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1. 发明公开

KR1020050029553A 전기 도금용 첨가제를 이용한 무전해 도금 방법 失效
标题翻译：使用添加剂进行电镀的电镀方法
公开(公告)号：KR1020050029553A
公开(公告)日：2005-03-28
申请号：KR1020030065877
申请日：2003-09-23
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 이상철 , 이창화 , 차승환
IPC分类号： C23C18/54
CPC分类号： C23C18/1651 , C23C18/405 , C23C18/44
摘要： To provide an electroless plating method using additives for electroplating, the method for enabling additives effectively used in electroplating process to obtain an equal effect also in electroless plating process. The electroless plating method using additives for electroplating comprises: a step(a) of primarily electroless plating the treating object by dipping a treating object into an electroless plating solution for a concealment period, wherein the electroless plating solution does not contain additives; and a step(b) of secondly electroless plating the treating object by dipping the electroless plated treating object into an electroless plating solution containing the additives, wherein the additives are additives used in electroplating that are selected from the group consisting of an accelerating agent, an inhibitor and a stabilizer, wherein the electroless plating solution a copper plating solution containing copper ions or a silver plating solution containing silver ions, and wherein the method comprises a step(a) of primarily electroless plating copper on the treating object by dipping a treating object into an electroless copper plating solution comprising 5 to 8 g/L of copper sulfate, 2 to 3.5 g/L of formaldehyde, 14 to 18 g/L of ethylenediamine tetra acetic acid and 20 to 35 g/L of potassium hydroxide for a concealment period; and a step(b) of secondly electroless plating copper on the electroless copper plated treating object by dipping the electroless copper plated treating object into an electroless copper plating solution containing SPS(4,5-dithiaoctane-1,8-disulfonic acid) or MPSA(3-mercapto-1-propanesulfonate) in the electroless copper plating solution of the step(a).
摘要翻译：为了提供使用用于电镀的添加剂的无电镀方法，可以在电镀工艺中有效使用添加剂的方法在化学镀处理中获得相同的效果。使用电镀用添加剂的化学镀方法包括：通过将处理物浸渍到化学镀溶液中进行隐蔽处理，主要通过将处理物进行无电镀处理的步骤（a），其中化学镀溶液不含添加剂; 以及步骤（b），其通过将无电镀处理物浸渍到含有添加剂的无电解镀液中来对处理对象进行第二次无电镀处理，其中所述添加剂是电镀中使用的添加剂，其选自加速剂，抑制剂和稳定剂，其中所述化学镀溶液是含有铜离子的镀铜溶液或含有银离子的镀银溶液，并且其中所述方法包括通过浸渍处理对象在处理对象上主要无电镀铜的步骤（a）成为含有5〜8g / L的硫酸铜，2〜3.5g / L的甲醛，14〜18g / L的乙二胺四乙酸和20〜35g / L氢氧化钾的化学镀铜液，用于隐蔽期; 以及通过将无电镀铜处理物浸渍到含有SPS（4,5-二硫辛烷-1,8-二磺酸）或MPSA的无电镀铜溶液中的无电镀铜处理物上的第二次无电镀铜的步骤（b）（3-巯基-1-丙磺酸盐）在步骤（a）的无电镀铜溶液中。

2. 发明公开

KR1020040080464A 은 무전해 도금을 위한 표면 활성화 방법 失效
标题翻译：用于银电镀的表面活化方法获得薄膜
公开(公告)号：KR1020040080464A
公开(公告)日：2004-09-20
申请号：KR1020030015226
申请日：2003-03-11
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 차승환
IPC分类号： C23C18/42
CPC分类号： C23C18/1879 , C23C18/44
摘要： PURPOSE: A surface activation method for silver electroless plating is provided to obtain a thin silver film used for wiring or seed layer for silver electroless plating by activating the surface of a plating object using gold (Au) as a catalyst, thereby preventing agglomeration of silver to be deposited on the surface of the plating object. CONSTITUTION: In a method for activating the surface of a plating object using a catalyst before performing silver (Ag) electroless plating, the surface activation method for silver electroless plating is characterized in that gold (Au) is used as the catalyst, wherein the surface of the plating object is reacted with a gold activation solution comprising 0.01 to 0.5 g/L of gold chloride and 0.1 to 10 ml/L of hydrofluoric acid in order to use gold as the catalyst.
摘要翻译：目的：提供一种银化学镀的表面活化方法，以金（Au）作为催化剂使电镀物体的表面活化，从而防止银的聚集，从而获得用于银化学镀的布线或种子层的薄银膜沉积在电镀物体的表面上。构成：在进行银（Ag）无电解电镀之前，使用催化剂活化镀覆物的表面的方法中，银化学镀的表面活化法的特征在于，使用金（Au）作为催化剂，其中表面的镀液与含有0.01〜0.5g / L氯化金和0.1〜10ml / L氢氟酸的金活化溶液反应，以使用金作为催化剂。

