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1. 发明公开

KR1020080080953A 반도체 장치 및 그 제조 방법 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：KR1020080080953A
公开(公告)日：2008-09-05
申请号：KR1020080019380
申请日：2008-02-29
申请人： 후지쯔 세미컨덕터 가부시키가이샤
发明人： 사꾸마다까시
IPC分类号： H01L21/265
CPC分类号： H01L21/823412 , H01L21/3145
摘要： A semiconductor device is provided to stably form a pocket region by avoiding a shadowing phenomenon caused by a photoresist layer. On a semiconductor substrate(10) having a first region and a second region adjacent to the first region, an isolation layer(12) is formed in the boundary between the first and second regions wherein the isolation layer delimits a first active region in the first region and a second active region in the second region. A gate electrode(20) is formed on the first active region by interposing a gate insulation layer(18). A first photoresist layer is formed on the substrate having the gate electrode, having an opening that covers the second region and exposes the first active region wherein the edge portion of the opening in the boundary is positioned in the second active region rather than in the center of the isolation layer. By using the first photoresist layer and the gate electrode as a mask, an ion implantation process is slantingly performed with respect to the normal direction of the substrate to form a pair of pocket regions(24) in the semiconductor substrate at both sides of the gate electrode.
摘要翻译：提供半导体器件以通过避免由光致抗蚀剂层引起的阴影现象来稳定地形成袋区域。在具有与第一区域相邻的第一区域和第二区域的半导体衬底（10）上，在第一和第二区域之间的边界中形成隔离层（12），其中隔离层限定第一区域中的第一有源区域区域和第二区域中的第二活性区域。通过插入栅绝缘层（18）在第一有源区上形成栅电极（20）。在具有栅电极的基板上形成第一光致抗蚀剂层，具有覆盖第二区域的开口，并露出第一有源区域，其中边界中的开口的边缘部分位于第二有源区域而不是中心的隔离层。通过使用第一光致抗蚀剂层和栅电极作为掩模，相对于衬底的法线方向倾斜地执行离子注入工艺，以在栅极两侧的半导体衬底中形成一对凹穴区域（24）电极。

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