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1. 发明专利

JP2014233383A 光触媒殺菌消臭装置审中-公开
标题翻译：光化灭菌灭菌装置
公开(公告)号：JP2014233383A
公开(公告)日：2014-12-15
申请号：JP2013115778
申请日：2013-05-31
申请人：シャープ株式会社 , Sharp Corp
发明人： YAOI YOSHIFUMI , SHIBATA AKIHIDE , KOMIYA KENJI , SATO TAKUYA , WATANABE KEIJI , SHIOMI TAKESHI , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： A61L9/00 , B01D53/86 , B01J35/02 , H01L33/00 , H01L33/50
摘要：【課題】発光ダイオードからの紫外線を光触媒に略均一に照射して、光触媒の活性化を均一にして、光触媒による殺菌、消臭効果を均一にして、殺菌消臭効果がたかく、かつ、紫外線による部品の劣化が殆どなくて信頼性の高い光触媒殺菌消臭装置を提供すること。【解決手段】光触媒殺菌消臭装置は、基板11上に面状に分布している無機物質を主成分とする複数の発光ダイオード12を有する面光源10と、上記面光源10からの紫外光Vが照射される光触媒22を有する光触媒部材20とを有する。【選択図】図1
摘要翻译：要解决的问题：提供一种光催化消毒除臭装置，其使光催化剂大致均匀地暴露于来自发光二极管的紫外线，以均匀地活化光催化剂，以实现光催化剂的均匀消毒除臭效果，具有高消毒除臭效果并且具有高可靠性，紫外线引起的部件劣化很少。解决方案：光催化消毒除臭装置包括：具有主要由无机材料构成的多个发光二极管12的表面光源10，以平面形式分布在基板11; 以及具有从表面光源10暴露于紫外线的光催化剂22的光催化部件20。

2. 发明专利

JP2014072215A Display device 有权
标题翻译：显示设备
公开(公告)号：JP2014072215A
公开(公告)日：2014-04-21
申请号：JP2012214636
申请日：2012-09-27
申请人： Sharp Corp , シャープ株式会社
发明人： YAOI YOSHIFUMI , SHIBATA AKIHIDE , KOMIYA KENJI , SATO TAKUYA , WATANABE KEIJI , SHIOMI TAKESHI , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： H01L33/48 , G09F9/33 , H01L33/24
摘要： PROBLEM TO BE SOLVED: To provide a display device capable of being manufactured through a small number of process steps, thereby capable of achieving high yield.SOLUTION: In an LED display, first and second light emitting diodes (5, 6) which have different electrical connection polarities each other relative to first and second electrodes (2, 3) are arranged in a matrix form on a substrate (1) in a state where the first and second light emitting diodes (5, 6) are mingled at random while the polarities are not aligned. When a solution including a plurality of the light emitting diodes (5, 6) are coated on the substrate (1) and a voltage is applied between the first and second electrodes (2, 3), the light emitting diodes (5, 6) can be electrically connected to the first and second electrodes (2, 3).
摘要翻译：要解决的问题：提供能够通过少量工艺步骤制造的显示装置，从而能够实现高产量。解决方案：在LED显示器中，具有不同的第一和第二发光二极管（5,6）在第一和第二发光二极管（5,6）随机混合的状态下，相对于第一和第二电极（2,3）的电连接极性以矩阵形式布置在衬底（1）上，而极性不一致。当包括多个发光二极管（5,6）的溶液涂覆在基板（1）上并且在第一和第二电极（2,3）之间施加电压时，发光二极管（5,6）可以电连接到第一和第二电极（2,3）。

3. 发明专利

JP2014055979A Electric field generation device and electric field generation method 审中-公开
标题翻译：电场生成装置和电场生成方法
公开(公告)号：JP2014055979A
公开(公告)日：2014-03-27
申请号：JP2013254084
申请日：2013-12-09
申请人： Sharp Corp , シャープ株式会社
发明人： SHIBATA AKIHIDE , KOMIYA KENJI , NEGISHI AKIRA , KOTAKI HIROSHI
IPC分类号： G01N27/00 , G01N27/447
摘要： PROBLEM TO BE SOLVED: To suppress corrosion of an electrode by suppressing the occurence of electrolysis and electrochemical reaction of a liquid when generating an electric field in one direction in the liquid.SOLUTION: A suspended material moving device includes: a vessel in which a liquid having a material suspended therein is injected; first and second electrodes which are arranged with a prescribed space therebetween so as to be at least partially immersed in the liquid injected to the vessel; and an AC generator which is connected to the first and second electrodes and applies an asymmetrical AC between both of the electrodes. At least one of the first and second electrodes is covered with an insulation film to be not brought into direct contact with the liquid, and the material suspended in the liquid is moved in one of the direction from the first electrode toward the second electrode and the direction from the second electrode toward the first electrode by the asymmetrical AC applied from the AC generator.
摘要翻译：要解决的问题：通过抑制液体在一个方向上产生电场时电解的发生和液体的电化学反应来抑制电极的腐蚀。解决方案：悬浮材料移动装置包括：容器，其中液体注入悬浮在其中的材料; 第一和第二电极，其间具有规定的间隔，以至少部分地浸入注入到容器中的液体中; 以及交流发电机，其连接到第一和第二电极并且在两个电极之间施加不对称的AC。第一电极和第二电极中的至少一个被绝缘膜覆盖以不与液体直接接触，并且悬浮在液体中的材料在从第一电极朝向第二电极的方向中的一个方向上移动，并且通过从交流发电机施加的不对称AC，从第二电极朝向第一电极的方向。