3. 发明公开

KR1020040080463A 전해도금에 의한 고비저항 기판에서의 금속박막 형성방법 失效
标题翻译：使用电镀方法在高电阻率基板上形成金属薄膜的方法
公开(公告)号：KR1020040080463A
公开(公告)日：2004-09-20
申请号：KR1020030015225
申请日：2003-03-11
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 권오중 , 차승환
IPC分类号： H01L21/288
摘要： PURPOSE: A method for forming a metallic thin film on a high resistivity substrate using an electroplating method is provided to form easily a metallic thin film on the high resistivity substrate by using a surface activation method. CONSTITUTION: A preprocessing procedure is performed. The preprocessing procedure includes an etching process for removing oxides from a high resistivity substrate by using an etching solution and a surface activation process for activating a surface of the high resistivity substrate by using a metal activation solution. A metallic thin film is formed on an upper surface of the surface-activated substrate by using an electroplating solution. The etching solution is formed with HF solution.
摘要翻译：目的：提供一种使用电镀方法在高电阻率基板上形成金属薄膜的方法，通过使用表面活化方法容易地在高电阻率基板上形成金属薄膜。构成：执行预处理程序。预处理方法包括通过使用蚀刻溶液从高电阻率基板去除氧化物的蚀刻工艺和通过使用金属活化溶液来激活高电阻率基板的表面的表面活化方法。通过使用电镀液在表面活化基板的上表面上形成金属薄膜。蚀刻溶液由HF溶液形成。

4. 发明授权

KR100535977B1 전기 도금용 첨가제를 이용한 무전해 도금 방법 失效
标题翻译：使用电镀添加剂的化学镀方法
公开(公告)号：KR100535977B1
公开(公告)日：2005-12-09
申请号：KR1020030065877
申请日：2003-09-23
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 이상철 , 이창화 , 차승환
IPC分类号： C23C18/54
摘要： 본 발명은 전기 도금용 첨가제를 이용한 무전해 도금 방법에 관한 것으로, 피처리물을 첨가제가 함유되지 않은 무전해 도금 용액에 잠복기 동안 침지하여 1차 무전해 도금시킨 후 무전해 도금시킨 피처리물을 첨가제가 함유된 무전해 도금 용액에 침지하여 2차 무전해 도금시킴으로써 첨가제의 효과를 극대화 할 수 있는 무전해 도금 방법을 제공하는 효과가 있다.

5. 发明授权

KR100509865B1 은 무전해 도금을 위한 표면 활성화 방법 失效
标题翻译：银化学镀表面激活方法
公开(公告)号：KR100509865B1
公开(公告)日：2005-08-22
申请号：KR1020030015226
申请日：2003-03-11
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 차승환
IPC分类号： C23C18/42
摘要： 본 발명은 은 무전해 도금(Ag electroless plating)을 위한 표면 활성화 방법에 관한 것으로서, 은 무전해 도금 전에 피도금재의 표면을 촉매로서 활성화시키는 방법에 있어서, 상기 촉매로서 금(Au)을 사용하는 것을 특징으로 하며, 이에 따라 접합성, 저항 측면 등에서 우수한 도금 특성을 나타내고, 박막의 배선용으로 사용시 신뢰도를 향상시키는 현저한 효과가 달성되게 된다.

