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1. 发明授权

KR101074079B1 반도체 발광 소자 失效
标题翻译：半导体发光器件
公开(公告)号：KR101074079B1
公开(公告)日：2011-10-17
申请号：KR1020100003787
申请日：2010-01-15
申请人： (주)더리즈
发明人： 진용성 , 배덕규
IPC分类号： H01L33/36 , H01L33/38
摘要： 전극구조개선을통해전류밀도분포를균일하게하여고휘도를구현할수 있는반도체발광소자를제공한다. 본발명에따른반도체발광소자는, 기판, 상기기판상에순차형성된 n형반도체층, 활성층및 p형반도체층, 상기 p형반도체층가장자리상에형성된 p형전극패드를포함하는 p형전극, 및상기 p형전극패드반대편에서상기 n형반도체층상에형성된 n형전극패드를포함하는 n형전극을포함하고, 상기 p형전극은상기 p형전극패드로부터뻗어나와상기 n형전극패드를둘러싸면서상기 p형전극패드쪽으로형성된 p형핑거부를포함하고, 상기 n형전극은상기 n형전극패드로부터뻗어나와상기 p형핑거부의단부를둘러싸면서상기 n형전극패드쪽으로형성된 n형핑거부를포함한다.

2. 发明授权

KR101091048B1 반도체 발광 소자 失效
标题翻译：半导体发光器件
公开(公告)号：KR101091048B1
公开(公告)日：2011-12-08
申请号：KR1020110059458
申请日：2011-06-20
申请人： (주)더리즈
发明人： 배덕규
IPC分类号： H01L33/36 , H01L33/46
CPC分类号： H01L33/405 , H01L33/46 , H01L2924/12041
摘要： PURPOSE: A semiconductor light emitting device is provided to obtaining the high luminance of an element by improving the reflectance of the light advancing towards an N type electrode by forming a metal layer with high reflectivity in the circumference of a rest n-type electrode except for an area which is bonded in a wire. CONSTITUTION: An epi layer is laminated on a substrate(102). The epi layer comprises an n-type semiconductor layer(103), an active layer(104), and a p-type semiconductor layer(105). A mesa structure(106) is formed in a part of the p-type semiconductor layer, the n-type semiconductor layer, and the active layer. A buffer layer is formed between the substrate and the n-type semiconductor layer. A transparent electrode is formed between the p-type semiconductor layer and the p-type electrode.
摘要翻译：目的：提供一种半导体发光器件，用于通过在静止n型电极的周围形成具有高反射率的金属层，通过提高朝向N型电极的光的反射率来获得元件的高亮度，除了焊接在电线中的区域。构成：将外延层层叠在基板（102）上。外延层包括n型半导体层（103），有源层（104）和p型半导体层（105）。在p型半导体层，n型半导体层和有源层的一部分中形成台面结构（106）。在衬底和n型半导体层之间形成缓冲层。在p型半导体层和p型电极之间形成透明电极。

3. 发明授权

KR101068001B1 반도체 발광소자 失效
标题翻译：半导体发光元件
公开(公告)号：KR101068001B1
公开(公告)日：2011-09-26
申请号：KR1020110059761
申请日：2011-06-20
申请人： (주)더리즈
发明人： 배덕규 , 여환국
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/38 , H01L2924/12041
摘要： 발광효율이 높은 반도체 발광소자가 제안된다. 제안된 반도체 발광소자는 n형 반도체층, 활성층 및 p형 반도체층이 순차적으로 형성된 기판과 n형 반도체층, 활성층 및 p형 반도체층의 일부가 제거되어 n형 반도체층이 노출된 영역에 형성된 n전극 및 p형 반도체층 상에 형성된 p전극을 포함한다. p전극은 p전극패드, 및 p전극패드로부터 n전극을 향하여 연장된 p전극아암을 포함하고, n전극은 n전극패드, 및 n전극패드로부터 p전극으로 향하여 연장되면서, p전극아암과 서로 교번하여 형성된 제1-n전극아암과 p전극패드와 반대방향으로 연장된 제2-n전극아암을 포함한다.
摘要翻译：提出了具有高发光效率的半导体发光器件。提出的半导体发光器件包括：衬底，其中依次形成n型半导体层，有源层和p型半导体层，n型半导体层，有源层的一部分和p型半导体层，电极和在p型半导体层上形成的p电极。 p电极包括p电极焊盘和从p电极焊盘向n电极延伸的p电极臂，n电极从n电极焊盘和n电极焊盘向p电极延伸，并且第二n电极臂沿着与p电极焊盘相反的方向延伸。

4. 发明授权

KR101066286B1 발광소자 失效
公开(公告)号：KR101066286B1
公开(公告)日：2011-09-20
申请号：KR1020100090373
申请日：2010-09-15
申请人： (주)더리즈
发明人： 배덕규
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/382 , H01L33/387
摘要： 광추출효율이 높은 발광소자가 제안된다. 제안된 발광소자는 제1반도체층, 활성층, 제2반도체층, 제1반도체층 상의 제1전극부 및 제2반도체층 상의 제2전극부를 포함하는 발광소자로서, 제1전극부 및 제2전극부 중 적어도 하나는 전류분산을 위한 전극아암 및 제1반도체층 또는 제2반도체층이 노출되는 광추출부를 포함하는 외부전원과 연결되는 전극패드를 포함한다.

