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1. 发明申请

WO2012068323A3 METHOD FOR MATCHING OF PATTERNS 审中-公开
标题翻译：用于匹配图案的方法
公开(公告)号：WO2012068323A3
公开(公告)日：2012-07-12
申请号：PCT/US2011061108
申请日：2011-11-17
申请人： D2S INC , FUJIMURA AKIRA , KRONMILLER THOMAS , JACQUES ETIENNE , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , KRONMILLER THOMAS , JACQUES ETIENNE , ZABLE HAROLD ROBERT
IPC分类号： H01L21/66 , H01L21/00 , H01L21/027
CPC分类号： G06K9/6857
摘要： A method for matching of two detailed patterns is disclosed in which abstracts of each of the detailed patterns are created, where the abstracts are less complex than the detailed patterns. The abstracts are then compared to determine if the detailed patterns may possibly match, where comparison of the abstracts is faster than comparison of the detailed patterns. If comparison of the abstracts indicates a possible match, then the detailed patterns are compared, otherwise no detailed pattern comparison is needed.
摘要翻译：公开了一种用于匹配两个详细模式的方法，其中创建每个详细模式的摘要，其中摘要比详细模式更复杂。然后比较抽象以确定详细模式是否可能匹配，其中抽象的比较比详细模式的比较更快。如果抽象的比较表示可能的匹配，则比较详细的模式，否则不需要详细的模式比较。

2. 发明申请

WO2011078968A2 METHOD AND SYSTEM FOR FRACTURING A PATTERN USING CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES 审中-公开
标题翻译：使用多次曝光通道的带电粒子束光刻法分割图案的方法和系统
公开(公告)号：WO2011078968A2
公开(公告)日：2011-06-30
申请号：PCT/US2010/059345
申请日：2010-12-07
申请人： D2S, INC. , ZABLE, Harold Robert , FUJIMURA, Akira
发明人： ZABLE, Harold Robert , FUJIMURA, Akira
IPC分类号： G03F7/20 , G06F17/50 , G06F19/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed.
摘要翻译：在使用带电粒子束光刻的半导体生产领域中，公开了一种使用多个曝光通道进行压裂或掩模数据准备或邻近效应校正的方法和系统。在一个实施方案中，用于多个曝光通道的基础剂量彼此不同。在另一个实施例中，来自曝光通道之一的镜头的联合不同于来自不同曝光次数的镜头的联合。在另一个实施方案中，多次暴露通过的基础剂量水平的总和不等于正常剂量。还公开了用于制造掩模版和制造集成电路的类似方法。

3. 发明申请

WO2010025061A3 METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING A TWO-DIMENSIONAL DOSAGE MAP AND CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用二维剂量图和带电粒子束光刻的设计和制造方法
公开(公告)号：WO2010025061A3
公开(公告)日：2010-05-14
申请号：PCT/US2009054239
申请日：2009-08-19
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , Y10S430/143
摘要： In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. A method for creating glyphs is also disclosed, in which a two-dimensional dosage map of one or more shots is calculated, and the list of shots and the calculated dosage map are stored for later reference.
摘要翻译：在半导体器件制造领域中，公开了使用二维剂量图来制造表面的方法。通过将用于多个照射的剂量图合并到表面的剂量图中来确定用于在表面上产生图像的一组带电粒子束照射。公开了一种用于压印或掩模掩模图像的数据准备的类似方法。还公开了一种用于创建字形的方法，其中计算一个或多个照片的二维剂量图，并且存储照片列表和计算的剂量图以供以后参考。

4. 发明申请

WO2012118616A2 METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用带电粒子束光刻技术形成图案的方法和系统
公开(公告)号：WO2012118616A2
公开(公告)日：2012-09-07
申请号：PCT/US2012/025149
申请日：2012-02-15
申请人： D2S, INC. , FUJIMURA, Akira , ZABLE, Harold Robert
发明人： FUJIMURA, Akira , ZABLE, Harold Robert
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
摘要翻译：公开了一种用于分裂或掩模数据准备或光学邻近校正或邻近效应校正或掩模处理校正的方法和系统，其中确定了能够形成图案的一组成形射束照射一个表面，其中在同一曝光过程中的多个镜头重叠，并且计算来自该组镜头的剂量余量。公开了一种用于破裂或掩模数据准备或光学邻近校正或邻近效应校正或掩模处理校正的方法和系统，其中确定了能够在表面上形成图案的一组成形束射击，其中射击组为图案的不同部分提供不同的剂量，并且计算来自一组照射的剂量边界。还公开了一种在表面上形成图案的方法。

