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1. 发明授权

US09174454B2 Liquid ejection head and liquid ejection apparatus 有权
标题翻译：液体喷射头和液体喷射装置
公开(公告)号：US09174454B2
公开(公告)日：2015-11-03
申请号：US13215551
申请日：2011-08-23
申请人： Naoko Tsujiuchi , Kiyomitsu Kudo , Tomotsugu Kuroda , Yosuke Takagi
发明人： Naoko Tsujiuchi , Kiyomitsu Kudo , Tomotsugu Kuroda , Yosuke Takagi
IPC分类号： B41J2/175 , B41J29/02
CPC分类号： B41J2/17509 , B41J2/17513 , B41J2/1752 , B41J29/02
摘要： A liquid ejection apparatus includes a liquid supply member having a plurality of liquid supply passages, a connecting surface having a plurality of connecting portions connected to the liquid supply passages, a first positioning portion configured to determine relative positions between the liquid supply passages and the connecting portions in one direction along the connecting surface, and a second positioning portion configured to determine relative positions between the liquid supply passages and the connecting portions in the one direction and an other direction perpendicular to the one direction. A first distance between centers of gravity of the first positioning portion and the connecting portion farthest from the first positioning portion is longer than a second distance between centers of gravity of the second positioning portion and the connecting portion farthest from the second positioning portion.
摘要翻译：液体喷射装置包括具有多个液体供给通道的液体供给部件，具有与液体供给通道连接的多个连接部的连接面，配置为确定液体供给通路与连接部之间的相对位置的第一定位部以及第二定位部，被配置为确定在一个方向和垂直于该一个方向的另一方向上的液体供给通道和连接部之间的相对位置。第一定位部分的重心和距离第一定位部分最远的连接部分之间的第一距离比第二定位部分的重心和距离第二定位部分最远的连接部分之间的第二距离长。

2. 发明授权

US5939755A Power IC having high-side and low-side switches in an SOI structure 失效
标题翻译：具有SOI结构的高侧和低侧开关的功率IC
公开(公告)号：US5939755A
公开(公告)日：1999-08-17
申请号：US655600
申请日：1996-05-30
申请人： Yoshinori Takeuchi , Yosuke Takagi
发明人： Yoshinori Takeuchi , Yosuke Takagi
IPC分类号： H01L21/762 , H01L27/12 , H01L29/786 , H01L27/01 , H01L29/00
CPC分类号： H01L27/1203
摘要： A power IC having an SOI structure including at least a supporting substrate as a bottom layer, a substrate insulating film, an SOI conductive film, an SOI insulating film, and an Si film. The Si film serving as a top layer of the SOI structure is divided into a plurality of active layers by element isolation dielectric regions, and a desired semiconductor element is formed in each active layer. A total capacitance between each active layer and the supporting substrate is small and an inversion layer formed at a bottom of the active layer in the conventional SOI substrate is prevented from being induced. The power IC is constituted at least by an element A in a first active layer and an element B in a second active layer operating in association with the element A. The first active layer is electrically connected to the SOI conductive film just under the first and second active layers. A potential difference is prevented from being applied to the second active layer of the element B upon operation of the element A. With this arrangement, even if an operating voltage of the power IC is raised, independent operation of each element is retained. Furthermore, a low on-resistance of an output stage power-element is realized, and the device characteristics such as high speed operation and high conversion efficiency are provided.
摘要翻译：具有至少包括作为底层的支撑基板的SOI结构的电力IC，基板绝缘膜，SOI导电膜，SOI绝缘膜和Si膜。用作SOI结构的顶层的Si膜通过元件隔离电介质区域分成多个有源层，并且在每个有源层中形成期望的半导体元件。每个有源层和支撑衬底之间的总电容小，并且防止形成在常规SOI衬底中的有源层的底部的反型层被引发。功率IC至少由第一有源层中的元件A和与元件A相关联的第二有源层中的元件B构成。第一有源层与第一有源层正下方的SOI导电膜电连接，第二活性层。在元件A的操作时，阻止电位差施加到元件B的第二有源层。通过这种布置，即使电源IC的工作电压升高，也保持了每个元件的独立操作。此外，实现了输出级功率元件的低导通电阻，并且提供了诸如高速操作和高转换效率的器件特性。

