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1. 发明申请

WO2010028146A2 ELECTRICALLY PIXELATED LUMINESCENT DEVICE 审中-公开
标题翻译：电子像素发光装置
公开(公告)号：WO2010028146A2
公开(公告)日：2010-03-11
申请号：PCT/US2009055885
申请日：2009-09-03
申请人： 3M INNOVATIVE PROPERTIES CO , ANDERSON JAMES E , WAGNER NICOLE J , KELLEY TOMMIE W , OUDERKIRK ANDREW J , SCHARDT CRAIG R , LEATHERDALE CATHERINE A , WATSON PHILIP E
发明人： ANDERSON JAMES E , WAGNER NICOLE J , KELLEY TOMMIE W , OUDERKIRK ANDREW J , SCHARDT CRAIG R , LEATHERDALE CATHERINE A , WATSON PHILIP E
IPC分类号： H01L33/36
CPC分类号： H01L27/156 , B41J2/45
摘要： Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, methods for using electrically pixelated luminescent devices.
摘要翻译：电像素化发光装置，形成电像素化发光装置的方法，包括电像素化发光装置的系统，使用电像素化发光装置的方法。

2. 发明申请

WO2010074987A3 LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER 审中-公开
标题翻译：具有双边波长转换器的发光装置
公开(公告)号：WO2010074987A3
公开(公告)日：2010-08-19
申请号：PCT/US2009067489
申请日：2009-12-10
申请人： 3M INNOVATIVE PROPERTIES CO , LEATHERDALE CATHERINE A , OUDERKIRK ANDREW J , KELLEY TOMMIE W
发明人： LEATHERDALE CATHERINE A , OUDERKIRK ANDREW J , KELLEY TOMMIE W
IPC分类号： H01L33/50
CPC分类号： H01L33/08
摘要： A light emitting device (200) includes a wavelength converter (204) attached to a light emitting diode (LED 202) The wavelength converter may have etched patterns on both the first and second sides. In some embodiments the first and second sides of the converter each include a respective structure having a different width at its top than at its base. The wavelength converter may include a first photoluminescent element (208) substantially overlying a first region (218) of the LED without overlying a second region (224) of the LED, while a second photoluminescent element (210) substantially overlies the second region without overlying the first region. In some embodiments a passivation layer is disposed over the etched pattern of the first side. A window layer may be disposed between the first and second photoluminescent elements, with non-epitaxial material disposed on first and second sides of one region of the window layer.
摘要翻译：发光器件（200）包括附接到发光二极管（LED 202）的波长转换器（204）。波长转换器可以在第一侧和第二侧都具有蚀刻图案。在一些实施例中，转换器的第一和第二侧各自包括在其顶部具有与其底部不同的宽度的相应结构。波长转换器可以包括基本上覆盖LED的第一区域（218）的第一光致发光元件（208），而不覆盖LED的第二区域（224），而第二光致发光元件（210）基本上覆盖在第二区域上而不覆盖第一个地区。在一些实施例中，钝化层设置在第一侧的蚀刻图案之上。窗口层可以设置在第一和第二光致发光元件之间，其中非外延材料设置在窗口层的一个区域的第一和第二侧上。

3. 发明申请

WO2009148717A3 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
标题翻译：具有粘结半导体波长转换器的发光二极管
公开(公告)号：WO2009148717A3
公开(公告)日：2010-02-18
申请号：PCT/US2009041521
申请日：2009-04-23
申请人： 3M INNOVATIVE PROPERTIES CO , HAASE MICHAEL A , MILLER THOMAS J , OUDERKIRK ANDREW J , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
发明人： HAASE MICHAEL A , MILLER THOMAS J , OUDERKIRK ANDREW J , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
IPC分类号： H01L33/00 , H01L33/08 , H01L33/50
CPC分类号： H01L33/08 , H01L25/0756 , H01L33/504 , H01L2924/0002 , H01L2924/00
摘要： An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.
摘要翻译：电致发光器件以泵浦波长发光。第一光致发光元件覆盖电致发光器件的第一和第二区域，并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域，并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。在一些实施例中，第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。蚀刻停止层可以分离第一和第二光致发光元件。

