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1. 发明申请

WO2013028802A1 FORMULATION FOR ACIDIC WET CHEMICAL ETCHING OF SILICON WAFERS 审中-公开
标题翻译：酸性水溶液硅酸盐化学蚀刻配方
公开(公告)号：WO2013028802A1
公开(公告)日：2013-02-28
申请号：PCT/US2012/051939
申请日：2012-08-22
申请人： 1366 TECHNOLOGIES INC , STERN, Eric , WEST, Bradley, M. , CRISCIONE, Jason
发明人： STERN, Eric , WEST, Bradley, M. , CRISCIONE, Jason
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L31/02366 , C09K13/08 , H01L31/02363 , Y02E10/50
摘要： Acid etch compositions for etching multicrystalline silicon substrates are disclosed which may include hydrofluoric acid, an oxidizer, an acid diluent, and soluble silicon. The soluble silicon may be hexafluorosilicic acid or ammonium fluorosilicate. Silicon substrates patterned with organic resist may be used with the acid etch compositions for selective silicon patterning for solar cell applications.
摘要翻译：公开了用于蚀刻多晶硅衬底的酸蚀组合物，其可以包括氢氟酸，氧化剂，酸稀释剂和可溶性硅。可溶性硅可以是六氟硅酸或氟硅酸铵。用有机抗蚀剂图案化的硅衬底可以与用于太阳能电池应用的选择性硅图案化的酸蚀组合物一起使用。

2. 发明申请

WO2013103930A2 METHODS TO SELECTIVELY TREAT PORTIONS OF A SURFACE USING A SELF-REGISTERING MASK 审中-公开
标题翻译：使用自注册掩模选择表面处理方法的方法
公开(公告)号：WO2013103930A2
公开(公告)日：2013-07-11
申请号：PCT/US2013/020435
申请日：2013-01-06
申请人： 1366 TECHNOLOGIES, INC.
发明人： TARASOV, Vladimir , ERSEN, Ali , STERN, Eric , CRISCIONE, Jason, M. , SACHS, Emanuel, M.
IPC分类号： H01L21/3063
CPC分类号： H01L31/02363 , H01L31/0248 , Y02E10/50
摘要： Processes increase light absorption into silicon wafers by selectively changing the reflective properties of the bottom portions of light trapping cavity features. Modification of light trapping features includes: deepening the bottom portion, increasing the curvature of the bottom portion, and roughening the bottom portion, all accomplished through etching. Modification may also be by the selective addition of material at the bottom of cavity features. Different types of features in the same wafers may be treated differently. Some may receive a treatment that improves light trapping while another is deliberately excluded from such treatment. Some may be deepened, some roughened, some both. No alignment is needed to achieve this selectively. The masking step achieves self-alignment to previously created light trapping features due to softening and deformation in place.
摘要翻译：通过选择性地改变光阱特征的底部的反射特性，工艺增加了对硅晶片的光吸收。光捕获特征的改进包括：深化底部部分，增加底部部分的曲率，以及粗糙化底部部分，全部通过蚀刻来实现。修改也可以通过在腔体特征的底部选择性地添加材料。不同类型的相同晶片中的特征可以被不同地对待。有些可能会接受改善光线捕获的治疗方法，而另一种方法被故意排除在这种治疗之外。有些可能会加深，有些粗糙，有的两个。不需要对准以选择性地实现。掩蔽步骤由于在现场的软化和变形而实现了先前产生的光捕获特征的自对准。

3. 发明公开

EP2748841A1 FORMULATION FOR ACIDIC WET CHEMICAL ETCHING OF SILICON WAFERS 审中-公开
标题翻译：公式的硅晶片的TREAT湿法化学蚀刻
公开(公告)号：EP2748841A1
公开(公告)日：2014-07-02
申请号：EP12825846.4
申请日：2012-08-22
申请人： 1366 Technologies Inc.
发明人： STERN, Eric , WEST, Bradley, M. , CRISCIONE, Jason
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L31/02366 , C09K13/08 , H01L31/02363 , Y02E10/50
摘要： Acid etch compositions for etching multicrystalline silicon substrates are disclosed which may include hydrofluoric acid, an oxidizer, an acid diluent, and soluble silicon. The soluble silicon may be hexafluorosilicic acid or ammonium fluorosilicate. Silicon substrates patterned with organic resist may be used with the acid etch compositions for selective silicon patterning for solar cell applications.

