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1. 发明申请

US20140141576A1 Manufacturing Method for Switch and Array Substrate 有权
标题翻译：开关阵列基板的制造方法
公开(公告)号：US20140141576A1
公开(公告)日：2014-05-22
申请号：US13701863
申请日：2012-11-23
申请人： Yu-Lien Chou , Po-Lin Chen
发明人： Yu-Lien Chou , Po-Lin Chen
IPC分类号： H01L29/66 , H01L21/8234
CPC分类号： H01L29/458 , H01L29/66765
摘要： The present invention discloses a manufacturing method for a switch and an array substrate. The method comprises: firstly, forming sequentially a first metal layer, an insulating layer, a semiconductor layer, an ohmic contact layer, a second metal layer, a third metal layer and a photoresist layer on a base substrate; after patterning the photoresist layer, etching the third metal layer and the second metal layer to form the input electrode and the output electrode of the switch; using a stripper comprising at least 30% by weight of amine in order to remove the photoresist layer and the residual second metal layer; and finally, etching the ohmic contact layer. Through the above steps, the present invention can avoid the electrical abnormality of the switch and increase process yield of the array substrate.
摘要翻译：本发明公开了一种开关和阵列基板的制造方法。该方法包括：首先在基底基板上依次形成第一金属层，绝缘层，半导体层，欧姆接触层，第二金属层，第三金属层和光致抗蚀剂层; 在图案化光致抗蚀剂层之后，蚀刻第三金属层和第二金属层以形成开关的输入电极和输出电极; 使用包含至少30重量％的胺的汽提器以除去光致抗蚀剂层和残留的第二金属层; 最后蚀刻欧姆接触层。通过上述步骤，本发明可以避免开关的电气异常并提高阵列基板的工艺成品率。

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