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1. 发明授权

US08895425B2 Method of forming channel layer of electric device and method of manufacturing electric device using the same 有权
标题翻译：形成电气装置通道层的方法及其制造方法
公开(公告)号：US08895425B2
公开(公告)日：2014-11-25
申请号：US13616773
申请日：2012-09-14
申请人： Young June Park , Seok Ha Lee , Jun Ho Chun , Yeonkyu Choi
发明人： Young June Park , Seok Ha Lee , Jun Ho Chun , Yeonkyu Choi
IPC分类号： H01L21/20 , H01L21/3205 , C25D5/00 , C25D7/12 , C25D3/02 , H01L21/208
CPC分类号： H01L21/208 , C25D3/02 , C25D5/02 , C25D5/54 , C25D7/00 , C25D7/12 , C25D21/12 , H01L29/42384 , H01L29/66742 , H01L29/786 , H01L29/78603 , H01L29/78696
摘要： A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.
摘要翻译：提供了根据实施例的形成电子设备的沟道层的方法。首先，提供在基板上具有绝缘层的导电性基板。导电性基板和被镀金属用作各自的电极，在电解液中进行电镀。在这种情况下，由导电性基板通过绝缘层的隧道电流提供的电子与电解液中的金属离子结合，在绝缘层上形成金属沟道层。

2. 发明申请

US20130001895A1 METHODS AND DEVICES FOR SEALING STORAGE DEVICES 审中-公开
标题翻译：用于密封存储设备的方法和设备
公开(公告)号：US20130001895A1
公开(公告)日：2013-01-03
申请号：US13535463
申请日：2012-06-28
申请人： JUNG MOO SON , Young June Park , Sung Yong Park
发明人： JUNG MOO SON , Young June Park , Sung Yong Park
IPC分类号： F16J15/10 , G11B5/10
CPC分类号： G11B25/043 , G11B33/1466
摘要： An apparatus includes a gasket disposed between a base and a flexible printed circuit bracket. A stiction between the gasket and flexible printed circuit bracket is greater than a stiction between the gasket and the base. The difference in stiction can be provided by differing materials and/or differing contact areas.
摘要翻译：一种装置包括设置在基座和柔性印刷电路支架之间的垫圈。垫片和柔性印刷电路支架之间的粘连大于垫片和基座之间的粘性。可以通过不同的材料和/或不同的接触区域来提供粘性的差异。

3. 发明授权

US08072226B2 Nanostructure sensors 有权
标题翻译：纳米结构传感器
公开(公告)号：US08072226B2
公开(公告)日：2011-12-06
申请号：US11995916
申请日：2007-08-06
申请人： Young June Park , Jun Ho Cheon , Sung Min Seo
发明人： Young June Park , Jun Ho Cheon , Sung Min Seo
IPC分类号： G01R31/02
CPC分类号： G01N27/127 , G01N27/4146
摘要： Embodiments feature a sensor including a nanostructure and methods for manufacturing the same. In some embodiments, a sensor includes a substrate, a first electrode disposed on the substrate, and a second electrode disposed on the substrate. The second electrode is spaced apart from the first electrode and surrounding the first electrode. The sensor includes at least one nanostructure contacting the first electrode and the second electrode, in which the nanostructure is configured to vary an electrical characteristic according to an object to be sensed.
摘要翻译：实施例的特征在于包括纳米结构的传感器及其制造方法。在一些实施例中，传感器包括衬底，设置在衬底上的第一电极和设置在衬底上的第二电极。第二电极与第一电极间隔开并围绕第一电极。传感器包括与第一电极和第二电极接触的至少一个纳米结构，其中纳米结构被配置成根据待感测的物体改变电特性。