5. 发明公开

KR1020130057835A 질화갈륨계 반도체 발광소자 및 그의 제조방법 无效
标题翻译：基于氮化镓的化合物半导体发光器件及其制造方法
公开(公告)号：KR1020130057835A
公开(公告)日：2013-06-03
申请号：KR1020110123786
申请日：2011-11-24
申请人： (주)더리즈
发明人： 배덕규
IPC分类号： H01L33/20 , H01L33/16 , H01L21/78
CPC分类号： H01L33/16 , H01L33/0095 , H01L33/32
摘要： PURPOSE: A gallium nitride-based compound semiconductor light emitting device and a manufacturing method thereof are provided to restrain light absorption by minimizing the generation of a slag due to laser scribing. CONSTITUTION: An n-GaN layer(120), an active layer(130), and a p-GaN layer(140) are successively formed on a sapphire substrate(110). Scribing surfaces and cleavage surfaces are formed at the sides of the sapphire substrate. The heights of scribing surfaces are different. One side of the sapphire substrate is a crystalline plane. At least two sides of the sapphire substrate have different crystalline planes.
摘要翻译：目的：提供一种氮化镓基化合物半导体发光器件及其制造方法，通过使由于激光划线引起的炉渣产生最小化来抑制光吸收。构成：在蓝宝石衬底（110）上依次形成n-GaN层（120），有源层（130）和p-GaN层（140）。在蓝宝石衬底的侧面形成刻划表面和裂开表面。划线表面的高度不同。蓝宝石衬底的一侧是晶面。蓝宝石衬底的至少两面具有不同的晶面。

6. 发明授权

KR101058316B1 반도체 발광소자 失效
标题翻译：半导体发光器件
公开(公告)号：KR101058316B1
公开(公告)日：2011-08-22
申请号：KR1020110059764
申请日：2011-06-20
申请人： (주)더리즈
发明人： 배덕규 , 여환국
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/38 , H01L2924/12041
摘要： PURPOSE: A semiconductor light emitting device is provided to minimize an area of electrodes and to supply the current to an active layer by effectively arranging the electrodes in order to uniformly emit, thereby maximizing the emitting efficiency. CONSTITUTION: An n-type semiconductor layer(120), an active layer(130), and a p-type semiconductor layer(140) are successively formed on a substrate(110). An n electrode(150) is formed in the area in which the n-type semiconductor layer is exposed after being removed a part of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer. A p electrode(160) is formed on the p-type semiconductor layer. The p electrode comprises a p electrode pad and a p electrode arm forming a looped curve. The n electrode comprises an n electrode pad formed within the p electrode and an n electrode arm expended from the n electrode pad to each side of the upper side of the semiconductor light emitting device.
摘要翻译：目的：提供一种半导体发光器件，用于使电极的面积最小化，并通过有效地布置电极以均匀发射来提供电流至有源层，从而使发射效率最大化。构成：在衬底（110）上依次形成n型半导体层（120），有源层（130）和p型半导体层（140）。在除去一部分p型半导体层，有源层和n型半导体层之后，在n型半导体层暴露的区域中形成n电极（150）。 p电极（160）形成在p型半导体层上。 p电极包括p电极焊盘和形成环状曲线的p电极臂。 n电极包括形成在p电极内的n电极焊盘和从n电极焊盘延伸到半导体发光器件的上侧的每一侧的n电极臂。

7. 发明授权

KR101035143B1 질화갈륨계 반도체 발광소자의 ｐ-ＧａＮ층 상에 사용되는 반사전극 및 이를 포함하는 질화갈륨계 반도체 발광소자 失效
标题翻译：反射电极和基于氮化镓的化合物半导体发光器件
公开(公告)号：KR101035143B1
公开(公告)日：2011-05-17
申请号：KR1020100108743
申请日：2010-11-03
申请人： (주)더리즈
发明人： 배덕규
IPC分类号： H01L33/40
CPC分类号： H01L33/405 , H01L2924/12041 , H01L2933/0016
摘要： PURPOSE: A reflection electrode used on a p-gan layer of a gallium nitride based semiconductor light emitting device and the gallium nitride based semiconductor light emitting device are provided to improve an ohmic contact at an interface between the reflection electrode and a p-GaN layer by forming the reflection electrode including Ga, In, or Mg. CONSTITUTION: A light emitting unit includes a p-GaN layer(120), an active layer(130), and an n-GaN layer(140). An n electrode(150) is formed on the n-GaN layer. The n electrode is connected to an external power source and applies currents to a gallium nitride based semiconductor light emitting device. A p electrode(110) is formed on the p-GaN layer. The p electrode includes a first metal including Ag and a second metal including Ga, In, or Mg.
摘要翻译：目的：提供一种用于氮化镓基半导体发光器件的对流层和氮化镓基半导体发光器件的反射电极，以改善反射电极和p-GaN层之间的界面处的欧姆接触通过形成包括Ga，In或Mg的反射电极。构成：发光单元包括p-GaN层（120），有源层（130）和n-GaN层（140）。在n-GaN层上形成n电极（150）。 n电极连接到外部电源并且向氮化镓基半导体发光器件施加电流。 p电极（110）形成在p-GaN层上。 p电极包括包含Ag的第一金属和包括Ga，In或Mg的第二金属。

