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1. 发明专利

JP2010261041A Prepolymer for biomedical material 有权
标题翻译：用于生物医学材料的预处理剂
公开(公告)号：JP2010261041A
公开(公告)日：2010-11-18
申请号：JP2010107183
申请日：2010-05-07
申请人： Chih Hung Chang , Yun Liang Ouyang , オウヤンユンリアンOuyang, Yun Liang , チャンチウフンChang, Chih Hung
发明人： OUYANG YUN LIANG , CHANG CHIH HUNG
IPC分类号： C08G18/61 , A61L15/00 , A61L27/00 , C08G77/388
CPC分类号： C08G18/5096 , A61K31/785 , C08G18/61 , C08G18/71 , C08G18/8108 , C08G18/8116 , C08G18/831 , C08G77/46
摘要： PROBLEM TO BE SOLVED: To provide a prepolymer for a biomedical material which can be changed in number of molecular groups to modulate the air-permeation, oxygen-permeation and humidification and improve the compatibility with the other hydrophilic molecule.
SOLUTION: The prepolymer is represented by chemical formula (1) [wherein X1 is an aliphatic compound or an aromatic compound; X3 is an olefin functional group-containing compound; and X2 is a siloxane compound having a chemical formula (2)].
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供可以改变分子数目的生物医学材料的预聚物，以调节空气渗透，氧渗透和加湿，并提高与另一亲水性分子的相容性。解决方案：预聚物由化学式（1）表示[其中X 1是脂族化合物或芳族化合物; X3是含烯烃官能团的化合物; X2为具有化学式（2）的硅氧烷化合物]。版权所有（C）2011，JPO＆INPIT

2. 发明申请

US20070093191A1 Polishing pad and method of fabrication 有权
标题翻译：抛光垫和制造方法
公开(公告)号：US20070093191A1
公开(公告)日：2007-04-26
申请号：US11542270
申请日：2006-10-04
申请人： Yu-Piao Wang , Yun-Liang Ouyang
发明人： Yu-Piao Wang , Yun-Liang Ouyang
IPC分类号： B24D11/00
CPC分类号： B24B37/22 , B24B37/26 , B24D18/00
摘要： A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.
摘要翻译：抛光垫，其包括安装表面和具有其上具有至少一个孔的抛光图案的相对的抛光表面，其上形成粘合剂层，粘附层具有均匀的粘合强度。实施例包括在形成研磨表面上的抛光图案之前，以均匀的压力将粘合剂层施加到安装表面。实施例还包括形成具有至少一个孔的抛光图案，形成具有与抛光图案相对的表面图案并具有突起的钳具，将钳工件定位在抛光图案上，使得突起填充抛光图案中的孔，形成复合材料具有基本上平行的相对表面，施加压力以将粘合剂层粘合到安装表面，其间具有基本上均匀的粘合强度，并且去除钳具。

3. 发明授权

US06336787B1 Method for transferring wafers in a semiconductor tape-peeling apparatus 有权
标题翻译：在半导体带剥离装置中转印晶片的方法
公开(公告)号：US06336787B1
公开(公告)日：2002-01-08
申请号：US09551194
申请日：2000-04-17
申请人： Chin-hsiang Chang , Yun-liang Ouyang , Chih-shen Yang , Kuei-chang Tsai
发明人： Chin-hsiang Chang , Yun-liang Ouyang , Chih-shen Yang , Kuei-chang Tsai
IPC分类号： A01L2168
CPC分类号： H01L21/6838 , Y10S156/941 , Y10T156/19
摘要： A wafer transfer method using a robot arm for sucking the front-side of the uppermost one of a plurality of wafers stored in a cassette, and for transferring the wafer having a tape adhered to the front-side thereof to a semiconductor tape-peeling device for tape-peeling. Although the wafer warps, the undesired effect that the robot arm crashes any of the wafers can be avoided by using this method.
摘要翻译：一种晶片转印方法，其使用机器人臂吸收存储在盒中的多个晶片中的最上面的一个的前侧，并且将具有附着到其前侧的带的晶片转印到半导体带剥离装置用于胶带剥离。虽然晶片翘曲，但是可以通过使用该方法来避免机器人手臂崩溃任何晶片的不期望的效果。

