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1. 发明授权

US5030596A Sintered article of diamond and method for production thereof 失效
标题翻译：金刚石烧结制品及其制造方法
公开(公告)号：US5030596A
公开(公告)日：1991-07-09
申请号：US444718
申请日：1989-12-01
申请人： Shoichi Kume , Haruo Yoshida , Kazutaka Suzuki , Yoshio Tasaki , Shiro Ikuta , Masamitu Ishikawa , Michihide Machida
发明人： Shoichi Kume , Haruo Yoshida , Kazutaka Suzuki , Yoshio Tasaki , Shiro Ikuta , Masamitu Ishikawa , Michihide Machida
IPC分类号： C04B35/52 , B01J3/06 , C22C1/05 , C22C21/10 , C22C26/00
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： A sintered article of diamond is obtained by coating the surface of diamond particles with 30 to 0.1% by volume, based on the total volume of the diamond particles and aids, of at least one member selected from the group consisting of the transition metals of Groups 4a, 5a, and 6a in the Periodic Table of Elements and boron and silicon, and sintering the coated diamond particles under conditions of high pressure and high temperature, which sintered article consists of 70 to 99.8% by volume of diamond and 30 to 0.2% by volume of the carbide of the coating substance. A method for the production of the sintered article of diamond is also disclosed.

2. 发明授权

US4122990A Portable frictional welding device 失效
标题翻译：便携式摩擦焊接装置
公开(公告)号：US4122990A
公开(公告)日：1978-10-31
申请号：US748880
申请日：1976-12-09
申请人： Yoshio Tasaki , Noboru Nakayama , Hiroshi Kajihara
发明人： Yoshio Tasaki , Noboru Nakayama , Hiroshi Kajihara
IPC分类号： B23K20/12 , B23K19/02
CPC分类号： B23K20/1285 , Y10T408/554
摘要： Disclosed herein is a portable frictional welding device whereby union of a metallic part with a given structure is accomplished by fastening said metallic part to the rotary shaft of the device supported slidably in the axial direction thereof, operating the rotary shaft so as to rotate the metallic part and at the same time pressing it against the structure and, when the point therebetween has assumed a state of fusion, stopping the rotation of the rotary shaft and simultaneously increasing the thrust being applied to said structure.
摘要翻译：这里公开了一种便携式摩擦焊接装置，其中具有给定结构的金属部件的结合是通过将所述金属部件紧固到沿其轴向可滑动地支撑的装置的旋转轴来实现的，操作旋转轴以使金属并且同时将其压靠在结构上，并且当它们之间的点处于融合状态时，停止旋转轴的旋转并同时增加施加到所述结构的推力。

3. 发明授权

US08907528B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08907528B2
公开(公告)日：2014-12-09
申请号：US13286198
申请日：2011-10-31
申请人： Yoshio Tasaki
发明人： Yoshio Tasaki
IPC分类号： H01H47/00 , H02M1/14
CPC分类号： H03K3/013 , H01L2924/0002 , H02M1/14 , H02M3/07 , Y10T307/50 , Y10T307/747 , H01L2924/00
摘要： There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.
摘要翻译：提供了一种半导体器件，其中抑制了电源噪声的影响，并且减少了引脚数量和半导体器件的面积。用于第一内部电路的电源线和用于第二内部电路的电源线耦合到公共引脚端子。用于第一内部电路的接地线和用于第二内部电路的接地线耦合到另一个公共引脚端子。在第一内部电路的操作期间，用于第一内部电路的电源线上产生的电源噪声被P沟道MOS晶体管和电容器吸收。在地线上产生的电源噪声被N沟道MOS晶体管和电容器吸收。

4. 发明授权

US4902652A Method for production of a sintered article of diamond 失效
标题翻译：金刚石烧结制品的制造方法
公开(公告)号：US4902652A
公开(公告)日：1990-02-20
申请号：US216307
申请日：1988-07-08
申请人： Shoichi Kume , Haruo Yoshida , Kazutaka Suzuki , Yoshio Tasaki , Shiro Ikuta , Masamitu Ishikawa , Michihide Machida
发明人： Shoichi Kume , Haruo Yoshida , Kazutaka Suzuki , Yoshio Tasaki , Shiro Ikuta , Masamitu Ishikawa , Michihide Machida
IPC分类号： C04B35/52 , B01J3/06 , C22C1/05 , C22C21/10 , C22C26/00
CPC分类号： B01J3/062 , B01J2203/062 , B01J2203/0655 , B01J2203/0685
摘要： A sintered article of diamond is obtained by coating the surface of diamond particles with 30 to 0.1% by volume, based on the total volume of the diamond particles and aids, of at least one member selected from the group consisting of the transition metals of Groups 4a, 5a, and 6a in the Periodic Table of Elements and boron and silicon, and sintering the coated diamond particles under conditions of high pressure and high temperature, which sintered article consists of 70 to 99.8% by volume of diamond and 30 to 0.2% by volume of the carbide of the coating substance. A method for the production of the sintered article of diamond is also disclosed.
摘要翻译：通过将金刚石颗粒的表面以基于金刚石颗粒和助剂的总体积的30至0.1体积％的表面的至少一种选自组中的过渡金属的组合来获得，元素周期表中的4a，5a和6a以及硼和硅，并且在高压和高温条件下烧结涂覆的金刚石颗粒，该烧结制品由70至99.8体积％的金刚石和30至0.2％体积的涂层物质的碳化物。还公开了用于生产金刚石烧结制品的方法。

5. 发明申请

US20120104854A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120104854A1
公开(公告)日：2012-05-03
申请号：US13286198
申请日：2011-10-31
申请人： Yoshio TASAKI
发明人： Yoshio TASAKI
IPC分类号： H02J4/00
CPC分类号： H03K3/013 , H01L2924/0002 , H02M1/14 , H02M3/07 , Y10T307/50 , Y10T307/747 , H01L2924/00
摘要： There is provided a semiconductor device in which an influence of a power source noise is suppressed and the number of pins and the area of the semiconductor device are reduced. A power source line for a first internal circuit and a power source line for a second internal circuit are coupled to a common pin terminal. A ground line for the first internal circuit and a ground line for the second internal circuit are coupled to another common pin terminal. A power source noise generated on the power source line for the first internal circuit during an operation of the first internal circuit is absorbed by a P-channel MOS transistor and a capacitor. A power source noise generated on the ground line is absorbed by an N-channel MOS transistor and the capacitor.
摘要翻译：提供了一种半导体器件，其中抑制了电源噪声的影响，并且减少了引脚数量和半导体器件的面积。用于第一内部电路的电源线和用于第二内部电路的电源线耦合到公共引脚端子。用于第一内部电路的接地线和用于第二内部电路的接地线耦合到另一个公共引脚端子。在第一内部电路的操作期间，用于第一内部电路的电源线上产生的电源噪声被P沟道MOS晶体管和电容器吸收。在地线上产生的电源噪声被N沟道MOS晶体管和电容器吸收。

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