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1. 发明公开

EP1520303A1 HALBLEITERBAUELEMENT MIT INTEGRIERTEM RADIALSYMMETRISCHEM WIDERSTAND 审中-公开
标题翻译：具有集成径向对称的电阻半导体COMPONENT
公开(公告)号：EP1520303A1
公开(公告)日：2005-04-06
申请号：EP03763689.1
申请日：2003-07-02
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH
发明人： SCHULZE, Hans-Joachim , NIEDERNOSTHEIDE, Franz-Josef , KELLNER-WERDEHAUSEN , PFIRSCH, Frank
IPC分类号： H01L29/8605 , H01L29/74
CPC分类号： H01L29/7408 , H01L29/8605
摘要： The invention relates to a semiconductor component which is arranged within a semiconductor body (1) and comprises at least one integrated radially symmetrical lateral resistor (9) that is provided with location-dependent sheet resistance. Preferably, the radial dependence thereof is configured such that the differential resistance (dR) is radially constant or the power dissipated in the resistor is radially constant.

2. 发明公开

EP1500196A1 HALBBRÜCKENSCHALTUNG 有权
标题翻译：半桥电路
公开(公告)号：EP1500196A1
公开(公告)日：2005-01-26
申请号：EP03727329.9
申请日：2003-04-17
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH
发明人： MUENZER, Mark, Nils , TSCHIRBS, Roman
IPC分类号： H03K17/16
CPC分类号： H03K17/168 , H02M7/538 , H03K17/0828
摘要： The invention relates to a half-bridge circuit, in which an input signal (VE) that is applied between two input terminals (15, 16) can be picked up at a phase output (P). The inventive half-bridge circuit comprises two switching transistors (1, 2), which can be controlled by a respective control signal that is applied between a control electrode (G1; G2) and an auxiliary electrode (HE1; HE2) and two diodes (D1, D2). The first input terminal (15) is connected to the first electrode (C1) of the first switching transistor (1) and to a cathode (K1) of the first diode (D1). In addition, a second electrode (E1) of the first switching transistor (1) is connected to an anode (A1) of the first diode (D1) by means of the phase output (P), via a line (L11, L15, L16), to a first electrode (C2) of the second switching transistor (2) and to a cathode (K2) of the second diode (D2). Finally, a second electrode (E2) of the second switching transistor (2) is connected to an anode (A2) of the second diode (D2) and to the second input terminal (16). According to the invention, the aforementioned auxiliary electrode (HE1) of the first switching transistor (1) is not connected to the interconnecting line between the second electrode (E1) of the first switching transistor (1) and the first electrode (C2) of the second switching transistor (2), as per prior art, but to the line (L11, L15, L16) to the phase output (P).

3. 发明公开

EP1131848A1 VERFAHREN ZUR HERSTELLUNG EINES LEISTUNGSHALBLEITERS MIT EINER STOPPZONE 有权
标题翻译：一种用于生产功率半目止损ZONE
公开(公告)号：EP1131848A1
公开(公告)日：2001-09-12
申请号：EP99968325.3
申请日：1999-10-15
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： SCHULZE, Hans-Joachim , BARTHELMESS, Reiner
IPC分类号： H01L21/322 , H01L21/324 , H01L29/10
CPC分类号： H01L29/7395 , H01L29/1016 , H01L29/7455 , H01L29/749 , Y10S438/92
摘要： The invention relates to a method for producing a silicon power semiconductor device with a stop zone. According to the invention, this stop zone is produced by introducing oxygen and subsequently heating in order to form thermal donors with the oxygen.