4. 发明申请

WO2011022655A1 METHODS FOR PATTERNING SUBSTRATES USING HETERODENEOUS STAMPS AND STENCILS AND METHODS OF MAKING THE STAMPS AND STENCILS 审中-公开
标题翻译：使用异位STAMPS和STENCIL对基质进行构图的方法及其制作方法
公开(公告)号：WO2011022655A1
公开(公告)日：2011-02-24
申请号：PCT/US2010/046176
申请日：2010-08-20
申请人： NANO TERRA INC. , MERCK PATENT GMBH , AGARWAL, Sandip , BLANCHET, Graciela, Beatriz , MAYERS, Brian, T. , MCLELLAN, Joseph, M. , REUST, Patrick , STERN, Eric , GILLIES, Jennifer , KUGLER, Ralf
发明人： AGARWAL, Sandip , BLANCHET, Graciela, Beatriz , MAYERS, Brian, T. , MCLELLAN, Joseph, M. , REUST, Patrick , STERN, Eric , GILLIES, Jennifer , KUGLER, Ralf
IPC分类号： B41L13/00 , B05C17/06
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F7/0388 , Y10T428/24331
摘要： The present invention is directed to heterogeneous stamp and stencil compositions methods for patterning substrates using contact printing processes employing the heterogeneous stamps and stencils, and products formed by the contact printing processes.
摘要翻译：本发明涉及使用采用异质印刷和模版的接触印刷方法以及通过接触印刷方法形成的产品来图案化基板的不均匀印模和模版组合物方法。

5. 发明申请

WO2011146912A2 STENCILS FOR HIGH-THROUGHPUT MICRON-SCALE ETCHING OF SUBSTRATES AND PROCESSES OF MAKING AND USING THE SAME 审中-公开
标题翻译：用于基板的高通量微尺寸蚀刻的步骤及其制造和使用方法
公开(公告)号：WO2011146912A2
公开(公告)日：2011-11-24
申请号：PCT/US2011/037478
申请日：2011-05-21
申请人： NANO TERRA INC. , MERCK PATENT GESELLSCHAFT MIT , STERN, Eric , BLANCHET, Graciela, Beatriz , HUNTING, Lindsay , MAYERS, Brian, T. , MCLELLAN, Joseph, M. , REUST, Patrick , KUGLER, Ralf , GILLES, Jennifer
发明人： STERN, Eric , BLANCHET, Graciela, Beatriz , HUNTING, Lindsay , MAYERS, Brian, T. , MCLELLAN, Joseph, M. , REUST, Patrick , KUGLER, Ralf , GILLES, Jennifer
IPC分类号： B44C1/16
CPC分类号： B44C1/227 , B41C1/148 , B41N1/24 , G03F7/027 , G03F7/12 , G03F7/16
摘要： The present invention is directed to stencils for high-throughput, high-resolution etching of substrates and processes of making and using the same.
摘要翻译：本发明涉及用于基板的高通量，高分辨率蚀刻和制造和使用它们的工艺的模板。

