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1. 发明申请

WO2010027648A1 I I-VI MQW VCSEL ON A HEAT SINK OPTICALLY PUMPED BY A GAN LD 审中-公开
标题翻译： I-VI MQW VCSEL在由GAN LD光电抽吸的散热器上
公开(公告)号：WO2010027648A1
公开(公告)日：2010-03-11
申请号：PCT/US2009054140
申请日：2009-08-18
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , MILLER THOMAS J , SUN XIAOGUANG
发明人： HAASE MICHAEL A , MILLER THOMAS J , SUN XIAOGUANG
IPC分类号： H01S5/04 , H01S5/183 , H01S5/347
CPC分类号： H01S5/041 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/024 , H01S5/1039 , H01S5/14 , H01S5/18308 , H01S5/2009 , H01S5/2022 , H01S5/2027 , H01S5/309 , H01S5/347 , H01S5/423 , H01S2301/18
摘要： Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light surce (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer slfack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive at the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.
摘要翻译：公开了光源。所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光线（170）发射的第一波长光（174）的至少一部分转换成至少部分相干的第二波长的光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。第一反射镜（120）在第二波长处基本上是反射的，并且包括第一多层悬置。第二反射镜（160）在第一波长处是基本上透射的，并且在第二波长处是部分反射和部分透射的。第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

2. 发明申请

WO2009075973A3 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：WO2009075973A3
公开(公告)日：2009-08-13
申请号：PCT/US2008082778
申请日：2008-11-07
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , MILLER THOMAS J , SUN XIAOGUANG
发明人： HAASE MICHAEL A , MILLER THOMAS J , SUN XIAOGUANG
IPC分类号： H01L33/00 , H01L33/08 , H01L33/32 , H01L33/34 , H01L33/50
CPC分类号： H01L33/08 , H01L33/0079 , H01L33/32 , H01L33/34
摘要： Light emitting devices and methods of fabricating the same are disclosed. The light emitting device includes a light emitting diode (LED) that emits blue or UV light and is attached to a semiconductor construction. The semiconductor construction includes a re-emitting semiconductor construction that includes at least one layer of a II-VI compound and converts at least a portion of the emitted blue or UV light to longer wavelength light. The semiconductor construction further includes an etch-stop construction that includes an AlInAs or a GaInAs compound. The etch-stop is capable of withstanding an etchant that is capable of etching InP.
摘要翻译：公开了发光器件及其制造方法。发光器件包括发射蓝色或紫外光并附着到半导体结构的发光二极管（LED）。半导体结构包括再发射半导体结构，其包括至少一层II-VI化合物，并将发射的蓝色或紫外光的至少一部分转换成更长波长的光。该半导体结构还包括包括AlInAs或GaInAs化合物的蚀刻停止结构。蚀刻停止能够承受能够蚀刻InP的蚀刻剂。

3. 发明申请

WO2011153141A3 LIGHT CONVERTING AND EMITTING DEVICE WITH SUPPRESSED DARK-LINE DEFECTS 审中-公开
标题翻译：具有抑制性暗线缺陷的光转换和发光装置
公开(公告)号：WO2011153141A3
公开(公告)日：2012-01-19
申请号：PCT/US2011038562
申请日：2011-05-31
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , SUN XIAOGUANG , XIE JUNQING
发明人： HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , SUN XIAOGUANG , XIE JUNQING
IPC分类号： H01L33/08 , H01L21/02 , H01L33/50
CPC分类号： H01L33/504 , H01L21/02477 , H01L21/0256 , H01L21/02568 , H01L33/08 , H01L33/50
摘要： Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.
摘要翻译：描述发光系统。特别地，描述了在这些系统中使用的发光系统和光转换组件。发光系统和部件形成为使得暗线缺陷不会影响发光系统的效率。

4. 发明申请

WO2009085594A3 DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 审中-公开
标题翻译：具有均匀波长发射的下变换光源
公开(公告)号：WO2009085594A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086060
申请日：2008-12-09
申请人： 3M INNOVATIVE PROPERTIES CO , SUN XIAOGUANG , HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
发明人： SUN XIAOGUANG , HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
IPC分类号： H01L33/00 , H01L33/50
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

5. 发明申请

WO2009158138A8 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：WO2009158138A8
公开(公告)日：2010-07-29
申请号：PCT/US2009045801
申请日：2009-06-01
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , ZHANG JUN-YING , MILLER THOMAS J
发明人： HAASE MICHAEL A , ZHANG JUN-YING , MILLER THOMAS J
IPC分类号： H01L33/50
CPC分类号： H01L25/0756 , H01L27/14603 , H01L27/14609 , H01L31/1013 , H01L33/44 , H01L33/50 , H01L51/5036 , H01L51/5262 , H01L2924/0002 , H01L2924/09701 , H01L2933/0091 , H01L2924/00
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.
摘要翻译：公开了半导体光转换结构。该半导体光转换构造包括：第一半导体层，用于吸收第一波长的至少一部分光; 用于将至少一部分在第一波长处吸收的光转换成在较长第二波长处的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。第一半导体层在第二波长处具有最大的第一折射率。第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