6. 发明授权

KR100495648B1 전해도금에 의한 고비저항 기판에서의 금속박막 형성방법 失效
标题翻译：通过电镀在高电阻基板上形成金属薄膜的方法
公开(公告)号：KR100495648B1
公开(公告)日：2005-06-16
申请号：KR1020030015225
申请日：2003-03-11
申请人： 주식회사 엘지화학 , 재단법인서울대학교산학협력재단
发明人： 김재정 , 권오중 , 차승환
IPC分类号： H01L21/288
摘要： 본 발명은 고비저항 기판에서 전해도금에 의하여 금속박막을 형성하는 방법에 관한 것으로, 고비저항 기판을 금속활성화 용액으로 성장핵을 미리 생성시키는 표면활성화 후 전해도금용액을 이용하여 금속 박막을 형성시킴으로서 비저항이 높은 기판 위에 연속적인 박막을 형성하여 미세화되어 가는 반도체 소자에 적극 활용할 수 있다.

7. 发明授权

KR100454633B1 기판 표면 처리 방법 有权
标题翻译： 기판표면처리방법
公开(公告)号：KR100454633B1
公开(公告)日：2004-11-05
申请号：KR1020020000491
申请日：2002-01-04
申请人： 재단법인서울대학교산학협력재단
发明人： 김재정 , 차승환
IPC分类号： H01L21/288
摘要： PURPOSE: A method for processing the surface of a substrate is provided to be capable of activating the surface of the substrate, reducing surface resistance, and improving the uniformity of an electroless plating layer. CONSTITUTION: A semiconductor substrate is prepared. A native oxide layer formed on the surface of the semiconductor substrate, is etched and cleaned. The surface of the semiconductor substrate is activated by immersing the cleaned semiconductor substrate into an activating solution. At this time, the activating solution is made of a catalyst for oxidizing a reducing agent, an activating agent for activating the surface of the semiconductor substrate, and a complexing agent for forming metal ion and ligand of the catalyst. Preferably, the metal ion of the catalyst is made of palladium, silver, gold, copper, or platinum.
摘要翻译：目的：提供一种用于处理基板表面的方法，其能够激活基板的表面，降低表面电阻并提高化学镀层的均匀性。构成：准备半导体衬底。形成在半导体衬底表面上的自然氧化层被蚀刻并清洁。通过将清洁的半导体衬底浸入活化溶液中来激活半导体衬底的表面。此时，活化溶液由用于氧化还原剂的催化剂，用于激活半导体衬底表面的活化剂和用于形成催化剂的金属离子和配体的络合剂构成。优选地，催化剂的金属离子由钯，银，金，铜或铂制成。

8. 发明公开

KR1020030059743A 기판 표면 처리 방법 有权
标题翻译：用于处理衬底表面的方法
公开(公告)号：KR1020030059743A
公开(公告)日：2003-07-10
申请号：KR1020020000491
申请日：2002-01-04
申请人： 재단법인서울대학교산학협력재단
发明人： 김재정 , 차승환
IPC分类号： H01L21/288
摘要： PURPOSE: A method for processing the surface of a substrate is provided to be capable of activating the surface of the substrate, reducing surface resistance, and improving the uniformity of an electroless plating layer. CONSTITUTION: A semiconductor substrate is prepared. A native oxide layer formed on the surface of the semiconductor substrate, is etched and cleaned. The surface of the semiconductor substrate is activated by immersing the cleaned semiconductor substrate into an activating solution. At this time, the activating solution is made of a catalyst for oxidizing a reducing agent, an activating agent for activating the surface of the semiconductor substrate, and a complexing agent for forming metal ion and ligand of the catalyst. Preferably, the metal ion of the catalyst is made of palladium, silver, gold, copper, or platinum.
摘要翻译：目的：提供一种处理基板表面的方法，以能够激活基板的表面，降低表面电阻，并提高化学镀层的均匀性。构成：制备半导体衬底。形成在半导体衬底的表面上的自然氧化物层被蚀刻和清洁。半导体衬底的表面通过将清洁的半导体衬底浸入激活溶液而被激活。此时，活化溶液由用于氧化还原剂的催化剂，用于活化半导体衬底的表面的活化剂和用于形成催化剂的金属离子和配体的络合剂制成。优选地，催化剂的金属离子由钯，银，金，铜或铂制成。