4. 发明公开

EP1018158A1 FEUCHTIGKEITSSCHUTZ FÜR BORATGLASHALBLEITERPASSIVIERUNGSSCHICHTEN 审中-公开
标题翻译： FEUCHTIGKEITSSCHUTZFÜRBORATGLASHALBLEITERPASSIVIERUNGSSCHICHTEN
公开(公告)号：EP1018158A1
公开(公告)日：2000-07-12
申请号：EP98952548.0
申请日：1998-09-03
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： SCHILLING, Oliver , WEIDNER, Peter
IPC分类号： H01L23/31 , H01L23/29
CPC分类号： H01L23/3171 , H01L23/293 , H01L2924/0002 , H01L2924/00
摘要： According to the invention, a hydrophobic polymeric coating is used in the production of moisture proofing for zinc borate glass layers. The hydrophobic polymeric coating can consist of either benzocyclobutene or polyparylene.
摘要翻译：根据本发明，在硼酸锌玻璃层的防潮生产中使用疏水性聚合物涂层。疏水聚合物涂层可以由苯并环丁烯或聚对二甲苯构成。

5. 发明公开

EP1320897A1 VERFAHREN ZUM HERSTELLEN EINES KÖRPERS AUS HALBLEITERMATERIAL MIT REDUZIERTER MITTLERER FREIER WEGLÄNGE 有权
标题翻译：方法用于生产半导体材料的半导体元件具有降低平均自由程，并与程序作出半导体部件
公开(公告)号：EP1320897A1
公开(公告)日：2003-06-25
申请号：EP01985777.0
申请日：2001-08-27
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： KARTAL, Veli , SCHULZE, Hans-Joachim
IPC分类号： H01L29/32 , H01L29/861
CPC分类号： H01L29/861 , H01L29/32 , H01L29/36
摘要： The invention relates to a method for producing a body (1) consisting of doped semiconductor material having a defined mean free path length (μn) for free charge carriers (CP), and a mean free path length (μr) for the free charge carriers (CP) which is smaller than the defined mean free path length (μn). An epitactic crystal layer (20) consisting of doped semiconductor material is produced on a substrate crystal (10) consisting of semiconductor material having the defined mean free path length (μn), said crystal layer having, at least locally, a mean free path length (μr) for the free charge carriers (CP) which is smaller than the defined mean free path length (μn). The inventive body (1) can also be produced by joining two crystal bodies (10', 10'') consisting of doped semiconductor material.

6. 发明公开

EP1319253A1 STEUERBARES HALBLEITERBAUELEMENT 有权
标题翻译：可控半导体元件
公开(公告)号：EP1319253A1
公开(公告)日：2003-06-18
申请号：EP01976231.9
申请日：2001-09-17
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： KARTAL, Veli , SCHULZE, Hans-Joachim
IPC分类号： H01L29/78
CPC分类号： H01L29/7831
摘要： The controllable semiconductor component (1) has a body (10) consisting of doped silicon. Two separate electrodes (3, 4) are connected to the silicon, between which an electric operating voltage (U) of the component (1) is applied. A control electrode (2), to which an electric control voltage (Us) for controlling the component (1) is applied, is insulated from the silicon of the body (10) by electric insulation material (100). According to the invention, the control electrode (2) has two control electrode sections (21, 22), separated from one another by a gap (23). Said semiconductor component can be used for IGBTs and MOS transistors.

7. 发明公开

EP1319174A1 ANORDNUNG AUS ELEKTRONISCHEN BAUELEMENTEN MIT TEMPERATURSENSOR 有权
标题翻译：安排带温度传感器的电子元件。
公开(公告)号：EP1319174A1
公开(公告)日：2003-06-18
申请号：EP01931369.1
申请日：2001-03-15
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH
发明人： SÖLKNER, Gerald
IPC分类号： G01K11/32 , G01D5/353
CPC分类号： G01K11/3206 , G01D5/35383
摘要： The invention relates to an assembly (1) consisting of semiconductor chips (10) disposed on a common support (11) and comprising an optical fiber (13) with a plurality of optical Bragg gratings (130) with different grating-specific Bragg wavelengths (μi, i = 1, 2, ... n) which have the same temperature (T1, T2, ..., Tn) as a respective associated chip. The gratings are supplied with an optical radiation (14) via the fiber, said radiation comprising all Bragg wavelengths. The wavelengths of the optical radiation (15) in the fiber reflected by every grating are measured as a measure of the temperature of the chips.

