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3. 发明授权

KR1019920002092B1 매립형 쇼트키 전극을 이용한 고속 수광소자 失效
标题翻译：使用BURIED SHOTTKY电极的高速摄像器件
公开(公告)号：KR1019920002092B1
公开(公告)日：1992-03-10
申请号：KR1019880015427
申请日：1988-11-23
申请人： 한국과학기술원
发明人： 권영세 , 정기웅 , 김상배
IPC分类号： H01L31/08
摘要： The device includes a source (17) and a drain (18). A W electrode gate (19) is formed within a GaAs crystalline layer (21), and an SiO2 oxide layer (20) is formed upon a GaAs substrate (1) and on the opposite sides of the GaAs crystalline layer (21). An AuGe/Ni layer (15) is deposited on the GaAs crystalline layer (21) for realizing an n type contact. When the resistance between the source and the drain is varied due to a light absorption by applying a voltage there, the positive holes which are formed by applying a reverse voltage are pulled through the W electrode, thereby improving the recovery time characteristics of the device.
摘要翻译：该装置包括源（17）和排水（18）。在GaAs结晶层（21）内形成W电极栅极（19），在GaAs衬底（1）和GaAs晶体层（21）的相对侧上形成SiO 2氧化物层（20）。在GaAs晶体层（21）上沉积AuGe / Ni层（15），以实现n型接触。当源极和漏极之间的电阻由于通过在其上施加电压的光吸收而变化时，通过施加反向电压形成的正空穴被拉过W电极，从而提高了器件的恢复时间特性。

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