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    • 10. 发明公开
    • 반도체 패키지 및 이의 제조 방법
    • 半导体封装及其制造方法
    • KR1020090005873A
    • 2009-01-14
    • KR1020070069257
    • 2007-07-10
    • 삼성전자주식회사
    • 손민영양승열이민호이승재
    • H01L23/12
    • H01L2224/48091H01L2224/48227H01L2224/73265H01L2224/8592H01L2924/15311H01L2924/181H01L2924/00014H01L2924/00012
    • The semiconductor package and manufacturing method thereof are provided to reduce the thickness in the mounting of the semiconductor package by rewiring the center pad chip as the edge pad chip. The semiconductor chip(120) comprises the bonding pad(130) and is arranged on the top of the substrate(110). The bonding pad is arranged in the top surface center of the substrate and serves as the input-output terminal of the electric signal. The semiconductor chip comprises a plurality of bonding pads. The protective film(140) is made of the insulating material like the silicon oxide film or the silicon nitride film and is formed in the top surface of the bonding pad and semiconductor chip. The first insulation layer(150) is formed on the protective film. The metal bottom layer(160) is formed on the upper side and the first insulation layer of the exposed bonding pad.
    • 半导体封装及其制造方法被设置为通过重新布线作为边缘焊盘芯片的中心焊盘芯片来减小半导体封装的安装厚度。 半导体芯片(120)包括焊盘(130)并且布置在基板(110)的顶部上。 焊盘设置在基板的顶面中心,作为电信号的输入输出端子。 半导体芯片包括多个接合焊盘。 保护膜(140)由氧化硅膜或氮化硅膜等绝缘材料构成,形成在焊盘和半导体芯片的顶面。 第一绝缘层(150)形成在保护膜上。 金属底层(160)形成在暴露的焊盘的上侧和第一绝缘层上。