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    • 1. 发明授权
    • Pattern recognition method
    • 模式识别方法
    • US4866782A
    • 1989-09-12
    • US250863
    • 1988-09-29
    • Kazuo SugieYoshimasa SainenYuji KimuraTadashi Nishiyama
    • Kazuo SugieYoshimasa SainenYuji KimuraTadashi Nishiyama
    • G01B11/02
    • G01B11/024
    • According to this invention, light is radiated on a pattern to be measured while being scanned, and light reflected by the pattern is received so as to form a light intensity profile curve based on the reflection light corresponding to the pattern width of the pattern to be measured. Then, coefficients of optimal values are calculated by the method of least squares using three sets or more of pattern width values and light intensity values obtained from the light intensity profile curve. A pattern width value (X1) of the pattern to be measured is calculated using equation (II) below having these optimal values as coefficients. A very small line width of a resist film can be easily and accurately measured as a bottom value using an optical apparatus without being influenced by light interference at an edge portion of the pattern to be measured.y1=d/{1+a1.multidot.exp(-b1X1)} (II)y1=a1.sub.1 X.sup.n-2 +a1.sub.2 X.sup.n-3 . . . c1 (IV)
    • 根据本发明,在扫描时将光照射在要测量的图案上,并且接收由图案反射的光,以便基于与图案的图案宽度对应的反射光形成光强度曲线 测量。 然后,通过使用三组以上的图案宽度值和从光强度曲线图获得的光强度值,通过最小二乘法来计算最佳值的系数。 使用以下这些最优值作为系数的等式(II)计算要测量的图案的图案宽度值(X1)。 抗蚀剂膜的线宽可以容易且准确地测量,使用光学装置作为底值,而不受被测图案的边缘部分的光干涉的影响。 y1 = d / {1 + a1xexp(-b1X1)}(II)y1 = a11Xn-2 + a12Xn-3。 。 。 c1(IV)