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1. 发明专利

JP2007096263A SiC SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译： SiC半导体器件及其制造方法
公开(公告)号：JP2007096263A
公开(公告)日：2007-04-12
申请号：JP2006162448
申请日：2006-06-12
申请人： Denso Corp , 株式会社デンソー
发明人： ENDO TAKESHI , OKUNO HIDEKAZU , KAWAI JUN , YAMAMOTO KENSAKU , YAMAMOTO TAKESHI
IPC分类号： H01L29/78 , H01L21/336 , H01L29/12
CPC分类号： H01L21/049 , H01L29/045 , H01L29/0847 , H01L29/513 , H01L29/518 , H01L29/66068 , H01L29/78 , H01L29/7828 , H01L29/7838
摘要： PROBLEM TO BE SOLVED: To provide a SiC semiconductor device capable of improving its channel mobility, and to provide the method of manufacturing the same. SOLUTION: During the time of heat reduction in a gate oxide film forming step, heat is made to drop down to below the termination/regeneration temperature (800 to 900°C) while wet atmosphere is maintained. Therefore, the dangling bond of the interface of a p-type base layer that constitutes the gate oxide film and a channel region can be terminated with an element H or OH. As a result, an inversion-type lateral MOSFET with high channel mobility can be obtained. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供能够提高其沟道迁移率的SiC半导体器件，并提供其制造方法。解决方案：在栅极氧化膜形成步骤中的热还原期间，在保持湿气氛的同时，使热量降至低于终止/再生温度（800-900℃）。因此，构成栅极氧化膜的p型基极层和沟道区的界面的悬挂键可以用元素H或OH终止。结果，可以获得具有高通道迁移率的反型型横向MOSFET。版权所有（C）2007，JPO＆INPIT

2. 发明专利

JP2004206927A Transparent el display device 审中-公开
标题翻译：透明EL显示装置
公开(公告)号：JP2004206927A
公开(公告)日：2004-07-22
申请号：JP2002372093
申请日：2002-12-24
申请人： Denso Corp , 株式会社デンソー
发明人： KAWAI JUN , HATTORI TAMOTSU , SAKAI KENICHI
IPC分类号： H05B33/12 , H05B33/02 , H05B33/04
摘要： PROBLEM TO BE SOLVED: To provide a transparent EL display device with high transparency while enabling white-color display with sufficient luminance. SOLUTION: This display device includes a surface light-emitting element 3 having a lightguide plate 2 composed of a transparent acrylic etc. for guiding a light introduced from an end face 2a toward a side of a main surface 2b and a blue-color light-emitting diode 1 as a light source disposed on a side of the end face 2a of the plate 2 and performing surface light-emitting from the main surface 2b of the plate 2, and a transparent EL element 4 overlapped in opposition to the main surface 2b of the plate 2 and has an emission color different from that of the surface light-emission. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供具有高透明度的透明EL显示装置，同时实现具有足够亮度的白色显示。解决方案：该显示装置包括具有由透明丙烯酸等构成的导光板2的表面发光元件3，用于将从端面2a向主面2b侧引入的光引导，彩色发光二极管1作为光源设置在板2的端面2a的一侧，并且从板2的主表面2b发射表面，以及透明EL元件4，其与板2的主表面2b，并且具有与表面发光不同的发射颜色。版权所有（C）2004，JPO＆NCIPI

