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1. 发明授权

KR102107476B1 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법 有权
公开(公告)号：KR102107476B1
公开(公告)日：2020-05-07
申请号：KR1020130039519
申请日：2013-04-10
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태 , 김진홍
IPC分类号： C23F1/18

2. 发明公开

KR1020120027685A 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법 无效
标题翻译：光刻胶组合物及其制作方法
公开(公告)号：KR1020120027685A
公开(公告)日：2012-03-22
申请号：KR1020100089422
申请日：2010-09-13
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태
IPC分类号： G03F7/022 , G03F7/008 , H01L21/027
CPC分类号： G03F7/0226 , G03F7/0048 , G03F7/0236 , G03F7/40 , G03F7/0223 , G03F7/0085 , G03F7/0125 , H01L21/0273
摘要： PURPOSE: A photoresist composition and a method for forming patterns using the same are provided to improve yield and to reduce failure rate by preventing organic materials from being remaining on a substrate. CONSTITUTION: A photoresist composition includes 60-90 weight% of novolac resin, diazide-based compound, an organic solvent, and a rust preventive agent(310). The novolac resin includes phenol-based compound. The novolac resin is obtained by reacting the phenol-based compound with aldehyde-based compound or ketone-based compound. The diazide-based compound includes one or more of photo-sensitive agents and phenol-based compound. The phenol-based compound is bonded with a photo-sensitive agent. The rust preventive agent includes one or more of heterocyclic compound with a carbonyl group, glycol-based compound with triple bond, alkyl sarcosine metal salt compound, aromatic carbonic acid anhydride compound, and thiazole and triazole-based compound.
摘要翻译：目的：提供光致抗蚀剂组合物和使用其形成图案的方法，以通过防止有机材料残留在基底上来提高产量并降低破坏率。构成：光致抗蚀剂组合物包含60-90重量％的酚醛清漆树脂，二叠氮基化合物，有机溶剂和防锈剂（310）。酚醛清漆树脂包括苯酚类化合物。酚醛清漆树脂通过使酚类化合物与醛类化合物或酮系化合物反应而得到。二叠氮基化合物包括一种或多种光敏剂和酚类化合物。苯酚类化合物与光敏剂结合。防锈剂包括一种或多种具有羰基的杂环化合物，具有三键的二醇类化合物，烷基肌氨酸金属盐化合物，芳族碳酸酐化合物，噻唑和三唑类化合物。

3. 发明公开

KR1020120120588A ＵＶ 조사를 이용한 미세 패턴 형성방법 审中-实审
标题翻译：通过使用超紫外线照射形成精细图案的方法
公开(公告)号：KR1020120120588A
公开(公告)日：2012-11-02
申请号：KR1020110038264
申请日：2011-04-25
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태
IPC分类号： H05K3/06 , H05K3/46
摘要： PURPOSE: A method for forming a fine pattern by UV radiation is provided to minimize an undercut phenomenon in an etching process by radiating the upper side of a photoresist pattern with UV to protect the upper side of an etched layer. CONSTITUTION: An etched layer is formed on a substrate(110). A photoresist layer(130) is coated on the upper side of the etched layer. A lithography is performed on the etched layer. A first etching process is performed on the etched layer. A thin film made of antirust coating materials is formed on the upper side of the etched layer. The upper side of a photoresist pattern is radiated with UV. The thin film is removed and a second etching process is performed on the etched layer.
摘要翻译：目的：提供通过UV辐射形成精细图案的方法，以通过用UV辐射光致抗蚀剂图案的上侧以保护蚀刻层的上侧来最小化蚀刻工艺中的底切现象。构成：在衬底（110）上形成蚀刻层。在蚀刻层的上侧涂覆有光致抗蚀剂层（130）。在蚀刻层上进行光刻。在蚀刻层上进行第一蚀刻工艺。在蚀刻层的上侧形成由防锈涂层材料制成的薄膜。光致抗蚀剂图案的上侧用UV辐射。去除薄膜并对蚀刻层进行第二蚀刻工艺。

