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1. 发明授权

KR100761649B1 연마용 조성물 有权
标题翻译：抛光组合物
公开(公告)号：KR100761649B1
公开(公告)日：2007-09-27
申请号：KR1019990018113
申请日：1999-05-19
申请人： 제일모직주식회사
发明人： 김석진 , 이길성 , 이재석 , 장두원 , 최성필 , 이인경
IPC分类号： C09K3/14
摘要： 본 발명은 탈이온수 30∼99중량%, 금속산화물 미분말 0.1∼50중량% 및 글리콜 0.01∼10중량%를 포함하여 조성되는 것을 특징으로 하는 연마용 조성물에 관한것으로 본 발명에 따른 연마용 조성물은 특히 반도체 디바이스 제조시 CMP기술이 적용되는 층간 절연막 및 금속배선의 연마에 사용할 경우 연마후의 웨이퍼 표면에 μ-스크래치를 일으키지 않아 반도체 디바이스의 표면을 고도로 평탄화 가공할수 있는 이점을 제공한다.

CMP, 연마용 조성물, 슬러리

2. 发明授权

KR100599855B1 연마용 조성물 失效
标题翻译： CMP抛光组合物
公开(公告)号：KR100599855B1
公开(公告)日：2006-07-12
申请号：KR1019990056605
申请日：1999-12-10
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 장두원
IPC分类号： C09K3/14
摘要： 본 발명은 연마용 조성물, 특히 탈이온수와 금속산화물을 주성분으로 하고, 폴리옥시에틸렌 알킬 페닐 에테르 화합물을 포함하는 것을 특징으로 하는 연마용 조성물에 관한 것으로, 본 발명의 연마용 조성물은 연마후 웨이퍼 표면에 μ-스크래치를 거의 일으키지 않고 침강안정성 및 평탄성이 우수하므로 반도체 디바이스의 웨이퍼 표면 평탄화 가공에 유용하게 이용될 수 있다.
연마용 조성물, 반도체 디바이스, 표면평탄화, 금속산화물 미분말, 탈이온수, 폴리옥시에틸렌 알킬 페닐 에테르

3. 发明授权

KR100565419B1 연마용 조성물 失效
标题翻译： CMP组合物
公开(公告)号：KR100565419B1
公开(公告)日：2006-03-30
申请号：KR1019990056617
申请日：1999-12-10
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 장두원
IPC分类号： C09K3/14
摘要： 본 발명은 탈이온수 및 금속산화물 미분말을 포함하는 연마용 조성물에 있어서, 상기 금속산화물이 1차 입자크기 분포가 입자크기분포곡선상 반높이 폭이 20nm 이하인 범위이고, 1차 입자크기가 비표면적 160㎡/g 내지 30㎡/g 범위내인 것임을 특징으로 하는 연마용 조성물에 관한 것으로, 본 발명의 연마용 조성물은 μ-스크래치성 및 연마균일도가 우수하므로 반도체 디바이스의 광역평탄화에 이용될 경우 반도체 디바이스의 성능 및 수율을 향상시키는 효과를 제공한다.
연마용 조성물, 반도체 디바이스, 광역평탄화, 화학적 기계적 연마공정, 금속산화물, 입자크기, 반높이 폭

4. 发明公开

KR1020020047420A 반도체 소자의 금속층 연마용 슬러리 失效
标题翻译：抛光金属层
公开(公告)号：KR1020020047420A
公开(公告)日：2002-06-22
申请号：KR1020000075810
申请日：2000-12-13
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 노현수
IPC分类号： H01L21/304
摘要： PURPOSE: A slurry for polishing metal layers of semiconductor devices is provided to restrain decomposition of hydrogen peroxide by adding some 2-phosphonobutan-1,2,4-tricarboxylic acid. CONSTITUTION: A slurry for polishing metal layers of semiconductor devices is composed of a polishing agent having in the range of 0.10-10.00 weight%, an oxygenated water having in the range of 1.00-3.00 weight%, a ferrous nitrate having in the range of 0.03-0.10 weight%, a 2-phosphonobutan-1,2,4-tricarboxylic acid having in the range of 0.001-0.01 weight%, a pH controlling agent having in the range of 0.05-0.20 weight%, and a deionized water having in the range of 87.00-95.00 weight%.
摘要翻译：目的：提供一种用于抛光半导体器件的金属层的浆料，通过加入一些2-膦酰基丁-1,2,4-三羧酸来抑制过氧化氢的分解。构成：用于抛光半导体器件的金属层的浆料由0.10-10.00重量％范围内的氧化水，1.00-3.00重量％范围内的氧化水，硝酸亚铁的范围内的抛光剂组成， 0.03-0.10重量％，0.001-0.01重量％范围内的2-膦酰基丁-1,2,4-三羧酸，pH值控制剂在0.05-0.20重量％范围内，去离子水具有在87.00-95.00重量％的范围内。

