专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

KR1020070104404A 반도체 발광 소자 无效
标题翻译：半导体发光元件
公开(公告)号：KR1020070104404A
公开(公告)日：2007-10-25
申请号：KR1020077018376
申请日：2006-02-15
申请人： 로무 가부시키가이샤
发明人： 이토노리카즈 , 츠츠미카즈아키 , 니시다토시오 , 소노베마사유키 , 사카이미츠히코 , 야마구치아츠시
IPC分类号： H01L33/20
CPC分类号： H01L33/38 , H01L33/20
摘要： A nitride semiconductor light emitting element exhibiting excellent reliability in which deterioration of a semiconductor layer is prevented and the semiconductor layer is not broken easily even when a reverse direction voltage is applied or even in long time operation. On the surface of a substrate (1), a semiconductor multilayer portion (6), which is composed of a nitride semiconductor and includes a first conductivity type layer (p-type layer (5)) and a second conductivity type layer (n-type layer (3)), is formed, a p-side electrode (8) is provided thereon while being connected electrically with a translucent conductive layer (7) and the p-type layer (5), and an n-side electrode (9) is provided while being connected electrically with an n-type layer (3) on the lower layer side of the semiconductor multilayer portion (6). A mesa-like semiconductor multilayer portion (6a) is formed by removing the semiconductor multilayer portion (6) around the chip by etching, and the mesa-like semiconductor multilayer portion (6a) is etched such that a corner part has curved line, not having an angle of 90° or less in the planar shape.
摘要翻译：即使在施加反向电压或长时间运转时，也能够防止半导体层劣化，半导体层不容易破坏的显示优异的可靠性的氮化物半导体发光元件。在基板（1）的表面上，由氮化物半导体构成的包含第一导电型层（p型层）和第二导电型层（n-型层）的半导体层叠部（6）型层（3））形成，在其上设置p侧电极（8），同时与透光性导电层（7）和p型层（5）电连接，n侧电极在与半导体多层部分（6）的下层侧的n型层（3）电连接的同时，提供图9所示的结构。通过蚀刻去除芯片周围的半导体多层部分（6）形成台状半导体多层部分（6a），并且蚀刻台面状半导体多层部分（6a）使得角部分具有曲线，而不是在平面形状中具有90°或更小的角度。

IPRDB

热门服务

关于我们

友情链接

联系方式