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1. 发明专利

AU1943201A Acid functional fluoropolymer membranes and method of manufacture 未知
公开(公告)号：AU1943201A
公开(公告)日：2001-06-25
申请号：AU1943201
申请日：2000-12-04
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HAMROCK STEVEN J , JING NAIYONG , MAO SHANE S , HARDY L CHARLES
IPC分类号： C08F8/26 , C08F8/36 , C08J5/22 , C08L27/16 , C08L27/22 , H01B1/06 , H01B13/00 , H01M8/02 , H01M8/10 , C08F8/00
摘要： Methods are provided to make acid functional fluoropolymers by: a) dehydrofluorinating a starting fluoropolymer with a dehydrofluorinating agent to form an unsaturated fluoropolymer; b) adding an acidifiable nucleophilic functionalizing agent to a double bond of the unsaturated fluoropolymer; and c) acidifying the added acidifiable function. Acid functional fluoropolymers and ion conducting membranes thereof are also provided, including acid functional fluoropolymer having pendent groups according to the formula: -X-Ar-A n , wherein X is selected from O, S or NR, where R is selected from H and C1-C30 alkyl or aryl, which are optionally substituted, wherein Ar is a C6-C30 aromatic group, which is optionally substituted, wherein A is an acidic function or salt thereof, wherein a can be independently chosen to be 1, 2 or 3.

2. 发明专利

HK1043807A1 WORKING LIQUIDS AND METHODS FOR MODIFYING STRUCTURED WAFERS SUITED FOR SEMICONDUCTOR FABRICATION 未知
公开(公告)号：HK1043807A1
公开(公告)日：2002-09-27
申请号：HK02103812
申请日：2002-05-21
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HARDY L CHARLES , TRICE JENNIFER L
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , C09K , C09G , H01L
摘要： A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

3. 发明专利

BR9917199A 未知
公开(公告)号：BR9917199A
公开(公告)日：2002-01-08
申请号：BR9917199
申请日：1999-06-08
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HARDY L CHARLES , TRICE JENNIFER L
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321
摘要： A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

4. 发明专利

AU4336399A Working liquids and methods for modifying structured wafers suited for semiconductor fabrication 未知
公开(公告)号：AU4336399A
公开(公告)日：2000-09-28
申请号：AU4336399
申请日：1999-06-08
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HARDY L CHARLES , TRICE JENNIFER L
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321
摘要： A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

5. 发明专利

AU2002363056A8 Electrolytic processes with reduced cell voltage and gas formation 未知
公开(公告)号：AU2002363056A8
公开(公告)日：2005-11-17
申请号：AU2002363056
申请日：2002-07-22
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： SIERAKOWSKI MICHAEL J , TERRAZAS MICHAEL S , WADDELL JENNIFER E , HARDY L CHARLES , JOHNSON BRYAN J
IPC分类号： C25C1/00 , C25C1/12 , C25D3/38 , C25C7/06 , C25C1/16 , C25D1/04 , C25D3/22

6. 发明专利

AU2002363056A1 Electrolytic processes with reduced cell voltage and gas formation 未知
公开(公告)号：AU2002363056A1
公开(公告)日：2003-05-06
申请号：AU2002363056
申请日：2002-07-22
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： SIERAKOWSKI MICHAEL J , TERRAZAS MICHAEL S , WADDELL JENNIFER E , HARDY L CHARLES , JOHNSON BRYAN J
IPC分类号： C25C1/00 , C25C1/12 , C25D3/38

7. 发明专利

AT234906T 未知
公开(公告)号：AT234906T
公开(公告)日：2003-04-15
申请号：AT99973765
申请日：1999-06-08
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HARDY L CHARLES , TRICE JENNIFER L
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321
摘要： A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.