5. 发明公开

KR1020020010032A 반도체 웨이퍼 절연층의 화학적 기계적 연마용 조성물 失效
标题翻译： CMP组合物
公开(公告)号：KR1020020010032A
公开(公告)日：2002-02-02
申请号：KR1020000043799
申请日：2000-07-28
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C01P2004/64 , C09K3/1463 , C23F1/14 , H01L21/3212
摘要： PURPOSE: A composition for chemical mechanical polishing(CMP) is provided, which reduces the production of micro scratch, improves the flatness of the surface of polished material and is used as a polishing agent for a semiconductor wafer. CONSTITUTION: The composition comprises 100 parts by weight of a mixture consisting of 0.1-50 wt% of metal oxide and 50-99.9 wt% of deionized water; and 0.001-10 parts by weight of a pyridine compound. Preferably the metal oxide is selected from the group consisting of silica, alumina, CeO2, ZrO2 and TiO2; the size of primary particle of the metal oxide is 10-100 nm; and the size of secondary particle of the metal oxide is 50-250 nm. The pyridine compound is selected from the group consisting of pyridine-4-methanol, pyridine-N-oxide, pyridine-3-sulfonic acid, pyridine-2-carboxaldehyde, pyridine-3-carboxaldehyde, pyridine-3-carboxylic acid, and pyridine-4-carboxylic acid.
摘要翻译：目的：提供用于化学机械抛光（CMP）的组合物，其减少微划痕的产生，提高抛光材料的表面的平整度，并且用作半导体晶片的抛光剂。组成：该组合物包含100重量份由0.1-50重量％的金属氧化物和50-99.9重量％的去离子水组成的混合物; 和0.001-10重量份的吡啶化合物。优选地，金属氧化物选自二氧化硅，氧化铝，CeO 2，ZrO 2和TiO 2; 金属氧化物的一次粒子的尺寸为10-100nm; 并且金属氧化物的二次粒子的尺寸为50〜250nm。吡啶化合物选自吡啶-4-甲醇，吡啶-N-氧化物，吡啶-3-磺酸，吡啶-2-甲醛，吡啶-3-甲醛，吡啶-3-甲酸和吡啶 -4-羧酸。

6. 发明公开

KR1020020009858A ＣＭＰ용 조성물 失效
标题翻译： CMP组合物
公开(公告)号：KR1020020009858A
公开(公告)日：2002-02-02
申请号：KR1020000043395
申请日：2000-07-27
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C01P2004/60 , C01P2004/64 , C09K3/1463 , H01L21/3212
摘要： PURPOSE: A composition for chemical mechanical polishing(CMP) is provided, which reduces the production of large particles in slurry, thereby minimizing the production of micro scratch and improving the uniformity of the surface of polished material, and is used as a polishing agent for a semiconductor wafer. CONSTITUTION: The composition comprises 100 parts by weight of a mixture consisting of 0.1-50 wt% of metal oxide and 50-99.9 wt% of deionized water; and 0.001-3 parts by weight of at least one compound selected from a benzoquinone compound represented by the formula 1 and a quebrachitol compound represented by the formula 2, wherein n is an integer of 0-5. Preferably the metal oxide is selected from the group consisting of silica, alumina, CeO2, ZrO2 and TiO2. The particle size of the metal oxide is 10-100 nm, and the average size of secondary particles of the metal oxide is 50-500 nm.
摘要翻译：目的：提供用于化学机械抛光（CMP）的组合物，其减少浆料中大颗粒的产生，从而最小化微划痕的产生并提高抛光材料表面的均匀性，并且用作抛光剂半导体晶片。组成：该组合物包含100重量份由0.1-50重量％的金属氧化物和50-99.9重量％的去离子水组成的混合物; 和0.001-3重量份的至少一种选自由式1表示的苯醌化合物的化合物和由式2表示的奇异佛醇化合物，其中n为0-5的整数。优选地，金属氧化物选自二氧化硅，氧化铝，CeO 2，ZrO 2和TiO 2。金属氧化物的粒径为10〜100nm，金属氧化物的二次粒子的平均粒径为50〜500nm。