4. 发明申请

US20100286428A1 PREPOLYMER FOR BIOMEDICAL MATERIALS 有权
标题翻译：用于生物医学材料的预处理剂
公开(公告)号：US20100286428A1
公开(公告)日：2010-11-11
申请号：US12704731
申请日：2010-02-12
申请人： YUN LIANG OUYANG , CHIH HUNG CHANG
发明人： YUN LIANG OUYANG , CHIH HUNG CHANG
IPC分类号： C07F7/10
CPC分类号： C08G18/5096 , A61K31/785 , C08G18/61 , C08G18/71 , C08G18/8108 , C08G18/8116 , C08G18/831 , C08G77/46
摘要： A prepolymer for biomedical materials has the following formula: wherein X1 represents aliphatic compounds or aromatic compounds, X3 represents alkene-containing compounds, and X2 represents siloxane compounds having the following formula. In one embodiment of the present invention, n is between 1 and 20, m is between 10 and 20, and y is between 1 and 7.
摘要翻译：用于生物医学材料的预聚物具有下式：其中X1表示脂族化合物或芳族化合物，X3表示含烯烃的化合物，X2表示具有下式的硅氧烷化合物。在本发明的一个实施方案中，n为1至20，m为10至20，y为1至7。

5. 发明授权

US06979367B2 Method of improving surface planarity 有权
公开(公告)号：US06979367B2
公开(公告)日：2005-12-27
申请号：US10637598
申请日：2003-08-11
申请人： Chien-Ching Chan , Yun-Liang Ouyang , Yung-Wei Lu
发明人： Chien-Ching Chan , Yun-Liang Ouyang , Yung-Wei Lu
IPC分类号： C23C16/455 , H01L21/316 , C30B25/12 , C30B25/14
CPC分类号： H01L21/02271 , C23C16/455 , H01L21/022 , H01L21/31604
摘要： A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.

6. 发明申请

US20050037616A1 Method of improving surface planarity 有权
标题翻译：提高表面平面度的方法
公开(公告)号：US20050037616A1
公开(公告)日：2005-02-17
申请号：US10637598
申请日：2003-08-11
申请人： Chien-Ching Chan , Yun-Liang Ouyang , Yung-Wei Lu
发明人： Chien-Ching Chan , Yun-Liang Ouyang , Yung-Wei Lu
IPC分类号： C23C16/455 , H01L21/316 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02271 , C23C16/455 , H01L21/022 , H01L21/31604
摘要： A method of improving surface planarity of a wafer. The method includes forming a first thin-film layer on the wafer using CVD in a first thin film deposition apparatus having at least one gas injector, relative to which the wafer has a first orientation, and forming a second thin-film layer on the wafer using CVD. The second deposition takes place in a second thin film deposition apparatus having at least one second gas injector arranged the same as that in the first thin film deposition apparatus, the wafer having a second orientation relative to the gas injector in the second thin film deposition apparatus. A first angle between the two orientations results in the second apparatus' injector distributing material in a different area from that of the first gas injector.
摘要翻译：一种提高晶片表面平面度的方法。该方法包括在具有至少一个气体注入器的第一薄膜沉积设备中使用CVD形成第一薄膜层，第一薄膜沉积设备中晶片具有第一取向，并且在晶片上形成第二薄膜层使用CVD。第二沉积发生在第二薄膜沉积设备中，其具有布置成与第一薄膜沉积设备中相同的至少一个第二气体喷射器，晶片相对于第二薄膜沉积设备中的气体喷射器具有第二取向。两个取向之间的第一角度导致第二装置的喷射器分配材料在与第一气体喷射器不同的区域中。