4. 发明申请

US20090158804A1 SYSTEM FOR MANUFACTURING LINEAR GEAR AND THE METHOD THEREOF 有权
标题翻译：制造线性齿轮的系统及其方法
公开(公告)号：US20090158804A1
公开(公告)日：2009-06-25
申请号：US12302310
申请日：2007-06-07
申请人： Hee-Won Jung , Young-June Park , Gil-Yong Yeom , Dong-Sam Kim , Jung-Su Lee
发明人： Hee-Won Jung , Young-June Park , Gil-Yong Yeom , Dong-Sam Kim , Jung-Su Lee
IPC分类号： B21D37/16 , B21K1/30
CPC分类号： B21K1/767 , B21H5/00 , Y10T29/49467
摘要： The present invention relates to a system for and a method of manufacturing a linear gear (rack gear), in which a forming roll and a guide roll are used to form gear teeth in a sequential manner so as not to require a high load, thereby enabling to easily manufacture the rack gear. A system for manufacturing a rack gear according to the invention includes a forming roll having a convexo-concave portion formed on a part of the surface contacting with a linear bar, a guide roll adapted to roll while facing the forming roll, and at least one support member for supporting the linear bar so as to allow the linear bar to linearly move. A method of manufacturing a rack gear according to the invention includes a first step of passing a linear bar through between a pair of rollers provided in front of a forming roll and a guide roll, a second step of charging the linear bar into a charging hole between the forming roll and the guide roll, a third step of rolling the forming roll and the guide roll to partly form teeth on the outer circumferential surface of the linear bar, and a fourth step of rolling the forming roll and the guide roll forward or backward to discharge the linear bar.
摘要翻译：本发明涉及一种用于制造线性齿轮（齿条）的系统和方法，其中使用成形辊和导辊以顺序方式形成齿轮齿以不需要高负载，从而能够容易地制造齿条。根据本发明的用于制造齿条的系统包括：成形辊，其具有形成在与直线杆接触的表面的一部分上的凸凹部，适于在面向成形辊的同时滚动的导辊;以及至少一个用于支撑线性杆的支撑构件，以允许线性杆线性移动。根据本发明的制造齿条的方法包括：使线性杆穿过设置在成形辊前面的一对辊和引导辊之间的第一步骤，将线性条装入充电孔的第二步骤在成形辊和引导辊之间的第三步骤，使成形辊和引导辊滚动以在直线杆的外周面上部分地形成齿;以及第四步骤，将成形辊和引导辊向前滚动或向后排出线性杆。

5. 发明申请

US20050205939A1 Transistor of volatile memory device with gate dielectric structure capable of trapping charges and method for fabricating the same 审中-公开
标题翻译：具有能够俘获电荷的栅介电结构的易失性存储器件的晶体管及其制造方法
公开(公告)号：US20050205939A1
公开(公告)日：2005-09-22
申请号：US10883184
申请日：2004-06-30
申请人： Sang-Don Lee , Yil-Wook Kim , Jin-Hong Ahn , Young-June Park
发明人： Sang-Don Lee , Yil-Wook Kim , Jin-Hong Ahn , Young-June Park
IPC分类号： H01L27/10 , G11C11/401 , H01L21/265 , H01L21/28 , H01L21/314 , H01L21/336 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L21/8246 , H01L27/108 , H01L29/51 , H01L29/76 , H01L29/78 , H01L29/792
CPC分类号： H01L21/26506 , H01L21/265 , H01L21/26513 , H01L21/28202 , H01L21/823857 , H01L27/10873 , H01L27/10894 , H01L27/11568 , H01L29/513 , H01L29/518 , H01L29/792
摘要： The present invention relates to a transistor of a volatile memory device with gate dielectric structure capable of trapping charges and a method for fabricating the same. The transistor in a cell region of a volatile memory device includes a substrate of a first conductive type; a gate dielectric structure capable of trapping charges and formed on the substrate; a gate formed on the gate dielectric structure; a gate insulation layer formed on the gate; a source/drain of a second conductive type formed in a predetermined region of the substrate disposed beneath each lateral side of the gate; and a channel ion implantation region of the first conductive type formed in a predetermined region of the substrate disposed beneath the gate.
摘要翻译：本发明涉及具有能够俘获电荷的栅介电结构的易失性存储器件的晶体管及其制造方法。易失性存储器件的单元区域中的晶体管包括第一导电类型的衬底; 能够俘获电荷并形成在基板上的栅介质结构; 形成在栅介质结构上的栅极; 形成在栅极上的栅极绝缘层; 第二导电类型的源极/漏极，形成在设置在栅极的每个侧面下方的衬底的预定区域中; 以及第一导电类型的沟道离子注入区域，形成在设置在栅极下方的衬底的预定区域中。

