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    • 3. 发明授权
    • Switching circuit having a switching semiconductor device and control method thereof
    • 具有开关半导体器件的开关电路及其控制方法
    • US06353309B1
    • 2002-03-05
    • US09608023
    • 2000-06-29
    • Mitsuaki OotaniYoshiyuki WasadaNobuyuki YamazakiYasushi InoueTakeshi NakayamaJunichi ShimamuraYuji EbinumaTakayuki Tsukamoto
    • Mitsuaki OotaniYoshiyuki WasadaNobuyuki YamazakiYasushi InoueTakeshi NakayamaJunichi ShimamuraYuji EbinumaTakayuki Tsukamoto
    • G05F140
    • G05F1/575H03K17/122
    • The present invention provides a switching circuit and an electronic switching component having a switching semiconductor device to perform switching between a conducting state and a non-conducting state of a conducting path to thereby reduce the power loss thereof and a control method thereof. In the present invention, at least two FETs 11 and 12, wherein the FET 11 has a faster switching time and the FET 12 has a lower ON resistance. Active terminals (drains and sources) of the FETs 11 and 12 are connected to each other in parallel. By employing these FETs 11 and 12, the conversion between an ON-state and an OFF-state of the conducting path is performed. In converting from the non-conducting state to the conducting state, the control circuit 13 first turns on the FET 11 and then turns on the FET 12 when if a voltage between terminals of the FET 11 reaches around a saturation value thereof. In converting from the conducting state to the non-conducting state, the control circuit 13 first turns off the FET 12 and then turns off the FET 11 when if a voltage between terminals of the FET 11 reaches around a saturation value thereof.
    • 本发明提供一种开关电路和具有开关半导体器件的电子开关元件,以进行导通路径的导通状态和非导通状态之间的切换,从而降低其功率损耗及其控制方法。 在本发明中,至少两个FET 11和12,其中FET 11具有更快的开关时间,并且FET 12具有较低的导通电阻。 FET 11和12的有源端子(漏极和源极)并联连接。 通过采用这些FET11,12,进行导通路径的导通状态和截止状态之间的转换。 在从非导通状态转换为导通状态时,如果FET 11的端子之间的电压达到其饱和值,则控制电路13首先接通FET 11,然后导通FET 12。 在从导通状态转换为非导通状态时,如果FET 11的端子之间的电压达到其饱和值,则控制电路13首先关断FET 12,然后关断FET 11。