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1. 发明专利

JP2012222291A Semiconductor package 审中-公开
标题翻译：半导体封装
公开(公告)号：JP2012222291A
公开(公告)日：2012-11-12
申请号：JP2011089286
申请日：2011-04-13
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , KIKUCHI MASAO
IPC分类号： H01L23/36
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor package that allows improving reliability.SOLUTION: A semiconductor element 2a is mounted on a heat spreader 1a. A semiconductor element 2b is mounted on a heat spreader 1b. One end of a lead terminal 5b is bonded to the heat spreader 1a. The other end of the lead terminal 5b is bonded to the semiconductor element 2b. A molding resin 4a seals a part of the heat spreader 1a and the semiconductor element 2a. A molding resin 4b seals a part of the heat spreader 1b and the semiconductor element 2b. The molding resin 4b is separated by the molding resin 4a.
摘要翻译：要解决的问题：提供允许提高可靠性的半导体封装。解决方案：半导体元件2a安装在散热器1a上。半导体元件2b安装在散热器1b上。引线端子5b的一端接合到散热器1a。引线端子5b的另一端接合到半导体元件2b。模制树脂4a密封散热器1a和半导体元件2a的一部分。模制树脂4b密封散热器1b和半导体元件2b的一部分。模制树脂4b被模塑树脂4a分离。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2011086743A Power semiconductor device and method for manufacturing the power semiconductor device 审中-公开
标题翻译：功率半导体器件及其制造功率半导体器件的方法
公开(公告)号：JP2011086743A
公开(公告)日：2011-04-28
申请号：JP2009237974
申请日：2009-10-15
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA YASUSHI , HIRAOKA KOJI , YOSHIMATSU NAOKI
IPC分类号： H01L23/48
CPC分类号： H01L24/73 , H01L24/92 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/73221 , H01L2224/73265 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device, with the shape stability of bonding members between a power semiconductor element and a lead frame improved. SOLUTION: A power semiconductor device 101 includes a power semiconductor element 2; an inner lead 5, having a through-hole 6 disposed in facing to a surface electrode 4 of the power semiconductor element; and a solder 3 bonding the through-hole with the surface electrode. The device is structured so as to have the expression h COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供功率半导体器件，其中功率半导体元件和引线框架之间的接合部件的形状稳定性提高。功率半导体器件101包括功率半导体元件2; 内引线5，具有与功率半导体元件的表面电极4相对配置的通孔6; 以及将通孔与表面电极接合的焊料3。如果内引线和表面电极之间的间隙的高度为h，并且通孔的宽度为L1，则该器件被构造成具有表达式h <（L1 / 2）。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2011035265A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011035265A
公开(公告)日：2011-02-17
申请号：JP2009181689
申请日：2009-08-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA YASUSHI , YOSHIMATSU NAOKI
IPC分类号： H01L23/40 , H01L25/07 , H01L25/18
CPC分类号： H01L2924/0002 , Y02T10/6204 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve spring pressure-application controllability of a semiconductor module cooling device. SOLUTION: A first through-hole 12 is formed at a center part of a semiconductor module 10, and a spring 14 is arranged on the upper surface side thereof. A second through-hole 16 is formed on the spring 14. A cooling device 18 is arranged on the undersurface side of the semiconductor module 10, and a screw hole 20 is formed on the upper surface of the cooling device 18. A spring retainer 22 includes a tubular erect part 24 and a spring contact part 26. The erect part 24 is inserted in the second through-hole 16 of the spring 14. The spring contact part 26 extends outward from the upper end of the erect part 24, and supported by the erect part 24 to keep a certain distance from the upper surface of the semiconductor module 10. The spring 14 is sandwiched between the upper surface of the semiconductor module 10 and the spring contact part 26. A screw 28 is screwed to the screw hole 20 of the cooling device 18 through the first through-hole 12 of the semiconductor module 10 and the inside of the erect part 24, and the semiconductor module 10 and the spring retainer 22 are fixed to the cooling device 18. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提高半导体模块冷却装置的弹簧压力施加控制性。解决方案：第一通孔12形成在半导体模块10的中心部分处，弹簧14布置在其上表面侧。第二通孔16形成在弹簧14上。冷却装置18布置在半导体模块10的下表面侧，并且在冷却装置18的上表面上形成螺纹孔20.弹簧保持器22 包括管状直立部分24和弹簧接触部分26.直立部分24插入到弹簧14的第二通孔16中。弹簧接触部分26从直立部分24的上端向外延伸，并被支撑通过直立部分24与半导体模块10的上表面保持一定距离。弹簧14夹在半导体模块10的上表面和弹簧接触部分26之间。螺钉28被螺纹连接到螺钉孔 20通过半导体模块10的第一通孔12和直立部分24的内部，以及半导体模块10和弹簧保持器22固定在冷却装置18上。版权所有：（C）2011，JPO＆INPIT