3. 发明授权

US5804859A Power semiconductor device having over-current protection 失效
标题翻译：功率半导体器件具有过流保护功能
公开(公告)号：US5804859A
公开(公告)日：1998-09-08
申请号：US668233
申请日：1996-06-21
申请人： Hitoshi Takahashi , Yosuke Takagi
发明人： Hitoshi Takahashi , Yosuke Takagi
IPC分类号： H01L21/60 , H03K17/082 , H03K17/12 , H01L23/62
CPC分类号： H03K17/127 , H01L24/49 , H03K17/0822 , H03K17/122 , H01L2224/05554 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091
摘要： A semiconductor device having an input terminal and an output terminal includes at least one high power device for supplying output current as an output section, and over-current limiting circuits, each including a over-current detection circuit, for limiting the amount of each current flowing through a plurality of bonding wires by which the output terminal is connected to an external terminal, to a current value of a desired amount or less. Thereby, an over-current condition where the current value is over an allowable current value, is avoided and blowing the bonding wire of the device can be prevented.
摘要翻译：具有输入端子和输出端子的半导体器件包括至少一个用于提供输出电流的高功率器件作为输出部分，并且每个包括过电流检测电路的过流限制电路用于限制每个电流的量流过多个输出端子连接到外部端子的接合线到期望量或更小的电流值。由此，避免了电流值超过容许电流值的过电流状态，并且能够防止装置的接合线的吹出。

4. 发明授权

US5095173A Process for isolating xylene isomer(s) and/or ethylbenzene and inclusion-complexing agent for use in isolation of xylene isomer(s) and/or ethylbenzene 失效
标题翻译：用于分离XYLENE异构体和/或乙烯苯和包含复合物的方法用于分离XYLENE异构体和/或乙苯
公开(公告)号：US5095173A
公开(公告)日：1992-03-10
申请号：US583427
申请日：1990-09-17
申请人： Isamu Uemasu , Yosuke Takagi , Makoto Chiwa
发明人： Isamu Uemasu , Yosuke Takagi , Makoto Chiwa
IPC分类号： C08B37/16 , C07C7/152 , C07C15/073 , C07C15/08
CPC分类号： C07C7/152
摘要： A mixture of xylene isomers or a mixture of a xylene isomer(s) and ethylbenzene is brought into contact with at least one specific substituted .alpha.-cyclodextrin to form an inclusion complex(es) of the substituted .alpha.-cyclodextrin with a xylene isomer or ethylbenzene included therein, from which the xylene isomer(s) and/or ethylbenzene is then extracted to isolate, or separate, the same. Inclusion-complexing agents usable in isolation, or separation, of the xylene isomer(s) and/or ethylbenzene are substitited .alpha.-cyclodextrin in the form of .alpha.-cyclodextrin having the hydrogen atom of at least one hydroxyl group thereof substituted with at least one member selected from the group consisting of a glucosyl group, a maltosyl group, maltooligosaccharide residues, a hydroxyethyl group, a hydroxypropyl group, a methyl group, a sulfonic group, alkylenesulfonic groups, and carboxyalkyl groups.
摘要翻译：二甲苯异构体或二甲苯异构体和乙苯的混合物的混合物与至少一种特定的取代的α-环糊精接触以与二甲苯异构体或乙苯形成取代的α-环糊精的包合络合物其中包括二甲苯异构体和/或乙苯，从而从中提取二甲苯异构体和/或乙苯以分离或分离。可用于分离或分离二甲苯异构体和/或乙苯的包合配合剂是具有至少一个羟基的氢原子被至少一个取代的α-环糊精形式的α-环糊精选自葡糖基，麦芽糖基，麦芽低聚糖残基，羟乙基，羟丙基，甲基，磺酸基，烷基磺酸基和羧基烷基的成员。