3. 发明专利

JP2011091100A Method of manufacturing silicon carbide semiconductor device 有权
标题翻译：制造碳化硅半导体器件的方法
公开(公告)号：JP2011091100A
公开(公告)日：2011-05-06
申请号：JP2009241612
申请日：2009-10-20
申请人： Denso Corp , 株式会社デンソー
发明人： KAWAI JUN , TSURUTA KAZUHIRO
IPC分类号： H01L21/28 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/7828 , H01L21/0485 , H01L21/268 , H01L29/1608 , H01L29/34 , H01L29/41766 , H01L29/45 , H01L29/66068
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device in which an ohmic electrode can be formed through a low-temperature process without employing impurity doping.
SOLUTION: After an element structure and a surface electrode are formed on the top-surface side of an n
+ -type substrate 1, the reverse surface 1b of the semiconductor substrate having surface roughness (Ra) of ≤10 nm is processed so that (100%-reflectivity-permeability) becomes ≥80% at a wavelength of a laser beam to be irradiated. After a metal thin film 110 is formed on the reverse surface 1b of the semiconductor substrate having been processed so that (100%-reflectivity-permeability) becomes ≥80% at the wavelength of the laser beam to be irradiated, the side of the reverse surface 1b of the n
+ -type substrate 1 is irradiated with laser light to form a drain electrode 11 including a silicide layer 111. Consequently, the silicide layer 111 is formed on the drain electrode 11 in the reverse side of the n
+ -type substrate 1 without subjecting the n
+ -type substrate 1 to high-temperature processing. The drain electrode 11 can be formed as the ohmic electrode through the low-temperature process without using an impurity-doped layer.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造其中可以通过低温工艺形成欧姆电极而不使用杂质掺杂的碳化硅半导体器件的方法。解决方案：在n + 型衬底1的顶表面侧上形成元件结构和表面电极之后，具有表面粗糙度（Ra）的半导体衬底的反面1b ），使得（100％ - 反射率 - 导磁率）在被照射的激光束的波长处变为≥80％。在已经处理的半导体衬底的反面1b上形成金属薄膜110，使得（100％ - 反射率 - 透射率）在被照射的激光束的波长处变为≥80％时，反向的一侧用激光照射n + 型衬底1的表面1b以形成包括硅化物层111的漏电极11.因此，硅化物层111以相反的方式形成在漏电极11上的侧面，而不对n + 型衬底1进行高温处理。漏电极11可以通过低温工艺形成为欧姆电极，而不使用杂质掺杂层。版权所有（C）2011，JPO＆INPIT

