会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Medium conveying apparatus
    • 中型输送设备
    • US07431292B2
    • 2008-10-07
    • US10849076
    • 2004-05-19
    • Youichi Goto
    • Youichi Goto
    • B65H5/02
    • B65H5/062
    • A medium conveying apparatus has: a conveying roller shaft arranged so as to be movable vertically; a pressing member which presses the conveying roller shaft in plural positions; and an urging member which urges the pressing member toward a conveying path of a medium. The whole pressing member is pushed up when the medium is inserted and a part of the pressing member is pushed up. Since the pressing member presses the conveying roller shaft in the medium width direction with a uniform pressing force, the uniform pressing force is applied to the medium in the width direction. The occurrence of a variation in the conveying forces and the occurrence of the oblique movement of the medium can be avoided. The medium can be stabilized and conveyed with the sufficient conveying force.
    • 介质输送装置具有:输送辊轴,其设置成可垂直移动; 按压构件,其以多个位置按压输送辊轴; 以及推动构件,其朝向介质的输送路径推压按压构件。 当插入介质并且按压构件的一部分被向上推时,整个按压构件被向上推。 由于按压构件以均匀的按压力在中等宽度方向上按压输送辊轴,所以在宽度方向上对介质施加均匀的按压力。 可以避免输送力的变化的发生和介质的倾斜运动的发生。 介质可以稳定并以足够的输送力输送。
    • 2. 发明授权
    • Method of etching and anti-reflection film using substituted hydrocarbon with halogen gas
    • 使用卤素气体取代的烃的蚀刻和抗反射膜的方法
    • US06787457B2
    • 2004-09-07
    • US10107495
    • 2002-03-27
    • Shusaku YanagawaMasatsugu IkedaKenichi KuboYouichi Goto
    • Shusaku YanagawaMasatsugu IkedaKenichi KuboYouichi Goto
    • H01L214763
    • H01L21/31138H01L21/31144
    • A portion, positioned at an opening portion of a resist, of an anti-reflection film is etched using an etching gas containing a substituted hydrocarbon with a halogen. At the time of etching of the anti-reflection film, a carbon component of the substituted hydrocarbon with a halogen is formed as a carbonaceous deposit on side walls, less irradiated with ions, of the opening portion of the resist, and on side walls of an opening portion, formed by etching, of the anti-reflection film. The deposit acts as a side wall blocking film, to suppress lateral extension of the opening portion of the resist and the opening portion of the anti-reflection film by etching, thus allowing anisotropic etching of the anti-reflection film. With this etching method, it is possible to etch the anti-reflection film with a resist taken as a mask while suppressing a variation in pattern dimension.
    • 使用包含取代的烃与卤素的蚀刻气体蚀刻位于抗蚀剂的开口部分的防反射膜的一部分。 在抗反射膜的蚀刻时,被卤素取代的烃的碳成分形成为侧壁上的碳质沉积物,较少被离子照射的抗蚀剂的开口部分以及抗蚀剂的开口部分的侧壁 通过蚀刻形成防反射膜的开口部。 沉积物作为侧壁阻挡膜,通过蚀刻来抑制抗蚀剂的开口部分和防反射膜的开口部分的横向延伸,从而允许抗反射膜的各向异性蚀刻。 利用该蚀刻方法,可以在抑制图案尺寸的变化的同时,用抗蚀剂作为掩模来蚀刻抗反射膜。