4. 发明专利

JP2013085448A Switching power supply apparatus, and inverter, converter, air conditioner, solar power controller, and motor vehicle using the apparatus 有权
标题翻译：切换电源设备，逆变器，转换器，空调，太阳能电源控制器和电机使用设备
公开(公告)号：JP2013085448A
公开(公告)日：2013-05-09
申请号：JP2012144566
申请日：2012-06-27
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , WAKAO SHUJI , SHIBATA AKIHIDE , IWATA HIROSHI
IPC分类号： H02M3/155 , H02M3/28 , H02M7/48 , H02M7/5387
CPC分类号： H02M1/088 , H02M3/1582 , H02M3/1588 , H02M7/5387 , H02M2001/0051 , Y02B70/1466 , Y02T10/7258
摘要： PROBLEM TO BE SOLVED: To provide a switching power supply apparatus capable of achieving high efficiency and cost reduction.SOLUTION: The inverter includes high breakdown voltage transistors 1, 3, 5, 7 and low breakdown voltage transistors 2, 4, 6, 8. The transistors 1-8 include parasitic diodes 1a-8a. For example, a voltage higher than a threshold voltage is applied to gates of the transistors 1, 3, 5, 7, the transistors 2, 8 are turned off, the transistor 6 is turned on and the transistor 4 turned on/off. Few electric currents run through the parasitic diodes 1a, 3a of the high breakdown voltage transistors 1, 3; therefore, recovery currents of the high breakdown voltage transistors 1, 3 are small.
摘要翻译：解决的问题：提供能够实现高效率和降低成本的开关电源装置。
解决方案：逆变器包括高击穿电压晶体管1,3,5,7和低击穿电压晶体管2,4,6,8。晶体管1-8包括寄生二极管1a-8a。例如，将高于阈值电压的电压施加到晶体管1,3,5,7的栅极，晶体管2,8截止，晶体管6导通，晶体管4导通/截止。几个电流流过高击穿电压晶体管1,3的寄生二极管1a，3a; 因此，高击穿电压晶体管1,3的恢复电流很小。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2013055170A Spontaneous light emitting display and method of manufacturing spontaneous light emitting display 审中-公开
标题翻译：自发发光显示器及制造自发光发光显示器的方法
公开(公告)号：JP2013055170A
公开(公告)日：2013-03-21
申请号：JP2011191295
申请日：2011-09-02
申请人： Sharp Corp , シャープ株式会社
发明人： SHIBATA AKIHIDE , IMAI SHIGENORI , KASAI SHUSUKE , IWATA HIROSHI , NEGISHI SATORU , KOMIYA KENJI , SHIOMI TAKESHI , UEDA YOSHIHIRO , OTA MASATAKA
IPC分类号： H01L33/08 , G09F9/33 , H01L33/10 , H01L33/24
摘要： PROBLEM TO BE SOLVED: To provide a spontaneous light emitting display capable of radiating a larger amount of light out of light emitted by a light emission part in the normal direction of a substrate.SOLUTION: A plurality of columnar light emission parts 104 are disposed on a substrate 101 in a state spaced from each other. Each light emission part 104 is made to have a first conductivity type semiconductor 107 and a second conductivity type semiconductor 108. A low-refractive index member 106 having a refractive index lower than that of the light emission part 104 is disposed so as to come into contact with the side wall of each light emission part 104.
摘要翻译：要解决的问题：提供一种自发发光显示器，其能够在基板的法线方向上由发光部分发出的光中发出较大量的光。解决方案：多个柱状发光部分104以彼此间隔开的状态设置在基板101上。每个发光部分104被制成具有第一导电类型半导体107和第二导电类型半导体108.折射率低于发光部分104的低折射率部件106设置成进入与每个发光部分104的侧壁接触。版权所有：（C）2013，JPO＆INPIT

