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1. 发明公开

KR1020050107089A 웨이퍼 로딩/언로딩 확인 방법 失效
标题翻译：确认装载/卸载波形状态的方法
公开(公告)号：KR1020050107089A
公开(公告)日：2005-11-11
申请号：KR1020040032273
申请日：2004-05-07
申请人： 삼성전자주식회사
发明人： 현기철 , 장용필 , 이철재
IPC分类号： H01L21/68
CPC分类号： H01L21/67265
摘要： 본 발명의 웨이퍼 로딩/언로딩 확인 방법에 따르면, 웨이퍼가 로딩/언로딩 되었는지 여부가 센서로 감지되고, 로딩/언로딩 된 웨이퍼의 수가 각각 카운트된다. 상기 카운트한 결과가 서로 일치하는 경우 언로딩이 완료된 것으로 판단되어 카세트가 제거된다. 웨이퍼 언로딩 완료전에 카세트가 제거되거나 웨이퍼 언로딩 완료후 일정한 시간이 경과하여도 카세트가 제거되지 않는 경우에는 경보음이 발생된다.
본 발명에 의하면, 웨이퍼가 언로딩이 완료된 후에 카세트를 제거할 수 있게 되어 웨이퍼 브로큰을 방지할 수 있으며, 카세트의 제거 이상 상태를 경보음으로 알려 작업의 효율화를 꾀할 수 있다.

2. 发明公开

KR1020010060810A 공정가스 안정공급을 위한 반도체 제조장치 无效
标题翻译：用于提供稳定加工气体的半导体制造系统
公开(公告)号：KR1020010060810A
公开(公告)日：2001-07-07
申请号：KR1019990063252
申请日：1999-12-28
申请人： 삼성전자주식회사
发明人： 우창우 , 이철재 , 윤명식 , 이지훈
IPC分类号： H01L21/205
摘要： PURPOSE: A semiconductor manufacturing system for providing stably a processing gas is provided to supply stably a low pressure gas by exchanging a gas storage tank in a proper time. CONSTITUTION: A gas cylinder(10) stores a processing gas of a low pressure. A multitude of process chamber(21,22,23) performs arbitrary processes by using the processing gas supplied from gas cylinder(10) through a supply line(30). A plurality of opening and shutting valve(V1,V2,V3) is installed at each front portion of the process chambers(20). A control portion(40) checks the supply amount of the processing gas and operates an alarm device(50) for outputting an alarm signal. The control portion(40) has an inner timer for checking each valve.
摘要翻译：目的：提供稳定地提供处理气体的半导体制造系统，以通过在适当的时间更换储气罐来稳定地供应低压气体。构成：气瓶（10）存储低压处理气体。多个处理室（21,22,23）通过使用从气瓶（10）通过供应管线（30）供应的处理气体来执行任意处理。多个打开和关闭阀（V1，V2，V3）安装在处理室（20）的每个前部。控制部（40）检查处理气体的供给量，并操作用于输出报警信号的报警装置（50）。控制部分（40）具有用于检查每个阀的内部计时器。

3. 发明授权

KR100560817B1 웨이퍼 로딩/언로딩 확인 방법 失效
标题翻译：确认装载/卸载波形状态的方法
公开(公告)号：KR100560817B1
公开(公告)日：2006-03-13
申请号：KR1020040032273
申请日：2004-05-07
申请人： 삼성전자주식회사
发明人： 현기철 , 장용필 , 이철재
IPC分类号： H01L21/68
摘要： 본 발명의 웨이퍼 로딩/언로딩 확인 방법에 따르면, 웨이퍼가 로딩/언로딩 되었는지 여부가 센서로 감지되고, 로딩/언로딩 된 웨이퍼의 수가 각각 카운트된다. 상기 카운트한 결과가 서로 일치하는 경우 언로딩이 완료된 것으로 판단되어 카세트가 제거된다. 웨이퍼 언로딩 완료전에 카세트가 제거되거나 웨이퍼 언로딩 완료후 일정한 시간이 경과하여도 카세트가 제거되지 않는 경우에는 경보음이 발생된다.
본 발명에 의하면, 웨이퍼가 언로딩이 완료된 후에 카세트를 제거할 수 있게 되어 웨이퍼 브로큰을 방지할 수 있으며, 카세트의 제거 이상 상태를 경보음으로 알려 작업의 효율화를 꾀할 수 있다.