4. 发明专利

JP2010114116A Semiconductor device for power 有权
标题翻译：电力半导体器件
公开(公告)号：JP2010114116A
公开(公告)日：2010-05-20
申请号：JP2008282836
申请日：2008-11-04
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA YASUSHI , YOSHIMATSU NAOKI
IPC分类号： H01L23/34 , H01L23/36 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/34 , H01L2224/84801 , H01L2924/00014 , H01L2924/13055 , H01L2924/00 , H01L2224/37099 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device for power that has been miniaturized, as compared with the conventional types. SOLUTION: The semiconductor device for power includes a cooling section 10, a semiconductor module 20 for power, and a wiring member 30. The wiring member includes a metal plate 31 electrically connected to an electrode 22, extending from the semiconductor module for power; and an insulating resin section 32 that is sandwiched by the metal plate and the cooling section, conducts the heat of the metal plate to the cooling section, and is connected to the cooling section. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：与常规类型相比，提供一种小型化的功率的半导体器件。解决方案：用于电力的半导体器件包括冷却部分10，用于电力的半导体模块20和布线部件30.布线部件包括电连接到电极22的金属板31，该电极22从半导体模块延伸，用于功率; 以及由金属板和冷却部夹持的绝缘树脂部32，将金属板的热量导向冷却部，并与冷却部连接。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2009259569A Current breaking device and its manufacturing method 有权
标题翻译：电流破坏器件及其制造方法
公开(公告)号：JP2009259569A
公开(公告)日：2009-11-05
申请号：JP2008106714
申请日：2008-04-16
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YONEDA YUTAKA , HAYASHI KENICHI , NAKAJIMA YASUSHI , YOSHIMATSU NAOKI , KIMOTO NOBUYOSHI
IPC分类号： H01H85/36 , H01H69/02
摘要： PROBLEM TO BE SOLVED: To provide a current breaking device for extinguishing arc discharge surely in a short time, and easily forming a low-melting-point conductor part, as well as its manufacturing method.
SOLUTION: The device is made provided with a first electrode 1, a second electrode 2, a third electrode 3 arranged partly superposed with the second electrode, a flexible conductor 5 with flexibility for connecting the first electrode and the second electrode, a low-melting-point conductor 4 fitted at the superposed part of the second electrode and the third electrode to electrically and mechanically connect the second electrode and the third electrode, and a biasing member 6 deforming the flexible conductor by a biasing force in accordance with softening or melting of the low-melting-point conductor to move the second electrode toward a first electrode side.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种在短时间内确定地熄灭电弧放电的电流断路装置，并且容易地形成低熔点导体部件及其制造方法。解决方案：该器件设置有第一电极1，第二电极2，与第二电极部分重叠的第三电极3，具有用于连接第一电极和第二电极的柔性的柔性导体5，低熔点导体4，其安装在第二电极和第三电极的重叠部分处，以电连接和机械连接第二电极和第三电极;以及偏置构件6，通过根据软化的偏置力使柔性导体变形或熔化低熔点导体以将第二电极移向第一电极侧。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2007273884A Semiconductor device, semiconductor module, and manufacturing method thereof 有权
标题翻译：半导体器件，半导体器件及其制造方法
公开(公告)号：JP2007273884A
公开(公告)日：2007-10-18
申请号：JP2006100371
申请日：2006-03-31
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , SHIRASAWA TAKAAKI
IPC分类号： H01L25/07 , H01L23/40 , H01L23/473 , H01L25/18
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/1815 , H01L2924/30107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To attain miniaturization of a semiconductor device, and to minimize influences upon reliability during miniaturization. SOLUTION: The semiconductor device includes a laminate bus bar 10 including circuit patterns on a front side 10a and a rear side 10b, a first semiconductor module 1a connected to a circuit pattern 11a on the front side 10a, a second semiconductor module 1b connected to a circuit pattern 11b on the rear side 10b, a first cooling plate 20a attached to the first semiconductor module 1a, and a second cooling plate 20a attached to the second semiconductor module. The first semiconductor module 1a and the second semiconductor module 1b are located at approximately counter positions with the laminate bus bar 10 inbetween. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了实现半导体器件的小型化，并且在小型化期间对可靠性的影响最小化。解决方案：半导体器件包括：层叠母线10，其包括前侧10a和后侧10b上的电路图案;连接到正面10a上的电路图案11a的第一半导体模块1a;第二半导体模块1b 连接到后侧10b上的电路图案11b，附接到第一半导体模块1a的第一冷却板20a和附接到第二半导体模块的第二冷却板20a。第一半导体模块1a和第二半导体模块1b位于其间的层叠汇流条10的大致相对位置处。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2014036077A Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2014036077A
公开(公告)日：2014-02-24
申请号：JP2012175661
申请日：2012-08-08
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , KIKUCHI MASAO , USUI OSAMU , MURATA DAISUKE
IPC分类号： H01L23/48
CPC分类号： H01L2224/40 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2224/37099 , H01L2224/37599
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device which can bond an inner lead and a semiconductor element at an intended distance in a height direction from each other in a manufacturing process by a simple structure, and provide a semiconductor device manufacturing method which can bond an inner lead and a semiconductor element at an intended distance in a height direction from each other.SOLUTION: A semiconductor device according to the present embodiment comprises: a metal block 2; a semiconductor element bonded on the metal block 2; and an inner lead 1c bonded on a top face of the semiconductor element. The inner lead 1c includes: a first part 1f extending from a lead frame 1a which supports the inner lead 1c to above the semiconductor element; and a second part 1g extending from above the semiconductor element in a cantilever fashion and projecting outward from the metal block 2 in a planar view by at least more than a thickness of the inner lead 1c. The semiconductor element, a bonded part of the inner lead 1c with the semiconductor element and the second part 1g are encapsulated by a resin 3.
摘要翻译：要解决的问题：提供一种半导体器件，其可以通过简单的结构在制造过程中将内引线和半导体元件在高度方向上的预定距离彼此接合，并且提供可以键合的半导体器件制造方法内引线和半导体元件，其高度方向彼此相对于预定距离。本实施方式的半导体器件包括：金属块2; 结合在金属块2上的半导体元件; 以及接合在半导体元件的顶面上的内引线1c。内引线1c包括：从引线框架1a延伸的第一部分1f，引线框架1a将内引线1c支撑到半导体元件上方; 以及第二部分1g，其以悬臂方式从半导体元件上方延伸，并且在平面视图中从金属块2向外突出至少大于内引线1c的厚度。半导体元件，具有半导体元件的内引线1c和第二部分1g的接合部分被树脂3封装。