6. 发明申请

WO2009148717A3 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
标题翻译：具有粘结半导体波长转换器的发光二极管
公开(公告)号：WO2009148717A3
公开(公告)日：2010-02-18
申请号：PCT/US2009041521
申请日：2009-04-23
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , MILLER THOMAS J , OUDERKIRK ANDREW J , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
发明人： HAASE MICHAEL A , MILLER THOMAS J , OUDERKIRK ANDREW J , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
IPC分类号： H01L33/00 , H01L33/08 , H01L33/50
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/504 , H01L2924/0002 , H01L2924/00
摘要： An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.
摘要翻译：电致发光器件以泵浦波长发光。第一光致发光元件覆盖电致发光器件的第一和第二区域，并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域，并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。在一些实施例中，第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。蚀刻停止层可以分离第一和第二光致发光元件。

7. 发明申请

WO2009158138A3 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：WO2009158138A3
公开(公告)日：2010-03-18
申请号：PCT/US2009045801
申请日：2009-06-01
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , ZHANG JUN-YING , MILLER THOMAS J
发明人： HAASE MICHAEL A , ZHANG JUN-YING , MILLER THOMAS J
IPC分类号： H01L33/50
CPC分类号： H01L25/0756 , H01L27/14603 , H01L27/14609 , H01L31/1013 , H01L33/44 , H01L33/50 , H01L51/5036 , H01L51/5262 , H01L2924/0002 , H01L2924/09701 , H01L2933/0091 , H01L2924/00
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于吸收第一波长的至少一部分光的第一半导体层; 用于将在第一波长处吸收的光的至少一部分转换成更长的第二波长的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。第一半导体层在第二波长处具有最大的第一折射率。第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

8. 发明申请

WO2010027580A2 LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS 审中-公开
标题翻译：具有轻型封闭组件的光源
公开(公告)号：WO2010027580A2
公开(公告)日：2010-03-11
申请号：PCT/US2009051914
申请日：2009-07-28
申请人： 3M INNOVATIVE PROPERTIES CO , LEATHERDALE CATHERINE A , HAASE MICHAEL A , BALLEN TODD A , MILLER THOMAS J
发明人： LEATHERDALE CATHERINE A , HAASE MICHAEL A , BALLEN TODD A , MILLER THOMAS J
IPC分类号： H01L33/50
CPC分类号： H01L33/08 , H01L33/04 , H01L33/44 , H01L33/50
摘要： Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.
摘要翻译：公开了发光系统。发光系统包括从电致发光器件的顶表面发射第一波长的光的电致发光器件。发光系统还包括靠近电致发光器件的侧面的结构，用于阻挡否则将离开侧面的第一波长的光。发光系统还包括包括II-VI势阱的再发射半导体结构。再发射半导体结构接收离开电致发光器件的第一波长光，并将接收的光的至少一部分转换成第二波长的光。离开发光系统的第二波长的所有光的集成发射强度是离开发光系统的第一波长的所有光的集成发射强度的至少4倍。

9. 发明申请

WO2009158191A3 SEMICONDUCTOR LIGHT CONVERTING CONSTRUCTION 审中-公开
标题翻译：半导体光转换结构
公开(公告)号：WO2009158191A3
公开(公告)日：2010-03-25
申请号：PCT/US2009046835
申请日：2009-06-10
申请人： 3M INNOVATIVE PROPERTIES CO , ZHANG JUN-YING , SMITH TERRY L , HAASE MICHAEL A
发明人： ZHANG JUN-YING , SMITH TERRY L , HAASE MICHAEL A
IPC分类号： H01L33/50 , H01L33/44
CPC分类号： H01L33/44 , H01L33/08 , H01L33/502 , H01L2933/0091
摘要： Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a semiconductor potential well for converting at least a portion of light at a first wavelength to light at a longer second wavelength; an outer layer that is disposed on the semiconductor potential well and has a first index of refraction; and a structured layer that is disposed on the outer layer and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the outer layer and a plurality of openings that expose the outer layer. The semiconductor light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the outer layer in the plurality of openings. The overcoat has a third index of refraction that is greater than the second index of refraction.
摘要翻译：公开了半导体光转换结构。半导体光转换结构包括用于将第一波长的至少一部分光转换成较长第二波长的光的半导体势阱; 外层，其设置在所述半导体势阱上并具有第一折射率; 以及设置在外层上并且具有小于第一折射率的第二折射率的结构化层。结构化层包括直接设置在外层上的多个结构和暴露外层的多个开口。半导体光转换结构还包括直接设置在结构化层的至少一部分上的多个开口中的外层的一部分的结构化外涂层。外涂层具有大于第二折射率的第三折射率。

10. 发明申请

WO2009048704A2 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
标题翻译：具有结合的半导体波长转换器的发光二极管
公开(公告)号：WO2009048704A2
公开(公告)日：2009-04-16
申请号：PCT/US2008075710
申请日：2008-09-09
申请人： 3M INNOVATIVE PROPERTIES CO , KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A , SMITH TERRY L
发明人： KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A , SMITH TERRY L
IPC分类号： H01L33/00 , H01L33/02 , H01L33/22 , H01L33/50
CPC分类号： H01L33/22 , H01L25/0756 , H01L33/0079 , H01L33/02 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.
摘要翻译：发光二极管（LED）具有设置在基板上的各种LED层。能够将LED中产生的光的波长转换成更长波长的光的多层半导体波长转换器通过粘合层附着到LED的上表面。 LED内的一个或多个纹理表面用于提高光从LED传输到波长转换器的效率。在一些实施例中，波长转换器的一个或多个表面设置有纹理表面以增强转换器内产生的长波长光的提取效率。

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