5. 发明申请

WO2012068323A2 METHOD FOR MATCHING OF PATTERNS 审中-公开
标题翻译：模式匹配的方法
公开(公告)号：WO2012068323A2
公开(公告)日：2012-05-24
申请号：PCT/US2011/061108
申请日：2011-11-17
申请人： D2S, INC. , FUJIMURA, Akira , KRONMILLER, Thomas , JACQUES, Etienne , ZABLE, Harold Robert
发明人： FUJIMURA, Akira , KRONMILLER, Thomas , JACQUES, Etienne , ZABLE, Harold Robert
IPC分类号： H01L21/66 , H01L21/027 , H01L21/00
CPC分类号： G06K9/6857
摘要： A method for matching of two detailed patterns is disclosed in which abstracts of each of the detailed patterns are created, where the abstracts are less complex than the detailed patterns. The abstracts are then compared to determine if the detailed patterns may possibly match, where comparison of the abstracts is faster than comparison of the detailed patterns. If comparison of the abstracts indicates a possible match, then the detailed patterns are compared, otherwise no detailed pattern comparison is needed.
摘要翻译：公开了一种用于匹配两个详细模式的方法，其中创建每个详细模式的摘要，其中摘要比详细模式复杂。然后比较摘要，以确定详细模式是否可能匹配，其中摘要的比较比详细模式的比较快。如果比较摘要表明可能的匹配，则详细模式进行比较，否则不需要详细模式比较。

6. 发明申请

WO2010025061A2 METHOD FOR DESIGN AND MANUFACTURE OF A RETICLE USING A TWO-DIMENSIONAL DOSAGE MAP AND CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用二维剂量图和带电粒子束光刻技术设计和制造制品的方法
公开(公告)号：WO2010025061A2
公开(公告)日：2010-03-04
申请号：PCT/US2009/054239
申请日：2009-08-19
申请人： D2S, INC. , FUJIMURA, Akira , ZABLE, Harold, Robert
发明人： FUJIMURA, Akira , ZABLE, Harold, Robert
IPC分类号： H01L21/027 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/68 , G03F1/78 , Y10S430/143
摘要： In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. A method for creating glyphs is also disclosed, in which a two-dimensional dosage map of one or more shots is calculated, and the list of shots and the calculated dosage map are stored for later reference.
摘要翻译：在半导体器件生产领域中，公开了一种使用二维剂量图制造表面的方法。用于在表面上产生图像的一组带电粒子束照射通过将用于多个照射的剂量图组合到表面的剂量图中来确定。公开了一种类似的方法来对分划板图像进行压裂或掩模数据准备。还公开了一种用于创建字形的方法，其中计算一个或多个镜头的二维剂量图，并且存储镜头列表和计算出的剂量图以供以后参考。

7. 发明申请

WO2012118616A3 METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电颗粒光栅成像形成图案的方法和系统
公开(公告)号：WO2012118616A3
公开(公告)日：2012-12-06
申请号：PCT/US2012025149
申请日：2012-02-15
申请人： D2S INC , FUJIMURA AKIRA , ZABLE HAROLD ROBERT
发明人： FUJIMURA AKIRA , ZABLE HAROLD ROBERT
IPC分类号： H01L21/027 , G03F1/36
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31764 , H01J2237/31776
摘要： A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.
摘要翻译：公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中多个镜头在相同的曝光通过重叠中，并且计算来自该组拍摄的剂量余量。公开了一种用于压裂或掩模数据准备或光学邻近校正或接近效应校正或掩模处理校正的方法和系统，其中确定一组成形的射束，其能够在表面上形成图案，其中所述一组镜头对图案的不同部分提供不同的剂量，并且计算来自该组照射的剂量余量。还公开了在表面上形成图案的方法。

