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1. 发明专利

JP2015040801A 微小熱伝導率測定装置及び測定方法有权
标题翻译：测量装置和测量方法的分钟热传导率
公开(公告)号：JP2015040801A
公开(公告)日：2015-03-02
申请号：JP2013172783
申请日：2013-08-23
申请人：独立行政法人物質・材料研究機構 , National Institute For Materials Science
发明人： KAWAMOTO NAOYUKI , MORI TAKAO , KAMATA HIROTOSHI , DEMITRY GOLBERG , MITOME MASANORI
IPC分类号： G01N25/18 , G01N23/225 , H01J37/20
摘要：【課題】ナノ・ミクロスケールの微小領域の熱伝導率を測定する。【解決手段】一端をエポキシ樹脂などの高熱抵抗材料で熱的に遮蔽した試料を収束した電子線で照射して熱を印加し、それによる熱流により熱遮蔽の反対側端部に生じた温度上昇を微小な熱電対で測定する。このような電子線照射を複数の照射点に対して行い、これらの照射点位置及び対応する温度上昇から、照射点間あるいは照射点から熱電対の接触点までの熱伝導率が求められる。【選択図】図10
摘要翻译：要解决的问题：测量纳米微尺度微小区域的导热率。解决方案：一分钟热导率测量装置：照射一端被高耐热材料如环氧树脂热隔离的样品树脂，会聚电子束加热; 并且通过一对微小的热电偶来测量由与热量相关的热隔离相反的端部产生的温度升高。微小热导率测量装置对多个照射点进行该电子束照射，并且基于照射点位置和相应的温度获得照射点之间或从照射点到热电偶的接触点的热传导率上升。

2. 发明专利

JP2007134229A Transmission electron microscope 有权
标题翻译：传输电子显微镜
公开(公告)号：JP2007134229A
公开(公告)日：2007-05-31
申请号：JP2005327684
申请日：2005-11-11
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： ISHIZUKA KAZUO , MITOME MASANORI , KIMOTO KOJI , BANDO YOSHIO
IPC分类号： H01J37/26
摘要： PROBLEM TO BE SOLVED: To provide a device for measuring a phase distribution of electron waves in high speed in order to obtain various kinds of information such as phase objects of small absorption contrast, intensity of electric fields and magnetic fields, aberration of an electromagnetic lens by measuring changes of phases observed when the electron waves transmit an object, pass through the electric field and the magnetic field, are bent by the electromagnetic lens, or the like.
SOLUTION: The transmission electron microscope is provided with a mechanism of fast and automatically selecting a measurement face of a measured object, an image measurement mechanism capable of fast reading and writing an electron wave intensity distribution, and an arithmetic mechanism of fast measuring and displaying the phase distribution of the electron waves based on an intensity transport equation as a general formula expressing a relation between phase changes and intensity changes of waves transmitting a free space from a plurality of images stored in the image measurement mechanism.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于测量高速电子波相位分布的装置，以便获得各种信息，例如小的吸收对比度，电场强度和磁场的相位对象，像差通过测量当电子束透过物体，通过电场和磁场时观察到的相位变化的电磁透镜被电磁透镜等弯曲。解决方案：透射电子显微镜具有快速自动选择测量对象的测量面的机构，能够快速读写电子波强度分布的图像测量机构，以及快速测量的算术机构并且基于强度传输方程显示电子波的相位分布，作为表示从图像测量机构中存储的多个图像中发送自由空间的波的相位变化和强度变化之间的关系的通式。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2005153027A Ferroelectric meso crystal bearing thin film and manufacturing method thereof 有权
标题翻译：电磁MESO晶体轴承薄膜及其制造方法
公开(公告)号：JP2005153027A
公开(公告)日：2005-06-16
申请号：JP2003390498
申请日：2003-11-20
申请人： Japan Science & Technology Agency , National Institute For Materials Science , 独立行政法人物質・材料研究機構 , 独立行政法人科学技術振興機構
发明人： FURUBIKI SHIGEMI , SHIMOOKA HIROKAZU , BANDO YOSHIO , MITOME MASANORI
IPC分类号： B82B1/00 , C04B35/00 , C04B35/495 , H01B3/12 , H01L21/316 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric meso crystal bearing thin film and a manufacturing method thereof, forming a ferroelectric thin film applied as a high-density. SOLUTION: This ferroelectric thin film is obtained as follows. Silicon alkoxide and surface active agent are dissolved in alcohol of carbon numbers 1 to 3, and hydrolysis and polymerization reactoin of the alkoxide are accelerated by adding acid and water added thereto to form a self-organized sol. A thin film is formed of the sol, the thin film is made into dry gel or heated gel, and further burnt, and the surface active agent is removed to form a thin film where pores uniform in nano size and regularly arrayed are formed. Subsequently, the thin film having the pores of the nano size is dipped in a solution containing metal alkoxide or metal acetyl acetonite forming ferroelectric crystal, and precursor solution is synthesized by dissolving the alkoxide or acetyl acetonite in alcohol of carbon numbers 1 to 2. The sol or the precursor solution formed by adding acid or alkali and water to the above solution to cause hydrolysis of the alkoxide. The sol or the precursor solutio is absorbed in the pores, and dried and burnt to form a ferroelectric microcrystal of nano size in the pores. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种强电介质晶体轴承薄膜及其制造方法，形成作为高密度应用的铁电薄膜。
解决方案：该铁电薄膜如下获得。将硅烷醇盐和表面活性剂溶解在碳数1〜3的醇中，通过加入酸和水来加速醇盐的水解和聚合反应，形成自组织的溶胶。由溶胶形成薄膜，将薄膜制成干燥凝胶或加热凝胶，进一步烧制，除去表面活性剂，形成其中形成纳米尺寸均匀且规则排列的孔的薄膜。随后，将具有纳米尺寸的孔的薄膜浸入形成铁电晶体的金属醇盐或金属乙酰丙酮的溶液中，通过将醇盐或乙酰丙酮溶解在碳数为1至2的醇中来合成前体溶液。溶胶或通过向上述溶液中加入酸或碱和水形成的前体溶液以引起醇盐的水解。溶胶或前体溶液被吸收在孔中，并干燥并燃烧以在孔中形成纳米尺寸的铁电微晶。版权所有（C）2005，JPO＆NCIPI

