专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070037894A1 Multifunctional menomers and polyarylene compsotions therefrom 审中-公开
标题翻译：多功能menomers和聚亚芳基compsotions从中
公开(公告)号：US20070037894A1
公开(公告)日：2007-02-15
申请号：US10571810
申请日：2004-09-15
申请人： Jerry Hahnfeld , Youngfu Li , Q. Niu
发明人： Jerry Hahnfeld , Youngfu Li , Q. Niu
IPC分类号： C08J9/26
CPC分类号： C07C45/74 , C07C45/28 , C07C45/46 , C07C45/68 , C07C49/683 , C07C49/753 , C07C49/798 , C07C49/84 , C07C2601/10 , C07C2602/22 , C08F212/08 , C08F257/02 , C08G61/12 , C08J9/26 , C08J2201/046 , C08J2365/00 , C08F212/32 , C08F212/34
摘要： A compound comprising i) one or more dienophile groups (A-functional groups), ii) one or more ring structures comprising two conjugated carbon-to-carbon double bonds and a leaving group L (B-functional groups), and iii) one or more addition polymerizable, telechelic, or graftable functional groups, excluding groups capable of cycloaddition reactions with acetylenic- or conjugated diene functionality (C′-functional groups), characterized in that the A-functional group of one monomer is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second monomer to thereby form a polymer.
摘要翻译：的化合物，其包含：i）一种或多种亲双烯体基团（A-官能团），ii）一个或多个环结构，包括两个共轭碳 - 碳双键和离去基团L（B-官能团），和iii）一种或更多的可加聚合的，遥爪的或可接枝的官能团，不包括能够与炔属 - 或共轭二烯官能团（C 1 - 官能团）进行环加成反应的基团，其特征在于一种单体的A-官能团能够在环加成反应与第二单体的B官能团反应从而形成聚合物。

2. 发明授权

US07598114B2 Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices 有权
标题翻译：用于制造气隙半导体器件的牺牲苯并环丁烯/降冰片烯聚合物
公开(公告)号：US07598114B2
公开(公告)日：2009-10-06
申请号：US10544428
申请日：2004-01-30
申请人： Youngfu Li , Robert A. Kirchhoff , Jason Q. Niu , Kenneth L. Foster
发明人： Youngfu Li , Robert A. Kirchhoff , Jason Q. Niu , Kenneth L. Foster
IPC分类号： H01L51/40
CPC分类号： H01L21/02118 , H01L21/312 , H01L21/7682
摘要： A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.
摘要翻译：一种通过以下步骤在半导体结构内形成气隙的方法：（a）使用牺牲聚合物占据半导体结构中的空间; 步骤（a）的牺牲聚合物是：（a）5-亚乙基-2-降冰片烯和乙烯基苯并环丁烯的共聚物（或者（b）加热半导体结构以分解在半导体结构内留下空隙的牺牲聚合物，其中步骤乙烯基苯并环丁烯衍生物）; 或（b）5-亚乙基-2-降冰片烯与5-（3-苯并环丁基）-2-降冰片烯的共聚物; 或（c）5-（3-苯并环丁基）-2-降冰片烯的聚合物。另外，具有位于导体线之间的牺牲聚合物的半导体结构，其中所述牺牲聚合物是：（a）5-亚乙基-2-降冰片烯和乙烯基苯并环丁烯（或乙烯基苯并环丁烯衍生物）的共聚物; 或（b）5-亚乙基-2-降冰片烯与5-（3-苯并环丁基）-2-降冰片烯的共聚物; 或（c）5-（3-苯并环丁基）-2-降冰片烯的聚合物。

3. 发明申请

US20060246681A1 Sacrificial benzocyclobutene/norbornene polymers for making air gap semiconductor devices 有权
公开(公告)号：US20060246681A1
公开(公告)日：2006-11-02
申请号：US10544428
申请日：2004-01-30
申请人： Youngfu Li , Robert Kirchhoff , Jason Niu , Kenneth Foster
发明人： Youngfu Li , Robert Kirchhoff , Jason Niu , Kenneth Foster
IPC分类号： H01L21/76
CPC分类号： H01L21/02118 , H01L21/312 , H01L21/7682
摘要： A method of forming an air gap within a semiconductor structure by the steps of: (a) using a sacrificial polymer to occupy a space in a semiconductor structure; and (b) heating the semiconductor structure to decompose the sacrificial polymer leaving an air gap within the semiconductor structure, wherein the sacrificial polymer of step (a) is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene. In addition, a semiconductor structure, having a sacrificial polymer positioned between conductor lines, wherein the sacrificial polymer is: (a) a copolymer of 5-ethylidene-2-norbornene and vinylbenzocyclobutene (or a vinylbenzocyclobutene derivative); or (b) a copolymer of 5-ethylidene-2-norbornene and 5-(3benzocyclobutylidene)-2-norbornene; or (c) a polymer of 5-(3benzocyclobutylidene)-2-norbornene.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式