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1. 发明公开

KR1020030090280A 이온 설비용 아크 챔버 无效
标题翻译：离子设备电弧室
公开(公告)号：KR1020030090280A
公开(公告)日：2003-11-28
申请号：KR1020020028329
申请日：2002-05-22
申请人： 삼성전자주식회사
发明人： 박상현 , 이하성 , 박흥우
IPC分类号： H01L21/265
摘要： PURPOSE: An arc chamber for an ion equipment is provided to maximize the efficiency of ionization between thermoelectrons and reaction gas within a chamber housing by supplying directly the reaction gas to each filament through gas tubes connected to a chamber housing. CONSTITUTION: An arc chamber for ion equipment includes a chamber housing(10), a plurality of filaments(20), and a couple of gas tubes(30) in order to generate the ionized reaction gas to by colliding the reaction gas with thermoelectrons of the filaments(20). The filaments(20) are installed at both sides of the chamber housing(10). The gas tubes(30) are used for supplying directly the reaction gas to the filaments(20). The gas tubes(30) are installed at each bottom portion of the filaments(20) or each side portion of the filaments(20).
摘要翻译：目的：提供一种用于离子设备的电弧室，以通过直接通过连接到腔室壳体的气体管将反应气体直接供应给每个灯丝来最大化室内热电子与反应气体之间的电离效率。构成：用于离子设备的电弧室包括腔室壳体（10），多个细丝（20）和一对气体管（30），以便产生电离反应气体，以使反应气体与热电子细丝（20）。细丝（20）安装在腔室（10）的两侧。气体管（30）用于将反应气体直接供给到细丝（20）。气体管（30）安装在细丝（20）的每个底部或细丝（20）的每个侧部。

2. 发明公开

KR1020030061160A 스핀 증폭기용 전원 공급 장치 无效
标题翻译：用于旋转放大器的电源装置
公开(公告)号：KR1020030061160A
公开(公告)日：2003-07-18
申请号：KR1020020001699
申请日：2002-01-11
申请人： 삼성전자주식회사
发明人： 이인모 , 박흥우
IPC分类号： H02H3/26
摘要： PURPOSE: A power supply device is provided to stably cut off a power supplied to a spin amplifier. CONSTITUTION: A spin amplifier(20) includes a power input terminal(22) for receiving a power supplied from a power supply device(10) via a power supply line(12). The power supply terminal(22) includes a terminal(MA) for receiving an A-phase provided from the power supply device(10), a terminal(MB) for receiving a B-phase, a terminal(MC) for receiving a C-phase and a terminal(GND) for receiving a ground voltage. The terminals(MB,MC,GND) are directly connected to the power supply device(10) via the power supply line(12) and the terminal(MA) is connected to the power supply device(10) via a switch(30).
摘要翻译：目的：提供电源装置，以稳定地切断提供给自旋放大器的电源。构成：自旋放大器（20）包括用于经由电源线（12）接收从电源装置（10）提供的电力的电力输入端子（22）。电源端子（22）包括用于接收从电源装置（10）提供的A相的端子（MA），用于接收B相的端子（MB），用于接收C相的端子（MC）相和用于接收接地电压的端子（GND）。端子（MB，MC，GND）通过电源线（12）直接连接到电源装置（10），并且端子（MA）经由开关（30）连接到电源装置（10）。