7. 发明授权

KR100299162B1 ＣＭＰ용 금속산화물 미세 분산 슬러리의 제조방법 失效
标题翻译： CMP制备金属氧化物微分散体浆料的方法
公开(公告)号：KR100299162B1
公开(公告)日：2001-11-05
申请号：KR1019990019822
申请日：1999-05-31
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 장두원
IPC分类号： H01L21/304
摘要： 금속산화물슬러리제조시분산화단계이전에금속산화물과수용액을혼합하는데있어서, 혼합액에대하여 0.05∼0.5중량%의글리세린을물에첨가하고 -20∼20℃범위로온도를낮춘후, 이혼합온도를유지하면서금속산화물을 70㎏/h이하의속도로첨가,혼합함으로써혼합액을제조하는단계를포함하는것을특징으로하는 CMP용금속산화물슬러리의제조방법에관한것으로, 본발명에의해제조된금속산화물슬러리는분산전후의금속산화물입자의표면적변화가작으므로, 분산이보다용이하고, 분산후 제조된 CMP용슬러리의입자가다시뭉치는현상이감소하며, 슬러리의불안정으로침강하는현상이적어지므로, 슬러리내에서금속산화물입자가미세분산되어 CMP공정시연마되는웨이퍼표면의μ-스크래치가감소하고연마균일성이향상되어반도체소자 CMP용으로유용한금속슬러리를제조할수 있다.

8. 发明公开

KR1020010055411A ＣＭＰ용 실리카 슬러리의 제조방법 有权
标题翻译：制备二氧化硅浆料的方法
公开(公告)号：KR1020010055411A
公开(公告)日：2001-07-04
申请号：KR1019990056615
申请日：1999-12-10
申请人： 제일모직주식회사
发明人： 이길성 , 이재석 , 김석진 , 장두원
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C01P2006/12 , C09K3/1463 , H01L21/3212
摘要： PURPOSE: A method for preparing silica slurry for CMP(chemical mechanical polishing) of semiconductor devices is provided for improving dispersion stability to prevent alteration of physical property and reduction of grinding performance even in long-time storage. CONSTITUTION: The method for preparing silica slurry for CMP comprises freely mixing silica and deionized water and dispersing under high pressure the obtained silica slurry in the mixed solution. The method includes adding 0.01-20 wt.% of a coupling agent to the silica mixture, based on total amount of the silica slurry and dispersing it during the free-mixing process in order to perform the dispersion simultaneously with surface reforming process. The coupling agent is at least one selected from a group consisting of alcohol containing C1-C10, organic acid and its derivative containing C1-C20, and/or isocyanate, trimethyl chlorosilane, hexamethyl disilazane containing C1-C20.
摘要翻译：目的：提供半导体器件的CMP（化学机械抛光）二氧化硅浆料的制备方法，用于提高分散稳定性，以防止物理性质的改变，甚至在长时间存储时也降低研磨性能。构成：用于CMP的二氧化硅浆料的制备方法包括自由混合二氧化硅和去离子水，并在高压下分散得到的二氧化硅浆料在混合溶液中。该方法包括将0.01-20重量％的偶联剂加到二氧化硅混合物中，基于二氧化硅浆料的总量并在自由混合过程中将其分散，以便与表面重整过程同时进行分散。偶联剂是选自含有C1-C10的醇，含有C1-C20的有机酸及其衍生物和/或异氰酸酯，三甲基氯硅烷，含有C 1 -C 20的六甲基二硅氮烷中的至少一种。