8. 发明专利

CA2393383A1 ACID FUNCTIONAL FLUOROPOLYMER MEMBRANES AND METHOD OF MANUFACTURE 未知
公开(公告)号：CA2393383A1
公开(公告)日：2001-06-21
申请号：CA2393383
申请日：2000-12-04
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： MAO SHANE S , JING NAIYONG , HARDY L CHARLES , HAMROCK STEVEN J
IPC分类号： C08F8/26 , C08F8/36 , C08J5/22 , C08L27/16 , C08L27/22 , H01B1/06 , H01B13/00 , H01M8/02 , H01M8/10 , C08F8/00
摘要： Methods are provided to make acid functional fluoropolymers by: a) dehydrofluorinating a starting fluoropolymer with a dehydrofluorinating agen t to form an unsaturated fluoropolymer; b) adding an acidifiable nucleophilic functionalizing agent to a double bond of the unsaturated fluoropolymer; and c) acidifying the added acidifiable function. Acid functional fluoropolymers and ion conducting membranes thereof are also provided, including acid functional fluoropolymer having pendent groups according to the formula: -X- Ar- An, wherein X is selected from O, S or NR, where R is selected from H and C1 - C30 alkyl or aryl, which are optionally substituted, wherein Ar is a C6-C30 aromatic group, which is optionally substituted, wherein A is an acidic function or salt thereof, wherein n can be independently chosen to be 1, 2 o r 3.

9. 发明申请

WO2009023387A3 COMPOSITIONS AND METHODS FOR MODIFYING A SURFACE SUITED FOR SEMICONDUCTOR FABRICATION 审中-公开
标题翻译：用于修改用于半导体制造的表面的组合物和方法
公开(公告)号：WO2009023387A3
公开(公告)日：2009-04-02
申请号：PCT/US2008069396
申请日：2008-07-08
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： HARDY L CHARLES , KRANZ HEATHER K , WOOD THOMAS E , KAISAKI DAVID A , GAGLIARDI JOHN J , CLARK JOHN C , SAVU PATRICIA M , CLARK PHILIP G
IPC分类号： H01L21/304
CPC分类号： H01L21/31053 , B24B37/044 , B24B37/245 , C09G1/02 , H01L21/3212
摘要： The disclosure pertains to compositions and methods for modifying or refining the surface of a wafer suited for semiconductor fabrication. The compositions include working liquids useful in modifying a surface of a wafer suited for fabrication of a semiconductor device. In some embodiments, the working liquids are aqueous solutions of initial components substantially free of loose abrasive particles, the components including water, a surfactant, and a pH buffer exhibiting at least one pKa greater than 7. In certain embodiments, the pH buffer includes a basic pH adjusting agent and an acidic complexing agent, and the working liquid exhibits a pH from about 7 to about 12. In further embodiments, the disclosure provides a fixed abrasive article comprising a surfactant suitable for modifying the surface of a wafer, and a method of making the fixed abrasive article. Additional embodiments describe methods that may be used to modify a wafer surface.
摘要翻译：本公开涉及用于改性或精制适于半导体制造的晶片表面的组合物和方法。组合物包括可用于改性适于制造半导体器件的晶片表面的工作液体。在一些实施方案中，工作液体是基本上不含松散磨料颗粒的初始组分的水溶液，组分包括水，表面活性剂和显示至少一个pKa大于7的pH缓冲液。在某些实施方案中，pH缓冲剂包括碱性pH调节剂和酸性络合剂，并且工作液体的pH为约7至约12.在另外的实施方案中，本公开提供了包含适于改性晶片表面的表面活性剂的固定磨料制品，以及方法制造固定的磨料制品。另外的实施例描述了可用于修改晶片表面的方法。

10. 发明申请

WO03035941A2 ELECTROLYTIC PROCESSES WITH REDUCED CELL VOLTAGE AND GAS FORMATION 审中-公开
标题翻译：具有降低电池电压和气体形成的电解工艺
公开(公告)号：WO03035941A2
公开(公告)日：2003-05-01
申请号：PCT/US0223052
申请日：2002-07-22
申请人： 3M INNOVATIVE PROPERTIES CO
发明人： SIERAKOWSKI MICHAEL J , HARDY L CHARLES , TERRAZAS MICHAEL S , WADDELL JENNIFER E , JOHNSON BRYAN J
IPC分类号： C25C1/00 , C25C1/12 , C25D3/38 , C25C7/06
CPC分类号： C25C1/00 , C25C1/12 , C25D3/38
摘要： Electrolytic solutions containing organic additive(s) selected from a described class of additives (e.g., 4,6-dihydroxypyrimidine) reduce overall applied electrical potential of electrolytic cells and/or reduce gas formation at the anode(s) or increase copper production rate. Benefits include reducing overall power consumption and reducing acid mist during electrolytic processes.
摘要翻译：含有选自上述添加剂（例如4,6-二羟基嘧啶）的有机添加剂的电解溶液降低了电解池的总施加电位和/或减少了阳极处的气体形成或增加了铜生产速率。优点包括在电解过程中降低总体功耗并减少酸雾。

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