4. 发明专利

JP2008214180A Ferroelectric thin film 审中-公开
标题翻译：电磁薄膜
公开(公告)号：JP2008214180A
公开(公告)日：2008-09-18
申请号：JP2008029848
申请日：2008-02-12
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： FURUBIKI SHIGEMI , SHIMOOKA HIROKAZU , BANDO YOSHIO , MITOME MASANORI
IPC分类号： C04B35/00 , B82B1/00 , C01B33/12 , C01B37/00 , C01G23/00 , C01G29/00 , C01G33/00 , C01G35/00 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a ferroelectric thin film useful as a high density memory device, having a structure where ferroelectric meso-crystals are regularly aligned by being oriented on the surface of a substrate, and to provide a method for producing the same. SOLUTION: This ferroelectric-carrying thin film, in which ferroelectric meso-crystals are filled in pores of a silicate nano-porous thin film, is produced by the steps of applying a stock solution on various substrates by spin coating (a first stage: 2,000 rpm for 10 seconds; a second stage: 4,000 rpm for 30 seconds), thereafter heat-treating in air to produce a silicate meso-porous thin film comprising regularly aligned nanometer size pores, then synthesizing a ferroelectric precursor solution, immersing the substrate, on which the silicate meso-porous thin film is formed, in this solution, leaving it at rest for one day, taking it out and firing it in air. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用作高密度存储器件的铁电薄膜，其具有通过在衬底的表面上取向而规则地排列强电介质晶体的结构，并且提供一种生产一样。解决方案：通过以下步骤生产铁酸内晶体填充在硅酸盐纳米多孔薄膜的孔中的铁电载带薄膜：通过旋涂（第一种阶段：2,000rpm 10秒;第二阶段：4000rpm，30秒），然后在空气中热处理以产生包含规则排列的纳米尺寸孔的硅酸盐中孔多孔薄膜，然后合成铁电前体溶液，将在其中形成硅酸盐中孔多孔薄膜的底物在该溶液中，使其静置一天，将其排出并在空气中焙烧。版权所有（C）2008，JPO＆INPIT