4. 发明公开

KR1020140122614A 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법 审中-实审
标题翻译：含铜金属膜的蚀刻组合物及其相同的蚀刻方法
公开(公告)号：KR1020140122614A
公开(公告)日：2014-10-20
申请号：KR1020130039519
申请日：2013-04-10
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태 , 김진홍
IPC分类号： C23F1/18 , C09K13/00
CPC分类号： C23F1/18
摘要： Disclosed in the present invention is an etching composite for a copper containing metal film, which comprises: an amine derivative which is indicated as the below chemical formula 1; a fluorine containing compound which is indicated as one between the below chemical formula 2 and the below chemical formula 3; a second copper ion; and a mineral acid. In addition, disclosed in the present invention is also an etching method for a copper containing metal film, which includes a step of etching a copper containing metal film using the etching composite for a copper containing metal film.
摘要翻译：本发明公开了一种含铜金属膜用蚀刻复合体，其含有下述化学式1表示的胺衍生物，在下述化学式2和下述化学式3之间表示的含氟化合物; 第二铜离子; 和无机酸。此外，本发明中还公开了一种含铜金属膜的蚀刻方法，该方法包括使用含铜金属膜的蚀刻复合物来蚀刻含铜金属膜的步骤。

5. 发明公开

KR1020130028249A 다단 에칭을 이용한 미세 패턴 형성방법 审中-实审
标题翻译：使用多次蚀刻形成精细图案的方法
公开(公告)号：KR1020130028249A
公开(公告)日：2013-03-19
申请号：KR1020110091654
申请日：2011-09-09
申请人： 해성디에스 주식회사
发明人： 김기수 , 유동국 , 임현태
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F1/80
摘要： PURPOSE: A method for forming a fine pattern using multiple etching is provided to remove defects due to organic and inorganic materials of an etching solution in advance before an etching process is completed. CONSTITUTION: A first etching process is performed on a layer(S100). The first etching solution includes an organic and an inorganic additive. The layer is washed(S110). A second etching process is performed on the layer(S120). An organic and an inorganic additive are not used in the second etching process. [Reference numerals] (S100) First etching; (S110) Washing; (S120) Second etching
摘要翻译：目的：提供一种使用多次蚀刻形成精细图案的方法，以在蚀刻处理完成之前预先除去由蚀刻溶液的有机和无机材料引起的缺陷。构成：对层进行第一蚀刻处理（S100）。第一蚀刻溶液包括有机和无机添加剂。洗涤层（S110）。在层上执行第二蚀刻处理（S120）。在第二蚀刻工艺中不使用有机和无机添加剂。（附图标记）（S100）第一蚀刻; （S110）洗涤; （S120）第二蚀刻

6. 发明公开

KR1020140121196A 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법 审中-实审
标题翻译：含铜金属膜的蚀刻组合物及其相同的蚀刻方法
公开(公告)号：KR1020140121196A
公开(公告)日：2014-10-15
申请号：KR1020130037661
申请日：2013-04-05
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태 , 김진홍
IPC分类号： C23F1/18 , C09K13/00
CPC分类号： C23F1/18
摘要： 0.15 내지 0.25 중량%의 제2 구리 이온; 0.0001 내지 0.10 중량%의 글리콜 에테르 화합물; 0.03 내지 0.10 중량%의 무기산; 0.0002 내지 0.04 중량%의 계면활성제; 및 전체 조성물 총 중량이 100 중량%가 되도록 하는 물을 포함하는 구리 함유 금속막 식각액 조성물을 개시한다.
또한, 상기 구리 함유 금속막 식각액 조성물을 사용하여 구리 함유 금속막을 식각하는 단계를 포함하는 구리 함유 금속막 식각 방법을 개시한다.
摘要翻译：公开了一种含铜金属膜的蚀刻剂组合物，其包含0.15-0.25重量％的第二铜离子，0.0001-0.10重量％的二醇醚化合物，0.03-0.10重量％的无机酸，0.0002-0.04重量％的表面活性剂，剩余的水相对于整个组合物的100重量％。此外，公开了一种蚀刻含铜金属膜的方法，包括使用含铜金属膜用蚀刻剂组合物蚀刻含铜金属膜的步骤。

