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1. 发明授权

KR100399283B1 고성능 유기 박막 트랜지스트의 소자 구조 및 그 제조방법. 有权
标题翻译： 고성능유기박막트랜지스트의소자구조및그제조방법。
公开(公告)号：KR100399283B1
公开(公告)日：2003-09-26
申请号：KR1020010023629
申请日：2001-05-02
申请人： 송정근 , 권영수
发明人： 송정근 , 구본원 , 김도현 , 정민경 , 이상백
IPC分类号： H01L29/786
摘要： PURPOSE: A device structure and fabrication method for a high performance organic thin film transistor are provided to improve electrical properties which are close-packing and carrier mobility of an organic active layer. CONSTITUTION: A high performance organic thin film transistor comprises a substrate(1) comprised of silicon, plastic or glass, a gate(2) of an organic transistor deposited on the substrate through lift-off process, a gate insulation layer(3) with high dielectric constant deposited on the gate, a source and drain metallic electrode(4) deposited on the insulation layer through lift-off process, an organic buffer layer(5) with chemical bonds between the source and drain metallic electrode and the organic active layer(7), a self-assembly(6) between the gate insulation layer and the organic active layer.
摘要翻译：目的：提供一种用于高性能有机薄膜晶体管的器件结构和制造方法，以改善有机活性层的紧密堆积和载流子迁移率的电性能。本发明公开了一种高性能有机薄膜晶体管，包括由硅，塑料或玻璃构成的基板（1），通过剥离工艺沉积在基板上的有机晶体管的栅极（2），栅极绝缘层（3）沉积在栅极上的高介电常数，通过剥离工艺沉积在绝缘层上的源极和漏极金属电极（4），在源极和漏极金属电极和有机活性层之间具有化学键的有机缓冲层（5）（7），栅绝缘层和有机活性层之间的自组装（6）。

2. 发明公开

KR1020020084427A 고성능 유기 박막 트랜지스트의 소자 구조 및 그 제조방법. 有权
标题翻译：高性能有机薄膜晶体管的器件结构与制造方法
公开(公告)号：KR1020020084427A
公开(公告)日：2002-11-09
申请号：KR1020010023629
申请日：2001-05-02
申请人： 송정근 , 권영수
发明人： 송정근 , 구본원 , 김도현 , 정민경 , 이상백
IPC分类号： H01L29/786
摘要： PURPOSE: A device structure and fabrication method for a high performance organic thin film transistor are provided to improve electrical properties which are close-packing and carrier mobility of an organic active layer. CONSTITUTION: A high performance organic thin film transistor comprises a substrate(1) comprised of silicon, plastic or glass, a gate(2) of an organic transistor deposited on the substrate through lift-off process, a gate insulation layer(3) with high dielectric constant deposited on the gate, a source and drain metallic electrode(4) deposited on the insulation layer through lift-off process, an organic buffer layer(5) with chemical bonds between the source and drain metallic electrode and the organic active layer(7), a self-assembly(6) between the gate insulation layer and the organic active layer.
摘要翻译：目的：提供一种用于高性能有机薄膜晶体管的器件结构和制造方法，以改善有机活性层的紧密堆积和载流子迁移率的电性能。构成：高性能有机薄膜晶体管包括由硅，塑料或玻璃构成的衬底（1），通过剥离工艺沉积在衬底上的有机晶体管的栅极（2），具有沉积在栅极上的高介电常数，通过剥离过程沉积在绝缘层上的源极和漏极金属电极（4），在源极和漏极金属电极与有机有源层之间具有化学键的有机缓冲层（5）（7），栅极绝缘层和有机活性层之间的自组装（6）。

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