4. 发明专利

JP2009283754A Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：JP2009283754A
公开(公告)日：2009-12-03
申请号：JP2008135282
申请日：2008-05-23
申请人： Denso Corp , 株式会社デンソー
发明人： KAWAI JUN
IPC分类号： H01L21/28 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L21/0485 , H01L21/268 , H01L29/1608
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device can form an ohmic electrode by a low-temperature process without using an ion implantation process. SOLUTION: An element structure and a surface electrode are formed on the front surface side of an n + type substrate 1, and thereafter a polishing process is executed to the back face 1b of the n + type substrate 1 to form minute irregularity on the back face 1b. A metal thin film 110 is formed on the back face 1b with the irregularity formed thereon, and thereafter a drain electrode 11 including a silicide layer 111 is formed by irradiating the back face 1b side of the n + type substrate 1 with laser light in a condition where the product of photon energy and laser output is set to 1,000-8,000 eV mJ/cm 2 . Thereby, the silicide layer 111 can be created in the drain electrode 11 on the n + type substrate 1 without executing a high-temperature process to the n + type substrate 1. Accordingly, the drain electrode 11 can be formed into an ohmic electrode by a low-temperature process without using an ion implantation process. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的方法，可以通过低温工艺形成欧姆电极而不使用离子注入工艺。解决方案：在n + 型基板1的前表面侧上形成元件结构和表面电极，然后对n + 型基板1的背面1b执行抛光处理， SP> + 型基板1，以在背面1b上形成微小的不规则性。在背面1b上形成金属薄膜110，其上形成有凹凸，然后通过照射n + 型的背面1b侧形成包括硅化物层111的漏电极11 在光子能量和激光输出的乘积被设定为1,000-8,000eV mJ / cm 2的条件下，具有激光的衬底1 。由此，可以在n + SP型衬底1上的漏电极11中形成硅化物层111，而不对n 型衬底1执行高温处理。因此，可以通过低温工艺将漏电极11形成为欧姆电极，而不使用离子注入工艺。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2005243366A Transmission type el display device and manufacturing method of same 有权
标题翻译：传输型EL显示装置及其制造方法
公开(公告)号：JP2005243366A
公开(公告)日：2005-09-08
申请号：JP2004050405
申请日：2004-02-25
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI KENICHI , INOUE TAKASHI , OSADA MASAHIKO , KAWAI JUN , HATTORI TAMOTSU , NINOYU HISANORI , SAITO HIDEKI
IPC分类号： A63F5/04 , A63F7/02 , G09F9/30 , H01L27/32 , H05B33/02 , H05B33/04 , H05B33/12 , H05B33/14
摘要： PROBLEM TO BE SOLVED: To provide a transmission EL display device having an inconspicuous end face of a glass substrate.
SOLUTION: The thickness of the transmission type EL display device 1 is regulated by the thicknesses of a first and a second glass substrates 11, 12, since a sum of thicknesses of an EL element, a wiring electrode 121 and conductive particles is not more than several tens of μm. Provided that the thickness of respective glass substrates 11, 12 is d, a part where the glass substrates 11, 12 overlap each other is to be a transparent region with a refractive index of 1.5 and an optical path length of 2d, but a part where they do not overlap is to be a region where glass with a refractive index of 1.5 and a length of d and an air layer with a refractive index of 1 and a length of d overlap each other, so that the difference allows the end face of the first glass substrate to be recognized. With this invention, the end face is made inconspicuous by lessening a region where refractive indices differ in accordance with watching directions, whatever part of the transmission EL display device 1 is looked at.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有玻璃基板的不明显的端面的透射EL显示装置。解决方案：透射型EL显示装置1的厚度由第一和第二玻璃基板11,12的厚度调节，因为EL元件，布线电极121和导电颗粒的厚度之和为不超过几十μm。如果各玻璃基板11,12的厚度为d，则玻璃基板11,12彼此重叠的部分为折射率为1.5，光程长度为2d的透明区域，但是其中它们不重叠的区域是折射率为1.5和长度为d的玻璃和折射率为1且长度为d的空气层彼此重叠的区域，使得该差异允许要识别的第一块玻璃基板。利用本发明，无论透视EL显示装置1的哪个部分被观察，根据观察方向减小折射率不同的区域，使端面变得不显眼。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004234943A Display device 审中-公开
公开(公告)号：JP2004234943A
公开(公告)日：2004-08-19
申请号：JP2003019962
申请日：2003-01-29
申请人： Denso Corp , 株式会社デンソー
发明人： SAKAI KENICHI , SOFUE SUSUMU , KAWAI JUN
IPC分类号： H05B33/02 , G09F9/30
摘要： PROBLEM TO BE SOLVED: To provide an EL display panel equipped with a pair of glass plates bonded to each other with an EL (electroluminescent) element interposed between, restrained from the generation of glass crack due to microcracks without chamfering. SOLUTION: Of the panel S1, provided with a pair of glass plates 11, 20 bonded to each other in facing, of which the inner faces 11b, 20b are adhered to each other at least at their peripheries with an adhesive 30n and EL elements (17) are arranged on the inner faces 11b, 20b of the pair of the glass plates 11, 20. The glass plates 11, 20 are so arranged that scribed faces of the glass plates 11, 20 are the inner faces 11b, 20b. COPYRIGHT: (C)2004,JPO&NCIPI