7. 发明授权

US08304570B2 Prepolymer for biomedical materials 有权
标题翻译：生物医学材料预聚物
公开(公告)号：US08304570B2
公开(公告)日：2012-11-06
申请号：US12704731
申请日：2010-02-12
申请人： Yun Liang Ouyang , Chih Hung Chang
发明人： Yun Liang Ouyang , Chih Hung Chang
IPC分类号： C07F7/10
CPC分类号： C08G18/5096 , A61K31/785 , C08G18/61 , C08G18/71 , C08G18/8108 , C08G18/8116 , C08G18/831 , C08G77/46
摘要： A prepolymer for biomedical materials has the following formula: wherein X1 represents aliphatic compounds or aromatic compounds, X3 represents alkene-containing compounds, and X2 represents siloxane compounds having the following formula. In one embodiment of the present invention, n is between 1 and 20, m is between 10 and 20, and y is between 1 and 7.
摘要翻译：用于生物医学材料的预聚物具有下式：其中X1表示脂族化合物或芳族化合物，X3表示含烯烃的化合物，X2表示具有下式的硅氧烷化合物。在本发明的一个实施方案中，n为1至20，m为10至20，y为1至7。

8. 发明授权

US08303382B2 Polishing pad and method of fabrication 有权
标题翻译：抛光垫和制造方法
公开(公告)号：US08303382B2
公开(公告)日：2012-11-06
申请号：US11542270
申请日：2006-10-04
申请人： Yu-Piao Wang , Yun-Liang Ouyang
发明人： Yu-Piao Wang , Yun-Liang Ouyang
IPC分类号： B24D11/00
CPC分类号： B24B37/22 , B24B37/26 , B24D18/00
摘要： A polishing pad, comprising a mounting surface and an opposing polishing surface with a polishing pattern having at least one aperture thereon, is formed with an adhesive layer adhered to the mounting surface with uniform adhesive strength therebetween. Embodiments include applying an adhesive layer to the mounting surface with uniform pressure prior to forming the polishing pattern on the polishing surface. Embodiments also include forming the polishing pattern having at least one aperture, forming a fitter having a surface pattern opposite to the polishing pattern and having a projection, positioning the fitter on the polishing pattern so that the projection fills the aperture in the polishing pattern forming a composite having substantially parallel opposing surfaces, applying pressure to bond the adhesive layer to the mounting surface with substantially uniform adhesive strength therebetween, and removing the fitter.
摘要翻译：抛光垫，其包括安装表面和具有其上具有至少一个孔的抛光图案的相对的抛光表面，其上形成粘合剂层，粘附层具有均匀的粘合强度。实施例包括在形成研磨表面上的抛光图案之前，以均匀的压力将粘合剂层施加到安装表面。实施例还包括形成具有至少一个孔的抛光图案，形成具有与抛光图案相对的表面图案并具有突起的钳具，将钳工件定位在抛光图案上，使得突起填充抛光图案中的孔，形成复合材料具有基本上平行的相对表面，施加压力以将粘合剂层粘合到安装表面，其间具有基本上均匀的粘合强度，并且去除钳具。