3. 发明公开

KR1020020071165A 반도체 제조 공정에서의 웨이퍼 로딩방법 无效
标题翻译：在半导体制造工艺中加载水的方法
公开(公告)号：KR1020020071165A
公开(公告)日：2002-09-12
申请号：KR1020010011138
申请日：2001-03-05
申请人： 삼성전자주식회사
发明人： 박흥우 , 오형원 , 김효진 , 문경태
IPC分类号： H01L21/68
摘要： PURPOSE: A method for loading a wafer in a semiconductor fabrication process is provided to enhance productivity by reducing a time for transferring a wafer. CONSTITUTION: A wafer cassette(130) is loaded in the second load lock chamber(114) adjacent to a process chamber(120). The second load lock chamber(114) is located at the nearest place from the load lock chamber(120). The wafer cassette is loaded in the third load lock chamber(116) and the first load lock chamber(112), sequentially. A wafer transfer process is performed by transferring the wafer of the wafer cassette loaded in the second load lock chamber(114). Accordingly, a processing time can be reduced by transferring the second load lock chamber(114) located at the nearest place from the load lock chamber(120).
摘要翻译：目的：提供一种在半导体制造工艺中加载晶片的方法，以通过减少转印晶片的时间来提高生产率。构成：在与处理室（120）相邻的第二负载锁定室（114）中装载晶片盒（130）。第二负载锁定室（114）位于离加载锁定室（120）最近的位置。晶片盒依次装载到第三负载锁定室116和第一负载锁定室112中。通过转印装载在第二加载锁定室（114）中的晶片盒的晶片来进行晶片转印处理。因此，通过将位于最靠近的位置的第二负载锁定室（114）从负载锁定室（120）传送，可以减少处理时间。

4. 发明公开

KR1020000021292A 이온주입공정 제어방법 无效
标题翻译：控制离子植入工艺的方法
公开(公告)号：KR1020000021292A
公开(公告)日：2000-04-25
申请号：KR1019980040308
申请日：1998-09-28
申请人： 삼성전자주식회사
发明人： 남영민 , 박진영 , 박운기 , 박흥우
IPC分类号： H01L21/265
摘要： PURPOSE: A method for controlling an ion implanting process is provided to improve process efficiency by improving a recipe editing in a manual mode for successively performing stopped ion-implanting. CONSTITUTION: A control method comprises the steps of converting to a manual mode in mode menu when ion implantation process is stopped, selecting a recipe by temporary assigning the title of the recipe in the manual mode, editing the selected recipe using the information of processed ion implanting, and successive performing ion implantation process by using the edited recipe.
摘要翻译：目的：提供一种用于控制离子注入过程的方法，通过改进用于连续进行停止离子注入的手动模式中的配方编辑来提高工艺效率。规定：控制方法包括以下步骤：当离子植入过程停止时转换为模式菜单中的手动模式，通过在手动模式下临时分配配方的标题来选择配方，使用处理离子的信息编辑所选配方植入和连续执行离子植入过程。

5. 发明公开

KR1020000021281A 반도체 소자의 제조장치 无效
标题翻译：制造半导体器件的装置
公开(公告)号：KR1020000021281A
公开(公告)日：2000-04-25
申请号：KR1019980040297
申请日：1998-09-28
申请人： 삼성전자주식회사
发明人： 박진영 , 박흥우 , 남영민 , 박운기
IPC分类号： H01L21/265
摘要： PURPOSE: An ion implanter for fabricating semiconductor devices is provided easily implant exact quality of dose by using an adding mode and numerical input unit in a programmable logic controller. CONSTITUTION: An ion implanter includes a programmable logic controller. The programmable logic controller further comprises an adding mode and a numerical input unit. The adding mode and the numerical input unit helps to calculate the quantities of ion-implantation dose exactly and selectively. When the adding mode is selected, total dose quantity performed the ion-implantation is inputted by using the numerical input unit.
摘要翻译：目的：提供一种用于制造半导体器件的离子注入机，通过在可编程逻辑控制器中使用添加模式和数字输入单元，可轻松植入精确的剂量质量。构成：离子注入机包括可编程逻辑控制器。可编程逻辑控制器还包括加法模式和数字输入单元。添加模式和数字输入单元有助于精确和有选择地计算离子注入剂量。当选择添加模式时，使用数字输入单元输入进行离子注入的总剂量。