6. 发明专利

JP2011121154A Method for making rod-like wire 审中-公开
标题翻译：制作类似电线的方法
公开(公告)号：JP2011121154A
公开(公告)日：2011-06-23
申请号：JP2009282675
申请日：2009-12-14
申请人： Sharp Corp , シャープ株式会社
发明人： KOMIYA KENJI , NEGISHI SATORU , SHIBATA AKIHIDE , MORISHITA SATOSHI , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： B82B3/00 , H01L21/20 , H01L21/329 , H01L29/06 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To provide a method for making rod-like wire controllable of the part where the rod-like wire is separated from a substrate, and minimizing the variation of the length of the rod-like wire. SOLUTION: The method for making rod-like wire includes a wire-forming process of forming the rod-like wire 2 made of GaN on the Si substrate 1, and a separation process of separating the rod-like wire 2 from the substrate 1. The separation process includes selective etching for selectively etching the Si substrate 1. The rod-like wire 2 can be easily separated from the substrate 1 on the boundary surface between the substrate 1 and the rod-like wire 2 since the Si substrate 1 and the rod-like wire 2 are made of different materials. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造棒状线的方法，该棒状线可以控制棒状导线与基板分离的部分，并且使棒状线的长度的变化最小化。解决方案：制造棒状导线的方法包括在Si衬底1上形成由GaN制成的棒状导线2的线形成工艺，以及将棒状导线2与分离工艺包括用于选择性蚀刻Si衬底1的选择性蚀刻。由于Si衬底，棒状导线2可以容易地从衬底1和棒状导线2之间的边界面上与衬底1分离杆状线2由不同的材料制成。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2011109063A Method of manufacturing bar-like structure light emitting element and method of manufacturing display device 有权
标题翻译：制造棒状结构发光元件的方法和制造显示装置的方法
公开(公告)号：JP2011109063A
公开(公告)日：2011-06-02
申请号：JP2010176107
申请日：2010-08-05
申请人： Sharp Corp , シャープ株式会社
发明人： NEGISHI SATORU , SHIBATA AKIHIDE , MORISHITA SATOSHI , KOMIYA KENJI , IWATA HIROSHI , TAKAHASHI AKIRA
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L24/95 , H01L2224/95085 , H01L2224/95145 , H01L2924/12041 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a bar-like structure light emitting element with a high degree of freedom to be mounted on an apparatus. SOLUTION: A bar-like n-type semiconductor core 13 is formed on a substrate 11, then, a cylindrical p-type semiconductor layer 14a covering a surface of the semiconductor core 13 is formed. Next, part of a peripheral surface of the semiconductor core 13 is exposed, then the semiconductor core 13 including the exposed part 13a is cut-off from the substrate 11. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有高自由度的棒状结构发光元件来安装在设备上的方法。解决方案：在基板11上形成棒状的n型半导体芯13，然后形成覆盖半导体芯13的表面的圆柱形p型半导体层14a。接下来，露出半导体芯13的外围表面的一部分，然后将包括露出部13a的半导体芯13从基板11切断。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2007288060A Semiconductor storage device, manufacturing method thereof, and portable electronic equipment 有权
标题翻译：半导体存储器件及其制造方法及便携式电子设备
公开(公告)号：JP2007288060A
公开(公告)日：2007-11-01
申请号：JP2006115929
申请日：2006-04-19
申请人： Sharp Corp , シャープ株式会社
发明人： SHIBATA AKIHIDE , IWATA HIROSHI , NAKANO MASAYUKI , KATAOKA KOTARO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device which attains fast writing operation and low-voltage writing operation. SOLUTION: The semiconductor storage device is provided with two second conductive diffusion layers 141 and 142 provided in a first conductive semiconductor layer 101, a channel area provided between the two diffusion layers, a gate electrode 112 provided on the channel area through a gate insulation film 111, gate side wall insulation films 11 and 12 provided on the side walls of the gate electrode 112, and electric charge holders arranged in the gate side wall insulation films and made of material having a function of accumulating the electric charge. The two diffusion layers 141 and 142 are provided so as to overlap with the gate electrode, and impurity concentration which gives the second conductive type of one diffusion layer in the vicinity of the end of the gate electrode is lower than impurity concentration which gives the second conductive type of the other diffusion layer in the vicinity of the end of the gate electrode. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种获得快速写入操作和低电压写入操作的半导体存储装置。解决方案：半导体存储装置设置有设置在第一导电半导体层101中的两个第二导电扩散层141和142，设置在两个扩散层之间的沟道区，设置在沟道区上的栅电极112，栅极绝缘膜111，设置在栅电极112的侧壁上的栅极侧壁绝缘膜11和12，以及布置在栅极侧壁绝缘膜中并由具有累积电荷的功能的材料制成的电荷保持器。两个扩散层141和142被设置为与栅电极重叠，并且在栅电极的端部附近给出第一导电类型的一个扩散层的杂质浓度低于给出第二扩散层的杂质浓度在栅电极的端部附近的另一扩散层的导电型。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2004349355A Semiconductor storage device, its redundancy circuit, and portable electronic equipment 审中-公开
标题翻译：半导体存储设备，其冗余电路和便携式电子设备
公开(公告)号：JP2004349355A
公开(公告)日：2004-12-09
申请号：JP2003142644
申请日：2003-05-20
申请人： Sharp Corp , シャープ株式会社
发明人： YAOI YOSHIFUMI , IWATA HIROSHI , SHIBATA AKIHIDE , MORIKAWA YOSHINAO , NAWAKI MASARU
IPC分类号： G11C16/04 , G11C7/00 , G11C16/02 , G11C16/06 , G11C16/22 , G11C29/00 , G11C29/04 , H01L21/82 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792
CPC分类号： G11C29/838 , G11C16/0475 , G11C16/22 , G11C29/785 , G11C29/787 , G11C29/789 , H01L29/42332 , H01L29/7887 , H01L29/7923
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device that single-chip is miniaturized easily for a redundancy circuit such as a single-chip memory used in the semiconductor device, and also to provide portable electronic equipment. SOLUTION: The semiconductor storage device has a plurality of memory elements 1, and the redundancy circuit. The memory elements are constituted of a gate electrode 104 formed on a semiconductor layer 102 through a gate insulating film 103, a channel region disposed under the gate electrode 104, diffusion regions 107a and 107b formed on both sides of the channel region and having conductivity opposite to that of the channel region, and a memory function group 109 having a charge holding function on both sides of the gate electrode 104. The redundancy circuit is provided with an addressing means containing a plurality of redundancy lines and related cells and used for single chip memory. A decoder for selecting redundancy rows is selected based on an address signal, and the selected decoder is programmed. The redundancy circuit does not require any additional package pin, and programming is executed after packaging. The semiconductor storage device contains a means which constantly inactivates the further programming of the redundancy circuit for preventing the unprepared programming of the redundancy circuit by users. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种对于半导体装置中使用的诸如单芯片存储器之类的冗余电路容易地使单片小型化的半导体存储装置，并且还提供便携式电子设备。解决方案：半导体存储装置具有多个存储元件1和冗余电路。存储元件由通过栅极绝缘膜103形成在半导体层102上的栅电极104，设置在栅电极104下方的沟道区域，形成在沟道区两侧的扩散区107a和107b构成，并具有导电性相反以及在栅极电极104的两侧具有电荷保持功能的存储功能组109.冗余电路设置有包含多条冗余线和相关单元并用于单芯片的寻址装置记忆。基于地址信号选择用于选择冗余行的解码器，并且对所选择的解码器进行编程。冗余电路不需要额外的封装引脚，封装后执行编程。半导体存储装置包含一种不断地使冗余电路的进一步编程失效的装置，用于防止用户对冗余电路的无准备编程。版权所有（C）2005，JPO＆NCIPI