8. 发明申请

WO2011078968A3 METHOD AND SYSTEM FOR FRACTURING A PATTERN, AND FOR CHARGED PARTICLE BEAM LITHOGRAPHY WITH MULTIPLE EXPOSURE PASSES 审中-公开
标题翻译：用于破碎图案的方法和系统，以及用于多次曝光通过的带电粒子束光刻
公开(公告)号：WO2011078968A3
公开(公告)日：2011-11-03
申请号：PCT/US2010059345
申请日：2010-12-07
申请人： D2S INC , ZABLE HAROLD ROBERT , FUJIMURA AKIRA
发明人： ZABLE HAROLD ROBERT , FUJIMURA AKIRA
IPC分类号： H01J37/317 , G03F1/14 , G03F7/20
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction using a plurality of exposure passes is disclosed. In one embodiment, base dosages for the plurality of exposure passes are different from each other. In another embodiment, the union of shots from one of the exposure passes is different than the union of shots from a different exposure pass. In a further embodiment, the sum of the base dosage levels for the plurality of exposure passes does not equal a normal dosage. Similar methods for manufacturing a reticle and manufacturing an integrated circuit are also disclosed.
摘要翻译：在使用带电粒子束光刻的半导体生产领域中，公开了一种使用多个曝光通道进行压裂或掩模数据准备或邻近效应校正的方法和系统。在一个实施方案中，用于多个曝光通道的基础剂量彼此不同。在另一个实施例中，来自曝光通道之一的镜头的联合不同于来自不同曝光次数的镜头的联合。在另一个实施方案中，多次暴露通过的基础剂量水平的总和不等于正常剂量。还公开了用于制造掩模版和制造集成电路的类似方法。

9. 发明申请

WO2011049740A1 METHOD AND SYSTEM FOR FORMING A PATTERN ON A SURFACE USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
标题翻译：使用充电粒子束光刻法在表面形成图案的方法和系统
公开(公告)号：WO2011049740A1
公开(公告)日：2011-04-28
申请号：PCT/US2010/051534
申请日：2010-10-05
申请人： D2S, INC. , KOMAGATA, Takashi , FUJIMURA, Akira , ZABLE, Harold Robert , TUCKER, Michael
发明人： KOMAGATA, Takashi , FUJIMURA, Akira , ZABLE, Harold Robert
IPC分类号： G03F7/20 , G03F1/14 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , G03F1/36 , G03F1/78
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a pattern is formed on a surface (130) by dragging a charged particle beam (140) across the surface in a single extended shot to form a track. In some embodiments, the track may form a straight path, a curved path, or a perimeter of a curvilinear shape (850,852,854,856,858,860,862). In other embodiments, the width of the track may be altered by varying the velocity of the dragged beam (140). The techniques may be used for manufacturing an integrated circuit by dragging a charged particle beam across a resist-coated wafer to transfer a pattern to the wafer, or by dragging a charged particle beam across a reticle, where the reticle is used to manufacture a photomask which is then used to transfer a pattern to a wafer using an optical lithographic process.
摘要翻译：在使用成形带电粒子束光刻的半导体生产领域中，通过在单个延伸镜头中将带电粒子束（140）拖过表面而形成在表面（130）上的图案以形成轨道。在一些实施例中，轨迹可以形成曲线形状的直线路径，曲线路径或周边（850,852,854,856,858,860,862）。在其他实施例中，可以通过改变拖曳梁（140）的速度来改变轨道的宽度。这些技术可以用于通过将带电粒子束拖过抗蚀剂涂覆的晶片以将图案转移到晶片，或者通过将带电粒子束拖动通过掩模版来制造集成电路，其中掩模版用于制造光掩模然后将其用于使用光学光刻工艺将图案转印到晶片。

10. 发明申请

WO2011049735A3 METHOD FOR FRACTURING A PATTERN FOR WRITING WITH A SHAPED CHARGED PARTICLE BEAM WRITING SYSTEM USING DRAGGED SHOTS 审中-公开
公开(公告)号：WO2011049735A3
公开(公告)日：2011-04-28
申请号：PCT/US2010/051393
申请日：2010-10-05
申请人： D2S, INC. , FUJIMURA, Akira , ZABLE, Harold, Robert , TUCKER, Michael
发明人： FUJIMURA, Akira , ZABLE, Harold, Robert , TUCKER, Michael
IPC分类号： H01J37/317 , G03F7/20 , G03F1/14
摘要： In the field of semiconductor production using shaped charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, wherein a shot determined for a shaped charged particle beam writer system comprises dragging the charged particle beam across a surface during the shot, so as to form a complex pattern in a single, extended shot. The dragging may be done with either variable shaped beam (VSB) or character projection (CP) shots. Methods for specifying in the shot data the path for the dragged shot are also disclosed. Other embodiments include using dragged shots with partial projection, varying the dragging velocity during a shot, and combining dragged shots with conventional shots. A method and system for creating glyphs which contain dragged shots is also disclosed.

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