7. 发明授权

KR101859126B1 ＵＶ 조사를 이용한 미세 패턴 형성방법 有权
标题翻译：使用UV照射形成精细图案的方法
公开(公告)号：KR101859126B1
公开(公告)日：2018-05-17
申请号：KR1020110038264
申请日：2011-04-25
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태
IPC分类号： H05K3/06 , H05K3/46
摘要： 본발명은기판의미세패턴형성방법에관한것으로, (a) 기판에피식각층을형성하는단계; (b) 상기피식각층상부에포토레지스트층을코팅하는단계; (c) 상기포토레지스트층이코팅된피식각층에리소그라피를수행하는단계; (d) 상기리소그라피에의해생성된포토레지스트패턴을포함하는피식각층에제1 에칭을수행하는단계; (e) 상기포토레지스트패턴을포함하는피식각층의상부에방청코팅물로박막을형성하는단계; (f) 상기포토레지스트패턴상부에 UV 조사를수행하는단계; (g) 상기박막을제거하는단계; 및 (h) 상기포토레지스트패턴을포함하는피식각층에제2 에칭을수행하는단계;를포함하는것을특징으로하는 UV 조사를이용한미세패턴형성방법을제공하여, 포토레지스트패턴상부에 UV 조사를수행하여피식각층상부를보호함으로써에칭시언더컷현상을최소화할수 있고, 방청코팅물로수용성방청코팅물을이용하여유기물사용에따른불량및 수율문제를극복할수 있는미세패턴형성방법을제공할수 있다.

8. 发明授权

KR101674538B1 금속 패턴 형성 방법 有权
标题翻译：形成金属图案的方法
公开(公告)号：KR101674538B1
公开(公告)日：2016-11-09
申请号：KR1020110026461
申请日：2011-03-24
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태
IPC分类号： H01L21/027
摘要： 본발명은베이스부재, 상기베이스부재상에금속을함유하는피에칭재및 상기피에칭재상에포토레지스트가형성된적층체를준비하는단계, 상기피에칭재의소정의영역을노출하도록상기포토레지스트의소정의영역을제거하여포토레지스트패턴을형성하는단계, 상기노출된피에칭재의영역에대하여예비에칭공정을진행하는단계, 적어도상기피에칭재의예비에칭이진행된영역및 상기포토레지스트의노출된면 중상기피에칭재를향하는방향의면에예비막을형성하는단계, 상기예비막에대하여수세공정을진행하는단계및 상기예비에칭공정을진행한상기피에칭재에대하여본 에칭공정을진행하여상기포토레지스트패턴에대응되도록상기피에칭재를패터닝하는단계를포함하는금속패턴형성방법을제공한다.

9. 发明公开

KR1020120109059A 금속 패턴 형성 방법 有权
标题翻译：形成金属图案的方法
公开(公告)号：KR1020120109059A
公开(公告)日：2012-10-08
申请号：KR1020110026461
申请日：2011-03-24
申请人： 해성디에스 주식회사
发明人： 유동국 , 김기수 , 임현태
IPC分类号： H01L21/027
CPC分类号： H01L21/0274 , G03F1/80
摘要： PURPOSE: A method for forming a metal pattern is provided to form a minute pattern of an object material using a simple process without adding etchant by forming an auxiliary film performing an etching barrier function in an etching process. CONSTITUTION: A stacked body is prepared. The stacked body includes a base member(101), an object material(110) and photoresist. A photoresist pattern(121) is formed by removing a predetermined area of the photoresist. A photoresist penetration unit(122) is formed around the photoresist pattern. An auxiliary film(130) is formed on the surface of the photoresist pattern and the exposed object material.
摘要翻译：目的：提供一种用于形成金属图案的方法，以通过在蚀刻工艺中形成执行蚀刻阻挡功能的辅助膜而不添加蚀刻剂的简单工艺形成目标材料的微小图案。构成：准备堆叠的身体。层叠体包括基底构件（101），物体材料（110）和光致抗蚀剂。通过去除光致抗蚀剂的预定区域来形成光致抗蚀剂图案（121）。在光致抗蚀剂图案周围形成光致抗蚀剂穿透单元（122）。在光致抗蚀剂图案的表面和暴露的目标材料上形成辅助膜（130）。

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