5. 发明授权

US6130458A Power IC having SOI structure 失效
标题翻译：具有SOI结构的功率IC
公开(公告)号：US6130458A
公开(公告)日：2000-10-10
申请号：US828028
申请日：1997-03-27
申请人： Yosuke Takagi , Koichi Endo
发明人： Yosuke Takagi , Koichi Endo
IPC分类号： H01L21/762 , H01L21/74 , H01L21/761 , H01L27/12 , H01L29/73 , H01L29/739 , H01L29/78 , H01L29/786 , H01L27/01 , H01L29/76
CPC分类号： H01L29/7824 , H01L21/743 , H01L27/1203 , H01L29/7317 , H01L29/7394
摘要： The present invention relates in general to power ICs, etc. having the SOI structure, and more specifically to the structure in which an SOI substrate comprises a base substrate, an SOI oxide film formed on the base substrate, and active layers formed on the SOI oxide film, and also integrates on itself power devices and the corresponding control elements monolithically. Between this base substrate and this SOI oxide film is formed heavily-doped semiconductor regions having a conductivity type opposite to that of this base substrate. Hence, the junction capacitance between the base substrate and the heavily-doped semiconductor regions decreases an actual capacitance between the base substrate and the active layer so that to inhibit or prevent inversion layers from being formed at the bottom of the active layers.
摘要翻译：本发明一般涉及具有SOI结构的功率IC等，更具体地说涉及SOI衬底包括基底衬底，在基底衬底上形成的SOI氧化膜，以及在SOI上形成的有源层的结构氧化膜，并且还将其自身的功率器件和相应的控制元件整体集成。在该基底衬底和该SOI氧化膜之间形成具有与该基底衬底相反的导电类型的重掺杂半导体区域。因此，基底衬底和重掺杂半导体区域之间的结电容降低了基底衬底和有源层之间的实际电容，从而抑制或防止在活性层底部形成反型层。

6. 发明授权

US5200517A Inclusion-complexing agent for use in isolation of xylene isomer(s) and/or ethylbenzene 失效
标题翻译：用于分离二甲苯异构体和/或乙苯的包合络合剂
公开(公告)号：US5200517A
公开(公告)日：1993-04-06
申请号：US683409
申请日：1991-04-10
申请人： Isamu Uemasu , Yosuke Takagi , Makoto Chiwa
发明人： Isamu Uemasu , Yosuke Takagi , Makoto Chiwa
IPC分类号： C07C7/152
CPC分类号： C07C7/152
摘要： A mixture of xylene isomers or a mixture of a xylene isomer(s) and ethylbenzene is brought into contact with at least one specific substituted .alpha.-cyclodextrin to form an inclusion complex(es) of the substituted .alpha.-cyclodextrin with a xylene isomer or ethylbenzene included therein, from which the xylene isomer(s) and/or ethylbenzene is then extracted to isolate, or separate, the same. Inclusion-complexing agents usable in isolation, or separation, of the xylene isomer(s) and/or ethylbenzene are substituted .alpha.-cyclodextrin in the form of .alpha.-cyclodextrin having the hydrogen atom of at least one hydroxyl group thereof substituted with at least one member selected from the group consisting of a glucosyl group, a maltosyl group, maltooligosaccharide residues, a hydroxyethyl group, a hydroxypropyl group, a methyl group, a sulfonic group, alkylenesulfonic groups, and carboxyalkyl groups.
摘要翻译：二甲苯异构体或二甲苯异构体和乙苯的混合物的混合物与至少一种特定的取代的α-环糊精接触以与二甲苯异构体或乙苯形成取代的α-环糊精的包合络合物其中包括二甲苯异构体和/或乙苯，从而从中提取二甲苯异构体和/或乙苯以分离或分离。用于分离或分离二甲苯异构体和/或乙苯的包合配合剂是具有至少一个羟基的氢原子被至少一个羟基取代的α-环糊精形式的取代的α-环糊精选自葡糖基，麦芽糖基，麦芽低聚糖残基，羟乙基，羟丙基，甲基，磺酸基，烷基磺酸基和羧基烷基的成员。

