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1. 发明专利

JP2013236258A High frequency power amplifier 审中-公开
标题翻译：高频功率放大器
公开(公告)号：JP2013236258A
公开(公告)日：2013-11-21
申请号：JP2012107593
申请日：2012-05-09
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEHARA HIROAKI , OTSUKA HIROSHI , YAMANAKA KOJI , UCHIDA HIROMITSU , UTSUMI HIROZO
IPC分类号： H03F3/68 , H01P5/19 , H03F3/21 , H03F3/60
摘要： PROBLEM TO BE SOLVED: To provide a high frequency power amplifier that effectively and simply suppresses odd mode oscillation by causing a phase difference of oscillation power and absorbing the oscillation power, and facilitates an adjustment to a boundary length of a slit independently of impedance matching.SOLUTION: The high frequency power amplifier includes an input side slit 10 formed in a line direction in an input distribution line 2, and an input side resistance 11. A phase difference of oscillation power caused between points P1 and P2 can lead to absorption of the oscillation power to effectively and simply suppress odd mode oscillation. Since the input distribution line 2 where the input side slit 10 and the input side resistance 11 are formed is not a line for impedance matching between transistors 5a and 5b unlike input lines 3a and 3b and output lines 7a and 7b, a slit boundary length γ can be easily adjusted independently of impedance matching even after design and manufacture.
摘要翻译：要解决的问题：提供一种高频功率放大器，其通过引起振荡功率的相位差并吸收振荡功率来有效且简单地抑制奇数振荡，并且有助于独立于阻抗匹配来调节狭缝的边界长度。解决方案：高频功率放大器包括在输入分配线2中沿线方向形成的输入侧狭缝10和输入侧电阻11.在点P1和P2之间引起的振荡功率的相位差可导致吸收振荡功率有效简单地抑制奇数振荡。由于形成输入侧狭缝10和输入侧电阻11的输入配线2不像输入线3a，3b以及输出线7a，7b而不是晶体管5a，5b之间的阻抗匹配用线，所以狭缝边界长度γ 即使在设计和制造后，也可以独立于阻抗匹配进行调整。

2. 发明专利

JP2010232614A Semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：半导体激光器及其制造方法
公开(公告)号：JP2010232614A
公开(公告)日：2010-10-14
申请号：JP2009081574
申请日：2009-03-30
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKASE TEI , TADA HITOSHI , MAEHARA HIROAKI , HORIE JUNICHI
IPC分类号： H01S5/22 , H01S5/16 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a monolithic dual-wavelength semiconductor laser having superior operation characteristics.
SOLUTION: A 780 nm wavelength band laser 12 and a 650 nm wavelength band laser 14 are formed on an n-type GaAs substrate 10. A p-type AlGaInP second upper cladding layer 28 of the 780 nm wavelength band laser 12 is etched to an ESL layer 26 to form ridge waveguides 32. A p-type AlGaInP upper cladding layer 40 of the 650 nm wavelength band laser 14 is etched halfway to form ridge waveguides 44. At least on the emission edge of the 650 nm wavelength band laser 14, a window region is formed. The ratio of Al in the p-type AlGaInP upper cladding layer 40 is higher than the ratio of Al of AlGaInP that is a material of the barrier layer and the guide layer of an active layer 38. The refractive index of the p-type AlGaInP upper cladding layer 40 is higher than that of an n-type AlGaInP lower cladding layer 36.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有优异的操作特性的单片双波长半导体激光器。解决方案：在n型GaAs衬底10上形成780nm波长带激光器12和650nm波长带激光器14. 780nm波段激光器12的p型AlGaInP第二上包层28是蚀刻到ESL层26以形成脊状波导32。650nm波长带激光器14的p型AlGaInP上覆层40被半中蚀刻以形成脊波导44。至少在650nm波长带的发射边缘激光器14形成窗口区域。 p型AlGaInP上覆层40中的Al的比例高于作为势垒层的材料的AlGaInP的Al与有源层38的引导层的比率。p型AlGaInP的折射率上覆层40比n型AlGaInP下覆层36高。（C）2011，JPO＆INPIT