9. 发明授权

KR100475403B1 반도체 배선용 구리 박막 형성방법 有权
标题翻译：半导体互连铜膜的制造方法
公开(公告)号：KR100475403B1
公开(公告)日：2005-03-15
申请号：KR1020020029543
申请日：2002-05-28
申请人： 재단법인서울대학교산학협력재단
发明人： 김재정 , 차승환
IPC分类号： C23C18/54
摘要： 본 발명의 반도체 배선용 구리 박막 형성방법은: 구리염과, 착화제와, 환원제, 및 pH 조절제를 포함하는 구리 무전해 도금액에 피도금체를 침지하여 상기 피도금체 표면에 무전해 도금을 실시하는 데 있어서, 일예로서, 상기 환원제로서 포름알데히드를 이용하고, 구리 무전해 도금액의 온도를 30℃∼70℃으로 하여 무전해 도금을 실시하고, 다른 예로서, 환원제로서 포름알데히드를 이용하며, 구리 무전해 도금액의 온도를 30℃∼70℃으로 하여 실시한 다음에, 구리 무전해 도금액의 온도를 15℃∼28℃로 하여 무전해 도금을 실시하는 것을 특징으로 한다. 본 발명에 의하면, 구리 무전해 도금액의 온도를 일정시간 동안 상승시켜 구리 박막의 내부에 구리 산화물이 존재하지 않고, 구리 박막의 비저항은 낮으며, 접합성도 뛰어난 반도체 배선용 구리 박막을 얻을 수 있기 때문에, 고품질의 반도체 소자를 제공할 수 있다. 또한, 기판을 회전시키면서 구리 무전해 도금을 실시하거나 구리 무전해 도금액의 용도를 증가시켜서 잠복기를 줄여 공정 전체 시간을 최소화할 수 있다.

10. 发明公开

KR1020030037607A 구리막 형성방법 有权
标题翻译：形成铜膜的方法
公开(公告)号：KR1020030037607A
公开(公告)日：2003-05-14
申请号：KR1020010068867
申请日：2001-11-06
申请人： 재단법인서울대학교산학협력재단
发明人： 차승환 , 김재정
IPC分类号： C23C18/40
CPC分类号： C25D7/123 , C25D3/38 , C25D5/34
摘要： PURPOSE: A method for forming copper film is provided in which formation of copper seed layer and copper electroplating are performed in the same container to prevent oxidation of the seed layer due to exposure to the atmosphere, and separate CVD or PVD apparatus for forming the copper seed layer is not required to reduce production cost. CONSTITUTION: The method comprises the steps of forming an electroless plated copper film on the surface of the object to be plated by dipping an object to be plated into an electroless plating solution comprising copper salt, complexing agent for inhibiting liquid reaction by forming copper ions and ligands, reducing agent for reducing copper ions, and a pH adjusting agent for maintaining a proper pH so that the reducing agent is oxidized; and forming an electroplated copper film on the object to be plated by directly impressing reduction potential to the object to be plated on which the electroless plated copper film is formed with the object to be plated not being taken out from the electroless plating solution, wherein the reducing agent is HCHO (formaldehyde), wherein the complexing agent is EDTA (ethylene-diamine tetraacetic acid), wherein the reduction potential is a potential corresponding to the range where copper exists for pH of the electroless plating solution in Pourbaix diagram for copper, and wherein the reduction potential is -0.5 V vs NHE or less.
摘要翻译：目的：提供一种形成铜膜的方法，其中在同一容器中进行铜籽晶层和铜电镀的形成以防止由于暴露于大气中而引起种子层的氧化，并且分离用于形成铜的CVD或PVD装置种子层不需要降低生产成本。方法：该方法包括以下步骤：通过将待镀物体浸渍到包含铜盐的化学镀溶液中，通过形成铜离子来抑制液体反应的络合剂，在待镀物体的表面上形成化学镀铜膜;以及配体，用于还原铜离子的还原剂和用于保持适当pH的pH调节剂以使还原剂被氧化; 通过对被镀物体形成电化学镀铜膜的方法，直接对被镀物体施加还原电位而形成电镀铜膜，并将其从化学镀液中取出，其中，还原剂是HCHO（甲醛），其中络合剂是EDTA（乙二胺四乙酸），其中还原电位是对应于铜存在于铜的Pourbaix图中的化学镀溶液的pH的范围的电位的电位，以及其中还原电位为-0.5V对NHE或更低。

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