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1. 发明授权

KR100259609B1 전이금속 박막의 식각방법 失效
标题翻译：用于过渡金属层的蚀刻方法
公开(公告)号：KR100259609B1
公开(公告)日：2000-08-01
申请号：KR1019960021235
申请日：1996-06-13
申请人： 우성일
发明人： 우성일 , 김진홍
IPC分类号： H01L21/306
摘要： PURPOSE: A method of etching a transition metal thin film is provided to allow a fast etching without having a side-product redeposited by the vaporization and sublimation of the volatile composition, thereby forming a micropattern of the good profile, and have a high selectivity with respect to the mask and the lower material. CONSTITUTION: A semiconductor substrate having a transition metal thin film selected from the group made of ruthenium, iridium, rhodium, platinum, nickel and copper is loaded to the reactor. By injecting a mixed gas made of the first gas made of at least a gas selected from the halogen gas and halogen type gas, and the second gas made of at least a gas selected from the carbon oxidation group gas, a hydrogen carbide group gas, a nitrogen oxidation group gas and a nitrogen group gas, the transition metal thin film is transformed to the volatile composition.
摘要翻译：目的：提供一种蚀刻过渡金属薄膜的方法，以便通过挥发性组合物的蒸发和升华而不会副产物重新沉积，从而形成具有良好外形的微图案，并且具有高选择性相对于面具和下部材料。构成：将具有选自钌，铱，铑，铂，镍和铜的过渡金属薄膜的半导体衬底装载到反应器中。通过注入由至少选自卤素气体和卤素气体中的气体制成的第一气体的混合气体，以及由至少选自碳氧化气体，碳氢化合物气体，氮氧化基团气体和氮气体，将过渡金属薄膜转变成挥发性组合物。

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