3. 发明专利

JP2014222836A 電力増幅器审中-公开
标题翻译：功率放大器
公开(公告)号：JP2014222836A
公开(公告)日：2014-11-27
申请号：JP2013102162
申请日：2013-05-14
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： MAEHARA HIROAKI , OTSUKA HIROSHI , YAMANAKA KOJI , KUWATA EIGO , KOYANAGI MOTOYOSHI
IPC分类号： H03F1/02 , H03F3/21 , H03F3/60 , H03F3/68
摘要：【課題】複数のトランジスタ間の振幅や位相のずれを解消して、効率よく電力を合成することができる電力増幅器を得ることを目的とする。【解決手段】トランジスタ1a〜1dを互い違いに配置し、トランジスタ1a〜1dの配置位置に応じて、ワイヤ6a〜6d,7a〜7dの電気長を変えることで、トランジスタ1a〜1dから信号入力端子4及び信号出力端子5を見た電気長を等しくしている。これにより、トランジスタ1a〜1dの温度差により生じる振幅や位相偏差を解消して、効率よく電力を合成することができる。【選択図】図1
摘要翻译：要解决的问题：提供通过解决多个晶体管之间的幅度和相位的变化来有效地组合功率的功率放大器。解决方案：晶体管1a-1d交错，电线6a-6d，7a-7d的电长度改变根据晶体管1a-1d的配置位置，从晶体管1a-1d观察信号输入端子4和信号输出端子5的长度。这可以解决由晶体管1a-1d之间的温度差引起的振幅和相位差，以有效地组合功率。

4. 发明专利

JP2013115491A Power distributor and power distribution device 有权
标题翻译：电力分配器和电力分配装置
公开(公告)号：JP2013115491A
公开(公告)日：2013-06-10
申请号：JP2011257723
申请日：2011-11-25
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEHARA HIROAKI , OTSUKA HIROSHI , YAMANAKA KOJI , UCHIDA HIROMITSU
IPC分类号： H01P5/12 , H01P1/02 , H01P5/02
摘要： PROBLEM TO BE SOLVED: To obtain a power distributor which improves the amplitude deviation and the phase deviation of signals, on the outside and inside of a line, caused by a corner in the way of the line.SOLUTION: A slit 7a is formed immediately after a corner 3 in an input line 1 from the inside direction of the corner 3, so as to improve the amplitude deviation and phase deviation of signals transmitted to output terminals 6a, 6b, and a slit 7b is formed immediately before a signal branch 4 in the input line 1 to face the slit 7a from the outside direction of the corner 3 so as to improve the amplitude deviation and phase deviation of signals transmitted to the output terminals 6a, 6b. The amplitude deviation and phase deviation of signals being transmitted, caused by the corner 3 provided in the way of the input line 1, can be improved by the slits 7a, 7b.
摘要翻译：要解决的问题：为了获得一种功率分配器，其改善由线路中的拐角引起的线路的外部和内部的信号的振幅偏差和相位偏差。解决方案：从拐角3的内侧方向立即在输入线1的角部3之后形成狭缝7a，从而提高发送到输出端子6a，6b的信号的振幅偏差和相位偏差，在输入线1中的信号分支4之前形成狭缝7b，以从角部3的外侧方向面对狭缝7a，从而改善传输到输出端子6a，6b的信号的振幅偏差和相位偏差。通过狭缝7a，7b可以改善由输入线1所设置的角部3引起的正在传输的信号的振幅偏差和相位偏差。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2009043806A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2009043806A
公开(公告)日：2009-02-26
申请号：JP2007205150
申请日：2007-08-07
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEHARA HIROAKI , NISHIDA TAKEHIRO , OKURA YUJI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To solve a problem that in a semiconductor light emitting device wherein a sub-mount is adhered onto a stem of a package and a semiconductor laser chip is mounted thereupon with a junction down, rotation of polarization is caused by residual stress applied to an active layer of the semiconductor laser chip after assembly owing to a difference in coefficient of linear expansion between a mount portion and the semiconductor laser chip.
SOLUTION: Provided is the semiconductor device having a stable angle of polarization by absorbing and relaxing residual stress applied to a light emission point by a solder layer by increasing a solder thickness below a light emission point of the semiconductor laser chip by forming a recessed portion in the mount portion at a part corresponding to below the light emission point.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：为了解决在半导体发光器件中的副安装件被附着到封装件的杆上并且半导体激光器芯片被安装在其上的问题，结点向下，引起偏振旋转由于安装部分和半导体激光器芯片之间的线性膨胀系数的差异，组装后施加到半导体激光器芯片的有源层的残余应力。解决方案：通过通过将半导体激光器芯片的发光点的焊料厚度增加到低于半导体激光器芯片的发光点的方式，通过吸收并缓和由焊料层施加到发光点的残余应力，提供具有稳定的偏振角的半导体器件，在对应于发光点下方的部分处的安装部分中的凹部。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2017092375A マイクロ波帯・ミリ波帯パッケージ有权
公开(公告)号：JP2017092375A
公开(公告)日：2017-05-25
申请号：JP2015223846
申请日：2015-11-16
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： MIYASHITA MIYO , YAMAMOTO KAZUYA , MAEHARA HIROAKI
IPC分类号： H01L23/02 , H01L23/08
CPC分类号： H01L23/552 , H01L23/481 , H01L23/4924 , H01L23/66 , H01L2223/6616 , H01L2223/6655 , H01L2224/48091 , H01L2924/16195 , H01L2924/00014
摘要：【課題】本発明に係るマイクロ波帯・ミリ波帯パッケージの広帯域化を図る。【解決手段】本発明に係るマイクロ波帯・ミリ波帯パッケージは、半導体素子5を上面に固定した導体ベースプレート1と、導体ベースプレート1上に半導体素子5を囲むように設けられ、導体ベースプレート1と電気的に接続された導体部分2eを有する側壁2と、導体ベースプレート1と側壁2と共に内部空間を形成すべく、側壁2上に設置された誘電体キャップ3と、誘電体キャップ3の外側の面上に設けられた表面金属膜9と、誘電体キャップ3の内側の面上に設けられ、導体ベースプレート1と対向する誘電体キャップ3の面に対して、中心が略一致する第1の裏面金属膜10bと、誘電体キャップ3を貫通するように設けられ、表面金属膜9と第1の裏面金属膜10bとの間及び表面金属膜9と側壁2の導体部分2eとの間をそれぞれ電気的接続する複数のビア11と、を備える。【選択図】図6

