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1. 发明申请

US20050006646A1 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device 失效
标题翻译：晶体半导体材料的制造方法和半导体器件的制造方法
公开(公告)号：US20050006646A1
公开(公告)日：2005-01-13
申请号：US10856138
申请日：2004-05-28
申请人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
发明人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
IPC分类号： C30B13/00 , C30B29/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01S3/00
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02609 , H01L21/2026 , H01L27/1281 , H01L29/045 , H01L29/78675
摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
摘要翻译：提供了包括多个半导体晶粒的结晶半导体材料的制造方法。该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于对预测。因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

2. 发明申请

US20110012146A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110012146A1
公开(公告)日：2011-01-20
申请号：US12922930
申请日：2009-03-13
申请人： Yukihisa Hitsuda , Tatsuo Ohashi
发明人： Yukihisa Hitsuda , Tatsuo Ohashi
IPC分类号： H01L33/30 , H01L33/00
CPC分类号： H01L33/405 , H01L33/007 , H01L33/32 , H01L33/40 , H01L33/44
摘要： There is provided a light-emitting device including a second electrode which exhibits a stable behavior in a process for manufacturing a light-emitting device or during an operation of a light-emitting device. A light-emitting device includes a first compound semiconductor layer 11 with an n-type conductivity type, an active layer 12 formed on the first compound semiconductor layer 11 and composed of a compound semiconductor, a second compound semiconductor layer 13 with a p-type conductivity type formed on the active layer 12, a first electrode 15 electrically connected to the first compound semiconductor layer 11, and a second electrode 14 formed on the second compound semiconductor layer 13, wherein the second electrode 14 is composed of a titanium oxide, has an electron concentration of 4×1021/cm3 or more, and reflects light emitted from the active layer.
摘要翻译：提供一种发光装置，其包括在制造发光装置的过程中或在发光装置的操作期间表现出稳定的行为的第二电极。发光装置包括具有n型导电型的第一化合物半导体层11，形成在第一化合物半导体层11上并由化合物半导体构成的有源层12，具有p型的第二化合物半导体层13 形成在有源层12上的导电类型，与第一化合物半导体层11电连接的第一电极15和形成在第二化合物半导体层13上的第二电极14，其中第二电极14由氧化钛构成，具有电子浓度为4×1021 / cm3以上，并且反射从有源层发射的光。

3. 发明授权

US06972246B2 Method for manufacturing an oriented crystalline semiconductor using a pulsed laser 失效
标题翻译：使用脉冲激光器制造取向晶体半导体的方法
公开(公告)号：US06972246B2
公开(公告)日：2005-12-06
申请号：US10856138
申请日：2004-05-28
申请人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
发明人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
IPC分类号： C30B13/00 , C30B29/06 , H01L21/20 , H01L21/268 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01S3/00
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02609 , H01L21/2026 , H01L27/1281 , H01L29/045 , H01L29/78675
摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
摘要翻译：提供了包括多个半导体晶粒的结晶半导体材料的制造方法。该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于对预测。因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

4. 发明授权

US07189665B2 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device 有权
标题翻译：晶体半导体材料的制造方法和半导体器件的制造方法
公开(公告)号：US07189665B2
公开(公告)日：2007-03-13
申请号：US11293727
申请日：2005-12-02
申请人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
发明人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
IPC分类号： H01L21/00
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02609 , H01L21/2026 , H01L27/1281 , H01L29/045 , H01L29/78675
摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
摘要翻译：提供了包括多个半导体晶粒的结晶半导体材料的制造方法。该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有大致垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层厚度的约1/4的范围内的高度，以及横向尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于对预测。因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

5. 发明申请

US20060084246A1 Manufacturing method for crystalline semiconductor material and manufacturing method for semiconductor device 有权
标题翻译：晶体半导体材料的制造方法和半导体器件的制造方法
公开(公告)号：US20060084246A1
公开(公告)日：2006-04-20
申请号：US11293727
申请日：2005-12-02
申请人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
发明人： Kazushi Nakano , Yukihisa Hitsuda , Toshio Fujino , Michinori Shiomi , Junichi Sato
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02609 , H01L21/2026 , H01L27/1281 , H01L29/045 , H01L29/78675
摘要： A manufacturing method for a crystalline semiconductor material including a plurality of semiconductor crystal grains is provided. The manufacturing method includes forming an amorphous or polycrystalline semiconductor layer on a substrate having a flat surface; forming a plurality of projections each having a side wall surface substantially perpendicular to the flat surface of the substrate, a height set in the range of about 1 nm to less than or equal to about ¼ of the thickness of the semiconductor layer, and a lateral dimension set in the range of about 3 μm to about 18 μm in a direction parallel to the flat surface of the substrate; and heating the semiconductor layer a number of times by using a pulsed laser thereby forming the crystalline semiconductor material including the crystal grains each having a specific plane orientation with respect to a direction perpendicular to the flat surface of the substrate so that the crystal grains respectively correspond to the projections. Accordingly, the position, size, and plane orientation of a crystal can be controlled by a simple step, and a crystalline semiconductor material excellent in planarity as a film can be formed.
摘要翻译：提供了包括多个半导体晶粒的结晶半导体材料的制造方法。该制造方法包括在具有平坦表面的基板上形成非晶或多晶半导体层; 形成多个突起，每个突起具有基本上垂直于基板的平坦表面的侧壁表面，设置在约1nm至小于或等于半导体层的厚度的约1/4的范围内的高度，以及横向尺寸在平行于基板的平坦表面的方向上设定在约3μm至约18μm的范围内; 并通过使用脉冲激光加热半导体层多次，从而形成晶体半导体材料，该晶体半导体材料包括相对于垂直于衬底的平坦表面的方向具有特定平面取向的晶粒，使得晶粒分别对应于对预测。因此，可以通过简单的步骤来控制晶体的位置，尺寸和平面取向，并且可以形成作为膜的平面性优异的结晶半导体材料。

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