8. 发明专利

JP2013157398A Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2013157398A
公开(公告)日：2013-08-15
申请号：JP2012015539
申请日：2012-01-27
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI , USUI OSAMU
IPC分类号： H01L25/07 , H01L21/56 , H01L23/50 , H01L25/18
CPC分类号： H01L2224/49171 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same, capable of preventing thermal interference to a control IC element caused by heat generation when a power semiconductor element is in operation.SOLUTION: A semiconductor device comprises: a first mold part 8 encapsulating power semiconductor elements 1 and 2 by a transfer mold; a second mold part 13 encapsulating a control IC element 9 by the transfer mold; a relay terminal 6 connecting the first mold part and the second mold part; main terminals 4 and 5 for connecting the first mold part and the outside; and a signal terminal 12 for connecting the second mold part and the outside.
摘要翻译：要解决的问题：提供一种半导体器件及其制造方法，能够防止在功率半导体元件工作时由发热引起的对于控制IC元件的热干扰。解决方案：半导体器件包括：第一模具部分8通过转移模具封装功率半导体元件1和2; 通过转移模具封装控制IC元件9的第二模具部分13; 连接第一模具部件和第二模具部件的继电器端子6; 用于连接第一模具部分和外部的主端子4和5; 以及用于连接第二模具部件和外部的信号端子12。