5. 发明专利

JP2010162648A Nano conductance material and method of manufacturing the same 审中-公开
标题翻译：纳米导体材料及其制造方法
公开(公告)号：JP2010162648A
公开(公告)日：2010-07-29
申请号：JP2009006731
申请日：2009-01-15
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： COSTA PEDRO , DEMITRY GOLBERG , MITOME MASANORI , BANDO YOSHIO
IPC分类号： B82B1/00 , B82B3/00 , H01B1/04 , H01B13/00
摘要： PROBLEM TO BE SOLVED: To provide a nanometer-sized conductance material and its manufacturing method.
SOLUTION: A mixture of a conductive nanotube with both ends opened, and an electric resistance substance is mashed, put in an airtight container, and heated at 600°C, so that the substance-included type nanotube including the electric resistance substance is generated. The nanotube is taken out from the airtight container, and heated at the sublimation temperature of the included substance or higher. Thus, the conductance material having the included substance reduced in conductance down to a desired level is manufactured.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供纳米尺寸的导电材料及其制造方法。解决方案：将导电性纳米管的两端的混合物打开，将电阻物质捣碎，放入密闭容器中，在600℃下加热，使含有电阻物质的物质包含型纳米管被生成。将纳米管从密闭容器中取出，并在所含物质的升华温度以上加热。因此，制造具有降低到所需水平的导电性的包含物质的电导材料。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008207996A Magnetic semiconductor and its production method 有权
标题翻译：磁性半导体及其生产方法
公开(公告)号：JP2008207996A
公开(公告)日：2008-09-11
申请号：JP2007046400
申请日：2007-02-27
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： KURODA SHINJI , NISHIZAWA NOZOMI , TAKITA HIROKI , MITOME MASANORI , BANDO YOSHIO , THOMASZ DIETL
IPC分类号： C30B29/46 , B82B1/00 , B82B3/00 , C01B19/04 , C23C14/00 , H01F10/193 , H01L21/363
摘要： PROBLEM TO BE SOLVED: To realize a membrane crystal having the following characteristics: the autonomous formation of a nanocrystal containing a magnetic element in a high concentration is controlled artificially in a semiconductor containing a magnetic element; and even when the average composition of the magnetic element in the crystal is 20% or less, the crystal becomes to be in a ferromagnetic or superparamagnetic status at room temperature or higher, causing hysteresis in a magnetization process.
SOLUTION: The autonomous development of a nanocrystal containing a magnetic element in a high concentration is made to be artificially controllable by adjusting an attractive force interaction between ions by changing the valence of a magnetic element ion in the crystal by adding an n-type or p-type dopant to a semiconductor containing the magnetic element or by regulating the deviation from a stoichiometric ratio in the composition rate of constituting elements in a compound by the adjustment of a raw material supply quantity at the time of crystal growth in the case of a compound semiconductor.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决问题：为了实现具有以下特性的膜晶体：在含有磁性元件的半导体中人为地控制含有高浓度的磁性元素的纳米晶体的自主形成; 即使在晶体中的磁性元素的平均成分为20％以下的情况下，在室温以上也变为铁磁性或超顺磁性，在磁化过程中产生迟滞。解决方案：通过调节离子之间的吸引力相互作用，使含有高浓度的磁性元素的纳米晶体自主发展成人为可控，通过添加n- 或包含该磁性元件的半导体的半导体型或p型掺杂剂，或通过调节晶体生长时的原料供给量调整化合物中构成元素的组成比的化学计量比的偏差的化合物半导体。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2005314190A Hollow single crystal of inorganic oxide, crystal material containing the single crystal, and methods for producing them 审中-公开
标题翻译：无机氧化物的单晶，含有单晶的晶体材料及其生产方法
公开(公告)号：JP2005314190A
公开(公告)日：2005-11-10
申请号：JP2004136562
申请日：2004-04-30
申请人： Japan Science & Technology Agency , National Institute For Materials Science , 独立行政法人物質・材料研究機構 , 独立行政法人科学技術振興機構
发明人： SHIMOOKA HIROKAZU , TANIZAKI TAKUMI , FURUBIKI SHIGEMI , MITOME MASANORI , BANDO YOSHIO
IPC分类号： C01G23/00 , C30B1/02 , C30B29/32 , C30B29/66
摘要： PROBLEM TO BE SOLVED: To provide a hollow single crystal of an inorganic oxide having uniformly-shaped internal fine pores and a high permittivity and to provide a method for producing a hollow crystal material of the inorganic oxide as its application.
SOLUTION: The hollow crystal material of the inorganic oxide is produced by mixing an alkoxide solution of an inorganic substance with a fine pore-forming substance, effecting its hydrolysis and polycondensation, aging the product at a temperature lower than the decomposition temperature of the fine pore-forming substance, and thereafter removing the fine pore-forming agent from the product. It is preferable that a metal alkoxide solution is used as the alkoxide solution of the inorganic substance, and it is preferable that the removal of the fine pore-forming substance is carried out by sintering the product in an oxidizing atmosphere.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供具有均匀形状的内部细孔和高介电常数的无机氧化物的中空单晶，并提供其无机氧化物的中空晶体材料的制备方法。解决方案：无机氧化物的中空晶体材料是通过将无机物质的醇盐溶液与细孔形成物质混合而进行的，进行水解和缩聚反应，使产物在低于分解温度细孔形成物质，然后从产物中除去细孔形成剂。优选使用金属醇盐溶液作为无机物质的醇盐溶液，优选通过在氧化气氛中烧结产物来除去细孔形成物质。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005239524A BETA-Ga2O3 NANOROD AND ITS MANUFACTURING METHOD 审中-公开
标题翻译： BETA-Ga2O3 NANOROD及其制造方法
公开(公告)号：JP2005239524A
公开(公告)日：2005-09-08
申请号：JP2004055379
申请日：2004-02-27
申请人： Japan Science & Technology Agency , National Institute For Materials Science , 独立行政法人物質・材料研究機構 , 独立行政法人科学技術振興機構
发明人： FURUBIKI SHIGEMI , YASUI KIMIHIRO , HORI KYOKO , SHISHIDO NORIYOSHI , BANDO YOSHIO , MITOME MASANORI
IPC分类号： C01G15/00 , C30B29/16 , C30B29/66
摘要： PROBLEM TO BE SOLVED: To provide a β-Ga
2 O
3 nanorod useful as an optoelectronic material such as a semiconductor laser, an emitter and a photonic crystal and having controlled morphology, growth direction or the like, and to provide its manufacturing method.
SOLUTION: The β-Ga
2 O
3 nanorod essentially comprises β-Ga
2 O
3 and has a nanorod shape having 2 O
3 powder and graphite powder as the source material to about 1,050 to 1,200°C in an inert gas flow, and without keeping that temperature or with keeping that temperature, controlling the shape to grow up the β-Ga
2 O
3 nanorod on a substrate having an island-like metal thin film heated at about 600 to 700°C.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供可用作诸如半导体激光器，发射极和光子晶体的光电子材料的β-Ga 2 3 具有受控的形态，生长方向等，并提供其制造方法。解决方案：β-Ga 2 3 纳米棒基本上包含β-Ga 2 3 和具有纳米棒形状，具有直径小于1500nm，长度比≥1的球形顶端或球体在顶部的沉积。通过将惰性气体流中的作为源材料的β-Ga 2 SB 3 O 3 SB 3粉末和作为原料的石墨粉末的混合物加热至约1050〜1200℃而获得纳米棒，并且在不保持该温度或保持该温度的情况下，在具有岛状金属薄膜的基板上控制形状以使β-Ga 2 纳米棒长大在约600-700℃加热。版权所有（C）2005，JPO＆NCIPI