6. 发明公开

KR1020000021280A 이온주입설비의 소오스 챔버에 대한 진공 형성방법 无效
标题翻译：在离子植入物的源室中形成真空的方法
公开(公告)号：KR1020000021280A
公开(公告)日：2000-04-25
申请号：KR1019980040296
申请日：1998-09-28
申请人： 삼성전자주식회사
发明人： 황종성 , 박진영 , 박흥우 , 남영민
IPC分类号： H01L21/265
摘要： PURPOSE: A vacuum formation method in a source chamber of ion implanter is provided to increase a lifetime of a turbo pump by preventing the turbo pump from polluting. CONSTITUTION: A method comprises the steps of making vacuum state a turbo pump(104)and a source chamber(100) vacuum state by using a roughing pump(102), operating the turbo pump(104) when the degree of vacuum in the source chamber(100) reach to a predetermined level. At this time, when RPM of the turbo pump(104) reach to a desired level, the turbo pump(104) and the roughing pump(102) are simultaneously operated by opening a valve(E) connected between the turbo pump(102) and the source chamber(100).
摘要翻译：目的：提供离子注入机的源室中的真空形成方法，以通过防止涡轮泵污染来增加涡轮泵的使用寿命。构成：一种方法包括以下步骤：通过使用粗抽泵（102）使涡轮泵（104）和源室（100）处于真空状态的真空状态，当源中的真空度室（100）达到预定水平。此时，当涡轮泵（104）的RPM达到期望水平时，通过打开连接在涡轮泵（102）和涡轮泵（102）之间的阀（E）同时操作涡轮泵104和粗齿泵102，和源室（100）。

7. 发明公开

KR1020070065495A 스핀 디스크의 패드 클리닝 장치 및 이를 이용한 패드클리닝 방법 无效
标题翻译：圆盘清洗装置及其清洗方法
公开(公告)号：KR1020070065495A
公开(公告)日：2007-06-25
申请号：KR1020050125983
申请日：2005-12-20
申请人： 삼성전자주식회사
发明人： 채승원 , 김은석 , 박흥우
IPC分类号： H01L21/02 , H01L21/304
摘要： A pad cleaning apparatus for a spin disc and a pad cleaning method using the same are provided to quickly and effectively eliminate particles from a surface of a pad by spraying nitrogen gas onto the surface and simultaneously exhausting a process chamber. A gas purge part sprays a gas onto a surface of a pad(202) to separate particles from the surface of the pad on which a wafer is directly loaded. A vacuum pump(206) exhausts a process chamber, in which particles separated from the surface of the pad by the gas sprayed from the gas purge part are floating. The gas sprayed onto the surface of the pad is nitrogen.
摘要翻译：提供一种用于旋转盘的垫清洁装置和使用其的垫清洁方法，通过将氮气喷射到表面上并同时排出处理室来快速有效地从垫的表面消除颗粒。气体吹扫部分将气体喷射到焊盘（202）的表面上，以从其上直接装载晶片的焊盘的表面分离颗粒。真空泵（206）排出处理室，其中通过从气体吹扫部分喷射的气体从垫的表面分离的颗粒是浮动的。喷在垫表面的气体是氮气。

8. 发明公开

KR1020060008375A 반도체 제조용 웨이퍼 핸들러 无效
标题翻译：用于制造半导体器件的波形处理器
公开(公告)号：KR1020060008375A
公开(公告)日：2006-01-26
申请号：KR1020040057048
申请日：2004-07-22
申请人： 삼성전자주식회사
发明人： 박흥우
IPC分类号： H01L21/68
CPC分类号： H01L21/67766 , H01L21/67242
摘要： 웨이퍼를 웨이퍼 카세트에 로딩 및 언로딩 시키는 과정에서 웨이퍼의 손상을 방지하기 위한 반도체 웨이퍼 핸들러(handler)를 개시한다. 본 발명에 의한 웨이퍼를 웨이퍼 카세트에 로딩 및 언로딩 하는 웨이퍼 핸들러는 상기 웨이퍼 핸들러에서 상기 웨이퍼가 놓이는 웨이퍼 이송암의 지지대는 상부와 하부가 분리되어 완충유닛으로 연결되어 있으며 상기 하부에는 센서가 장착된 것을 특징으로 한다. 따라서 상기 웨이퍼 핸들러의 웨이퍼 이송암은 웨이퍼 카세트에 탑재되어 있는 웨이퍼의 로딩 및 언로딩 시 웨이퍼와 웨이퍼 핸들러가 부딪힘으로써 웨이퍼가 손상되는 것을 방지할 수 있다.

