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    • 10. 发明授权
    • Method of producing photovoltaic element
    • 生产光电元件的方法
    • US06221685B1
    • 2001-04-24
    • US09203361
    • 1998-12-02
    • Hirofumi IchinoseTsutomu MurakamiYukie Ueno
    • Hirofumi IchinoseTsutomu MurakamiYukie Ueno
    • H01L2100
    • H01L21/67086H01L21/67075
    • The present invention provides a method of producing a photovoltaic element, which comprises a step of immersing a photovoltaic element having at least a first electrode layer, a semiconductor layer and a second electrode layer formed on a substrate into an electrolytic solution, and removing a short circuit current path caused by a defect in the photovoltaic element under the effect of an electric field, wherein the amount of a first ingredient and the amount of a second ingredient contained in the electrolytic solution are adjusted to control the concentration of hydrogen ions in the electrolytic solution, wherein the constituent substance of the second electrode layer is electrically dissolved by the first ingredient, and thereby it also provides a method of producing photovoltaic elements which is capable of reducing a leakage current caused by defect portions such as pin-holes existing in the photovoltaic elements with a large area to obtain photovoltaic elements with excellent photovoltage generation characteristics under a low illuminance.
    • 本发明提供了一种光电元件的制造方法,其特征在于,具有:将具有至少形成在基板上的第一电极层,半导体层和第二电极层的光电元件浸渍到电解液中的步骤, 在电场效应下由光电元件的缺陷引起的电路电流路径,其中第一成分的量和电解液中包含的第二成分的量被调节以控制电解液中氢离子的浓度 溶液,其中第二电极层的构成物质被第一成分电解,从而还提供一种生产光电元件的方法,该光电元件能够减少由存在于第二电极层的缺陷部分 具有大面积光伏元件,获得优异的光电元件 低照度下的电压产生特性。