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    • 7. 发明申请
    • Silicon film bulk acoustic wave device and process of the same
    • 硅膜体声波器件及其工艺相同
    • US20060186759A1
    • 2006-08-24
    • US10565255
    • 2004-07-21
    • Hyeong KimJae bin LeeHeung KimKi Bong YeoYoung-Soo Lee
    • Hyeong KimJae bin LeeHeung KimKi Bong YeoYoung-Soo Lee
    • H01L41/08
    • H03H3/02H03H9/02133H03H9/02149H03H9/173
    • The present invention relates to a film bulk acoustic wave device and a method of manufacturing the same, wherein comprising an acoustic reflective layer which is formed on a substrate by removing a sacrificial layer on the substrate and becomes an empty space; an oxidation protective film or etch protecting film which is formed in a pattern that divides a resonance region to form the acoustic reflective layer on the sacrificial layer; a thermal oxidation film which is formed by partially thermally oxidizing the sacrificial layer in an electrode region where the oxidation protective film or the etch protecting film is not formed; and a lower electrode, a piezoelectric thin film, and an upper electrode all of which are disposed on the thermal oxide. Further, the present invention is directed to a method of manufacturing the same
    • 薄膜压电元件及其制造方法技术领域本发明涉及一种薄膜压电元件及其制造方法,其特征在于,具有:通过除去所述基板上的牺牲层而形成空间而形成在基板上的声反射层; 氧化保护膜或蚀刻保护膜,其以划分谐振区域以在牺牲层上形成声反射层的图案形成; 通过在没有形成氧化保护膜或蚀刻保护膜的电极区域中部分地热氧化牺牲层而形成的热氧化膜; 以及全部都设置在热氧化物上的下电极,压电薄膜和上电极。 此外,本发明涉及其制造方法