웨이퍼 핸들러, 웨이퍼 카세트, 척, 웨이퍼

9. 发明公开

KR1020040099860A 이온주입장치 无效
标题翻译：用于在减速模式离子植入过程中监测抑制电压的离子植入装置
公开(公告)号：KR1020040099860A
公开(公告)日：2004-12-02
申请号：KR1020030031988
申请日：2003-05-20
申请人： 삼성전자주식회사
发明人： 김형용 , 임태섭 , 박흥우 , 박병현
IPC分类号： H01J37/30
摘要： PURPOSE: An ion implantation apparatus is provided to monitor whether suppression voltage is normally supplied or not by installing a suppression voltage monitoring contactor in a deceleration bar in addition to a suppression voltage output contactor. CONSTITUTION: An ion implantation apparatus includes a source part(300), an ion beam line part(400), a deceleration suppression supply contactor(140), and a deceleration suppression monitor contactor(150). The source part generates ions to be doped into the wafer. The ion beam line part includes an acceleration column(200) for accelerating or decelerating the generated ions. The deceleration suppression supply contactor supplies a deceleration suppression voltage to the acceleration column. The deceleration suppression monitor contactor monitors the deceleration suppression voltage. The deceleration suppression supply contactor and the deceleration suppression monitor contactor simultaneously come into contact with the acceleration columns and electrically connected to a deceleration suppression power supply part(600).
摘要翻译：目的：提供一种离子注入装置，用于通过在抑制电压输出接触器之外将抑制电压监视接触器安装在减速杆中来监视抑制电压是否正常供电。构成：离子注入装置包括源部（300），离子束线部（400），减速抑制供给接触器（140）和减速抑制监视接触器（150）。源部分产生要掺杂到晶片中的离子。离子束线部分包括用于加速或减速所产生的离子的加速度柱（200）。减速抑制电源接触器向加速度列提供减速抑制电压。减速抑制监视接触器监控减速抑制电压。减速抑制电源接触器和减速抑制监视器接触器同时与加速度柱接触并与减速抑制电源部件600电连接。

10. 发明公开

KR1020040080787A 인쇄회로기판 검사장치 无效
标题翻译：打印电路板测试装置可测量印刷电路板上的电流流动
公开(公告)号：KR1020040080787A
公开(公告)日：2004-09-20
申请号：KR1020030015764
申请日：2003-03-13
申请人： 삼성전자주식회사
发明人： 박병현 , 김형용 , 박흥우
IPC分类号： H05K13/08
CPC分类号： G01R31/2806 , H05K1/0268
摘要： PURPOSE: A print circuit board test apparatus is provided to easily judge whether a printed circuit board is normal or not, by measuring the current flowing along the printed circuit board. CONSTITUTION: A printed circuit board test apparatus(200) comprises a first connector(210) connected to a power supply(110); a second connector(220) connected to a printed circuit board(300); and a measurement unit(230) for measuring the current flowing along the printed circuit board. The first connector includes pins for fixing the printed circuit board test apparatus to the power supply, and the second connector includes pin holes for insertion of the pins.
摘要翻译：目的：通过测量沿着印刷电路板流动的电流，提供印刷电路板测试装置以容易地判断印刷电路板是否正常。构成：印刷电路板测试装置（200）包括连接到电源（110）的第一连接器（210）; 连接到印刷电路板（300）的第二连接器（220）; 以及用于测量沿着印刷电路板流动的电流的测量单元（230）。第一连接器包括用于将印刷电路板测试装置固定到电源的引脚，并且第二连接器包括用于插入引脚的销孔。

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