4. 发明公开

KR1020030031647A 가스 공급구성을 개선한 화학기상증착장치 无效
标题翻译：在气体组合物中改进的CVD装置
公开(公告)号：KR1020030031647A
公开(公告)日：2003-04-23
申请号：KR1020010063386
申请日：2001-10-15
申请人： 삼성전자주식회사
发明人： 이철재 , 표창수
IPC分类号： H01L21/205
摘要： PURPOSE: A CVD(Chemical Vapor Deposition) apparatus to be improved on gas flow composition in it is provided to perform effectively a cleaning process for a process chamber by supplying uniformly a reaction gas into the inside of the process chamber. CONSTITUTION: A process chamber(100) includes a susceptor(110) for loading a wafer. The first supply path(200) is used for supplying a reaction gas into a center portion of the inside of the process chamber(100). The second supply path(210) is used for supplying an edge portion of the inside of the process chamber(100). The first needle valve(220) is installed on the first supply path(200). The second needle valve(230) is installed on the second supply path(210). An inlet and an outlet of a branch path(240) are connected with a front portion and a rear portion of the second needle valve(230), respectively. A normal close valve(250) is installed on the branch path(240).
摘要翻译：目的：提供一种在气流组成中改进的CVD（化学气相沉积）装置，以通过均匀地将反应气体均匀地供给到处理室的内部来有效地执行处理室的清洁处理。构成：处理室（100）包括用于加载晶片的基座（110）。第一供给路径（200）用于将反应气体供给到处理室（100）的内部的中央部。第二供应路径（210）用于供应处理室（100）内部的边缘部分。第一针阀（220）安装在第一供给路径（200）上。第二针阀230安装在第二供给路径210上。分支路径（240）的入口和出口分别与第二针阀（230）的前部和后部连接。在分支路径（240）上安装有常闭阀（250）。

5. 实用新型

KR2019970059816U 진공 시스템의 스로틀 밸브 无效
标题翻译：真空系统的节流阀
公开(公告)号：KR2019970059816U
公开(公告)日：1997-11-10
申请号：KR2019960009051
申请日：1996-04-24
申请人： 삼성전자주식회사
发明人： 이철재
IPC分类号： H01L21/205
摘要： 본고안은진공시스템의스로톨밸브에관한것으로, 본고안에의한스로틀밸브는본체와, 상기본체에서회전축을중심으로소정의각도만큼회전가능하게설치되고, 회전량에따라펌프의펌핑량을조절하는콘트롤러를갖추고, 상기콘트롤러와상기본체사이에는 0.5~1.0㎜의간격이형성된다. 본고안에의하면, 반도체제조장치와함께사용되는진공시스템의스로틀밸브에서이물질에의해초래되는콘트롤러의진공제어불량을최소화할수 있다.
摘要翻译：该真空系统的节流阀由主体和控制器组成，该控制器安装在主体中以便可围绕旋转轴线旋转预定角度并根据旋转量调节泵的泵送量，在控制器和主体之间形成0.5到1.0mm的间隔。在本文中，由半导体制造设备使用的真空系统的节流阀中的异物引起的控制器的真空控制故障可以被最小化。