10. 发明专利

JP2004349353A Semiconductor storage device, its operating method, and portable electronic equipment 审中-公开
公开(公告)号：JP2004349353A
公开(公告)日：2004-12-09
申请号：JP2003142600
申请日：2003-05-20
申请人： Sharp Corp , シャープ株式会社
发明人： IWATA HIROSHI , SHIBATA AKIHIDE
IPC分类号： G11C16/04 , G11C16/02 , G11C16/06 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a storage element can be miniaturized and, at the same time, which can be reduced in manufacturing cost, because an insulator separating a channel region and a word electrode from each other is formed in a separated state and a short channel effect can be suppressed easily by reducing the thickness of the insulator. SOLUTION: In the semiconductor storage device, a plurality of memory elements which are composed of field effect transistors are formed in an active region and disposed in a matrix-like state. The memory elements are formed on parts of word lines 1104 formed as gate electrodes on a semiconductor substrate 1101 through gate insulating films 1103 and on the lateral sides of the gate electrodes; and contain memory function groups 1105a and 1105b having charge holding functions, channel regions 1110 disposed under the gate insulating films 1103, and diffusion regions 1107 disposed on both sides of the channel regions 1110. In addition, two memory elements adjoining each other in the same row own jointly the diffusion region 1107 disposed in the area between the gate electrodes of the memory elements. Moreover, two memory elements adjoining each other in the same column also own jointly the diffusion region 1107 disposed in the area between the gate electrodes of the memory elements. COPYRIGHT: (C)2005,JPO&NCIPI

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