9. 发明专利

JP2012212689A Power semiconductor device having breaking mechanism 审中-公开
标题翻译：具有断路机构的功率半导体器件
公开(公告)号：JP2012212689A
公开(公告)日：2012-11-01
申请号：JP2012162509
申请日：2012-07-23
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： NAKAJIMA YASUSHI , YOSHIMATSU NAOKI , UEDA TETSUYA , YONEDA YUTAKA
IPC分类号： H01H37/76 , H01L23/58
CPC分类号： H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor device equipped with a breaking mechanism that has a thermal fuse which is blown at a low temperature and has a small resistance value.SOLUTION: A breaking mechanism 10 includes: one primary wiring conductor 2 and the other primary wiring conductor 2 provided on the upper side of a substrate 1 and each connected to a prescribed electronic circuit; and heater conductors 4 provided on the primary surface of the substrate 1 so as to generate heat when a current flows therein. The breaking mechanism 10 further includes one low-melting point metal conductor 5 for connecting the one primary wiring conductor 2 to an electrode film 3, and the other low-melting point metal conductor 5 for electrically connecting the other primary wiring conductor 2 to the electrode film 3. Moreover, each of the one low-melting metal conductor 5 and the other low-melting metal conductor 5 has a melting point lower than that of both of the one primary wiring conductor 2 and the other primary wiring conductor 2.
摘要翻译：要解决的问题：提供一种具有断开机构的功率半导体器件，该断开机构具有在低温下被吹制并具有小电阻值的热熔丝。解决方案：断路机构10包括：一个主布线导体2和设置在基板1的上侧并且各自连接到规定的电子电路的另一个主布线导体2; 以及设置在基板1的主表面上的加热器导体4，以便当电流在其中流动时产生热量。断开机构10还包括一个用于将一个一次布线导体2连接到电极膜3的低熔点金属导体5，另一个低熔点金属导体5将另一个初级布线导体2与电极此外，一个低熔点金属导体5和另一个低熔点金属导体5中的每一个的熔点低于一次布线导体2和另一个初次布线导体2的熔点。
版权所有（C）2013，JPO＆INPIT

10. 发明专利

JP2007158156A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2007158156A
公开(公告)日：2007-06-21
申请号：JP2005353247
申请日：2005-12-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： YOSHIMATSU NAOKI
IPC分类号： H05K1/18 , H05K1/02
CPC分类号： H01L2224/32225 , H01L2224/49175 , H01L2224/73265 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small semiconductor module which suppresses cracks in a solder member. SOLUTION: In this semiconductor module 10, a semiconductor mount substrate, comprising an insulating substrate having a metal pattern mounted on the principal and rear surfaces and a semiconductor element connected to the metal pattern mounted on the principal surface, is connected to a metal base plate via the metal pattern mounted on the rear surface. Plural semiconductor mount blocks 16a, 16b are included therein. Metal patterns 24a, 24b mounted on the rear surface of insulating substrates 20a, 20b of plural semiconductor mounting blocks 16a, 16b comprise a common thin metal plate 24, and plural semiconductor mount blocks 16a, 16b are soldered to a metal base plate 18 via the thin metal plate 24. The periphery 34 of the thin metal plate 24 is outside peripheries 36a, 36b of the insulating substrates 20a, 20b of multiple semiconductor mounting blocks 16a, 16b as seen from the stacking direction of the insulating substrates 20a, 20b and the thin metal plate 24. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种抑制焊料部件中的裂纹的小型半导体模块。解决方案：在该半导体模块10中，包括具有安装在主表面和后表面上的金属图案的绝缘基板和连接到安装在主表面上的金属图案的半导体元件的半导体安装基板连接到金属基板通过安装在后表面上的金属图案。其中包括多个半导体安装块16a，16b。安装在多个半导体安装块16a，16b的绝缘基板20a，20b的后表面上的金属图案24a，24b包括公共薄金属板24，并且多个半导体安装块16a，16b经由薄金属板24的周边34是从绝缘基板20a，20b的层叠方向观察的多个半导体安装块16a，16b的绝缘基板20a，20b的外周36a，36b和薄金属板24.版权所有（C）2007，JPO＆INPIT

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