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1. 发明申请

US20110036984A1 TUNABLE BROADBAND ANTI-RELFECTION APPARATUS 有权
标题翻译： TUNABLE BROADBAND防抱死装置
公开(公告)号：US20110036984A1
公开(公告)日：2011-02-17
申请号：US12855332
申请日：2010-08-12
申请人： Xi-Cheng ZHANG , Pengyu HAN , Yuting W. CHEN
发明人： Xi-Cheng ZHANG , Pengyu HAN , Yuting W. CHEN
IPC分类号： H01L31/0232 , H01L31/09 , G02B1/11
CPC分类号： G02B1/118
摘要： A broadband anti-reflection apparatus for use with terahertz radiation includes a layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to about a 110 μm period, and wherein reflectance of the terahertz radiation is reduced compared to a layer comprising a planar outer surface. Also disclosed is a method for modifying terahertz radiation which includes receiving terahertz radiation on a device having an anti-reflection layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to a 110 μm period, and modifying the terahertz radiation passing through the device or processing the terahertz radiation in the device.
摘要翻译：一种与太赫兹辐射一起使用的宽带抗反射装置包括具有外表面的层，该层具有包括大约30μm至大约110μm周期的多个金字塔结构，并且与包括以下的层相比，太赫兹辐射的反射率降低：平面外表面。还公开了一种用于修改太赫兹辐射的方法，其包括在具有抗反射层的装置上接收太赫兹辐射，所述抗反射层具有外表面，该外表面包括具有约30μm至110μm周期的多个金字塔结构，并且修改太赫兹辐射通过通过设备或处理设备中的太赫兹辐射。

2. 发明授权

US08338802B2 Terahertz radiation anti-reflection devices and methods for handling terahertz radiation 有权
标题翻译：太赫兹辐射防反射装置和处理太赫兹辐射的方法
公开(公告)号：US08338802B2
公开(公告)日：2012-12-25
申请号：US13218993
申请日：2011-08-26
申请人： Xi-Cheng Zhang , Pengyu Han , Yuting W. Chen
发明人： Xi-Cheng Zhang , Pengyu Han , Yuting W. Chen
IPC分类号： H01J19/12 , G02B1/00 , B23P11/00 , G02B5/00 , G01J1/00
CPC分类号： G02B1/118 , Y10T29/49826
摘要： A terahertz (THz) anti-reflection device, for example, a broadband tunable THz anti-reflection device, includes a silicon substrate having a plurality of recesses, each of the plurality of recesses having a plurality of cavities of decreasing dimension. The cavities may be nested polygonal cavities, for example, having a square or rectangular cross section. The recesses having the cavities may be positioned at regular periods, for example, periods ranging from 10 μm to 20 μm. The devices may be fabricated by conventional lithographic methods. Also disclosed are methods for modifying terahertz radiation and methods for fabricating anti-reflection devices.
摘要翻译：太赫兹（THz）抗反射装置，例如宽带可调THz抗反射装置，包括具有多个凹槽的硅基板，多个凹槽中的每一个具有多个尺寸减小的空腔。空腔可以是嵌套的多边形空腔，例如具有正方形或矩形横截面。具有空腔的凹部可以以规定的周期定位，例如10μm至20μm的周期。这些器件可以通过常规的光刻方法制造。还公开了用于修改太赫兹辐射的方法和用于制造防反射装置的方法。

3. 发明申请

US20120049090A1 TERAHERTZ RADIATION ANTI-REFLECTION DEVICES AND METHODS FOR HANDLING TERAHERTZ RADIATION 有权
标题翻译： TERAHERTZ辐射防反射装置和处理TERAHERTZ辐射的方法
公开(公告)号：US20120049090A1
公开(公告)日：2012-03-01
申请号：US13218993
申请日：2011-08-26
申请人： Xi-Cheng ZHANG , Pengyu HAN , Yuting W. CHEN
发明人： Xi-Cheng ZHANG , Pengyu HAN , Yuting W. CHEN
IPC分类号： B01J19/12 , G02B1/00 , B23P11/00 , G02B5/00
CPC分类号： G02B1/118 , Y10T29/49826
摘要： A terahertz (THz) anti-reflection device, for example, a broadband tunable THz anti-reflection device, includes a silicon substrate having a plurality of recesses, each of the plurality of recesses having a plurality of cavities of decreasing dimension. The cavities may be nested polygonal cavities, for example, having a square or rectangular cross section. The recesses having the cavities may be positioned at regular periods, for example, periods ranging from 10 μm to 20 μm. The devices may be fabricated by conventional lithographic methods. Also disclosed are methods for modifying terahertz radiation and methods for fabricating anti-reflection devices.
摘要翻译：太赫兹（THz）抗反射装置，例如宽带可调THz抗反射装置，包括具有多个凹槽的硅基板，多个凹槽中的每一个具有多个尺寸减小的空腔。空腔可以是嵌套的多边形空腔，例如具有正方形或矩形横截面。具有空腔的凹部可以以规定的周期定位，例如10μm至20μm的周期。这些器件可以通过常规的光刻方法制造。还公开了用于修改太赫兹辐射的方法和用于制造防反射装置的方法。

4. 发明授权

US08299435B2 Tunable broadband anti-relfection apparatus 有权
标题翻译：可调式宽带抗再感器
公开(公告)号：US08299435B2
公开(公告)日：2012-10-30
申请号：US12855332
申请日：2010-08-12
申请人： Xi-Cheng Zhang , Pengyu Han , Yuting W. Chen
发明人： Xi-Cheng Zhang , Pengyu Han , Yuting W. Chen
IPC分类号： G01J5/08
CPC分类号： G02B1/118
摘要： A broadband anti-reflection apparatus for use with terahertz radiation includes a layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to about a 110 μm period, and wherein reflectance of the terahertz radiation is reduced compared to a layer comprising a planar outer surface. Also disclosed is a method for modifying terahertz radiation which includes receiving terahertz radiation on a device having an anti-reflection layer having an outer surface comprising a plurality of pyramid structures having about a 30 μm to a 110 μm period, and modifying the terahertz radiation passing through the device or processing the terahertz radiation in the device.
摘要翻译：一种与太赫兹辐射一起使用的宽带抗反射装置包括具有外表面的层，该层具有包括大约30μm至大约110μm周期的多个金字塔结构，并且与包括以下的层相比，太赫兹辐射的反射率降低：平面外表面。还公开了一种用于修改太赫兹辐射的方法，其包括在具有抗反射层的装置上接收太赫兹辐射，所述抗反射层具有外表面，该外表面包括具有约30μm至110μm周期的多个金字塔结构，并且修改太赫兹辐射通过通过设备或处理设备中的太赫兹辐射。

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