8. 发明公开

EP1520331A1 VERFAHREN UND SCHALTUNGSANORDNUNG ZUM BERGRENZEN EINER BERS PANNUNG 有权
标题翻译：方法与电路限制浪涌
公开(公告)号：EP1520331A1
公开(公告)日：2005-04-06
申请号：EP03763653.7
申请日：2003-06-25
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH
发明人： MÜNZER, Mark , BAYERER, Reinhold , KANSCHAT, Peter
IPC分类号： H02H9/04 , H02M1/00
CPC分类号： H02M1/32 , H02H7/0838 , H02H9/047 , H02M1/088 , H03K17/0828
摘要： The aim of the invention is to limit an overvoltage on a parallel circuit of an IGBT (3) and a freewheeling diode(7). To this end, an undesired current spike is used to switch on the IGBT (3') blocked per se, during the presence of the current spike, such that a current acting against the overvoltage is produced in the IGBT-freewheeling diode pair. The current acting in an opposing manner reduces the current rate of rise in leakage inductances (LS), and reduces the undesired induced overvoltages.

9. 发明公开

EP1493229A1 SCHALTUNGSANORDNUNG ZUM ANSTEUERN EINES HALBLEITERSCHALTERS 有权
标题翻译：电路，用于控制半导体开关
公开(公告)号：EP1493229A1
公开(公告)日：2005-01-05
申请号：EP03720341.1
申请日：2003-03-20
申请人： eupecEuropäische Gesellschaft fürLeistungshalbleiter mbH
发明人： HORNKAMP, Michael
IPC分类号： H03K17/082
CPC分类号： H03K17/0828 , H03K17/166
摘要： The invention relates to a circuit arrangement for control of a regulated path and a semiconductor circuit (1), comprising a control connection, with an input, to which a switching signal (3) for control of the semiconductor circuit (1) is applied, an output, to which the control connector of the semiconductor circuit (1) is coupled, a control circuit (2) arranged between input and output, where the switching signal (3) may be retained at the current value by means of a hold signal and an analytical circuit (2), which measures a voltage corresponding to the voltage across the controlled path and generates the holding signal for the control circuit (2) for a given duration when the voltage across the controlled path of the semiconductor circuit (1) has a rise which indicates a switching off of the semiconductor circuit (1).

10. 发明公开

EP1186041A2 NIEDERINDUKTIVES HALBLEITERBAUELEMENT 无效转让
公开(公告)号：EP1186041A2
公开(公告)日：2002-03-13
申请号：EP00934918.4
申请日：2000-04-20
申请人： EUPECEuropäische Gesellschaft fürLeistungshalbleiter mbH & Co. KG
发明人： HIERHOLZER, Martin
IPC分类号： H01L23/64 , H01L23/50 , H01L25/07
CPC分类号： H01L24/49 , H01L23/5386 , H01L24/48 , H01L25/072 , H01L2224/48091 , H01L2224/48227 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/13055 , H01L2924/13091 , H01L2924/15787 , H01L2924/19041 , H01L2924/30107 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： The invention relates to a semiconductor component comprising a housing, a substrate board, at least one ceramic substrate which at least on its upper surface is provided with a metallization (10), and at least two switching elements. The switching elements are mounted on the upper surface of the ceramic substrate in an electrically conductive manner and each have load-current connections and a control connection. According to the invention the semiconductor component comprises several external load-current connecting elements which are positioned on one side of said component as well as on a second side which is opposite the first. The load-current connections of the switching elements are electrically connected via supply wires to the external load-current connecting elements which can present a first and a second supply potential. Two switching elements each are arranged next to each other in such a way that the corresponding supply wires extend substantially parallel to two load-current connecting elements which are assigned to same and present different polarities. This results in compensation of the magnetic fields.
摘要翻译：为了在半导体部件中获得最小的漏电感，需要提供至少两个相邻的开关元件，其负载电流连接元件在一个外壳侧相邻以具有不同的极性。多个偶数开关元件有利地在对准线上彼此相邻布置。彼此相邻设置的负载电流连接元件和开关元件的负载电流连接之间的引线有利地相对于对准线大致正交地运行。所分配的负载电流连接元件然后交替地具有第一和第二电源电位，并且使漏电感最小化。

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