9. 发明公开

KR1020010046395A 연마용 조성물 无效
标题翻译：抛光组合物
公开(公告)号：KR1020010046395A
公开(公告)日：2001-06-15
申请号：KR1019990050159
申请日：1999-11-12
申请人： 제일모직주식회사
发明人： 장두원 , 이재석 , 김석진 , 이길성
IPC分类号： C09K3/14
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： PURPOSE: A polishing composition is provided, which is improved in polishing velocity, does not produce μ-scratch on the wafer surface and is suitable for the chemical mechanical polishing of the wafer surface of semiconductor devices. CONSTITUTION: The polishing composition comprises 1-50 wt% of metal oxide fine particle comprising Al2O3/SiO2 complex as an essential component; 40-98 wt% of a deionized water; and 1-10 wt% of an additive. The metal oxide fine particle is Al2O3/SiO2 complex, or a mixture of Al2O3/SiO2 complex and at least one materials selected from silica, alumina, ceria, zirconia and titania. The Al2O3/SiO2 complex is such that it is prepared by Co-fumed method from AlCl3 and SiCl4, the contents of As2O3 and SiO2 are 67 plus or minus 15 wt% and 33 plus or minus 15 wt%, respectively, the specific surface area id 20-200 m2/g, and the particle size is 10-500 nm when it is dispersed. The additive is one or more materials selected from KOH, NH4OH, R4NOH, H3PO4, acetic acid, HCl, HF, H2O2, KIO3, HNO3, H3PO4, K2Fe(CN)6, Na2Cr2O7, KOCl, Fe(NO)3, NH2OH, DMSO, oxalic acid, maleic acid, succinic acid, potassium hydrogen phthalate, and 2-pyrrolidine.
摘要翻译：目的：提供抛光速度提高的抛光组合物，在晶片表面上不产生μ划痕，适用于半导体器件的晶片表面的化学机械抛光。构成：抛光组合物包含1-50重量％的包含Al2O3 / SiO2复合物作为必要组分的金属氧化物细颗粒; 40-98重量％的去离子水; 和1-10重量％的添加剂。金属氧化物微粒是Al 2 O 3 / SiO 2配合物，或Al 2 O 3 / SiO 2复合物和选自二氧化硅，氧化铝，二氧化铈，氧化锆和二氧化钛中的至少一种材料的混合物。 Al2O3 / SiO2复合物是通过AlCl 3和SiCl 4的共蒸发法制备的，As 2 O 3和SiO 2的含量分别为67±15重量％和33±15重量％，比表面积 id 20-200m 2 / g，分散时的粒径为10〜500nm。添加剂是选自KOH，NH 4 OH，R 4 OH，H 3 PO 4，乙酸，HCl，HF，H 2 O 2，KIO 3，HNO 3，H 3 PO 4，K 2 Fe（CN）6，Na 2 Cr 2 O 7，KOCl，Fe（NO）3，NH 2 OH， DMSO，草酸，马来酸，琥珀酸，邻苯二甲酸氢钾和2-吡咯烷。

10. 发明公开

KR1020000055130A 균일한 입자분포를 갖는 반도체소자 ＣＭＰ용 금속산화물 슬러리의 제조방법 无效
标题翻译：金属氧化物浆料的制造方法用于具有均匀颗粒分散的半导体元件的CMP处理
公开(公告)号：KR1020000055130A
公开(公告)日：2000-09-05
申请号：KR1019990003591
申请日：1999-02-03
申请人： 제일모직주식회사
发明人： 이재석 , 이길성 , 김석진 , 장두원
IPC分类号： H01L21/304
摘要： PURPOSE: A manufacturing method of metal oxide slurry for a chemical mechanical polishing (CMP) processing of a semiconductor element having uniform particle dispersion is provided to make the particle dispersion narrow and uniform by centrifuging fine-dispersed solution by a method of milling, hi-mixing or fluid collision to remarkably reduce the generating rate of micro-scratch. CONSTITUTION: Metal oxide slurry (4) in a solution state uniformly mixed with water in a predetermined concentration is flown into a dispersion device (5) through a transferring line. The transferred slurry is dispersed by a milling, hi-mixing or fluid collision method inside the dispersion device and flown into a centrifuge (6). The metal oxide slurry is centrifuged with predetermined rotating speed and rotating time in the centrifuge. Some extremely particulate-being metal oxide slurry (1) is discharged and is not used. However, the metal oxide slurry (2) for a chemical mechanical polishing (CMP) in a proper size is used but some metal oxide slurry of too large-sized particles for retrieving to the dispersion device is discharged again to the dispersion device.
摘要翻译：目的：提供一种用于化学机械抛光（CMP）处理具有均匀粒子分散的半导体元件的金属氧化物浆料的制造方法，以通过研磨方法离心细分散溶液使颗粒分散体窄而均匀，混合或液体碰撞，显着降低微划痕的产生速率。构成：以与预定浓度的水均匀混合的溶液状态的金属氧化物浆料（4）通过输送线流入分散装置（5）。转移的浆料通过在分散装置内的研磨，高混合或流体碰撞方法分散，并且流入离心机（6）。将金属氧化物浆料在离心机中以预定的旋转速度和旋转时间离心。一些非常颗粒状的金属氧化物浆料（1）被排出并且不被使用。然而，使用用于适当尺寸的化学机械抛光（CMP）的金属氧化物浆料（2），但是用于回收到分散装置的过大尺寸颗粒的一些金属氧化物浆料再次被排出到分散装置。

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