4. 发明申请

WO2010075177A3 METHOD OF MAKING DOUBLE-SIDED WAVELENGTH CONVERTER AND LIGHT GENERATING DEVICE USING SAME 审中-公开
标题翻译：制造双边波长转换器的方法和使用相同的光生成装置
公开(公告)号：WO2010075177A3
公开(公告)日：2010-08-19
申请号：PCT/US2009068541
申请日：2009-12-17
申请人： 3M INNOVATIVE PROPERTIES CO , KELLEY TOMMIE W , OUDERKIRK ANDREW J , LEATHERDALE CATHERINE A
发明人： KELLEY TOMMIE W , OUDERKIRK ANDREW J , LEATHERDALE CATHERINE A
IPC分类号： H01L33/50 , H01L33/08 , H01L33/20
CPC分类号： H01L33/504 , H01L25/0756 , H01L33/08 , H01L33/20 , H01L2924/0002 , H01L2933/0033 , H01L2933/0041 , H01L2924/00
摘要： A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED).
摘要翻译：形成光转换元件的方法包括提供具有与第二光致发光元件一起外延生长的第一光致发光元件的半导体结构。第一区域在第一光致发光元件中从半导体结构的第一侧蚀刻，并且第二区域在第二光致发光元件中从半导体构造的第二侧被蚀刻。在一些实施例中，波长转换器附接到诸如发光二极管（LED）的电致发光元件。

5. 发明申请

WO2009075972A3 DOWN-CONVERTED LIGHT EMITTING DIODE WITH SIMPLIFIED LIGHT EXTRACTION 审中-公开
标题翻译：下转换发光二极管，具有简单的光提取
公开(公告)号：WO2009075972A3
公开(公告)日：2009-08-20
申请号：PCT/US2008082766
申请日：2008-11-07
申请人： 3M INNOVATIVE PROPERTIES CO , SMITH TERRY L , KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A
发明人： SMITH TERRY L , KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A
IPC分类号： H01L33/00 , H01L33/08 , H01L33/50
CPC分类号： H01L25/0756 , H01L24/32 , H01L33/0079 , H01L33/08 , H01L33/44 , H01L33/502 , H01L2924/0002 , H01L2924/10158 , H01L2924/12041 , H01L2924/00
摘要： A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features.
摘要翻译：波长转换发光二极管（LED）装置具有具有输出表面的LED。多层半导体波长转换器光学地结合到LED。至少一个LED和波长转换器具有光提取特征。

6. 发明申请

WO2009048704A2 LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
标题翻译：具有结合的半导体波长转换器的发光二极管
公开(公告)号：WO2009048704A2
公开(公告)日：2009-04-16
申请号：PCT/US2008075710
申请日：2008-09-09
申请人： 3M INNOVATIVE PROPERTIES CO , KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A , SMITH TERRY L
发明人： KELLEY TOMMIE W , HAASE MICHAEL A , LEATHERDALE CATHERINE A , SMITH TERRY L
IPC分类号： H01L33/00 , H01L33/02 , H01L33/22 , H01L33/50
CPC分类号： H01L33/22 , H01L25/0756 , H01L33/0079 , H01L33/02 , H01L33/502 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.
摘要翻译：发光二极管（LED）具有设置在基板上的各种LED层。能够将LED中产生的光的波长转换成更长波长的光的多层半导体波长转换器通过粘合层附着到LED的上表面。 LED内的一个或多个纹理表面用于提高光从LED传输到波长转换器的效率。在一些实施例中，波长转换器的一个或多个表面设置有纹理表面以增强转换器内产生的长波长光的提取效率。

7. 发明申请

WO2009085594A3 DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 审中-公开
标题翻译：具有均匀波长发射的下变换光源
公开(公告)号：WO2009085594A3
公开(公告)日：2009-09-11
申请号：PCT/US2008086060
申请日：2008-12-09
申请人： 3M INNOVATIVE PROPERTIES CO , SUN XIAOGUANG , HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
发明人： SUN XIAOGUANG , HAASE MICHAEL A , MILLER THOMAS J , SMITH TERRY L , KELLEY TOMMIE W , LEATHERDALE CATHERINE A
IPC分类号： H01L33/00 , H01L33/50
CPC分类号： H01L27/156 , H01L33/0079 , H01L33/505
摘要： An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.
摘要翻译：光源的布置附着到半导体波长转换器。每个光源以相应的峰值波长发光，并且光源的布置的特征在于峰值波长的第一范围。半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。峰值波长的第二范围比峰值波长的第一范围窄。半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