7. 再颁专利

USRE34025E Semiconductor device with isolation between MOSFET and control circuit 失效
公开(公告)号：USRE34025E
公开(公告)日：1992-08-11
申请号：US620536
申请日：1990-11-28
申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
发明人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
IPC分类号： H01L21/761 , H01L21/8249 , H01L27/06
CPC分类号： H01L21/8249 , H01L21/761 , H01L27/0623
摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

8. 发明授权

US4879584A Semiconductor device with isolation between MOSFET and control circuit 失效
标题翻译： MOSFET与控制电路之间隔离的半导体器件
公开(公告)号：US4879584A
公开(公告)日：1989-11-07
申请号：US154275
申请日：1988-02-10
申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
发明人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
IPC分类号： H01L21/76 , H01L21/8238 , H01L21/8249 , H01L27/06 , H01L27/088 , H01L27/092 , H01L29/78
CPC分类号： H01L21/8249 , H01L27/0623 , H01L27/088
摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

9. 发明申请

US20120050418A1 LIQUID EJECTION HEAD AND LIQUID EJECTION APPARATUS 有权
标题翻译：液体喷射头和液体喷射装置
公开(公告)号：US20120050418A1
公开(公告)日：2012-03-01
申请号：US13215551
申请日：2011-08-23
申请人： Naoko Tsujiuchi , Kiyomitsu Kudo , Tomotsugu Kuroda , Yosuke Takagi
发明人： Naoko Tsujiuchi , Kiyomitsu Kudo , Tomotsugu Kuroda , Yosuke Takagi
IPC分类号： B41J2/175
CPC分类号： B41J2/17509 , B41J2/17513 , B41J2/1752 , B41J29/02
摘要： A liquid ejection apparatus includes a liquid supply member having a plurality of liquid supply passages, a connecting surface having a plurality of connecting portions connected to the liquid supply passages, a first positioning portion configured to determine relative positions between the liquid supply passages and the connecting portions in one direction along the connecting surface, and a second positioning portion configured to determine relative positions between the liquid supply passages and the connecting portions in the one direction and an other direction perpendicular to the one direction. A first distance between centers of gravity of the first positioning portion and the connecting portion farthest from the first positioning portion is longer than a second distance between centers of gravity of the second positioning portion and the connecting portion farthest from the second positioning portion.
摘要翻译：液体喷射装置包括具有多个液体供给通道的液体供给部件，具有与液体供给通道连接的多个连接部的连接面，配置为确定液体供给通路与连接部之间的相对位置的第一定位部以及第二定位部，被配置为确定在一个方向和垂直于该一个方向的另一方向上的液体供给通道和连接部之间的相对位置。第一定位部分的重心和距离第一定位部分最远的连接部分之间的第一距离比第二定位部分的重心和距离第二定位部分最远的连接部分之间的第二距离长。

10. 发明授权

US5493148A Semiconductor device whose output characteristic can be adjusted by functional trimming 失效
标题翻译：输出特性可以通过功能修整来调整的半导体器件
公开(公告)号：US5493148A
公开(公告)日：1996-02-20
申请号：US956466
申请日：1992-10-02
申请人： Yu Ohata , Koichi Kitahara , Yosuke Takagi
发明人： Yu Ohata , Koichi Kitahara , Yosuke Takagi
IPC分类号： H01L27/04 , H01C17/22 , H01L21/82 , H01L21/822 , H01L23/525 , H01L29/00
CPC分类号： H01C17/22 , H01L23/5256 , H01L2924/0002
摘要： A semiconductor device includes a resistor network having a plurality of trimming polysilicon resistors. The polysilicon resistors have the same width and different lengths and can be selectively fused according to the value of current which is caused to flow therein. The resultant resistance of the resistor network is changed by selectively fusing the polysilicon resistors. The output characteristic of the semiconductor device can be adjusted by changing the resultant resistance.
摘要翻译：半导体器件包括具有多个微调多晶硅电阻器的电阻网络。多晶硅电阻器具有相同的宽度和不同的长度，并且可以根据流过其中的电流的值选择性地熔化。通过选择性地熔化多晶硅电阻来改变电阻网络的合成电阻。可以通过改变所得到的电阻来调节半导体器件的输出特性。

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