9. 发明授权

US06384482B1 Method for forming a dielectric layer in a semiconductor device by using etch stop layers 有权
标题翻译：通过使用蚀刻停止层在半导体器件中形成介电层的方法
公开(公告)号：US06384482B1
公开(公告)日：2002-05-07
申请号：US09929098
申请日：2001-08-15
申请人： Chih-Sheng Yang , Kuei-chang Tsai , Chih-hung Shu , Yun-liang Ouyang
发明人： Chih-Sheng Yang , Kuei-chang Tsai , Chih-hung Shu , Yun-liang Ouyang
IPC分类号： H01L2348
CPC分类号： H01L21/76819 , H01L21/31053
摘要： The invention provides a method for forming a dielectric layer in a semiconductor device by using etch stop layers, and a semiconductor structure formed by the method. The method in accordance with the invention comprises: providing a semiconductor substrate having raised portions and recessed portions; forming a first etch stop layer covering the raised portions and the recessed portions; forming a dielectric layer covering an upper surface of the first etch stop layer, wherein the dielectric layer has a thickness substantially smaller than that of each of the raised portions; forming a second etch stop layer covering the dielectric layer; and performing a planarizing step for polishing the second etch stop layer and the dielectric layer until exposing the first etch stop layer on an upper surface of the raised portions, and remaining a plurality of remaining portions of the second etch stop layer on the planarized surface, and remaining the dielectric layer between raised portions.
摘要翻译：本发明提供了一种通过使用蚀刻停止层在半导体器件中形成电介质层的方法，以及通过该方法形成的半导体结构。根据本发明的方法包括：提供具有凸起部分和凹陷部分的半导体衬底; 形成覆盖所述凸部和所述凹部的第一蚀刻停止层; 形成覆盖所述第一蚀刻停止层的上表面的电介质层，其中所述电介质层的厚度基本上小于所述凸起部分的厚度; 形成覆盖所述电介质层的第二蚀刻停止层; 以及执行用于抛光所述第二蚀刻停止层和所述电介质层的平坦化步骤，直到在所述凸起部分的上表面上暴露所述第一蚀刻停止层，并且在所述平坦化表面上残留所述第二蚀刻停止层的多个剩余部分，并且在凸起部分之间保留介电层。

10. 发明授权

US6117780A Chemical mechanical polishing method with in-line thickness detection 有权
标题翻译：化学机械抛光方法，具有在线厚度检测
公开(公告)号：US6117780A
公开(公告)日：2000-09-12
申请号：US296520
申请日：1999-04-22
申请人： Kuei-Chang Tsai , Chin-Hsiang Chang , Li-Chun Hsien , Yun-Liang Ouyang
发明人： Kuei-Chang Tsai , Chin-Hsiang Chang , Li-Chun Hsien , Yun-Liang Ouyang
IPC分类号： B24B37/30 , B24B49/12 , H01L21/00
CPC分类号： B24B37/30 , B24B49/12 , H01L21/67271
摘要： The present invention discloses a chemical mechanical polishing method with in-line thickness detection. First, the semiconductor wafer is loaded into CMP equipment and is putted on a loading table for the preparation of a CMP process. The CMP process is performed on the wafer for polishing. The CMP process is interrupted and the thickness of a polished thin film layer is detected by using an in-line thickness measurement technique. The thickness is determined whether or not being accepted by a specification of the CMP process. As the thickness is accepted by the specification, the wafer is cleaned, dried and moved out from the CMP equipment. Alternatively, the thickness is not accepted by the specification, it must be determined whether or not the thickness is less than the low limit of the specification. As the thickness is smaller than the low limit, the wafer is cleaned, dried after it is moved out from the CMP equipment. Alternatively, the thickness is larger than the low limit and not accepted by the specification, the CMP process of the wafer must be started again.
摘要翻译：本发明公开了一种具有在线厚度检测的化学机械抛光方法。首先，将半导体晶片装载到CMP设备中，并将其放置在用于制备CMP工艺的装载台上。在抛光用晶片上进行CMP工序。 CMP工艺被中断，并且通过使用在线厚度测量技术来检测抛光的薄膜层的厚度。确定是否被CMP工艺的规格所接受的厚度。由于规格所接受的厚度，晶片被清洁，干燥并从CMP设备中移出。或者，规格不接受厚度，必须确定厚度是否小于规格的下限。当厚度小于下限时，晶片被清洁，在从CMP设备移出之后干燥。或者，厚度大于下限，并且不被说明书接受，晶片的CMP工艺必须再次启动。

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