7. 发明专利

JP2014204026A 炭化珪素半導体装置およびその製造方法有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2014204026A
公开(公告)日：2014-10-27
申请号：JP2013080433
申请日：2013-04-08
申请人：株式会社デンソー , Denso Corp
发明人： KAWAI JUN , SUGIURA KAZUHIKO
IPC分类号： H01L29/417 , H01L21/28 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L29/1608 , H01L21/02529 , H01L21/0485 , H01L21/268 , H01L21/306 , H01L29/45 , H01L29/66068 , H01L29/7828
摘要：【課題】不純物のイオン注入工程やオーミック電極が形成される下地表面に凹凸を形成するための工程を行う必要がなく、シンタリングによって終端効果も無くならないようにする。【解決手段】n+型基板1の裏面1bに、ポーリングの電気陰性度がSiよりも大きく、かつ、Siとの結合エネルギーがSi−Hの結合エネルギーよりも大きな元素を終端させるための表面処理工程を行うる。そして、このような表面処理工程を行った後で、ドレイン電極11を形成する。これにより、裏面1b上に形成されるドレイン電極11を良好なオーミック特性を有するオーミック電極にすることができる。【選択図】図1
摘要翻译：要解决的问题：为了避免进行杂质离子注入工艺和在其上形成欧姆电极的基底表面上形成不规则性的过程，并且防止终止效应被烧结中和的必要性。解决方案：硅碳化物半导体器件制造方法包括：在n型衬底1的背面1b上执行用于端接具有大于Si的轮询中的电负性的元素和与Si的键合能的元素的表面处理过程大于Si- H; 然后在进行表面处理处理之后形成漏电极11。这可以使形成在背面1b上的漏电极11成为具有良好的欧姆特性的欧姆电极。

8. 发明专利

JP2013214657A Silicon carbide semiconductor device and manufacturing method of the same 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：JP2013214657A
公开(公告)日：2013-10-17
申请号：JP2012084901
申请日：2012-04-03
申请人： Denso Corp , 株式会社デンソー
发明人： KAWAI JUN , TOKURA NORIHITO , SUGIURA KAZUHIKO
IPC分类号： H01L21/28 , H01L21/336 , H01L29/12 , H01L29/417 , H01L29/78
CPC分类号： H01L21/0485 , H01L21/0455 , H01L21/22 , H01L29/1608 , H01L29/66068 , H01L29/7827
摘要： PROBLEM TO BE SOLVED: To form further lower resistance ohmic junction without performing impurity ion implantation.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises depositing an impurity-containing metallic thin film 12 on a rear face 1b of an ntype substrate 1 and subsequently performing laser annealing by irradiation of laser beams on the metallic thin film 12. By such a process, the impurity contained in the metallic thin film 12 is diffused and a drain electrode 11 having a metal reaction layer composed of a metal silicide and a metal carbide obtained by reaction between metal atoms composing the metallic thin film 12 and SiC can be formed. Such drain electrode 11 can form ohmic junction at junction with the rear face 1b of the ntype substrate 1 by a structure where an impurity is entrapped into the metal reaction layer. Accordingly, low resistance ohmic junction can be formed without performing impurity ion implantation.
摘要翻译：要解决的问题：在不进行杂质离子注入的情况下形成更低的电阻欧姆结。解决方案：一种碳化硅半导体器件制造方法，包括在n型衬底1的背面1b上沉积含杂质的金属薄膜12，随后执行通过在金属薄膜12上照射激光来进行激光退火。通过这样的处理，金属薄膜12中所含的杂质被扩散，并且得到具有由金属硅化物和金属碳化物构成的金属反应层的漏电极11 可以形成构成金属薄膜12的金属原子与SiC之间的反应。这种漏电极11可以通过其中杂质被俘获到金属反应层中的结构而与n型衬底1的背面1b结合形成欧姆结。因此，可以在不进行杂质离子注入的情况下形成低电阻欧姆结。