7. 发明专利

JP2014112789A High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：JP2014112789A
公开(公告)日：2014-06-19
申请号：JP2012266411
申请日：2012-12-05
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： MAEHARA HIROAKI , YAMANAKA KOJI , UCHIDA HIROMITSU , OTSUKA HIROSHI , MINAMIDE YOSHINOBU , NISHIHARA ATSUSHI
IPC分类号： H03F3/60 , H01P5/02 , H03F3/195 , H03F3/24 , H03F3/68
摘要： PROBLEM TO BE SOLVED: To provide a high frequency power amplifier that enables a resonance frequency to be substantially shifted by a substantial change in the length of stubs while ensuring an equivalent capacitance formed by the stubs.SOLUTION: In a matching circuit 2, a plurality of large adjusting stubs 3 connected by wires 5 are connected in a closed loop in part or in whole. The plurality of large adjusting stubs 3 in the closed loop connection provide the same equivalent capacitance as in a series connection, and at the same time, the stubs have a shorter electrical length and thus provide a higher resonance frequency than in the series connection. The resonance frequency can thus be substantially shifted by a substantial change in the length of the stubs while the equivalent capacitance formed by the stubs is ensured.
摘要翻译：要解决的问题：提供一种高频功率放大器，其能够在确保由短截线形成的等效电容的同时，使共振频率基本上由短截线长度的实质变化而移位。解决方案：在匹配电路2中，多个通过线5连接的大的调整短截线3以部分或整体的闭环连接。闭环连接中的多个大的调整短截线3提供与串联连接相同的等效电容，并且同时，短截线具有较短的电长度，从而提供比串联连接更高的谐振频率。因此，通过确保短截线形成的等效电容，共振频率基本上会偏移短截线长度的实质变化。