6. 发明公开

KR1020030092158A 기판 상에 막을 형성하기 위한 장치 无效
标题翻译：用于在基板上部形成层的装置
公开(公告)号：KR1020030092158A
公开(公告)日：2003-12-06
申请号：KR1020020029348
申请日：2002-05-27
申请人： 삼성전자주식회사
发明人： 이상열 , 이승무 , 이철재 , 박유춘
IPC分类号： H01L21/205
摘要： PURPOSE: An apparatus for forming a layer at the upper portion of a substrate is provided to be capable of minimizing the damage of a susceptor due to the gas used for forming the layer. CONSTITUTION: An apparatus for forming a layer is provided with a chamber(200) for loading a semiconductor substrate(10), a heater(204) installed at the inner portion of the chamber for heating the semiconductor substrate, a susceptor(202) installed at the upper portion of the heater for supporting the semiconductor substrate, and a thermocouple(230) loaded into the first groove of the susceptor for measuring the temperature of the susceptor. The apparatus for forming a layer further includes a fixing part(232) for preventing gas from flowing through an unexpected portion between the first groove and the thermocouple and fixing the thermocouple to the susceptor.
摘要翻译：目的：提供一种用于在基板上部形成层的装置，以便能够最小化由于用于形成层的气体而导致的基座的损坏。构成：用于形成层的装置设置有用于加载半导体衬底（10）的室（200），安装在室的内部的加热器（204），用于加热半导体衬底;安装在基座在用于支撑半导体衬底的加热器的上部，以及加载到基座的第一槽中的热电偶（230），用于测量基座的温度。用于形成层的装置还包括用于防止气体流过第一凹槽和热电偶之间的意外部分并将热电偶固定到基座的固定部分（232）。

7. 发明公开

KR1020020094741A 화학기상증착 장치의 가열부 无效
标题翻译：加热部分化学蒸气沉积装置
公开(公告)号：KR1020020094741A
公开(公告)日：2002-12-18
申请号：KR1020010033156
申请日：2001-06-13
申请人： 삼성전자주식회사
发明人： 이철재
IPC分类号： C23C16/46
CPC分类号： C23C16/4586 , H01L21/68785
摘要： PURPOSE: A heating part of chemical vapor deposition apparatus is provided which increases connection area between connection terminal of a ground line and connection part of a heater so that residual current is smoothly discharged. CONSTITUTION: In a heating part(200) of chemical vapor deposition apparatus comprising a heater(210) having first, second and third connection parts(211,212,213) and supplying heat to a wafer holder(10); a power supply part(220) that is electrically connected to the heater(210); a loaded line(240) and a neutral line(250) for electrically connecting the first and second connection parts(211,212) to the power supply part(220); a ground line(260) having first and second connection terminals(261,262) that are inserted into a ground part(270) formed on the body of a chamber and the third connection part(213); and a protection part(230) for sealing the first, second and third connection parts(211,212,213), the heating part(200) of the chemical vapor deposition apparatus is characterized in that the third connection part(213) is a female type socket on which screw thread is formed, and the first connection terminal(261) is a male type screw on which screw thread corresponding to the third connection part is formed, and wherein the ground part(270) is a female type socket on which screw thread is formed, and the second connection terminal(262) is a male type screw on which screw thread is formed so that the second connection terminal(262) corresponds to the ground part(270).
摘要翻译：目的：提供化学气相沉积装置的加热部分，其增加了接地线的连接端子与加热器的连接部分之间的连接面积，使得剩余电流平稳地排出。构成：在化学气相沉积装置的加热部分（200）中，包括具有第一，第二和第三连接部分（211,212,213）并向晶片保持器（10）供热的加热器（210）; 与所述加热器电连接的电源部件; 用于将第一和第二连接部分（211,212）电连接到电源部分（220）的负载线（240）和中性线（250）; 具有插入到形成在室主体上的接地部分（270）和第三连接部分（213）中的第一和第二连接端子（261,262）的地线（260）; 以及用于密封第一，第二和第三连接部分（211,212,213）的保护部分（230），化学气相沉积设备的加热部分（200）的特征在于，第三连接部分（213）是阴型插座形成螺纹，第一连接端子（261）是形成有与第三连接部对应的螺纹的阳型螺钉，其中，接地部（270）为螺纹为母螺纹的母型插座第二连接端子（262）是形成有螺纹的阳螺纹，第二连接端子（262）对应于接地部（270）。