9. 发明专利

JP2013077593A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2013077593A
公开(公告)日：2013-04-25
申请号：JP2011214899
申请日：2011-09-29
申请人： Denso Corp , 株式会社デンソー
发明人： KAWAI JUN , KONDO TETSUJI , SUGIURA KAZUHIKO , KATO NOBUYUKI
IPC分类号： H01L21/28 , H01L21/301 , H01L21/336 , H01L29/12 , H01L29/78
CPC分类号： H01L21/8213 , H01L21/0485 , H01L21/268 , H01L21/6836 , H01L29/1608 , H01L29/45 , H01L29/66068 , H01L29/7828 , H01L2221/68327
摘要： PROBLEM TO BE SOLVED: To enable inhibition of an occurrence of chipping when forming an ohmic electrode by laser annealing.SOLUTION: In a semiconductor device manufacturing method, laser annealing when forming a drain electrode 11 on a rear face 1b side of an ntype substrate 1 is performed only in a chip and not performed in a dicing region. As a result, because a region where a laser scar is not left is to be diced when performing dicing with a dicing blade 60, dicing can be performed without being affected by the laser scar, thereby to enable inhibition of an occurrence of chipping.

10. 发明专利

JP2011171551A Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：JP2011171551A
公开(公告)日：2011-09-01
申请号：JP2010034595
申请日：2010-02-19
申请人： Denso Corp , Toyota Central R&D Labs Inc , Toyota Motor Corp , トヨタ自動車株式会社 , 株式会社デンソー , 株式会社豊田中央研究所
发明人： FUJIWARA HIROKAZU , KONISHI MASAKI , KATSUNO TAKASHI , WATANABE YUKIHIKO , SOEJIMA SHIGEMASA , KAWAI JUN , YAMAMOTO TAKEO , ENDO TAKESHI
IPC分类号： H01L21/28 , H01L21/268 , H01L21/304 , H01L21/336 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872
CPC分类号： H01L21/268 , C21D1/09 , C22F1/10 , H01L21/0485 , H01L21/0495 , H01L21/324 , H01L21/67115 , H01L29/0615 , H01L29/0619 , H01L29/1095 , H01L29/1608 , H01L29/45 , H01L29/47 , H01L29/6606 , H01L29/66068 , H01L29/7811 , H01L29/7813 , H01L29/872
摘要： PROBLEM TO BE SOLVED: To produce a silicon carbide semiconductor device by a manufacturing method to previously execute a front surface structure forming step and then execute a rear surface structure forming step and also assure characteristics of the silicon carbide semiconductor device.
SOLUTION: The method of manufacturing silicon carbide semiconductor device including a front surface electrode and a rear surface electrode includes the front surface structure forming step and the rear surface structure forming step. The front surface structure forming step includes a front surface electrode material layer forming step to form a front surface electrode material layer as the front surface electrode material in contact with a semiconductor substrate and a first annealing step to execute an annealing process to the front surface electrode material layer. The rear surface structure forming step includes a rear surface electrode material layer forming step to form the rear surface electrode material layer as the rear surface electrode layer material in contact with the semiconductor substrate, a second annealing step to achieve ohmic contact between the rear surface electrode material layer and the semiconductor substrate through laser irradiation to the rear surface electrode material layer, and a rear surface structure forming step to be executed after the front surface structure forming step.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了通过制造方法制造碳化硅半导体器件，以预先执行前表面结构形成步骤，然后执行后表面结构形成步骤，并且还确保碳化硅半导体器件的特性。解决方案：制造包括前表面电极和后表面电极的碳化硅半导体器件的方法包括前表面结构形成步骤和后表面结构形成步骤。前表面结构形成步骤包括：前表面电极材料层形成步骤，用于形成作为与半导体衬底接触的正面电极材料的正面电极材料层，以及对前表面电极执行退火处理的第一退火步骤材料层。后表面电极材料层形成步骤包括：背面电极材料层形成步骤，用于形成背面电极材料层作为与半导体衬底接触的背面电极层材料;第二退火步骤，用于实现后表面电极之间的欧姆接触材料层和半导体衬底通过激光照射到后表面电极材料层，以及后表面结构形成步骤，以在前表面结构形成步骤之后执行。版权所有（C）2011，JPO＆INPIT

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