8. 发明专利

JP2012244384A High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：JP2012244384A
公开(公告)日：2012-12-10
申请号：JP2011112224
申请日：2011-05-19
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： WATANABE SHINTARO , IYOMASA KAZUHIRO , MAEHARA HIROAKI , TAKAAI JUN
IPC分类号： H03F3/189 , H03F3/20
CPC分类号： H03F1/56 , H03F1/0277 , H03F3/19 , H03F3/72 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/411 , H03F2203/7215 , H03F2203/7221 , H03F2203/7236 , H03F2203/7239 , H03G3/3042
摘要： PROBLEM TO BE SOLVED: To provide a high frequency power amplifier that improves the degree of freedom in circuit design by enabling impedance matching switching and path switching simultaneously.SOLUTION: A transistor Tr1 amplifies an externally input high frequency signal. A transistor Tr2 amplifies an output signal of the transistor Tr1. A transistor Tr3 is connected in parallel with the transistor Tr1 to amplify the externally input high frequency signal. A switching element SW1 is connected between an output of the transistor Tr1 and an input of the transistor Tr2. A switching element SW2 is connected between an output of the transistor Tr3 and the switching element SW1. Switching elements SW3 and SW4 are connected in series between the output of the transistor Tr1 and the switching element SW2, and an output of the transistor Tr2. A capacitor C1 is connected between the switching element SW3 and the switching element SW4.
摘要翻译：要解决的问题：提供一种通过同时实现阻抗匹配切换和路径切换来提高电路设计自由度的高频功率放大器。解决方案：晶体管Tr1放大外部输入的高频信号。晶体管Tr2放大晶体管Tr1的输出信号。晶体管Tr3与晶体管Tr1并联连接，以放大外部输入的高频信号。开关元件SW1连接在晶体管Tr1的输出端和晶体管Tr2的输入端之间。开关元件SW2连接在晶体管Tr3的输出端和开关元件SW1之间。开关元件SW3和SW4串联连接在晶体管Tr1的输出端和开关元件SW2之间，以及晶体管Tr2的输出端。电容器C1连接在开关元件SW3和开关元件SW4之间。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2014220751A 高調波処理回路有权
标题翻译：谐波加工电路
公开(公告)号：JP2014220751A
公开(公告)日：2014-11-20
申请号：JP2013100391
申请日：2013-05-10
申请人：三菱電機株式会社 , Mitsubishi Electric Corp
发明人： KOSAKA NAOKI , YAMAGUCHI YUTARO , KOMARU RYUTA , KUWATA EIGO , MAEHARA HIROAKI , OTSUKA HIROSHI , UCHIDA HIROMITSU , OISHI TOSHIYUKI , YAMANAKA KOJI , TARUI YUKINORI , KIMURA MAKOTO
IPC分类号： H03F3/60
CPC分类号： H03F3/60
摘要：【課題】外部負荷の2倍波反射係数に対する2倍波負荷インピーダンスへの影響を小さく抑え、効率の低下を抑制し、ロバストかつ広帯域性を実現する高調波処理回路を得る。【解決手段】FET1のゲートに接続され、線路長(λ/4+α@2fo)を有する伝送線路2と、伝送線路2のFET1側に接続され、線路長(
摘要翻译：要解决的问题：提供一种谐波处理电路，其通过相对于外部负载的二次反射系数减小对二次负载阻抗的影响来实现鲁棒且宽带特性，并且抑制效率的降低。解决方案：谐波处理电路包括：连接到FET1的栅极并且具有（λ/ 4 +α@ 2fo）的线路长度的传输线2; 连接在传输线2侧与FET 1并具有（<λ/ 4 @ 2fo）的线路长度的传输线3; 连接在与FET1相反的传输线2侧并具有（λ/ 4 @ 2fo）的线长的传输线4; 以及连接在传输线2和传输线路4之间的电阻器5.这可以降低对外部的二阶反射系数＆Ggr; L（2fo）对二阶负载阻抗＆Ggr; fet（2fo）的影响加载并抑制效率的降低，以实现鲁棒和宽带特性。

10. 发明专利

JP2011023628A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2011023628A
公开(公告)日：2011-02-03
申请号：JP2009168602
申请日：2009-07-17
申请人： Mitsubishi Electric Corp , 三菱電機株式会社
发明人： TAKASE TEI , TADA HITOSHI , MAEHARA HIROAKI , HISA YOSHIHIRO , SAKUMA HITOSHI
IPC分类号： H01S5/022
CPC分类号： H01S5/02272 , G11B7/1275 , G11B2007/0006 , H01S5/0224 , H01S5/22 , H01S5/4031 , H01S5/4087 , H01S2301/14
摘要： PROBLEM TO BE SOLVED: To reduce assembling stress caused between a laser chip and a sub-mount to make small a polarization angle of two lasers in a semiconductor laser device, wherein a two-wavelength semiconductor laser chip is junction-down bonded on the sub-mount.
SOLUTION: SnAg solder is used to bond the two-wavelength semiconductor laser chip on the sub-mount. In this case, for each of two lasers, the ratio of a distance between the center of a waveguide and the end of a bonding surface between the sub-mount on the chip center side and the two-wavelength semiconductor laser chip and a distance between the center of the waveguide, and a junction surface between the sub-mount on the chip end side and the two-wavelength semiconductor laser chip is set to 0.69 or above and 1.46 or below.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了减少半导体激光器件中激光芯片和副安装座之间产生的组装应力，使得两个激光器的偏振角小，其中双波长半导体激光器芯片是结合下降的在子座上。
解决方案：SnAg焊料用于将双波长半导体激光芯片粘合在子安装座上。在这种情况下，对于两个激光器中的每一个，波导的中心与芯片中心侧的子座之间的接合表面的端部与双波长半导体激光器芯片之间的距离的比率和波导的中心和芯片端侧的子安装座与双波长半导体激光器芯片之间的接合面设定为0.69以上且1.46以下。版权所有（C）2011，JPO＆INPIT

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