8. 发明公开

KR1020010088085A 반도체 제조 설비 无效
标题翻译：制造半导体设备
公开(公告)号：KR1020010088085A
公开(公告)日：2001-09-26
申请号：KR1020000012097
申请日：2000-03-10
申请人： 삼성전자주식회사
发明人： 이철재
IPC分类号： H01L21/02
摘要： PURPOSE: Equipment for manufacturing a semiconductor is provided to minimize defects generated in a deposition process of a wafer, by preventing a gas supply line and an air valve installed in the line from being contaminated by a backward flow of pressure generated when a vacuum pump stops. CONSTITUTION: A process for manufacturing a semiconductor is performed in a chamber(110) in a vacuum state. An interception valve(140) is installed in a vacuum line(120) connected to the chamber. A vacuum pump(130) decreases the pressure inside the chamber, connected to the vacuum line. A gas supply line(150) supplies gas necessary for manufacturing the semiconductor, connected to the vacuum line between the interception valve and the vacuum pump. An interception unit is installed to the gas supply line to prevent process gas flowing forward in the gas supply line from flowing backward because the vacuum pump stops.
摘要翻译：目的：提供用于制造半导体的设备，以通过防止气体供应管线和安装在管线中的空气阀被真空泵停止时产生的反向压力污染而使晶片沉积过程中产生的缺陷最小化。构成：在真空状态的室（110）中进行制造半导体的工艺。拦截阀（140）安装在连接到腔室的真空管线（120）中。真空泵（130）减小连接到真空管线的腔室内的压力。气体供给管线（150）供给与截止阀和真空泵之间的真空管路连接的半导体制造所需的气体。拦截单元被安装到气体供应管线上，以防止由于真空泵停止而在气体供应管线中向前流动的处理气体向后流动。

9. 发明公开

KR1020000051204A 반도체 쿨링장치 无效
标题翻译：半导体冷却装置
公开(公告)号：KR1020000051204A
公开(公告)日：2000-08-16
申请号：KR1019990001504
申请日：1999-01-19
申请人： 삼성전자주식회사
发明人： 이철재 , 박시연 , 최상민
IPC分类号： H01L21/68
摘要： PURPOSE: An apparatus is provided to prevent a wafer breaking caused by pressure of cooling gas. CONSTITUTION: A cooler tray(12) including two wafer clamp lines(18,20) loads a wafer(10) heated up more 400°C for cooling it to less 50°C. It also includes a ball(22) on an upper side for preventing the break of the wafer caused by heat stress. A cooling gas like argon is injected into a gas poppet(14) through a gas flow line(30) placed on a projection tube(14a) formed around a cooler poppet. A gas flow line is made of elastic rubber not to disturb gas flow when moving up/down the cooler poppet. An injected gas is sprayed over the wafer uniformly through many holes(14b) so position shift of a wafer caused by pressure of a cooling gas can be prevented.
摘要翻译：目的：提供一种防止冷却气体压力引起的晶片破裂的装置。构成：包括两个晶片夹紧线（18,20）的冷却器托盘（12）将加热到400℃以上的晶片（10）加载到较低的50℃。它还包括在上侧的球（22），用于防止由热应力引起的晶片断裂。诸如氩气的冷却气体通过放置在形成在较冷提升阀座上的突出管（14a）上的气体流动管线（30）注入到气体提升阀（14）中。气体流动线由弹性橡胶制成，不会在冷却器提升阀上下移动时干扰气体流动。喷射的气体通过许多孔（14b）均匀地喷射在晶片上，因此可以防止由冷却气体的压力引起的晶片的位置偏移。

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