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    • 2. 发明公开
    • 나노와이어가 결정성장된 반도체기판 및 나노와이어의결정성장공정
    • 纳米线纳米线晶体半导体基片和晶体生长过程
    • KR1020030096187A
    • 2003-12-24
    • KR1020030085387
    • 2003-11-28
    • 성윤모(주)나노텍
    • 성윤모김대희이정철박경수신영근나정준황상호홍순진성훈
    • H01L21/18B82Y40/00
    • PURPOSE: A nano wire crystal grown semiconductor substrate and a crystal growth process of a nano wire are provided to be capable of preventing inner defect from being prevailed from a semiconductor substrate to the nano wire and carrying out an epitaxial growth process for forming the nano wire by using the upper and lower buffer layer deposited between the nano wire and the semiconductor substrate. CONSTITUTION: The first buffer layer(40) is deposited at the upper portion of a semiconductor substrate(10). The second buffer layer(50) is deposited on the first buffer layer. Then, nano size catalysts(20) are deposited at the upper portion of the second buffer layer. A crystal growth process is carried out at the upper portion of the resultant structure by using gallium and reaction gas for forming a nano wire(30), wherein the nano wire has the same lattice constant as the second buffer layer.
    • 目的:提供纳米线晶体生长半导体衬底和纳米线的晶体生长工艺,以能够防止内部缺陷从半导体衬底到纳米线的优势,并进行用于形成纳米线的外延生长工艺 通过使用沉积在纳米线和半导体衬底之间的上下缓冲层。 构成:第一缓冲层(40)沉积在半导体衬底(10)的上部。 第二缓冲层(50)沉积在第一缓冲层上。 然后,在第二缓冲层的上部沉积纳米尺寸的催化剂(20)。 通过使用镓和用于形成纳米线(30)的反应气体,在所得结构的上部进行晶体生长处理,其中纳米线具有与第二缓冲层相同的晶格常数。
    • 4. 发明公开
    • 공석출법을 이용한 수산화아파타이트 복합나노분말의제조방법
    • 通过共沉淀制备纳米尺寸的羟基磷灰石复合粉末
    • KR1020040051382A
    • 2004-06-18
    • KR1020020079308
    • 2002-12-12
    • 성윤모
    • 성윤모장경태황상호성훈김대희이진경이정철박경수이용지아닐쿠마박하나
    • B82B3/00B82Y40/00
    • C01B25/32B82Y40/00C01P2004/64
    • PURPOSE: Provided is a simple preparation method of nano-sized hydroxyapatite composite powder, HAp/YSZ powder, with excellent fracture toughness and abrasion resistance by co-precipitation process. CONSTITUTION: The nano-sized hydroxyapatite(HAp, Ca10(PO4)6(OH)2) is prepared by the following steps of: preparing Ca-precursor solution and P-precursor solution by dissolving calcium nitrate(or calcium hydroxide) and ammonium phosphate in water to be a Ca/P ratio of 1.67-2.0; adding NH4OH to each solution to get calcium nitrate slurry(a first solution) and ammonium phosphate slurry(a second solution); preparing zirconium nitrate slurry(a third solution) and yttrium nitrate slurry(a fourth solution) by dissolving zirconium nitrate hydrates and yttrium nitrate hydrates in water, and adding NH4OH to each solution to be pH10.4; dropping the fourth solution to the third solution to form hydroxyapatite/yttrium stabilized zirconia(HAp/YSZ) for 1hr, standing and filtering to get HAp/YSZ gel; calcining the gel at 250-300deg.C for 1-3hrs and crystallizing at 800-1200deg.C over 0.5hrs; and wet-ball milling prepared hydroxyapatite powder.