8. 发明授权

KR101025565B1 발광 소자 失效
标题翻译：发光装置
公开(公告)号：KR101025565B1
公开(公告)日：2011-03-28
申请号：KR1020100077782
申请日：2010-08-12
申请人： (주)더리즈
发明人： 여환국 , 배덕규
IPC分类号： H01L33/36 , H01L33/42
CPC分类号： H01L33/42 , H01L33/382
摘要： PURPOSE: A light emitting device is provided to prevent the increase of a contact resistance due to the thickness decrease of an ITO(Indium-Tin Oxide) transparent electrode by introducing a metal layer for improving a contact resistance on the surface to form the ITO transparent electrode. CONSTITUTION: A first conductive semiconductor layer(120), an active layer(130), and a second conductive semiconductor layer(140) are formed on a substrate(100). A first conductive electrode pad(170) is formed on the first conductive type semiconductor layer. A transparent electrode(150) is formed on the second conductive semiconductor layer. A second conductive type electrode pad(160) is formed on the transparent electrode. A first auxiliary electrode is extendedly formed on the second conductive type semiconductor layer in one direction.
摘要翻译：目的：提供一种发光器件，以通过引入用于提高表面上的接触电阻的金属层来防止由于ITO（氧化铟锡）透明电极的厚度减小而引起的接触电阻的增加，以形成ITO透明电极。构成：在衬底（100）上形成第一导电半导体层（120），有源层（130）和第二导电半导体层（140）。第一导电电极焊盘（170）形成在第一导电类型半导体层上。在第二导电半导体层上形成透明电极（150）。在透明电极上形成第二导电型电极焊盘（160）。第一辅助电极在一个方向上延伸地形成在第二导电类型半导体层上。

9. 发明公开

KR1020110083842A 반도체 발광 소자 失效
标题翻译：半导体发光器件
公开(公告)号：KR1020110083842A
公开(公告)日：2011-07-21
申请号：KR1020100003787
申请日：2010-01-15
申请人： (주)더리즈
发明人： 진용성 , 배덕규
IPC分类号： H01L33/36 , H01L33/38
CPC分类号： H01L33/382 , H01L33/145 , H01L2924/12041
摘要： PURPOSE: A semiconductor light emitting device is provided to uniformly maintain a current flowing around an n type electrode by positioning an n type electrode in a light emitting device and surrounding the n electrode with a p type electrode. CONSTITUTION: An n type electrode(170) includes an n type electrode pad(162) formed on an n type semiconductor layer(120). A p type electrode(160) is extended from a p type electrode pad(152) and surrounds the n type electrode pad and includes a p type finger unit(154) formed in the p type electrode pad side. The n type electrode is extended from the n type electrode pad, surrounds the end(156) of the p type finger unit, and includes an n type finger unit(164). The n type finger unit is formed in the n type electrode pad.
摘要翻译：目的：提供半导体发光器件以通过将n型电极定位在发光器件中并且用p型电极围绕n电极来均匀地保持流过n型电极的电流。构成：n型电极（170）包括形成在n型半导体层（120）上的n型电极焊盘（162）。 p型电极（160）从p型电极焊盘（152）延伸并且包围n型电极焊盘，并且包括形成在p型电极焊盘侧的p型指状单元（154）。 n型电极从n型电极焊盘延伸，包围p型手指单元的端部（156），并且包括n型手指单元（164）。 n型手指单元形成在n型电极垫中。

10. 发明授权

KR101048912B1 발광소자 失效
标题翻译：发光装置
公开(公告)号：KR101048912B1
公开(公告)日：2011-07-12
申请号：KR1020100129934
申请日：2010-12-17
申请人： (주)더리즈
发明人： 배덕규
IPC分类号： H01L33/38
CPC分类号： H01L33/382 , H01L33/42
摘要： PURPOSE: A light emitting device is provided to enhance optical extraction efficiency and usage rate of a fluorescent material layer. CONSTITUTION: An electrode pad(141) connects the first electrode part or the second electrode part to an external power supply. An electrode arm(142) includes an optical extraction part where the first semiconductor layer or the second semiconductor layer is exposed. An inner light extracting unit forms an optical extraction unit within the electrode arm. A side light extracting part is embedded from a side to an inner part of the electrode arm.
摘要翻译：目的：提供一种发光装置，以提高荧光材料层的光学提取效率和使用率。构成：电极焊盘（141）将第一电极部分或第二电极部分连接到外部电源。电极臂（142）包括露出第一半导体层或第二半导体层的光学提取部分。内部光提取单元在电极臂内形成光提取单元。侧光提取部分从电极臂的一侧嵌入到内部。

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