.
摘要翻译：提供了包含投影系统的投影系统和显示器。投影系统包括发射第一波长光的至少一个电致发光器件，将第一波长的光下变频为第二波长的光的至少一个半导体多层叠堆，以及沿着扫描方向传输光的扫描光学元件。电致发光器件可以是电致发光器件阵列的一部分，并且可以是单片的。半导体多层堆叠可以是半导体多层堆叠阵列的一部分，并且也可以是单片的。扫描光学元件可以被定位成扫描半导体多层叠堆上的电致发光器件，或者其可以被定位成在其已经离开半导体多层叠堆之后扫描下变频的光。

9. 发明申请

WO2010074913A2 ELECTRICAL CONNECTIONS FOR ANODIZED THIN FILM STRUCTURES 审中-公开
标题翻译：阳极化薄膜结构的电连接
公开(公告)号：WO2010074913A2
公开(公告)日：2010-07-01
申请号：PCT/US2009/066541
申请日：2009-12-03
申请人： 3M INNOVATIVE PROPERTIES COMPANY , THEISS, Steven D. , HAASE, Michael A.
发明人： THEISS, Steven D. , HAASE, Michael A.
IPC分类号： H01B5/14 , H01B1/00
CPC分类号： H01L21/76802 , H01L27/1214 , H01L27/124 , H01L2224/24137 , H05K3/4092 , Y10T29/49002 , Y10T29/49124 , Y10T29/49147 , Y10T428/12396
摘要： Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.
摘要翻译：描述了用于形成电连接第一薄膜金属化层和第二薄膜金属化层的电路的方法。通道形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化阻挡层和/或辅助衬垫。用于形成阻挡层的材料在阳极氧化期间基本上不能渗透阳极氧化溶液，并且破坏导电层和阻挡层之间的氧化物的形成。辅助垫是不可阳极氧化的，并且被阻挡层覆盖以基本上防止电流在阳极氧化过程中流过焊盘。阳极氧化后，屏障被删除。如果辅助垫具有足够的导电性，则可以在去除阻挡层后将其留在第一金属化层上。第二金属化层设置在阳极氧化层上方，与通孔连接区域中的第一导电层电接触。

10. 发明申请

WO2012173778A3 BOOSTER FILMS FOR SOLAR PHOTOVOLTAIC SYSTEMS 审中-公开
公开(公告)号：WO2012173778A3
公开(公告)日：2012-12-20
申请号：PCT/US2012/040066
申请日：2012-05-31
申请人： 3M INNOVATIVE PROPERTIES COMPANY , HAASE, Michael A.
发明人： HAASE, Michael A.
IPC分类号： H01L31/073
摘要： We describe stacked photovoltaic modules, and components thereof, in which at least one booster cell is combined with at least one primary cell in a stacked configuration. The booster cell may be in the form of a polycrystalline film disposed on a transparent substrate, such as a glass substrate, and the film may be patterned to form multiple booster cells. The booster cell includes an n-type layer and a p-type layer; the n-type layer may include polycrystalline zinc sulfide (ZnS), and the p-type layer may include polycrystalline zinc telluride (ZnTe). The n-type layer may have a band gap energy of at least 3.5 eV, and the p-type layer may have a band gap energy of at least 2 or at least 2.2 eV, or in a range from 2.2 to 2.3 eV. An intrinsic layer, also comprising polycrystalline ZnTe, may reside between the n-type and p-type layers.

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