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1. 发明申请

WO2008156892A2 METALLIC NANOSPHERES EMBEDDED IN NANOWIRES INITIATED ON NANOSTRUCTURES AND METHODS FOR SYNTHESIS THEREOF 审中-公开
标题翻译：嵌入在纳米结构中的纳米金属纳米结构的金属纳米微粒及其合成方法
公开(公告)号：WO2008156892A2
公开(公告)日：2008-12-24
申请号：PCT/US2008059211
申请日：2008-04-03
申请人： L LIVERMORE NAT SECURITY LLC , ZAIDI SALEEM , TRINGE JOSEPH W , VANAMU GANESH , PRINJA RAJIV
发明人： ZAIDI SALEEM , TRINGE JOSEPH W , VANAMU GANESH , PRINJA RAJIV
CPC分类号： G11B9/062 , B22F1/0018 , B22F1/0048 , B22F2998/00 , B82Y10/00 , B82Y30/00 , C04B35/6224 , C04B2235/408 , C04B2235/5454 , G11B9/063 , G11B9/08 , G11C2213/16 , Y10S977/762 , Y10S977/856 , Y10S977/938 , Y10S977/943 , C22C29/12 , B22F1/0025
摘要： A nanostruclure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A nanostructure in another embodiment includes a substrate having an area with a nanofeature; and a nanowire extending from the nanofeature, the nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A method for forming a nanostructure is also presented. A method for reading and writing data is also presented. A method for preparing nanoparticles is also presented.
摘要翻译：纳米结构包括其中形成有金属球的纳米线，所述球的特征在于具有大致均匀的直径和在其间大致均匀间隔中的至少一个。另一个实施方案中的纳米结构包括具有纳米尺度区域的基底; 和纳米线，其纳米线由纳米线延伸，所述纳米线在其中形成有金属球，所述球体的特征在于具有大致均匀直径和大致均匀间隔的至少一个。还提出了形成纳米结构的方法。还提供了一种读取和写入数据的方法。还提出了制备纳米颗粒的方法。

2. 发明申请

WO2008156892A3 METALLIC NANOSPHERES EMBEDDED IN NANOWIRES INITIATED ON NANOSTRUCTURES AND METHODS FOR SYNTHESIS THEREOF 审中-公开
公开(公告)号：WO2008156892A3
公开(公告)日：2008-12-24
申请号：PCT/US2008/059211
申请日：2008-04-03
申请人： LAWRENCE LIVERMORE NATIONAL SECURITY, LLC. , ZAIDI, Saleem , TRINGE, Joseph, W. , VANAMU, Ganesh , PRINJA, Rajiv
发明人： ZAIDI, Saleem , TRINGE, Joseph, W. , VANAMU, Ganesh , PRINJA, Rajiv
IPC分类号： B82B1/00
摘要： A nanostruclure includes a nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A nanostructure in another embodiment includes a substrate having an area with a nanofeature; and a nanowire extending from the nanofeature, the nanowire having metallic spheres formed therein, the spheres being characterized as having at least one of about a uniform diameter and about a uniform spacing there between. A method for forming a nanostructure is also presented. A method for reading and writing data is also presented. A method for preparing nanoparticles is also presented.

3. 发明申请

WO1996026468A1 METHODS AND APPARATUSES FOR LITHOGRAPHY OF SPARSE ARRAYS OF SUB-MICROMETER FEATURES 审中-公开
标题翻译：亚微米特征稀疏阵列算法的方法和装置
公开(公告)号：WO1996026468A1
公开(公告)日：1996-08-29
申请号：PCT/US1996002526
申请日：1996-02-23
申请人： UNIVERSITY OF NEW MEXICO , BRUECK, Steven, R., J. , CHEN, Xiaolan , ZAIDI, Saleem , DEVINE, Daniel, J.
发明人： UNIVERSITY OF NEW MEXICO
IPC分类号： G03F07/20
CPC分类号： G03F7/70408 , G03F7/70466
摘要： Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed inlude: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose, combination of a singgle-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.
摘要翻译：公开了用于暴露具有1:3或更大的线：空间比的稀疏孔和/或台面阵列的方法和装置，并且在分层材料的顶层中的感光材料层中的亚微米孔和/或台面直径。包括的方法：双曝光干涉光刻对，其中仅每个单周期曝光对的重叠最大值附近的那些区域接收清除曝光剂量; 双重干涉光刻曝光对，其具有附加处理步骤，以将阵列从第一单周期干涉光刻曝光对转移到中间掩模层和第二单周期干涉光刻曝光中，以进一步选择第一阵列孔的子集; 单周期干涉光刻曝光对的双重曝光以限定亚微米孔的密集阵列和光学曝光曝光，其中仅两个曝光的最大值附近的那些孔接收清除曝光剂量，单周期干涉测量曝光的组合对，将所产生的密集的亚微米孔阵列转移到中间蚀刻掩模中的处理，以及光学曝光以选择初始阵列的子集以形成稀疏阵列; 光学曝光的组合，曝光图案转印到中间掩模层中，以及单周期干涉光刻曝光对; 三光束干涉曝光对形成亚微米孔的稀疏阵列; 五光束和四光束干涉曝光以在单次曝光中形成稀疏阵列的亚微米孔。公开的装置包括用于三光束，五光束和四光束干涉曝光的布置。

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