    • 目的:提供纳米级羟基磷灰石复合粉末HAp / YSZ粉末的制备方法,具有优异的断裂韧性和共沉淀过程的耐磨性能。 构成:通过以下步骤制备纳米级羟基磷灰石(HAp,Ca10(PO4)6(OH)2):通过将硝酸钙(或氢氧化钙)和磷酸铵溶解在一起制备Ca前体溶液和P-前体溶液 在水中的Ca / P比为1.67-2.0; 向每个溶液中加入NH 4 OH以得到硝酸钙浆液(第一溶液)和磷酸铵浆料(第二溶液); 通过将硝酸锆水合物和硝酸钇水合物溶解在水中制备硝酸锆浆液(第三溶液)和硝酸钇浆液(第四溶液),并将NH 4 OH加入到每个溶液中为pH10.4; 将第四溶液滴加到第三溶液中,形成羟基磷灰石/钇稳定氧化锆(HAp / YSZ)1小时,静置和过滤得到HAp / YSZ凝胶; 将凝胶在250-300℃下煅烧1-3小时,并在0.5-100℃下结晶0.5小时; 和湿球磨制备羟基磷灰石粉末。
    • 6. 发明授权
    • 나노와이어가 결정성장된 반도체기판 및 나노와이어의결정성장공정
    • 나노와이어가결정성장된반도체기판및나노와이어의결정성장공정
    • KR100432874B1
    • 2004-06-01
    • KR1020030085387
    • 2003-11-28
    • 성윤모(주)나노텍
    • 성윤모김대희이정철박경수신영근나정준황상호홍순진성훈
    • H01L21/18B82Y40/00
    • PURPOSE: A nano wire crystal grown semiconductor substrate and a crystal growth process of a nano wire are provided to be capable of preventing inner defect from being prevailed from a semiconductor substrate to the nano wire and carrying out an epitaxial growth process for forming the nano wire by using the upper and lower buffer layer deposited between the nano wire and the semiconductor substrate. CONSTITUTION: The first buffer layer(40) is deposited at the upper portion of a semiconductor substrate(10). The second buffer layer(50) is deposited on the first buffer layer. Then, nano size catalysts(20) are deposited at the upper portion of the second buffer layer. A crystal growth process is carried out at the upper portion of the resultant structure by using gallium and reaction gas for forming a nano wire(30), wherein the nano wire has the same lattice constant as the second buffer layer.
    • 目的:提供纳米线晶体生长的半导体衬底和纳米线的晶体生长工艺,以能够防止内部缺陷从半导体衬底盛行到纳米线,并且执行用于形成纳米线的外延生长工艺 通过使用沉积在纳米线与半导体衬底之间的上缓冲层和下缓冲层。 构成:第一缓冲层(40)沉积在半导体衬底(10)的上部。 第二缓冲层(50)沉积在第一缓冲层上。 然后,纳米尺寸催化剂(20)沉积在第二缓冲层的上部。 通过使用镓和反应气体形成纳米线(30),在所得结构的上部执行晶体生长过程,其中纳米线具有与第二缓冲层相同的晶格常数。
    • 8. 发明公开
    • 수산화아파타이트 나노분말의 제조방법
    • 纳米尺寸的羟基磷灰石粉的制备
    • KR1020040051381A
    • 2004-06-18
    • KR1020020079307
    • 2002-12-12
    • 성윤모장경태
    • 성윤모장경태황상호성훈김대희이진경이정철박경수이용지아닐쿠마박하나
    • B82B3/00B82Y40/00
    • C01B25/32B82Y40/00C01P2004/64
    • PURPOSE: Provided is a preparation method of nano-sized hydroxyapatite powder with high purity and biological stability by controlling the amount of tri-calcium phosphate(TCP) in coprecipitation process. CONSTITUTION: The nano-sized hydroxyapatite(HAp, Ca10(PO4)6(OH)2) is prepared by the following steps of: preparing Ca-precursor solution and P-precursor solution by dissolving calcium nitrate(or calcium hydroxide) and ammonium phosphate in water to be a Ca/P ratio of 1.67-2.0; adding NH4OH to each solution to get calcium nitrate slurry(a first solution) and ammonium phosphate slurry(a second solution), wherein the pH of the slurry is 10.4; dropping the second solution to the first solution to form hydroxyapatite; stirring for 1hr, standing and filtering to get hydroxyapatite gel; calcining the gel at 250-300deg.C for 1-3hrs and crystallizing at 800-1200deg.C over 0.5hrs; ball-milling prepared hydroxyapatite powder. The prepared hydroxyapatite powder has less than 100nm in size.
    • 目的:通过控制共沉淀过程中三磷酸钙(TCP)的量,制备了具有高纯度和生物稳定性的纳米级羟基磷灰石粉末的制备方法。 构成:通过以下步骤制备纳米级羟基磷灰石(HAp,Ca10(PO4)6(OH)2):通过将硝酸钙(或氢氧化钙)和磷酸铵溶解在一起制备Ca前体溶液和P-前体溶液 在水中的Ca / P比为1.67-2.0; 向每个溶液中加入NH 4 OH以得到硝酸钙浆料(第一溶液)和磷酸铵浆料(第二溶液),其中浆料的pH为10.4; 将第二溶液滴加到第一溶液中以形成羟基磷灰石; 搅拌1小时,静置和过滤得到羟基磷灰石凝胶; 将凝胶在250-300℃下煅烧1-3小时,并在0.5-100℃下结晶0.5小时; 球磨制备的羟基磷灰石粉末。 制备的羟基磷灰石粉末的尺寸小于100nm。