9. 发明专利

JP2004168611A Method of manufacturing orientation multilayer nanotube 有权
标题翻译：制造方向多层纳米管的方法
公开(公告)号：JP2004168611A
公开(公告)日：2004-06-17
申请号：JP2002337912
申请日：2002-11-21
申请人： National Institute For Materials Science , 独立行政法人物質・材料研究機構
发明人： BANDO YOSHIO , DMITRI GOLBERG , MITOME MASANORI
IPC分类号： B82B3/00 , C01B21/082
摘要： PROBLEM TO BE SOLVED: To provide a novel method of an orientation multilayer nanotube by which a multilayer boron nitride nanotube or a multilayer nanotube composed of boron, carbon and nitrogen atoms which is useful as a semiconductor material, a flat panel display material, an emitter material, a heat resistant filler, a high strength material, a catalyst or the like and has the high orientation property is simply manufactured.
SOLUTION: The multilayer boron nitride nanotube having the orientation property is produced by reacting boron oxide, copper oxide, molybdenum oxide (4) and nitrogen (5) with a multilayer carbon nanotube (2) at a high temperature of 1,500-2,500°K.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种定向多层纳米管的新方法，通过该方法可以使用多层氮化硼纳米管或由硼，碳和氮原子组成的多层纳米管，其可用作半导体材料，平板显示材料，发射体材料，耐热填料，高强度材料，催化剂等，并且具有高取向性简单地制造。解决方案：具有取向性的多层氮化硼纳米管通过在1500-2,500℃的高温下使氧化硼，氧化铜，氧化钼（4）和氮（5）与多层碳纳米管（2）反应来制备 °K。版权所有（C）2004，JPO

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