8. 发明申请

WO2011026005A3 PROJECTION AND DISPLAY SYSTEM 审中-公开
标题翻译：投影和显示系统
公开(公告)号：WO2011026005A3
公开(公告)日：2011-05-12
申请号：PCT/US2010047077
申请日：2010-08-30
申请人： 3M INNOVATIVE PROPERTIES CO , WILLETT STEVEN J , WOLK MARTIN B , SMITH TERRY L , AUERBACH ROY A , HAASE MICHAEL A , SAXE STEVEN G , KELLEY TOMMIE W
发明人： WILLETT STEVEN J , WOLK MARTIN B , SMITH TERRY L , AUERBACH ROY A , HAASE MICHAEL A , SAXE STEVEN G , KELLEY TOMMIE W
IPC分类号： G03B21/20 , G03B21/28 , G03B27/00
CPC分类号： G03B21/204 , H04N9/3129 , H04N9/3138
摘要： A projection system and a display that incorporates the projection system are provided. The projection system includes at least one electroluminescent device that emits a first wavelength of light, at least one semiconductor multilayer stack that downconverts the first wavelength of light to a second wavelength of light, and a scanning optical element that transmits the light along a scanned direction. The electroluminescent device can be part of an array of electroluminescent devices, and can be monolithic. The semiconductor multilayer stack can be part of an array of semiconductor multilayer stacks, and can also be monolithic. The scanning optical element can be positioned to scan the electroluminescent device across the semiconductor multilayer stack, or it can be positioned to scan the downconverted light after it has left the semiconductor multilayer stack.
摘要翻译：提供了投影系统和包括投影系统的显示器。投影系统包括发射第一波长的光的至少一个电致发光器件，将至少一个将第一波长的光变换为第二波长的光的半导体多层叠层，以及沿扫描方向透射光的扫描光学元件。电致发光器件可以是电致发光器件的阵列的一部分，并且可以是单片的。半导体多层堆叠可以是半导体多层堆叠的阵列的一部分，并且也可以是整体的。扫描光学元件可以定位成跨越半导体多层堆叠扫描电致发光器件，或者可以将扫描光学元件定位成在其离开半导体多层堆叠之后扫描下变换的光。

9. 发明专利

CA3111896A1 FILTER ASSEMBLY 未知
公开(公告)号：CA3111896A1
公开(公告)日：2020-03-12
申请号：CA3111896
申请日：2019-09-05
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： STOUGHTON HANNAH L , KELLEY TOMMIE W , SANTA CRUZ WINDY A , GORRELL MATTHEW W , STENDER JOHN B , MCCOOL CHRISTINE L , ELAM MICHAEL J , SCHUFFERT MICHAEL S , HEDDEN JACKSON H , TYNESKI FRANK , VERNON JOHN M
IPC分类号： B01D46/00 , B01D39/14
摘要： Filter assemblies are disclosed. In particular, filter assemblies including a filter media and an overlay portion covering the filter media are disclosed. Such filter assemblies may provide both acceptable filtering capacity and cleanable visible front surfaces.

10. 发明专利

DE60327597D1 未知
公开(公告)号：DE60327597D1
公开(公告)日：2009-06-25
申请号：DE60327597
申请日：2003-01-21
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： BAUDE PAUL F , FLEMING PATRICK R , HAASE MICHAEL A , KELLEY TOMMIE W , MUYRES DAWN V , THEISS STEVEN
IPC分类号： C23C14/04 , C23C14/24 , G03F1/20 , H01L21/02 , H01L21/336 , H01L21/363 , H01L29/786 , H01L51/05
摘要： The invention is directed to aperture mask deposition techniques for use in creating integrated circuits or integrated circuit elements. The techniques involve sequentially depositing material through a number of aperture masks formed with patterns that define layers or portions of various layers of a circuit, wherein the aperture masks have alignment edges that contact at least three contact points of an alignment fixture. In this manner, circuits can be created using aperture mask deposition techniques, without requiring any etching or photolithography, which is particularly useful when organic semiconductors are involved. The techniques can be useful in creating circuit elements for electronic displays, low-cost integrated circuits such as radio frequency identification (RFID) circuits, and other circuits.

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