6. 发明申请

WO2008153552A1 SYSTEMS AND METHODS FOR CMOS-COMPATIBLE SILICON NANO-WIRE SENSORS WITH BIOCHEMICAL AND CELLULAR INTERFACES 审中-公开
标题翻译：具有生物化学和细胞界面的CMOS兼容硅纳米线传感器的系统和方法
公开(公告)号：WO2008153552A1
公开(公告)日：2008-12-18
申请号：PCT/US2007/024958
申请日：2007-12-06
申请人： YALE UNIVERSITY , STERN, Eric , KLEMIC, James, F. , ROUTENBERG, David, A. , WYREMBAK, Pauline, N. , TURNER-EVANS, Daniel , HAMILTON, Andrew, D. , LAVAN, David, A. , FAHMY, Tarek , REED, Mark, A.
发明人： STERN, Eric , KLEMIC, James, F. , ROUTENBERG, David, A. , WYREMBAK, Pauline, N. , TURNER-EVANS, Daniel , HAMILTON, Andrew, D. , LAVAN, David, A. , FAHMY, Tarek , REED, Mark, A.
IPC分类号： H01L29/00
CPC分类号： H01L29/0665 , B82Y10/00 , G01N27/4146 , H01L29/045 , H01L29/0673 , H01L29/16
摘要： The systems and methods described herein include a sensor for suitable for sensing chemical and biological substances. The sensor comprises a semiconductor layer formed in or on a substrate and a channel having nano-scale dimensions formed in the semiconductor layer, where the structure creates an electrically conducting pathway between a first contact and a second contact on the semiconductor layer. In certain preferred embodiments, the nano-scale channel has a trapezoidal cross-section with an effective width and exposed lateral faces, where the effective width is selected to have same order of magnitude as a Debye length (LD) of the semiconductor material of which the semiconductor layer is formed.
摘要翻译：本文所述的系统和方法包括适于感测化学和生物物质的传感器。传感器包括形成在衬底中或衬底上的半导体层和形成在半导体层中的具有纳米级尺寸的沟道，其中该结构在半导体层上的第一接触和第二接触之间形成导电通路。在某些优选实施例中，纳米尺度通道具有具有有效宽度和暴露侧面的梯形横截面，其中有效宽度被选择为具有与其半导体材料的德拜长度（LD）相同的数量级形成半导体层。

7. 发明申请

WO2011157335A1 CROSS-LINKING AND MULTI-PHASE ETCH PASTES FOR HIGH RESOLUTION FEATURE PATTERNING 审中-公开
标题翻译：用于高分辨率特征的交叉连接和多相蚀刻膏
公开(公告)号：WO2011157335A1
公开(公告)日：2011-12-22
申请号：PCT/EP2011/002427
申请日：2011-05-17
申请人： MERCK PATENT GMBH , NANO-TERRA, INC. , GILLIES, Jennifer , KUEGLER, Ralf , STERN, Eric , MAYERS, Brian , REUST, Patrick , HUNTING, Lindsay
发明人： GILLIES, Jennifer , KUEGLER, Ralf , STERN, Eric , MAYERS, Brian , REUST, Patrick , HUNTING, Lindsay
IPC分类号： C09K13/04 , C09K13/00
CPC分类号： C09K13/06 , B82Y30/00 , C09K13/00 , C09K13/04 , Y10S977/773
摘要： The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and silicon surfaces and which allow to prepare smaller features.
摘要翻译：本发明涉及一种具有非牛顿流动特性的可印刷均质蚀刻膏形式的新型蚀刻介质，用于改进对无机氧化物和硅表面的蚀刻，并允许制备更小的特征。

8. 发明申请

WO2011075694A1 APPARATUS AND METHODS FOR TREATING FLUIDS USING ULTRAVIOLET LIGHT 审中-公开
标题翻译：使用紫外光处理流体的装置和方法
公开(公告)号：WO2011075694A1
公开(公告)日：2011-06-23
申请号：PCT/US2010/061138
申请日：2010-12-17
申请人： NANO TERRA INC. , STERN, Eric , BLANCHET, Graciela, B. , CHEN, Shih-Chi , MENZI, Werner , SOKOLIK, Igor , AVERBECK, David, J. , BURBAN, John, Henry , ROLCHIGO, Phil , TCHAVDAROV, Boyko
发明人： STERN, Eric , BLANCHET, Graciela, B. , CHEN, Shih-Chi , MENZI, Werner , SOKOLIK, Igor , AVERBECK, David, J. , BURBAN, John, Henry , ROLCHIGO, Phil , TCHAVDAROV, Boyko
IPC分类号： G01N21/01
CPC分类号： C02F1/325 , C02F2103/001 , C02F2201/3227 , C02F2201/3228 , C02F2201/324 , C02F2201/328 , C02F2303/04 , H01J61/72
摘要： The present invention is directed to apparatuses and methods for treating fluids with ultraviolet light, including fluid streams, utilizing elliptical chambers. Suitably, water or other fluids can be disinfected using the chambers. Methods for optimizing irradiation of the fluid in the apparatuses are also provided.
摘要翻译：本发明涉及利用紫外线处理流体的装置和方法，包括利用椭圆室的流体流。适当地，水或其他流体可以使用室进行消毒。还提供了用于优化设备中的流体照射的方法。

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