6. 发明授权

US09034265B2 Biomolecular sensor with plural metal plates and manufacturing method thereof 有权
标题翻译：具有多个金属板的生物分子传感器及其制造方法
公开(公告)号：US09034265B2
公开(公告)日：2015-05-19
申请号：US13062275
申请日：2009-05-22
申请人： Yong Hyup Kim , Young June Park , Jung Woo Ko , Tae June Kang , Seok Hyang Kim , Jae Heung Lim
发明人： Yong Hyup Kim , Young June Park , Jung Woo Ko , Tae June Kang , Seok Hyang Kim , Jae Heung Lim
IPC分类号： G01N27/06 , B82Y15/00 , G01N27/414
CPC分类号： B82Y15/00 , G01N27/4145 , G01N27/4146 , Y10S977/957
摘要： Disclosed are a biomolecular sensor and a method of fabricating the same having high sensitivity and resolution by using a plurality of metal plates that change electrical properties of a plurality of nanostructures according to the attachment of biomolecules. The biomolecular sensor includes a substrate, first and second electrodes disposed to be spaced apart from each other on the substrate, a plurality of nanostructures disposed on the substrate to connect the first and second electrodes to each other, and a plurality of metal plates that change electrical properties of the plurality of nanostructures according to the attachment of biomolecules.
摘要翻译：公开了通过使用根据生物分子的附着改变多个纳米结构的电特性的多个金属板的生物分子传感器及其制造方法，具有高灵敏度和分辨率。生物分子传感器包括基板，设置成在基板上彼此间隔开的第一和第二电极，设置在基板上的多个纳米结构，以将第一和第二电极彼此连接;以及多个金属板，其改变根据生物分子的附着，多个纳米结构的电学性质。

7. 发明申请

US20140080274A1 METHOD OF FORMING CHANNEL LAYER OF ELECTRIC DEVICE AND METHOD OF MANUFACTURING ELECTRIC DEVICE USING THE SAME 有权
标题翻译：形成电气设备的通道层的方法及其制造方法
公开(公告)号：US20140080274A1
公开(公告)日：2014-03-20
申请号：US13616773
申请日：2012-09-14
申请人： Young June PARK , Seok Ha LEE , Jun Ho CHUN , Yeonkyu CHOI
发明人： Young June PARK , Seok Ha LEE , Jun Ho CHUN , Yeonkyu CHOI
IPC分类号： C25D5/02 , H01L21/336
CPC分类号： H01L21/208 , C25D3/02 , C25D5/02 , C25D5/54 , C25D7/00 , C25D7/12 , C25D21/12 , H01L29/42384 , H01L29/66742 , H01L29/786 , H01L29/78603 , H01L29/78696
摘要： A method of forming a channel layer of an electric device according to an embodiment is provided. First, a conductive substrate including an insulating layer on the substrate is provided. The conductive substrate and a metal to be plated are used as respective electrodes to carry out electroplating within an electrolyte solution. In this case, electrons provided by a tunneling current passing through the insulating layer from the conductive substrate are bonded with ions of the metal within the electrolyte solution to form a metal channel layer on the insulating layer.
摘要翻译：提供了根据实施例的形成电子设备的沟道层的方法。首先，提供在基板上具有绝缘层的导电性基板。导电性基板和被镀金属用作各自的电极，在电解液中进行电镀。在这种情况下，由导电性基板通过绝缘层的隧道电流提供的电子与电解液中的金属离子结合，在绝缘层上形成金属沟道层。

8. 发明申请

US20070193659A1 Method for nitriding metal in salt bath and metal manufactured using the same 审中-公开
标题翻译：盐浴中金属氮化和使用其制造的金属的方法
公开(公告)号：US20070193659A1
公开(公告)日：2007-08-23
申请号：US11588370
申请日：2006-10-27
申请人： Hee Won Jung , Dong Nyung Lee , Young June Park , Dong Sam Kim , Kyu Hwan Oh , Yinzhong Shen
发明人： Hee Won Jung , Dong Nyung Lee , Young June Park , Dong Sam Kim , Kyu Hwan Oh , Yinzhong Shen
IPC分类号： C23C8/26
CPC分类号： C23C8/50
摘要： Provided is a method for nitriding a metal in a salt bath by using a non-cyanide salt and a nitrided metal manufactured using the same. The method includes the steps of: immerging at least one salt selected from the group consisting of KNO3, KNO2, Ca(NO3)2, NaNO3 and NaNO2 into the salt bath; melting the salt by heating and maintaining the molten salt at a predetermined temperature; and submerging the metal in the salt bath. Nitriding in non-cyanide salts, such as potassium nitrate (KNO3), potassium nitrite (KNO2), sodium nitrate (NaNO3), sodium nitrite (NaNO2), calcium nitrate (Ca(NO3)2) and their mixtures, is capable of solving an environmental pollution problem and reducing a cost. Also, the method is capable of increasing nitrided depth of the metal two to six times compared to conventional nitriding methods. As a result, the method can be carried out in various application fields.
摘要翻译：提供了通过使用非氰化物盐和使用其制造的氮化金属在盐浴中氮化金属的方法。该方法包括以下步骤：将至少一种选自KNO 3，KNO 2，Ca（NO 3 3）2的盐， 2 N 2，NaNO 3和NaNO 2进入盐浴; 通过加热和保持熔盐在预定温度来熔化盐; 并将金属浸入盐浴中。在非氰化物盐如硝酸钾（KNO 3 N），亚硝酸钾（KNO 2），硝酸钠（NaNO 3）中氮化，，亚硝酸钠（NaNO 2），硝酸钙（Ca（NO 3 3）2）及其混合物，能够解决环境污染问题并降低成本。此外，与常规氮化方法相比，该方法能够将金属的氮化深度提高两到六倍。结果，该方法可以在各种应用领域中进行。

