会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明公开
    • 화학 증폭형 포지티브 레지스트 조성물
    • 一种化学放大的积极抵抗组合物
    • KR1020100002206A
    • 2010-01-06
    • KR1020090057302
    • 2009-06-25
    • 스미또모 가가꾸 가부시키가이샤
    • 시게마쓰준지에다마쓰구니시게미야가와다카유키가마부치아키라
    • G03F7/039G03F7/004
    • G03F7/0397G03F7/0046
    • PURPOSE: A chemically amplified positive resist composition is provided to form a resist film having good homogeneous film surface, to suppress the formation of defects, and to be suitable for ArF excimer laser lithography process, KrF excimer laser lithography process and ArF immersion lithography process. CONSTITUTION: A chemically amplified positive resist composition comprises: a resin (A) which itself is insoluble or poorly soluble in an aqueous alkali solution but becomes soluble in an aqueous alkali solution by the action of an acid and which comprises a structural unit having an acid-labile group in a side chain and a structural unit represented by the formula (I), wherein R1 represents a hydrogen atom or a methyl group, ring X1 represents an unsubstituted or substituted C3-C30 cyclic hydrocarbon group having -COO- and k represents an integer of 1 to 4, a resin (B) which comprises a structural unit represented by the formula (II), wherein R2 represents a hydrogen atom, a methyl group or a trifluoromethyl group, and an acid generator.
    • 目的:提供化学放大的正性抗蚀剂组合物以形成具有良好的均匀膜表面的抗蚀剂膜,以抑制缺陷的形成,并且适用于ArF准分子激光光刻工艺,KrF准分子激光光刻工艺和ArF浸没光刻工艺。 构成:化学增幅正型抗蚀剂组合物包括:本身在碱性水溶液中不溶或难溶于但在酸性水溶液中溶解的树脂(A),其包含具有酸的结构单元 (I)表示的结构单元,其中,R 1表示氢原子或甲基,环X1表示未取代或取代的C 30 -C 30环状烃基,k表示 1〜4的整数,由式(II)表示的结构单元的树脂(B),其中,R2表示氢原子,甲基或三氟甲基,酸产生剂。