会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明公开
    • 병렬 유한 요소법 수치해석 처리기
    • 使用平行有限元素方法的数值分析处理器
    • KR1020000023857A
    • 2000-05-06
    • KR1019980042645
    • 1998-10-13
    • 이제희원태영
    • 이제희원태영
    • G06Q10/04
    • G06F17/11G06F9/5061
    • PURPOSE: A numerical analysis processor is provided to prevent an efficiency drop owing to a calculation dependency between processors by performing an independent calculation at each parallel processor. CONSTITUTION: A numerical analysis method comprises the steps of: partitioning a calculation region according to the number of processors; generating a parallel mesh in the partitioned regions; drawing a system equation in each partitioned region in parallel; unifying each system equation in each partitioned region; and calculating an inner node value of a system equation in each partitioned region. After partitioning a region for a parallel computing, a mesh of each region is produced by use of a delaunay mesh.
    • 目的:提供数字分析处理器,通过在每个并行处理器上执行独立计算,防止由于处理器之间的计算依赖关系导致的效率下降。 构成:数值分析方法包括以下步骤:根据处理器数量划分计算区域; 在分割区域中产生平行网格; 在每个划分区域中并行绘制系统方程; 在每个分区中统一每个系统方程; 以及计算每个划分区域中的系统方程的内部节点值。 在划分用于并行计算的区域之后,通过使用delaunay网格产生每个区域的网格。
    • 3. 发明公开
    • 반도체 식각 공정 시뮬레이션의 병렬 연산 구현 방법
    • 用于实现半导体蚀刻过程模拟的并行操作的方法
    • KR1020000023858A
    • 2000-05-06
    • KR1019980042646
    • 1998-10-13
    • 이제희권오섭반용찬원태영
    • 이제희권오섭반용찬원태영
    • H01L21/306
    • PURPOSE: A method for embodying parallel operation of semiconductor etching process simulation is provided to improve the accuracy of the calculation by simultaneously operating an ion behavior mechanism of a plasma region and a shape change mechanism of a substrate. CONSTITUTION: A movement(102) of an ion received from a plasma gas layer to a substrate is calculated using a numerical analysis method of a monte coral method(101). An incident angle of the ion and an incident energy of the ion are calculated by the calculated result(103). A shape change of the substrate by an incident particle is observed using a three dimensional surface advancement simulation(105). A surface advancement algorithm is performed using an algorithm(104) with a cell removing method and then the performed result is outputted to a graphic processor(106).
    • 目的:提供一种实现半导体蚀刻工艺模拟的并行操作的方法,以通过同时操作等离子体区域的离子行为机制和衬底的形状变化机制来提高计算精度。 构成:使用蒙特娄珊瑚法(101)的数值分析方法计算从等离子体气体层向基板接收的离子的运动(102)。 通过计算结果(103)计算离子的入射角和离子的入射能。 使用三维表面前进模拟(105)观察入射粒子的衬底的形状变化。 使用具有单元去除方法的算法(104)来执行表面前进算法,然后将执行结果输出到图形处理器(106)。
    • 5. 发明公开
    • 고주파 집적 회로용 인덕터 장치 및 형성 방법
    • 高频集成电路用电感器及其制造方法
    • KR1020000023863A
    • 2000-05-06
    • KR1019980043575
    • 1998-10-19
    • 김연태이제희원태영
    • 김연태이제희원태영
    • H01L27/04
    • PURPOSE: An inductor for a high-frequency integrated circuit and a method for fabricating the same are provided to prevent the deterioration of inductance properties such as a Q value and a resonance frequency of a semiconductor integrated circuit by connecting a first metal layer to a second layer in a state where the second layer does not contact a semiconductor substrate. CONSTITUTION: An inductor for a high-frequency integrated circuit includes first and second metal layers. The first metal layer is formed on a semiconductor substrate through a photoresist process. The second metal layer is connected to the first metal layer without contacting the semiconductor substrate such that the inductor is formed in a spiral-structure. That is, the second metal layer is spaced away from the semiconductor substrate in a state where a portion thereof is connected to the first metal layer.
    • 目的:提供一种用于高频集成电路的电感器及其制造方法,以通过将第一金属层连接到第二金属层来防止半导体集成电路的Q值和谐振频率等电感特性的劣化 层,其中第二层不接触半导体衬底。 构成:用于高频集成电路的电感器包括第一和第二金属层。 第一金属层通过光刻胶工艺形成在半导体衬底上。 第二金属层连接到第一金属层而不与半导体基板接触,使得电感器形成为螺旋结构。 也就是说,第二金属层在其一部分连接到第一金属层的状态下与半导体基板间隔开。