9. 发明授权

US06303441B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06303441B1
公开(公告)日：2001-10-16
申请号：US09306915
申请日：1999-05-07
申请人： Young June Park , Jong Ho Lee , Hyeok Jae Lee
发明人： Young June Park , Jong Ho Lee , Hyeok Jae Lee
IPC分类号： H01L21336
CPC分类号： H01L29/66613 , H01L21/84 , H01L27/1203 , H01L29/66772 , H01L29/78621 , H01L29/78696
摘要： A semiconductor device and a method for fabricating the same is disclosed, which minimizes device degradation, minimizes noises, and simplifies the fabrication process. The device includes a substrate having a first semiconductor layer, a buried insulating film, and a second semiconductor layer stacked; a field oxide film for separating the second semiconductor layer into a first region and a second region; a recess region formed in a particular region of the second region; gate insulating films and gate electrodes formed in stacks on each of a particular region in the first region and the recess region in the second region; first impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the first region; and second impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the recess region in the second region so that the second semiconductor layer below the gate electrode is fully depleted.
摘要翻译：公开了一种半导体器件及其制造方法，其使器件劣化最小化，使噪声最小化并简化制造工艺。该器件包括具有第一半导体层，埋入绝缘膜和堆叠的第二半导体层的衬底; 用于将第二半导体层分离成第一区域和第二区域的场氧化物膜; 形成在所述第二区域的特定区域中的凹部区域; 在第一区域中的特定区域和第二区域中的凹陷区域中的每一个上堆叠形成栅极绝缘膜和栅电极; 在所述第一区域中的所述栅电极的两侧上形成在所述第二半导体层的表面中的第一杂质区; 以及在所述第二区域中的所述凹部区域中的所述栅电极的两侧上形成在所述第二半导体层的表面中的第二杂质区域，使得所述栅电极下方的所述第二半导体层完全耗尽。

10. 发明授权

US08917079B2 Reference potential adjustment device and a measuring device equipped with the same 有权
标题翻译：参考电位调节装置和配备有该电位的测量装置
公开(公告)号：US08917079B2
公开(公告)日：2014-12-23
申请号：US13637789
申请日：2011-02-16
申请人： Jin Hong Ahn , Young June Park
发明人： Jin Hong Ahn , Young June Park
IPC分类号： G01R17/02 , G01R19/00 , B82Y15/00 , G01R1/28 , G01N27/414 , G01N27/48
CPC分类号： B82Y15/00 , G01N27/4146 , G01N27/48 , G01R1/28 , G01R19/0084 , Y10S977/742
摘要： A reference potential adjusting apparatus is provided. The reference potential adjusting apparatus includes a reference potential measuring unit configured to measure a potential of a solution, a counter electrode disposed in the solution, and configured to change the potential of the solution through oxidation-reduction reactions with the solution, and a comparator configured to compare a measurement voltage provided by the reference voltage measuring unit to a reference voltage provided by a reference voltage supply unit, and to adjust reactions of the counter electrode with the solution according to the result of the comparison. The reference potential measuring unit includes a reference electrode, a common electrode disposed to be spaced apart from the reference electrode, and at least one nano structure contacting the reference electrode and the common electrode, and having electrical conductivity changing according to the potential of the solution.
摘要翻译：提供了一种参考电位调节装置。参考电位调节装置包括：配置为测量溶液电位的参考电位测量单元，设置在溶液中的对电极，并且被配置为通过与溶液的氧化还原反应来改变溶液的电位，并且配置有比较器将由参考电压测量单元提供的测量电压与由参考电压供应单元提供的参考电压进行比较，并根据比较结果调整对电极与溶液的反应。参考电位测量单元包括参考电极，设置成与参考电极间隔开的公共电极以及与参考电极和公共电极接触的至少一个纳米结构，并根据溶液的电位而变化的电导率。

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